基底温度对氮化硼薄膜场发射特性的影响

利用射频磁控溅射方法， 真空室中充入高纯N_{2(99.99%)和高纯Ar（99.99%）的混合气体， 在n型（100）Si基底上沉积了六角氮化硼（h-BN）薄膜. 在超高真空（<10^-7 Pa）系统中测量了BN薄膜的场发射特性， 发现 沉积时基底温度对BN薄膜的场发射特性有很大影响. 基底温度为500 ℃时沉积的BN薄膜样品场发射特性要好于其他薄膜， 阈值电场为12 V/μm， 电场升到34 V/μm， 场发射电流为280 μA/cm². 所有样品的Fowler-Nordheim(F-N)曲线均近似为直线， 表明电子是通过 隧道效应穿透BN薄膜发射到真空的.}     

氮化硼薄膜的厚度对场发射特性的影响

利用射频磁控溅射方法, 在n型（100）Si基底上沉积了不同厚度（54~124 nm）的纳米氮化硼（BN）薄膜. 红外光谱分析表明, BN薄膜结构为六角BN（h-BN）相(1 380 cm^-1和780 cm^-1)结构. 在超高真空系统中测量了不 同膜厚的场发射特性, 发现阈值电压随着厚度的增加而增大. 厚度为54 nm的BN薄膜样品阈 值电场为10 V/μm, 当外加电场为23 V/μm时, 最高发射电流为240 μA/cm². BN薄膜场发射F-N曲线表明, 在外加电场作用下, 电子隧穿了BN薄膜表面势垒发射到真空.     

SP~2键含量对非晶金刚石膜电子场发射性能的影响

该文研究了真空磁过滤弧沉积方法制备的非晶金石薄膜 (a-DF)的电子场发射性能 ,SP2 键含量不同的薄膜的场发射性能有很大的差异 ,SP2 键含量越高 ,阈值电场越小 ,发射电流越大 ,同时失效率也较高。SP2 键含量为 6 .5% ,2 0 % ,40 %的薄膜 ,其阈值电场分别为2 .7V/ μm,1 .5V/ μm ,0 .7V/ μm ,远小于金属和硅尖锥的阈值电场。所有样品的发射点均为随机的点状分布。     

四角状纳米ZnO的制备及其场发射性能

利用热蒸发法制备出了新颖的四角状ZnO纳米棒. 研究了四角状纳米ZnO的场发射特性. 场发射测试表明四角状ZnO纳米棒具有较好的场发射特性, 开启电场为2.9 V/μm, 阈值电场为5.4 V/μm. 这一结果表明四角状ZnO纳米棒是一种性能优良的冷阴极电子发射源.     

纳米金刚石阴极的均匀性及场发射特性研究

目的研究纳米金刚石阴极电泳工艺对场发射电流的均匀性、稳定性以及场发射特性的影响。方法用金相显微镜、扫描电子显微镜、X射线衍射和拉曼光谱观察了涂层的形貌和结构,经过高温真空退火后测试场发射性能,分析样品发光照片与涂层均匀性的关系,探讨热处理后场发射性能提高的机理。结果基底钛预处理要保持适当的平整度及光滑度,过度粗糙及过度光滑都不利于涂层的均匀性沉积。在同样的工艺条件下采用异丁醇溶剂配方后的金刚石涂层表面均匀性最好,场发射阈值电场最小,为5.5V/μm;当电场强度为15V/μm时,场发射电流密度为85μA/cm2,而且场发射电流的稳定性最好,发光效果最佳。结论异丁醇分散的电泳液制备的纳米金刚石阴极涂层均匀性最好,热处理后场发射性能最佳。     

基底偏压对磁控溅射沉积MoSi2薄膜结构及力学性能的影响

针对不同基底偏压下制备的MoSi_2薄膜呈现不同结构及性能的问题,采用直流磁控溅射工艺,在单晶硅表面制备了MoSi_2薄膜。采用X射线衍射仪、场发射扫描电镜、原子力显微镜和纳米压痕仪等分析手段,探究了基底偏压对磁控溅射沉积MoSi_2薄膜形貌结构、生长特性、组织和性能的影响。研究结果表明:不同基底偏压制备的薄膜主要为六方相MoSi_2,且存在明显的(111)面择优取向。基底偏压和基底温度的协同作用,使薄膜的自退火效应更加明显。随着基底偏压的增加,薄膜的结晶效果显著提高,并出现四方相MoSi_2和Mo_5Si_3相。基底偏压的增加使薄膜的厚度、弹性模量及纳米硬度先上升后下降。当基底偏压为-100 V时,薄膜的厚度、弹性模量及纳米硬度达到最大值,分别为1 440 nm、192.5 GPa和10.56 GPa。     

纳米ZnO阵列场发射性能研究

目的 为了进一步提高ZnO纳米阵列的场发射性能指标.方法 采用掺杂n型杂质元素Al和衬底预处理的方法生长ZnO纳米阵列,对相应样品的场发射性能进行比较分析.结果 和结论采用Al掺杂和衬底镀Au处理均提高了ZnO纳米阵列场发射的性能,降低了阈值场强.其中衬底镀Au并在此衬底上生长的Al掺杂ZnO纳米阵列开启电场小于0.5 V/μm、阈值电场为4.5 V/μm.     

