不同热处理条件下的Ag/Ni超晶格薄膜层状结构的X射线衍射研究

用Ｘ射线衍射法,对经不同条件热处理后的Ａｇ／Ｎｉ超晶格薄膜的结构进行研究．结果表明,未经热处理的超晶格膜显示良好的人工双元素层调制周期性,且存在［１１１］晶向垂直于膜面的织构．升温时的应变弛豫使超晶格膜的晶格沿垂直于膜面方向发生轻微收缩,直至达平衡态．热处理形成新晶粒,其取向不再严格有序,减弱了薄膜的［１１１］织构．加热所激发的原子长程扩散导致一些元素层厚度减小并趋于消失,而另外的元素层厚度增大,从而使人工调制周期性逐渐被破坏;原始态超晶格膜元素层的厚度越大,则周期结构的热稳定性相应也越高,这部分归因于原子扩散长度与元素层厚度成正比关系     

具有垂直各向异性的Co/Pt多层膜中各Co层之间铁磁性耦合

使用磁控溅射法制备了一系列具有不同Pt中间层厚度的glass/NiO(1.nm)/[Co(0.4.nm)/Pt(0.5.nm)]3/Pt(xnm)/[Co(0.4.nm)/Pt(0.5.nm)]3样品并对Co层之间的铁磁性耦合强度进行了测量.整体磁滞回线和局部磁滞回线的测量结果表明,上下两层Co/Pt多层膜之间的铁磁性耦合强度随着Pt中间层厚度的增加单调减小,当Pt中间层厚度超过4.nm时铁磁性耦合消失.除了上下两层Co/Pt多层膜之间通过Pt中间层产生的铁磁性耦合作用之外,它们之间也存在弱的次耦合作用,这导致底层出现宽的磁滞.     

镍基单晶高温合金磨削变质层工艺试验研究

为探究镍基单晶高温合金的磨削变质层工艺特性，采用单因素试验的方法，研究不同磨削参数及冷却条件对磨削变质层厚度的影响规律.结果表明，在镍基单晶高温合金DD5的磨削表面及亚表面存在一定厚度的磨削变质层.磨削变质层中的塑性变形层内γ相和γ′相发生剧烈扭曲变形且磨削变质层的硬度大于基体.不同磨削参数及冷却条件对磨削变质层厚度产生不同影响，随着砂轮线速度、磨削深度、工件进给速度的增加，磨削变质层厚度的变化分别表现为先减小后增大、不断增大、先增大后减小；在试验参数范围内，微量润滑(MQL)作为冷却条件可以降低相应的磨削变质层厚度，最多达到3.5μm.     

Fe/Cr(001)超晶格层间耦合和自旋极化的第一性原理计算

采用基于密度泛函理论的平面波赝势法对Fe／Cr（001）起晶格的层间耦合和自旋极化进行了系统地研究．结果表明：理想Fe／Cr超晶格的层间耦合随反铁磁Cr层层数的增加呈短周期性振荡；在较稳定的结构中，整个Cr层都以较大的磁矩被极化，且极化程度受铁磁层原子数的影响较大．     

Chemical states of the atoms in magnetic multilayersTa/NiOx/Ni81Fe19/Ta and Co/AlOx/Co

Ta/NiOx/Ni81Fe19/Ta and Co/AiOx/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) and the coercivity (Hc)of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1and the valence of nickel is +2. At this point, NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx /NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AIOx/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AIOx was 1.2 nm.     

