激光烧蚀制备纳米Si晶粒的激光能量密度阈值

在10 Pa的Ar环境气氛下,采用脉冲激光烧蚀方法在玻璃或单晶Si(111)衬底上制备了纳米Si晶薄膜. 为了确定能够形成纳米Si晶粒的激光能量密度阈值,在0.40～1.05 J/cm2内实验研究了激光能量密度对纳米Si晶粒形成的影响. 扫描电子显微镜(SEM)测量证实,随着激光能量密度的减小,所形成的纳米Si晶粒数目逐渐减少. 当激光能量密度低于0.43 J/cm2时,衬底表面不再有纳米Si晶粒形成. 从激光烧蚀动力学角度出发,对实验结果进行了定性分析.     

外加电场下脉冲激光烧蚀制备纳米硅晶粒成核生长

采用脉冲激光烧蚀技术,在引入垂直于烧蚀羽辉轴线外加直流电场的前后,分别在1,3,5Pa的室温氩气环境下沉积制备了一系列纳米硅晶薄膜,其中衬底与羽辉轴线平行.扫描电子显微镜(SEM)的检测结果表明,在同一直流电压下制备的纳米Si晶粒平均尺寸和面密度均随气体压强的增加而增大.保持气压不变,引入电场后所制备的纳米Si晶粒平均尺寸相对于无外加电场时增大,而面密度减小.结合纳米晶粒气相成核生长动力学,对实验结果进行了定性分析.     

激光退火能量对非晶Si薄膜晶化的影响

采用XeCl准分子脉冲激光,在真空环境中烧蚀单晶Si靶,在Si(111)和石英衬底上沉积生成非晶Si薄膜.在同样的环境下,用激光对非晶Si薄膜进行退火,通过扫描电子显微镜和拉曼光谱仪对退火后的样品进行分析比较.结果表明,激光能量对非晶薄膜的晶化和纳米晶粒尺寸有重要影响.     

激光晶化制备硅量子点/碳化硅多层膜p-i-n结构的光伏特性探索

对不同能量密度激光晶化的硅量子点/碳化硅周期性多层膜的结构与光学性质进行了研究.结果表明,激光晶化技术可以获得晶化的硅量子点并且保持良好的周期性层状结构;随着激光能量密度的增大,多层膜中的硅量子点的晶化率和晶粒尺寸都随之增大,光吸收系数增强,吸收边红移,光学带隙减小.进而初步尝试了对在镀有氧化铟锡(ITO)透明导电电极的玻璃衬底上制备的基于硅量子点/碳化硅周期性多层膜的全硅量子点太阳能电池光伏性能的探索,提出利用KrF准分子脉冲激光晶化技术代替传统的高温退火技术来获得全硅量子点电池的方法,以避免长时间的高温过程对玻璃衬底和ITO膜的破坏,获得了有效面积为0.8cm2的电池.研究发现激光晶化技术制备的全硅量子点电池具有良好的整流特性,并且随着激光能量密度的增大,电池的外量子效率先增大后减小,170mJ·cm~(-2)是最佳的激光晶化能量密度,基于此条件制备的全硅量子点电池初步获得了0.16mA·cm-2的短路电流密度.     

溅射Ga2O3反应自组装和脉冲激光沉积(PLD)法制备GaN薄膜

用溅射Ga2O3反应自组装和脉冲激光沉积（PLD）法分别在硅和蓝宝石衬底上制备CaN薄膜,用X射线衍射图谱（XRD）和原子力显微镜（AFM）对GaN薄膜的结构和形貌进行分析,结果表明,采用两种方法在两种衬底上均可制备出结晶较好的CaN薄膜,但硅衬底上制备的GaN薄膜的晶粒明显大于在蓝宝石衬底上制备的GaN薄膜的晶粒,进一步表明硅基溅射Ga2O3反应自组装GaN薄膜晶化程度较高.     

