离子轰击碳膜诱导碳纳米尖端的形成和生长

用CH4、NH3和H2为反应气体,利用等离子体增强热丝化学气相沉积系统在沉积有碳膜的Si上制备了碳纳米尖端.用扫描电子显微镜、原子力显微镜和Raman光谱表征了碳膜的结构,以及用扫描电子显微镜和X射线光电子谱表征了碳纳米尖端的结构,结果表明碳膜是凸凹不平的非晶碳膜,碳纳米尖端是由sp2结构的碳组成.根据有关离子的溅射和沉积机制,分析了离子轰击碳膜诱导碳纳米尖端的形成和生长.     

衬底温度对磁溅射生长氮化碳薄膜的影响

通过非平衡磁溅射方法和改变衬底温度，在单晶Si（001）衬底上制备氯化碳薄膜材料．实验结果表明，氮化碳薄膜的沉积率、氮原子质量分数皆与衬底温度有关，薄膜中的氮原子与处于sp2和sp3杂化状态的碳原子相结合．随着衬底温度的改变，氮原子与处于这两种状态的碳原子结合的比例也发生改变．     

磁控溅射类石墨镀层结构的Raman光谱和XPS分析

利用非平衡磁控溅射离子镀技术在单晶硅片上沉积了类石墨碳镀层,采用X射线衍射(XRD)、激光Raman光谱和X 射线光电子能谱 (XPS)等分析方法对镀层的微观结构进行了研究.结果表明:不同成份类石墨碳镀层的Raman光谱与宽化的多晶石墨Raman光谱相似,类石墨碳镀层是以sp2键结构为主,且含有多种纳米团簇颗粒的非晶镀层,sp3键含量在12～15%范围;根据高斯解谱计算,镀层中碳团簇线度为1.2 nm以下,并随铬含量增高而减小;镀层主要由单质碳、铬及其铬氧化物组成,并随铬含量增高,逐步有碳铬化合物形成.     

聚脂膜衬底上的类金刚石薄膜

X光电子能谱和硬度分析测试表明:利用MEVVA离子注入机在聚脂膜(PET)表面注入或沉积C,可形成类金刚石(DLC)薄膜.根据C1s XPS谱可直接计算出DLC中sp3键所占比例.沉积法生长的DLC中sp3键所占比例明显高于注入法.与衬底PET相比,表面薄膜硬度提高了1个量级,大大改善了PET的性质.对DLC膜中的碳氧化合物污染进行了讨论.     

N离子注入金刚石膜方法合成的CN_x膜的成键结构

使用 N离子 (能量分别为 1 0 ke V,60 ke V)注入金刚石膜方法合成 CNx 膜 ,用 Raman光谱和 XPS光谱研究注入前后金刚石膜的成键结构 .结果表明 ,金刚石膜经 1 0 ke V N离子注入后 ,在 Raman光谱中出现一个较强的金刚石峰 (1 332 cm- 1)和一个弱的石墨峰 (G带 ,～ 1 550 cm- 1) .而 XPS N1s资料显示两个主峰分别位于～ 398.5e V和～ 40 0 .0 e V.金刚石膜经 60 ke V N离子注入后 ,N1s XPS光谱中的主峰位于～ 40 0 .0 e V;相应地 ,Raman光谱中的石墨峰变得较强 .通过比较 ,对注入样品的 XPS谱中 N1s的成键结构作如下归属 :～ 40 0 .0e V属于 sp2 C— N键 ;～ 398.5e V则属于 sp3C—N键 .     

离子轰击辅助电子束蒸发制备含有纳米石墨结构的非晶碳膜

采用离子轰击辅助电子束蒸发技术制备了含有纳米石墨结构的碳膜。利用XRD、Ralnan和AFM等方法分析了碳膜的厚度、结构、相成分和形貌。结果表明制备的碳膜是一种具有纳米石墨结构的非晶碳膜。随着离子轰击能量的增大,碳膜的厚度随之减小,纳米石墨结构sp2团簇的尺寸变大,碳膜表面粗糙度增大,并找到了最佳的离子轰击能量。通过对Raman光谱分析发现,在最佳离子轰击能量下形成的纳米石墨结构sp2团簇尺寸大小约为2nm。     

Si（111）表面离子束辅助沉积对类金刚石薄膜结构影响的计算机模拟

本文选C2分子和Ar离子作为沉积源和辅助沉积粒子,采用分子动力学（MD）方法在Si（111）面上模拟研究了离子束辅助沉积（IBAD）类金刚石（DLC）膜的物理过程.重点讨论了C2分子和Ar离子的入射能量及到达比（Ar/C）对平均密度和sp^3键含量的影响,并与Si（001）-（2×1）表面生长类金刚石膜的结果进行比较.结果表明,到达比和入射能的改变,对薄膜结构的影响不同;Si（111）面上生长类金刚石膜,薄膜在衬底的附着力更强.     