多层结构有机物薄膜制备及光致发光特性

利用有机物真空沉积技术制备了8-羟基喹啉铝（Alq）和叔丁基联苯基苯基二唑（PBD）交替生长的多层结构薄膜．低角X射线衍射测量表明，样品具有良好的层状结构；光吸收及光致发光测量结果表明，随着PBD层厚度的减薄，激发态能量发生了从PBD向Alq层中转移的现象．     

不连续Fe25Ni75/SiO2多层膜的微结构和隧道磁电阻效应

用射频磁控溅射技术制备了[SiO2(t1)/Fe25Ni75(t2)]N多层膜系列(其中t1和t2分别代表SiO2层和Fe25Ni75层的厚度,N代表层数).研究发现,对[SiO2(3.3 nm)/Fe25Ni75(t2)]10系统,当Fe25Ni75层厚度小于2.4 nm时,Fe25Ni75层从连续变为不连续;当Fe25Ni75层不连续时,lnR基本上正比于T-1/2,表明导电机制为热激发的隧穿导电;在t2=2.1 nm时,隧道磁电阻(TMR)有极大值,为-0.64%.对[SiO2(1.8 nm)/Fe25Ni75(1.6 nm)]N系统,发现磁电阻先随着层数的增加而增加,然后趋于饱和.     

化学水浴法制备ZnO阵列及其光伏性能研究

采用溶胶旋转涂覆技术和化学水浴两步工艺法制备了ZnO阵列,研究了种晶层对ZnO阵列的形貌、晶体结构的影响,并考察了所制备的ZnO阵列用作染料敏化太阳电池光电极的光伏性能.结果表明：沿（O02）晶面择优生长的种晶层,可为ZnO阵列的有序生长起到诱导作用,尤其是当种晶层面朝下放置时,ZnO阵列基本保持了种晶的结晶取向和尺寸大小,棒状阵列直径为50100nm.由此阵列作为光电极构成的DSCs的短路电流和填充因子较低,从而使得光电转换效率处于较低水平,主要原因可能是阵列太致密、薄膜厚度小,使得染料的吸附量低所致.     

Strong polarization enhancement in asymmetric three-component ferroelectric superlattices

Theoretical predictions--motivated by recent advances in epitaxial engineering--indicate a wealth of complex behaviour arising in superlattices of perovskite-type metal oxides. These include the enhancement of polarization by strain and the possibility of asymmetric properties in three-component superlattices. Here we fabricate superlattices consisting of barium titanate (BaTiO3), strontium titanate (SrTiO3) and calcium titanate (CaTiO3) with atomic-scale control by high-pressure pulsed laser deposition on conducting, atomically flat strontium ruthenate (SrRuO3) layers. The strain in BaTiO3 layers is fully maintained as long as the BaTiO3 thickness does not exceed the combined thicknesses of the CaTiO3 and SrTiO3 layers. By preserving full strain and combining heterointerfacial couplings, we find an overall 50% enhancement of the superlattice global polarization with respect to similarly grown pure BaTiO3, despite the fact that half the layers in the superlattice are nominally non-ferroelectric. We further show that even superlattices containing only single-unit-cell layers of BaTiO3 in a paraelectric matrix remain ferroelectric. Our data reveal that the specific interface structure and local asymmetries play an unexpected role in the polarization enhancement.     

Highly <Emphasis Type="Italic">C</Emphasis>-axis oriented LiNbO<Subscript>3</Subscript> thin film on amorphous SiO<Subscript>2</Subscript> buffer layer and its growth mechanism

LiNbO3 waveguiding films with highly C-axis orieatation and superior crystallographic quality have been deposited on the amorphous SiO2 buffer layer of Si wafer by pulsed laser deposition (PLD) technique. X-ray diffraction,high-resolution electron transmission microscopy and atomic force microscopy were applied to characterizing the quality and orientaion of LiNbO3 thin film, and the optimized depositioa coaditioas have been determined for C-axis oriented growth. LiNbO3 thin films on amorphous SiO2 buffer layer were composed of intimate arrangements of quadrangular single crystal domain (150 nm x 150 nm) with C-axis orientatioa, and displayed sharp interface structures. The measurements of prism coupling technique indicate that the laser can be coupled into the LiNbO3 film and TE and TM waveguiding modes were detected. In addition, the possible mechanism of oriented growth on amorphous buffer layer and “film-substrate effects“ were discussed briefly, which suggests that its growth mechanism is likely analogous to the Voimer model with characteristics of three-dimensional islands nucleation on the smooth crystal surface.     