电场对脉冲激光沉积纳米Si晶粒尺寸和面密度分布的影响

为了研究外加电场对脉冲激光沉积纳米Si晶粒的影响,采用XeCl准分子激光器,烧蚀高阻抗单晶Si靶,在10 Pa氩气环境下,调整外加电压的强度,沉积制备了一系列Si薄膜.X线衍射(XRD)谱仪、拉曼(Raman)谱、扫描电子显微镜(SEM)图像均显示纳米Si晶粒已经形成,随着靶衬间距的增加,所形成的纳米Si晶粒的平均尺寸...     

硅烷对纳米硅薄膜微结构和光学性能的影响

通过改变反应气体中硅烷体积分数,采用直流偏压辅助等离子体化学气相沉积法在玻璃衬底上沉积本征氢化纳米硅薄膜.使用拉曼光谱仪、原子力学显微镜和紫外可见光透射仪对薄膜进行测试,研究不同硅烷体积分数对薄膜微结构和光学性能的影响.结果表明:当硅烷体积分数增加,晶粒尺寸增加,而晶态含量却随之下降.晶态含量的降低,使拉曼光谱中谱峰的强度降低,峰位发生蓝移,薄膜有序性随之降低;而且薄膜的光学禁带宽度随硅烷体积分数的增加而增加.当硅烷体积分数为1.3%时,沉积本征氢化纳米硅薄膜,薄膜中晶粒分布均匀,其生长存在取向性.此时晶态含量约为50%,晶粒尺寸约为2.6 nm;薄膜具有较大的光学禁带宽度,为1.702 eV,以及较高的电导率.     

激光烧结纳米Al_2O_3微观结构研究

利用电子扫描电镜(SEM)和X射线衍射仪(XRD)对激光烧结纳米Al2O3粉末块体材料进行了试验分析与研究.结果表明,纳米晶粒的微观结构在烧结过程中不断地发生变化,但激光烧结基本可以抑制纳米晶粒的生长,得到具有纳米尺度的烧结材料.     

散射电场对激光烧蚀制备纳米Si晶粒分布和尺寸的影响

在10 Pa的氩气环境下采用了脉冲激光烧蚀技术(PLA),通过引入散射电场沉积制备了纳米Si晶粒薄膜.X线衍射谱(XRD)和Raman谱测量均证实了在薄膜中已经形成了纳米Si晶粒;利用扫描电子显微镜(SEM)对所制备的薄膜进行了形貌表征.结果表明,纳米Si晶粒的分布以及其平均尺寸均相对于轴向呈对称分布,加入散射电场后纳米Si晶粒的分布范围增大,其平均尺寸最大值所对应与靶的轴向夹角变大.利用MATLAB对烧蚀颗粒在散射电场的运动过程进行数值模拟,得到与实验结果一致的规律.     

铜/铁钝化多孔硅纳米复合薄膜的制备与形貌研究

由水热腐蚀技术制得的铁钝化多孔硅作为基底,采用浸渍镀膜技术成功制备了铁钝化多孔硅/铜纳米复合薄膜.利用扫描电镜(SEM)、XRD等分析手段对比研究了铁钝化多孔硅在沉积前与沉积后的结构变化特点以及沉积时间对所沉积的铜薄膜的结构的影响.结果表明,在浸渍一定时间后,铜/铁钝化多孔硅纳米复合薄膜继承了新鲜制备的铁钝化多孔硅的结构特点;同时,在溶液浓度保持不变的情况下,随着反应时间的的延长,铜的沉积量逐渐增加,铜纳米颗粒的平均晶粒尺寸逐渐长大.     