含氢类金刚石碳膜的拉曼光谱洛伦兹分解

利用射频等离子体增强化学气相沉积(rf PECVD)工艺在不锈钢基底上制备a-C:H膜,利用激光Raman光谱表征所沉积碳膜的微观结构,特别是通过对拉曼谱图进行洛伦兹分解来评价所沉积碳膜的sp3含量,分析了沉积电压和过渡层对a-C:H膜生长过程及膜中sp3含量的影响.结果表明,利用拉曼光谱的洛伦兹分解能够有效分析a-C:H的结构特性,碳膜沉积过程中沉积电压和过渡层对a-C:H膜的生长均具有重要影响.在本实验条件下,以Ti/TiN/TiC为过渡层沉积电压为2500 V时所制备的a-C:H膜中的sp3含量最高.     

一种新型硅碳复合薄膜材料作为锂离子二次电池负极材料的研究

利用气相沉积技术,制备了SixCy层和C层相间的硅碳复合薄膜材料。XRD测试和Raman光谱测试表明,该硅碳复合薄膜材料具有纳米微晶结构。电化学性能测试表明,该SixCy/C复合薄膜材料,具有较低的充放电平台(0·5V以下),对应的首次放电容量达1200mAh/g以上,经过200次循环,容量保持率高于85%。SixCy/C复合薄膜材料性能的改善,主要原因可能源于活性材料Si中的缓冲骨架以及碳的共同作用,它们的存在改善了复合材料的导电性能,也有效缓冲了在充放电过程中活性组分Si所导致的体积变化。     

N离子注入金刚石膜方法合成的CNx膜的成键结构

使用N离子(能量分别为10keV,60keV)注入金刚石膜方法合成CNx膜,用Raman光谱和XPS光谱研究注入前后金刚石膜的成键结构.结果表明,金刚石膜经10keVN离子注入后,在Raman光谱中出现一个较强的金刚石峰(1332cm-1)和一个弱的石墨峰(G带,～1550cm-1).而XPSN15资料显示两个主峰分别位于～398.5eV和～400.0eV.金刚石膜经60keVN离子注入后,N15XPS光谱中的主峰位于～400.0eV;相应地,Raman光谱中的石墨峰变得较强.通过比较,对注入样品的XPS谱中N15的成键结构作如下归属～400.0eV属于sp2C-N键;～398.5eV则属于sp3C-N键.     

Topography,structure, and formation kinetic mechanism of carbon deposited onto nickel in the temperature range from 400 to 850℃

The carbon deposition behavior on nickel particles was observed within the temperature range from 400 to 800℃ in a pure methane atmosphere. The topography, properties, and molecular structure of the deposited carbon were investigated using field-emission scanning electron microscopy (FESEM), temperature-programmed oxidation (TPO) technology, X-ray diffraction (XRD), and Raman spectroscopy. The deposited carbon is present in the form of a film at 400-450℃, as fibers at 500-600℃, and as particles at 650-800℃. In addition, the structure of the deposited carbon becomes more ordered at higher temperatures because both the TPO peak temperature of deposited carbon and the Raman shift of the G band increase with the increase in experimental temperature, whereas the intensity ratio between the D bands and the G band decreases. An interesting observation is that the carbon deposition rate is suppressed in the medium-temperature range (M-T range) and the corresponding kinetic mechanism changes. Correspondingly, the FWHM of the G and D1 bands in the Raman spectrum reaches a maximum and the intensities of the D2, D3, and D4 bands decrease to low limits in the M-T range. These results indicate that carbon structure parameters exhibit two different tendencies with respect to varying temperature. Both of the two group parameters change dramatically as a peak function with increasing reaction temperature within the M-T range.     

用慢正电子束测定类金刚石薄膜中的缺陷浓度

对在不同极板负偏压下采用射频-直流等离子体方法制备得到的类金刚石膜(a-C:H)的微结构进行了测量,利用慢正电子束实验装置,探测并分析了样品缺陷浓度的分布情况.结果表明,在不同偏压下制备的薄膜,其膜中缺陷浓度存在很大差别,但在900 V偏压下制得的样品,膜中的缺陷浓度最低.     