Study on NiO/Fe interface with X-ray photoelectron spectroscopy

Different monolayers (ML) of Fe atoms were deposited on NiO (001) substrates or NiO underlayers using molecular beam epitaxy (MBE), pulse laser deposition (PLD), and magnetron sputtering (MS). The magnetic properties and microstructure of the films were studied. The apparent magnetic dead layer (MDL) is found to exist at the NiO/Fe interfaces of the MBE sample (about 2 ML MDL), the PLD sample (about 3 ML MDL), and the MS sample (about 4 ML MDL). X-ray photoelectron spectroscopy indicates the presence of ionic Fe (Fe2+ or Fe3+) and metallic Ni at the NiO/Fe interfaces, which may be due to the chemical reactions between Fe and NiO layers. This also leads to the formation of MDL. The thickness of the MDL and the reaction products are related with the deposition energy of the atoms on the substrates. The interfacial reactions are effectively suppressed by inserting a thin Pt layer at the NiO/Fe interface.     

溴化银单晶/染料体系的光电行为

在(422)晶面的AgBr单晶表面上,真空升华所镀染料薄膜(厚约30nm)呈现均匀非晶聚集体。夹心器件:导电玻璃(受光面)/AgBr单晶/染料/Ag的光电流响应谱,与器件:Al/Al_2O_3(受光面)/染料/Ag很相近,可以认为AgBr的能带在与染料接触界面附近向上弯曲,类似于Al/Al_2O_3/染料界面的Schottky势垒,AgBr价带向上弯曲使空穴被“拉”向价带顶,导致部分自由电子复合以及减感。在AgBr单晶/染料体系中,对于增感染料,光电子从染料流向AgBr的导带;而对减感染料则相反。这些体系的伏安特性表明AgBr单晶中晶格与同隙离子之间的分布并不保持平衡。     

GaN基LED中Ag/ITO复合膜的光电性能研究

制备含有不同厚度Ag(0.5、2、4nm)的Ag/ITO多层膜沉积在以蓝宝石为衬底的外延片上并与P-GaN相接触,经过一定的退火处理。研究了Ag厚度、退火温度、退火时间对Ag/ITO多层膜的透过率、方块电阻和接触电阻率的影响。得出这种光电性能优良的Ag/ITO膜作为P型透明电极应用于大功率LED有广阔的前景。     

Electric transmission behavior of self-assembled Cu–W nano multilayers

Metallic nano multilayers were usually prepared by dual targets alternating deposition method. In this paper, a series of self-assembled Cu–W nano multilayers with different modulation periods were deposited on single crystal silicon substrate by dual targets confocal magnetron sputtering technique. The self-assembled film presented an alternation of W-rich layer and Cu-rich layer. The degree of coherence of the layered interface can be adjusted by controlling both the solid solubility of W-rich and Cu-rich layers. The film resistance increment of the self-assembled Cu–W multilayers is only 14% when the modulation period decreases from 68.2 nm to 5.3 nm,having less size effect compared to the film prepared by alternating deposition method. It noticed that the film resistance even decreased slightly when the modulation period decreased to below 5.3 nm. These results suggested that the coherence could weak the interface scattering ability to electrons, so the self-assembled Cu–W multilayers have lower resistance than the multilayer prepared by alternating deposition technique. This study presented a new pathway to enhance the conductivity of the multilayers.     