钢基底上预镀中间层沉积金刚石膜

利用表面预镀中间层在４５号钢上化学气相沉积（ＣＶＤ）得到了金刚石膜。钢基底表面金刚石涂层具有许多潜在应用价值，但直接在钢上沉积生长金刚石面临长的形核期，铁原子的触媒作用和热膨胀不匹配等严重问题。文中采用钢基底表面预镀中间层的方法，阻止碳向基底中扩散，增强膜基结合和抑制ＳＰ２杂化碳的沉积。分别研究了直接在钢基底上、表面预镀铜膜和表面预镀硅膜钢基底上热丝法沉积金刚石膜的工艺特点。通过ＳＥＭ、Ｒａｍａｎ谱和划痕法检验表明，钢基底表面预镀硅膜作为中间层，是一种在钢上沉积金刚石膜的有效方法。     

Different effects of substrates on the morphologies of single-walled carbon nanotubes

In this work, different effects of substrates on the morphologies of single-walled carbon nanotubes （SWNTs） are studied. SWNTs were produced by floating catalytic chemical vapor deposition using CH4 as carbon source gas and Ar as carrier gas. Then the SWNTs were deposited on lithography-patterned different substrates. The as-grown SWNTs at the boundaries between SiO2 and metal were characterized by scanning electron microscopy, atomic force spectroscopy and Raman spectroscopy. It is found that SWNTs deposited on low-conductivity substrates trend to have curved morphologies and some of them form rings, while SWNTs deposited on metal sub- strates remain straight and orientated. The mechanism of these effects was also discussed, which is closely related to the thermal conductivities and the principle of energy dissipation.     

含氢类金刚石碳膜的拉曼光谱洛伦兹分解

利用射频等离子体增强化学气相沉积(rf PECVD)工艺在不锈钢基底上制备a-C:H膜,利用激光Raman光谱表征所沉积碳膜的微观结构,特别是通过对拉曼谱图进行洛伦兹分解来评价所沉积碳膜的sp3含量,分析了沉积电压和过渡层对a-C:H膜生长过程及膜中sp3含量的影响.结果表明,利用拉曼光谱的洛伦兹分解能够有效分析a-C:H的结构特性,碳膜沉积过程中沉积电压和过渡层对a-C:H膜的生长均具有重要影响.在本实验条件下,以Ti/TiN/TiC为过渡层沉积电压为2500 V时所制备的a-C:H膜中的sp3含量最高.     

反应等离子体制备碳锥及其表征

利用等离子体增强热丝化学气相沉积系统,用CH4、H2和NH3为反应气体,分别在沉积有钛膜和碳膜的Si片衬底上制备了锥形碳结构,采用场发射扫描电子显微镜(FESEM)、X射线能谱仪(EDX)和显微Raman光谱仪对其形貌和结构进行了表征.SEM结果表明在沉积有碳膜的Si片衬底上易形成碳锥,EDX谱和Raman谱进一步表明形成的碳锥为碳氮结构,由sp3 C-N、sp2 C和sp2 C=N键形成.根据溅射机制和扩散机制,分析了碳锥的形成.同时,还对碳锥Raman谱的荧光背景进行了分析,结果表明由于氮的掺杂,使得碳锥由非极性的碳材料变成为极性碳材料.     

nc-Si:H薄膜的微结构特征与光学特性

利用射频等离子体增强型化学气相沉积(RF-PECVD)工艺,以SiH4和H2作为反应气体源,在玻璃和石英衬底上制备了氢化纳米晶硅(nc-Si:H)薄膜.采用Raman散射谱、原子力显微镜(AFM)、透射光谱方法对在不同衬底温度与不同H2稀释比条件下沉积生长薄膜的微结构和光学特性进行了实验研究.结果表明,nc-Si:H薄膜的晶粒尺寸为2.6～7.0nm和晶化率为45%～48%.在一定反应压强、衬底温度和射频功率下,随着H2稀释比的增加,薄膜的沉积速率降低,但晶化率和晶粒尺寸均有所增加,相应光学吸收系数增大.而在一定反应压强、射频功率和H2稀释比下,随着衬底温度的增加,沉积速率增加,薄膜晶化率提高.     

