MOS器件直接隧穿栅电流及其对CMOS逻辑电路的影响

随着晶体管尺寸按比例缩小,越来越薄的氧化层厚度导致栅上的隧穿电流显著地增大,严重地影响器件和电路的静态特性,为此,基于可靠性理论和仿真,对小尺寸MOSFET (metal-oxide-semiconductor field effect transistor)的直接隧穿栅电流进行研究,并通过对二输入或非门静态栅泄漏电流的研究,揭示直接隧穿栅电流对CMOS(complementary metal oxide semiconductor)逻辑电路的影响.仿真工具为HSPICE软件,MOS器件模型参数采用的是BSIM4和LEVEL 54,栅氧化层厚度为1.4 nm.研究结果表明:边缘直接隧穿电流是小尺寸MOS器件栅直接隧穿电流的重要组成成分;漏端偏置和衬底偏置通过改变表面势影响栅电流密度;CMOS逻辑电路中MOS器件有4种工作状态,即线性区、饱和区、亚阈区和截止区;CMOS逻辑电路中MOS器件的栅泄漏电流与其工作状态有关.仿真结果与理论分析结果较符合,这些理论和仿真结果有助于以后的集成电路设计.     

纳米双栅MOSFETs的量子格林函数模拟

采用一种量子动力学模型研究纳米MOSFET(场效应管)电流特性.该模型基于二维NEGF(非平衡格林函数)方程和Poisson方程自洽全量子数值解.使用该方法研究了纳米双栅MOSFET结构尺寸对电流特性的影响.模拟结果显示:越细长的沟道,器件的短沟效应越弱,器件的亚阈值斜率随栅氧化层增厚而加大.另外,通过分析器件不同区域的散射自能效应,得出减缓纳米双栅MOSFET电流性能下降的途径.所用模型具有概念清晰,求解稳定等特点.作为多体量子模型,本方法可应用于一维量子线及量子点阵列所构成的纳米器件,并有望在纳米MOSFET器件设计中得以应用.     

基于转移矩阵法确定高k介质中泄漏电流共振隧穿机制的存在性

栅隧穿电流已成为制约MOS器件继续缩小的因素之一.为了掌握和控制高k栅栈的栅电流,必须全面了解其中存在的各种隧穿机制.考虑高k介质和二氧化硅间的界面陷阱,建立了高栅栈MOSFET中沟道与栅极交换载流子的双势垒隧穿物理模型.采用量子力学的转移矩阵方法,计算沟道电子通过高栅栈结构的透射系数,模拟得到的透射系数曲线随电子能量变化呈现峰谷振荡的特征.将本文模拟结果与非平衡格林函数及WKB近似方法模拟结果对比,通过论证得出电子能量低于高导带底的透射系数峰为共振隧穿机制所产生,而能量高于高k介质导带底的电子透射系数峰为直接隧穿的结论.     

基于环栅纳米线隧穿场效应晶体管的解析模型

对环栅纳米线结构的隧穿场效应晶体管进行建模分析, 给出电流解析模型, 证明隧穿场效应管有良好的亚阈特性。研究发现, 环栅纳米线隧穿场效应管的亚阈值斜率SS的大小与圆柱体硅直径d_nw、环栅氧化层厚度t_ox以及漏电压V_dd的变化规律均成正比, 即圆柱体硅直径d_nw、环栅氧化层厚度t_ox和漏电压V_dd越小, 亚阈区的性能越好。这一模型的研究为场效应晶体管在低功耗电路中的应用打下良好基础。     

高k栅栈MOSFET共振隧穿模型

针对高介电常数（k）栅堆栈金属氧化物场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET）实际结构,建立了入射电子与界面缺陷共振高k栅栈结构共振隧穿模型.通过薛定谔方程和泊松方程求SiO2和高k界面束缚态波函数,利用横向共振法到共振本征态,采用量子力转移矩阵法求共振隧穿系数,模拟到栅隧穿电流密度与文献中实验结果一致.讨论了高k栅几种介质材料和栅电极材料及其界面层（IL）厚度、高k层（HK）厚度对共振隧穿系数影响.结果表明,随着HfO2和Al2O3厚度减小,栅栈结构共振隧穿系数减小,共振峰减少.随着La2O3厚度减小,共振峰减少,共振隧穿系数却增大.随着SiO2厚度增大,HfO2,Al2O3和La2O3基栅栈结构共振隧穿系数都减小,共振峰都减少.TiN栅电极HfO2,Al2O3和La2O3基栅栈比相应多晶硅栅电极栅栈结构共振隧穿系数小很多,共振峰少.     