[Ag／CoPt]n／Ag薄膜的结构和磁性

采用磁控溅射方法在玻璃基片上制备了[Ag／CoPt]n／Ag薄膜,并在600℃退火30min．结果表明,Ag掺杂厚度（x）对CoPt薄膜的结构和磁性影响很大．当Ag层厚度为0．5nm时,薄膜的垂直取向程度最高,其垂直矫顽力高达8．68×10^5A·m^-1而平行矫顽力仅为0．54×10^5A·m^-1．适当厚度的Ag不仅有利于薄膜的垂直取向,而且能降低晶粒间的交换耦合作用．     

Flexible organic light-emitting diodes with ITO／Ag／ITO multi-layers as anodes

The transparent ITO/Ag/ITO multi-layers are developed as anodes on flexible PET (poly(ethylene terephthalate)) substrates. The influence of these anodes on FOLED (Flexible Organic Light-emitting Diodes) is investigated. From the results of research, it can be seen that the multi-layer anode has optimum characteristics, whose sheetresistance is 11 Ω and optical transmittance is about 80%,when the thickness of Ag sandwiched by two ITO layers is in the range of 14--18 nm. It is demonstrated that the OLED devices with multi-layer anodes give better luminescence and higher efficiency compared with those with single ITO anodes.     

Fe层厚度对Fe／Mo多层膜巨磁电阻的影响

详细研究了用溅射法制备的Ｆｅ／Ｍｏ多层膜系统的结构，磁性及磁电阻效应。发现当保护Ｍｏ层厚度为０．８ｎｍ、Ｆｅ层厚度ｄＦｅ由２．２ｎ，减到０．４ｎｍ时，ＧＭＲ在ｄＦｅ〈１．４ｎｍ有一迅速增加，并在ｄＦｅ＝０．９ｎｍ时达极大值，然后下降，矫顽力显示出类似的行为。     

银粉活化镀铜、界面结构与性能

将经硅烷偶联剂KH-560改性后的银粉均匀涂覆到预固化的环氧树脂表面,银粉经过处理后可作为活性中心活化化学镀铜,得到致密、导电性高、结合力强的铜镀层。采用傅里叶变换红外光谱仪（FT-IR）、X射线光电子能谱仪（XPS）、扫描电子显微镜（SEM）、X射线测厚仪、能谱仪（EDS）、电阻测试仪等手段系统研究了KH-560改性后银粉的化学态、化学可镀性、银粉界面层的结构与厚度、镀层与树脂之间的结合力以及镀层的导电性,结果表明：KH-560可以成功改性银粉,银粉表面的硅烷偶联剂膜会影响银催化镀铜的效果,但可以通过水解去除偶联剂膜从而暴露出银粉达到催化化学镀铜的目的。当KH-560用量（占银粉质量分数）为4%时,镀层与树脂之间的结合力最大为2.27 MPa,较未用KH-560改性银粉镀层的结合力提升了25.4%;铜镀层均匀致密,电导率约为3.15×10⁷ S/m。     

表面活性剂Bi对自旋阀多层膜交换耦合场的影响及其微结构分析

采用磁控溅射方法制备了Ta(10nm)/NiFe(8nm)/Cu(2.6nm)/NiFe(3.6nm)/FeMn(9nm)/Ta(10nm)自旋阀多层膜.在Cu/NiFe界面沉积适量厚度的Bi原子能够有效地提高交换耦合场,沉积过量的Bi原子会导致交换耦合场下降.X射线光电子能谱分析结果表明:沉积在Cu/NiFe界面的Bi原子可以有效地抑制Cu原子在NiFe层表面的偏聚;当沉积过量的Bi原子时,Bi原子会进一步迁移到FeMn中,形成杂质,从而破坏了FeMn的反铁磁性,使交换耦合场降低.     

Co-W磁性薄膜应变对其有效磁晶各向异性能的影响

利用磁控溅射在250℃的MgO(220)单晶基片上先后沉积Cr(100 nm)下底层和不同厚度(9~80 nm)的Co-11%W(原子分数)磁性层,二者取向附生生长关系为Cr(112)[111]∥Co-W(1010)[1210]和Cr(112)[110]∥Co-W(1010)[0001].随着膜厚的增加,Co-W在薄膜面内的压应变(ε0)从0.781 3%减小到0.544 5%,相应地其有效磁晶各向异性能一级常数Ke1ff由3.82×106减小到2.58×106erg/cc.该结果表明通过设计磁性层和下底层之...