多晶3C-SiC薄层的淀积生长及结构性能分析

采用ＨＦＣＶＤ生长法，以较低生长温度，在Ｓｉ（１１１）衬底上淀积３Ｃ－ＳｉＣ（１１１）薄层。用ＸＲＤ、ＶＡＳＥ、ＸＰＳ等分析手段研究了薄层的结构、光学常数、组分及化学键等性能。ＸＲＤ显示薄层具有明显的择优取向特征。ＶＡＳＥ测量出薄层的折射率为２．６８６，光学常数随深度的变化曲线反映出薄层的多层结构。ＸＰＳ深度剖面曲线表明薄层中Ｓｉ／Ｃ原子比符合ＳｉＣ的理想化学计量比，其能谱证明Ｃ１ｓ与Ｓｉ２ｐ成键形成具有闪锌矿结构的３Ｃ－ＳｉＣ。

Deposition and Structure Characterization of Polycrystalline

Polycrystalline 3C SiC films are deposited on Si(111) substrate using H 2 SiH 4 CH 4 by HFCVD method at the lower temperature. Such characteristics of the films as the structures, optical constant, components and chemical bonds are studied by X ray diffraction(XRD), variable angle spectroscopic ellipsometry(VASE) and X ray photoelectron spectroscopy(XPS), etc. XRD displays the films characterized by the obvious preferred orientation. The refractive index of the films determined by VASE is 2.686. The film polylaminate structure is reflected with the varying curves in the depth of optical constants. XPS depth profile curves indicate that Si/C atomic ratio in the film is in coincidence with the ideal stoichiometric ratio, whose energy specscope proves that C 1s and Si 2p in bond forms are of crystal 3C SiC structure.