| 负偏压对六方氮化硼薄膜沉积特性的影响 |
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| 作者姓名： | 龚 甜 吴 隽 李涛涛 龙晓阳 祝柏林 祁 婷 |
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| 作者单位： | 武汉科技大学省部共建耐火材料与冶金国家重点实验室,湖北 武汉,430081,武汉科技大学省部共建耐火材料与冶金国家重点实验室,湖北 武汉,430081,中国科学院苏州纳米技术与纳米仿生研究所,江苏 苏州,215123,武汉科技大学省部共建耐火材料与冶金国家重点实验室,湖北 武汉,430081,武汉科技大学省部共建耐火材料与冶金国家重点实验室,湖北 武汉,430081,武汉科技大学省部共建耐火材料与冶金国家重点实验室,湖北 武汉,430081 |
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| 基金项目： | 湖北省自然科学基金资助项目(2014CFB798)；中国科学院纳米器件与应用重点实验室开放课题(15QT02). |
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| 摘 要： | 利用射频磁控溅射法在n型Si(100)衬底上沉积六方氮化硼薄膜(h-BN),采用AFM、Raman、XPS、FTIR等技术研究负偏压对所沉积薄膜生长模式、结构、表面粗糙度、薄膜取向、相变等特性的影响。结果表明,当负偏压为0V时,沉积所得h-BN薄膜表面粗糙度较低、结晶性良好、c轴垂直于衬底且以层状模式生长;随着负偏压的增加,薄膜由层状模式生长转变为岛状模式生长,表面粗糙度增加,且h-BN经亚稳相E-BN和wBN向c-BN转变,使得BN薄膜相系统更加混乱,不利于高质量层状h-BN薄膜的获取。
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| 关 键 词： | 六方氮化硼 薄膜 沉积 Si衬底 射频磁控溅射 负偏压 生长模式 粗糙度 相变 |
| 收稿时间： | 2015/3/23 0:00:00 |
Influence of negative bias on deposition characteristics of hexagonal boron nitride thin film |
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| Authors: | Gong Tian Wu Jun Li Taotao Long Xiaoyan Zhu Bolin and Qi Ting |
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| Institution: | State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology, Wuhan 430081,China,State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology, Wuhan 430081,China,Suzhou Institute of Nano-tech and Nano-bionicsSINANO, Chinese Academy of Sciences, Suzhou 215123,China,State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology, Wuhan 430081,China,State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology, Wuhan 430081,China and State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology, Wuhan 430081,China |
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| Abstract: | Hexagonal boron nitride(h-BN) thin films were deposited on the surface of n-type Si(100) substrates by radio frequency (RF) sputtering method. The effects of negative bias on the characteristics of deposited thin fim, such as growth mode, structure, surface roughness,film orientation and phase transition were studied by means of AFM, Raman, XPS and FTIR. The results show that h-BN thin films with relative low surface roughness, good crystallinity, c axis normal to the substrate and layer-by-layer growth mode are produced at a negative bias of 0 V. With the enhancement of negative bias, the growth of thin film changes from layer-by-layer mode to island mode along with the increase of its surface roughness. High negative bias also induces the transformation of h-BN from metastable E-BN and w-BN phase to c-BN phase, which leads to the chaos of BN phase system and is unfavorable for the deposition of high quality h-BN layer thin film. |
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| Keywords: | hexagonal boron nitride thin film deposition Si substrate RF magnetron sputtering negative bias growth mode surface roughness phase transition |
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