低温淀积纳米非晶碳薄膜的场发射特性研究

以n型 ( 10 0 )Si为衬底 ,用CH4 和H2 作反应气体 ,在 150℃的衬底温度下淀积了非晶碳平面薄膜 .SEM照片和AFM均显示该薄膜具有很好的均匀性 ,非晶碳粒的尺寸为 90～ 10 0nm .喇曼谱分析表明 ,薄膜的主要成分为SP2 非晶碳 .对样品薄膜的不同区域进行了场发射特性的测试 ,各被测区域的场发射特性表现出很好的一致性 .在不同电压下进行了发光测试 .实验表明 ,样品薄膜的开启电场很低 ,约为 4V/ μm ,在 7V/ μm的电场下 ,场发射电流密度为 0 0 16A/cm2 ;用迭代法计算得薄膜的功函数为 0 65V .通过对样品的实际发射面积估算 ,得出发射点密度为 6× 10 4cm- 2 .     

钛基纳米金刚石涂层场发射阴极的工艺改进

钛基纳米金刚石涂层场发射阴极适于大面积制备,但原始工艺制备出的样品场发射性能较低.为提高样品的性能,对原始工艺进行了改进:首先,改变分散液成分,在原分散液中加入表面活性剂以改善金刚石纳米粉的分散效果;其次,改变真空热处理(HFCVD)系统的热丝结构使样品热处理时的温度场更加均匀;最后,在原工艺基础上增加表面处理环节,用射频氢等离子体对金刚石纳米粉涂层进行表面处理以降低样品的场发射阈值.经过工艺改进,样品的阈值场强由6.3 V/μm降低至1.9 V/μm,在17.6 V/μm场强下的场发射电流密度由56.1μA/cm2提高到61μA/cm2.     

硫化铜三维纳米片/带结构的制备及场发射性能

采用阳极氧化法,一步制备出了三维分布的硫化铜纳米片/带结构薄膜.实验发现,通过改变阳极氧化电流,可调控硫化铜纳米片/带结构的形貌演化,使之形成有利于场发射的三维合理分布.这既能生成更多的有效场发射位点,增强局域场,又可适当降低场屏蔽效应,几则协同作用使得硫化铜三维纳米片/带结构薄膜的场发射特性显著增强.开启电场可由8.2V·μm~(-1)降低至1.9V·μm~(-1),阈值场由13.5V·μm~(-1)降低至5.0V·μm~(-1),场增强因子最高可达6958.该硫化铜三维纳米片/带结构薄膜制备方法简便,开启电场低,电流密度较大,热稳定性好,在真空微纳米电子器件领域有潜在的应用前景.     

负偏压对六方氮化硼薄膜沉积特性的影响

利用射频磁控溅射法在n型Si(100)衬底上沉积六方氮化硼薄膜(h-BN),采用AFM、Raman、XPS、FTIR等技术研究负偏压对所沉积薄膜生长模式、结构、表面粗糙度、薄膜取向、相变等特性的影响。结果表明,当负偏压为0V时,沉积所得h-BN薄膜表面粗糙度较低、结晶性良好、c轴垂直于衬底且以层状模式生长;随着负偏压的增加,薄膜由层状模式生长转变为岛状模式生长,表面粗糙度增加,且h-BN经亚稳相E-BN和wBN向c-BN转变,使得BN薄膜相系统更加混乱,不利于高质量层状h-BN薄膜的获取。     

Field emission of SiCN thin films bombarded by Ar<Superscript>+</Superscript> ions

SiCN thin films were synthesized by a radio frequency chemical vapor deposition (RFCVD) system on P-type Si (1 0 0) wafers using C₂H₄, SiH₄ and N₂ as raw materials, In order to get rid of the oxygen absorbed on the surface and improve the characteristics of electron field emission, Ar⁺ ions of low energy were used to bombard the samples. The field emission characteristics of SiCN thin films before and after Ar⁺ bombardment were studied in the super vacuum environment of 10⁻⁶ Pa. It was showed that the turn-on field (defined as the point where the current-voltage curve shows a sharp increase in the current density) decreased from 38 V/μm before bombardment to 25 V/μm after bombardment. And the maximum emission current density increased from 159.2 to 267.4 μA/cm². The composition before and after Ar⁺ bombardment was compared using X-ray photoelectron spectroscopy (XPS). Our results illustrated that the field emission characteristics were improved after the bombardment of Ar⁺. Foundation item: Supported by the National Natural Science Foundation of China (19975035) Biography: Ma You-peng (1978), male, Master candidate, research direction: novel functional materials film and ion beam modification of materials.     