碳基片上沉积的金刚石涂层多孔电极的特性(英文)

采用化学气相沉积法(CVD)在多孔活性碳基体上制备掺硼金刚石涂层多孔电极。用扫描电子显微镜(SEM)法表征了金刚石膜的表面微观结构,采用循环伏安法和交流阻抗法研究了电极的电化学性质。结果表明,金刚石表面形态为球形,金刚石膜电极具有很宽的电势窗口,在酸性、中性和碱性3种介质中分别为4.4V、4.0V和3.0V。在铁氰化钾电解液中,金刚石膜电极表面在反应过程中始终保持良好的活性,在表面进行的电化学反应具有良好的准可逆性。     

金刚石聚晶薄膜制备及其电子场的发射性能

微波等离子体化学气相沉积是制备微/纳米结构的方法之一,使用该方法在陶瓷衬底上制备微米金刚石聚晶材料薄膜。利用扫描电子显微镜表征了材料的表面形貌,单元尺寸一致,分布均匀。使用X射线衍射和拉曼光谱分析了薄膜的结构,测试了薄膜材料的电子场发射性能。数据表明:制备的薄膜材料开启电场为1.25V/μm,在2.55V/μm的电场下,其电子场发射电流密度达到6.3mA/cm2。     

Effects of submicron diamonds on the growth of copper in Cu-diamond co-deposition

Submicron diamonds were co-deposited on aluminum substrates with copper from the acid copper sulfate electrolyte by electrolyte-suspension co-deposition. After submicron diamonds were added to the electrolyte, the shape of copper grains transformed from oval or round to polyhedron, the growth mode of copper grains transformed from columnar growth to gradual change in size, and the preferred orientation of copper grains transformed from (220) to (200). Analyzing the variation of cathodic overpotential, it was found that the cathodic overpotential tended to remain unchanged when copper plane (220) grew in the process of electrodepositing pure copper, while it tended to decrease with time when copper plane (200) grew in the process of co-deposition. It was inferred that copper plane (200) was propitious to the deposition of submicron diamonds.     

Growth behavior of polycrystalline silicon thin films deposited by RTCVD on quartz substrates

Polycrystalline silicon (poly-Si) thin films were prepared on quartz substrates by rapid thermal chemical vapor deposition (RTCVD) system, and their structures were studied by XRD, SEM and TEM, respectively. XRD spectra exhibit a single strong (220) diffraction peak, which indicates that the poly-Si films are preferentially <110> oriented. Plane-view SEM images show that the surface of the poly-Si films is composed of large numbers of polygonal pyramid grains with different sizes, and cross-section SEM images further indicate that they are columnar grains with growth direction perpendicular to substrate surface. TEM observation results demonstrate that there are a lot of twin crystals including one-order, two-order and high-order (≥3) twin crystals in the poly-Si films. The above experimental results can not be elucidated by the conventional opinion on growth behavior of poly-Si films prepared by atmosphere pressure chemical vapor deposition (APCVD), but can be explained by the Ino’s multiply twinned particles (MTPs) model found in the face centered cubic metal films. According to the above experimental results and Ino’s model, we tend to think that nucleation and grain growth of poly-Si films deposited by RTCVD on quartz substrates are based on the formation of MTPs, and then these MTPs form the continuous films in an island growth mode.     

Deposition of crackless freestanding diamond films on Mo substrates with Zr interlayer

The Mo substrate with Zr interlayer, namely composite substrate, was employed to solve the problem of crack formation in the freestanding diamond film deposition. Freestanding diamond films deposited on the composite substrates by the direct current arc plasma jet chemical vapor deposition (CVD) method were investigated with scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Raman spectroscopy. In addition, the stress distribution during the large area freestanding diamond film deposition on the composite substrate was analyzed based on the finite element model ANSYS. The results reveal that Zr interlayer can be easily destroyed during the post-deposition cooling process, which is helpful for stress release and crack avoiding in diamond films.