掺铝氧化锌(AZO)薄膜制备及结合机理探索

利用射频磁控溅射法以ZnO:Al2O3陶瓷靶材为源在丙纶非织造布上制备了AZO薄膜.采用扫描电镜(SEM)分析溅射时间对薄膜微结构的影响.结合能谱分析仪(EDX)对薄膜成分进行分析表征.分析探讨了在丙纶非织造布上溅射沉积纳米薄膜与基材的结合机理.结果表明:随着溅射时间的延长,薄膜的均匀性致密性越来越好;溅射得到的纳米薄膜元素的特征峰明显,纯度高;薄膜与基材之问结合是物理、化学等多种力共同作用的结果.     

激光退火能量对非晶Si薄膜晶化的影响

采用XeCl准分子脉冲激光,在真空环境中烧蚀单晶Si靶,在Si(111)和石英衬底上沉积生成非晶Si薄膜.在同样的环境下,用激光对非晶Si薄膜进行退火,通过扫描电子显微镜和拉曼光谱仪对退火后的样品进行分析比较.结果表明,激光能量对非晶薄膜的晶化和纳米晶粒尺寸有重要影响.     

Correlation between structure and hardness of magnetron sputtering deposited CNx films

Carbon nitride films are deposited on Si (001) substrates by reactive dc magnetron sputtering graphite in a pure N2 discharge. The structure of carbon nitride films has been probed using Fourier transformation infrared, near edge X-ray absorption fine structure (NEXAFS) and high resolution electron microscopy (HREM), and the hardness has been evaluated in nanoin-dentation experiments. FTIR spectra show that N atoms are bound to sp1, sp2, and sp3 hybridized C atoms. C1s NEXAFS spectra show that the intensity of π* resonance is the lowest for the film grown at substrate temperature TS = 350℃, with a turbostratic-like structure and high hardness, while it is the highest for the film grown at TS = 100℃, with an amorphous structure and low hardness. The correlation between the structure and hardness of carbon nitride films has been discussed.     

多晶3C-SiC薄层的淀积生长及结构性能分析

采用ＨＦＣＶＤ生长法,以较低生长温度,在Ｓｉ（１１１）衬底上淀积３Ｃ－ＳｉＣ（１１１）薄层。用ＸＲＤ、ＶＡＳＥ、ＸＰＳ等分析手段研究了薄层的结构、光学常数、组分及化学键等性能。ＸＲＤ显示薄层具有明显的择优取向特征。ＶＡＳＥ测量出薄层的折射率为２．６８６,光学常数随深度的变化曲线反映出薄层的多层结构。ＸＰＳ深度剖面曲线表明薄层中Ｓｉ／Ｃ原子比符合ＳｉＣ的理想化学计量比,其能谱证明Ｃ１ｓ与Ｓｉ２ｐ成键形成具有闪锌矿结构的３Ｃ－ＳｉＣ。     

Topography,structure, and formation kinetic mechanism of carbon deposited onto nickel in the temperature range from 400 to 850℃

The carbon deposition behavior on nickel particles was observed within the temperature range from 400 to 800℃ in a pure methane atmosphere.The topography,properties,and molecular structure of the deposited carbon were investigated using field-emission scanning electron microscopy (FESEM),temperature-programmed oxidation (TPO) technology,X-ray diffraction (XRD),and Raman spectroscopy.The deposited carbon is present in the form of a film at 400-450℃,as fibers at 500-600℃,and as particles at 650-800℃.In addition,the structure of the deposited carbon becomes more ordered at higher temperatures because both the TPO peak temperature of deposited carbon and the Raman shift of the G band increase with the increase in experimental temperature,whereas the intensity ratio between the D bands and the G band decreases.An interesting observation is that the carbon deposition rate is suppressed in the medium-temperature range (M-T range) and the corresponding kinetic mechanism changes.Correspondingly,the FWHM of the G and D1 bands in the Raman spectrum reaches a maximum and the intensities of the D2,D3,and D4 bands decrease to low limits in the M-T range.These results indicate that carbon structure parameters exhibit two different tendencies with respect to varying temperature.Both of the two group parameters change dramatically as a peak function with increasing reaction temperature within the M-T range.     

Electrochemical Behaviour of Sputtering Deposited DLC Films

Diamondlike carbon (DLC) films were deposited via magnetron sputtering process. The energetic ion bombardment on the surface of growing film is one of the major parameters that control the atom mobility on the film surface and further the physical and chemical characteristics of the films. In this study, the energy of carbon ions was monitored by changing sputtering power density, and its effect on the electrochemical performance of the films was investigated. For the deposition at a higher sputtering power density, a higher sp3 content in the DLC films was achieved with denser structure and increased film-substrate adhesion. The impedance at the interface of Si substrate/sulfuric acid solution was significantly enhanced, and at the same time higher film resistance, lower capacitance, higher breakdown potential and longer breakdown time were observed, which were related to the significant sp3 content of the DLC films.