Simple method to rapidly fabricate chain-like carbon nanotube films and its field emission properties

A simple process to fabricate chain-like carbon nanotube (CNT) films by microwave plasma-enhanced chemical vapor deposition (MPCVD) was developed successfully. Prior to deposition, the Ti/Al₂O₃ substrates were ground with Fe-doped SiO₂ powder. The nano-structure of the deposited films was analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The field electron emission characteristics of the chain-like carbon nanotube films were measured under the vacuum of 10-5 Pa. The low turn-on field of 0.80 V/μm and the emission current density of 8.5 mA/cm2 at the electric field of 3.0 V/μm are obtained. Based on the above results, chain-like carbon nanotube films probably have important applications in cold cathode materials and electrode materials.     

Silicon field emission arrays coated with CN<Subscript>x</Subscript> thin films

Arrays of silicon micro-tips were made by etching the p-type (1 0 0) silicon wafers which had SiO₂ masks with alkaline solution. The density of the micro-tips is 2×10⁴ cm⁻². The Scanning Electron Microscope (SEM) photos showed that the tips in these arrays are uniform and orderly. The CN_x thin film, with the thickness of 1.27 μm was deposited on the silicon micro-tip arrays by using the middle frequency magnetron sputtering technology. The SEM photos showed that the films on the tips are smoothly without particles. Keeping the sharpness of the tips will benefit the properties of field emission. The X-ray photoelectron spectrum (XPS) showed that carbon, nitrogen and oxygen are the three major elements in the surfaces of the films. The percents of them are C: 69.5%, N: 12.6% and O: 17.9%. The silicon arrays coated with CN_x thin films had shown a good field emission characterization. The emission current intensity reached 3.2 mA/cm² at 32.8 V/μm, so it can be put into use. The result showed that the silicon arrays coated with CN_x thin films are likely to be good field emission cathode. The preparation and the characterization of the samples were discussed in detail. Foundation item: Supported by the National Natural Science Foundation of China (19975035) Biography: Chen Ming an (1978-), male, Ph. D candidate, research direction: novel functional materials film and ion beam modification of materials.     

Field Emission of SiCN Thin Films Bombarded by Ar~+ Ions

0　IntroductionInthefieldofvacuummicroelectronicdevices,coldcathodeelectronfieldemittersarepotentiallyusefulforfieldemissiondisplays (FED) .FEDareimportantelementsoftheflatpaneldisplays.Comparingwithliquidcrystaldisplays (LCD)andcath oderaytube (CRT)displays,ithasacompactsize ,alargeview ingangle ,excellentbrightnessandhighpicturequality[1 ] .Muchresearchhasbeenperformedtounderstandandimprovethefieldemissionpropertiesofthinfilmsandthinfilmstructures.Withthedevelopmentsofvacuummicroelectro…     

金刚石薄膜的制备、表征和场发射性能

系统研究了在微波等离子体化学气相沉积(MPCVD)系统中,甲烷浓度、沉积气压、气体流量比、衬底的预处理等参数工艺对金刚石薄膜质量的影响,不同样品的扫描电镜(SEM)图片表明上述参数工艺对金刚石薄膜的微观形貌如:晶粒尺寸、均匀性、膜的连续性、致密性等具有重要影响.金刚石薄膜样品尖锐的1332cm-1Raman峰表明金刚石膜具有很高的晶化质量,与SEM图片一致.最后研究了样品的场发射特性,获得了较低的发射阈值电压4.4V/μm,电压为650V时,得到较高的约128mA/cm2的发射电流密度.     

Electron field emission from nano-crystalline Si films deposited by inductively coupled plasma CVD at room temperature

ELECTRON FIELD EMISSION IS ONE OF THE INTERESTING PER- FORMANCES OF NANO-SCALE MATERIALS [1-3]. CARBON NANO- TUBES HAVE BEEN DEMONSTRATED TO BE THE MOST FASCINAT- ING MATERIAL OF ELECTRON FIELD EMISSION, BUT THEIR INSTA- BILITY OF EMISSION DUE TO THE AGING EFFECT LIMITS THEIR APPLICATION IN VACUUM ELECTRONICS [4]. SI TIPS HAVE MORE FAVORITE GEOMETRIC FEATURE AND MORE STABLE C…     

放电处理高分子薄膜场致发射阴极的研究

考察了聚苯胺（PANI—CSA）、聚对苯乙烯磺酸（PEDOT）、聚乙烯咔唑（PVK）和聚甲基丙烯酸甲酯（PMMA）4种高分子薄膜经放电处理后的场致电子发射性能．首先将这些材料配制成溶液分别在ITO玻璃衬底上旋涂成膜,放入真空测试箱中,通过放电处理这些薄膜的表面;再将处理好的薄膜作为阴极发射体．文中比较了这些薄膜的场致发射阈值电压、电流一电压特性曲线以及相应的福勒一诺德海姆（F-N）曲线,测试了这4种高分子薄膜的电导率,比较电导率对放电处理结果的影响．实验证明,电场作用下高分子薄膜的电子发射能力和电导率有关,具较高电导率的高分子薄膜经表面放电处理后其发射能力更强．