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Co-W磁性薄膜应变对其有效磁晶各向异性能的影响
引用本文:秦高梧,肖娜,李松,任玉平.Co-W磁性薄膜应变对其有效磁晶各向异性能的影响[J].东北大学学报(自然科学版),2012,33(1):77-80,85.
作者姓名:秦高梧  肖娜  李松  任玉平
作者单位:1. 东北大学材料各向异性与织构教育部重点实验室,辽宁沈阳,110819
2. 东北大学材料电磁过程研究教育部重点实验室,辽宁沈阳,110819
基金项目:教育部新世纪优秀人才支持计划项目,教育部留学回国人员科研启动基金资助项目,辽宁省高等学校优秀人才支持计划项目
摘    要:利用磁控溅射在250℃的MgO(220)单晶基片上先后沉积Cr(100 nm)下底层和不同厚度(9~80 nm)的Co-11%W(原子分数)磁性层,二者取向附生生长关系为Cr(112)111]∥Co-W(1010)1210]和Cr(112)110]∥Co-W(1010)0001].随着膜厚的增加,Co-W在薄膜面内的压应变(ε0)从0.781 3%减小到0.544 5%,相应地其有效磁晶各向异性能一级常数Ke1ff由3.82×106减小到2.58×106erg/cc.该结果表明通过设计磁性层和下底层之...

关 键 词:应变  磁记录介质  磁晶各向异性能  取向附生  Co-W  

Effect of Strain of Co-W Thin Film on Effective Magnetic Anisotropy Energy
QIN Gao-wu,XIAO Na,LI Song,REN Yu-ping.Effect of Strain of Co-W Thin Film on Effective Magnetic Anisotropy Energy[J].Journal of Northeastern University(Natural Science),2012,33(1):77-80,85.
Authors:QIN Gao-wu  XIAO Na  LI Song  REN Yu-ping
Institution:1(1.Key Laboratory for Anisotropy and Texture of Materials,Ministry of Education,Northeastern University,Shenyang 110819,China;2.Key Laboratory of Electromagnetic Processing of Materials,Ministry of Education,Northeastern University,Shenyang 110819,China.)
Abstract:Co-11at%W films with different thicknesses(9~80 nm) were deposited on MgO(220) single crystal substrate with Cr underlayer(100 nm) by magnetron sputtering.The epitaxial growth relationship between Cr and Co-W layer is Cr(112)∥Co-W(1010) and Cr(112)∥Co-W(1010).With the increasing of Co-W film thickness,the in-plane strain of Co-W layer decreases from-0.388 4% to-0.271 1%,while the out-of-plane strain decreases from 0.781 3% to 0.544 5%,and the first order effective magnetic anisotropy constant Keff1 decreases from 3.82×106 erg/cc to 2.58×106 erg/cc correspondingly.The results showed that the effective magnetic anisotropy energy of magnetic layer can be tuned by adjusting the strain between underlayer and magnetic layer.
Keywords:strain  magnetic recording media  magnetic animtropy energy  epitaxial growth  Co-W
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