对称双栅高斯掺杂应变Si金属氧化物半导体场效应管的二维解析模型

基于扩散、阈值调整和离子注入等工艺过程导致器件的沟道区的掺杂分布不均匀,提出对称双栅高斯掺杂应变硅MOSFET器件,并对其相关特性进行研究。通过对沟道二维泊松方程求解建立该器件结构的表面势和阈值电压模型,分析弛豫SiGe层的Ge组分和掺杂偏差σn对表面势和阈值电压的影响。此外,还对比分析高斯掺杂对称双栅应变硅MOSFET器件和均匀掺杂对称双栅应变硅MOSFET器件的表面势和阈值电压。研究结果表明:阈值电压随应变Si膜中Ge组分的增加而降低;表面势和阈值电压随偏差σn的增加而减小;高斯掺杂对称双栅应变硅MOSFET器件和均匀掺杂对称双栅应变硅MOSFET器件的表面势和阈值电压相差较大,表明非均匀掺杂对器件表面势和阈值电压等影响较大。     

纳米MOSFET栅氧化层中吸引型陷阱的参数提取方法

通过实验在室温下同时测量纳米MOSFET器件样品漏源电流和栅电流的低频噪声, 发现一些样品器件中漏源电流不存在明显的RTS噪声, 而栅电流存在显著的RTS噪声, 而且该栅电流RTS噪声俘获时间随栅压增大而增大, 发射时间随栅压增大而减小的特点, 复合陷阱为库伦吸引型陷阱的特点. 根据栅电流RTS噪声的时常数随栅压及漏压的变化关系, 提取了吸引型氧化层陷阱的深度、在沟道中的横向位置和陷阱能级等信息.     

高k栅介质SOI应变硅肖特基源漏MOSFET漏致势垒降低效应研究

高k栅介质SOI应变硅肖特基源漏MOSFET结合了应变硅工程、高k栅介质、SOI结构和肖特基源漏四者的优点,是一种实现小尺寸MOSFET的潜力器件.通过求解二维泊松方程建立了该结构的阈值电压模型,模型中考虑了镜像力势垒和小尺寸量子化效应对源漏极的电子本征肖特基势垒高度的影响,在阈值电压模型基础上获得了漏致势垒降低模型.从文献中提取漏致势垒降低的实验数据与模型进行对比,验证了其正确性,随后在此基础上讨论分析了漏致势垒降低和各项参数的变化关系.结果表明,漏致势垒降低随应变硅层厚度的变厚、沟道掺杂浓度的提高和锗组分的增大而增大,随沟道长度的变长、栅介质介电常数的增大、电子本征肖特基势垒高度的提高和漏源电压的增大而减小.适当调节模型参数,该结构可很好的抑制漏致势垒降低效应,对高k栅介质SOI应变硅肖特基源漏MOSFET器件以及电路设计具有一定的参考价值.     

高k栅介质SOI应变硅肖特基源漏MOSFET漏致势垒降低效应研究

高k栅介质SOI应变硅肖特基源漏MOSFET结合了应变硅工程、高k栅介质、SOI结构和肖特基源漏四者的优点,是一种实现小尺寸MOSFET的潜力器件.通过求解二维泊松方程建立了该结构的阈值电压模型,模型中考虑了镜像力势垒和小尺寸量子化效应对源漏极的电子本征肖特基势垒高度的影响,在阈值电压模型基础上获得了漏致势垒降低模型.从文献中提取漏致势垒降低的实验数据与模型进行对比,验证了其正确性,随后在此基础上讨论分析了漏致势垒降低和各项参数的变化关系.结果表明,漏致势垒降低随应变硅层厚度的变厚、沟道掺杂浓度的提高和锗组分的增大而增大,随沟道长度的变长、栅介质介电常数的增大、电子本征肖特基势垒高度的提高和漏源电压的增大而减小.适当调节模型参数,该结构可很好的抑制漏致势垒降低效应,对高k栅介质SOI应变硅肖特基源漏MOSFET器件以及电路设计具有一定的参考价值.     

pMOSFET的NBTI退化机理及内在影响因素

研究了P型MOSFET的NBTI效应退化机理,以及栅氧化层电场和沟道载流子浓度对NBTI效应的影响.首先,通过电荷泵实验对NBTI应力带来的p M OSFET的界面损伤进行了测试,并利用TCAD仿真软件对测试结果进行分析,结果表明该器件的NBTI退化主要由其沟道区的界面态产生引起,而电荷注入的影响相对可以忽略.然后,通过施加衬底偏置电压的方法实现了增加器件栅氧化层电场但保持沟道载流子浓度不变的效果,进而研究了栅氧化层电场和沟道载流子浓度2个内在因素分别对NBTI退化的影响.最后,通过对比不同栅极电压和不同衬底偏置电压条件下器件的2个内在影响因素变化与NBTI退化的关系,证明了p MOSFET的NBTI效应主要由器件的栅氧化层电场决定,沟道载流子浓度对器件NBTI效应的影响可以忽略.     

Markedness and its Interpretation in Language Use

Language markedness is a common phenomenon in languages, and is reflected from hearing, vision and sense, i.e. the variation in the three aspects such as phonology, morphology and semantics. This paper focuses on the interpretation of markedness in language use following the three perspectives, i.e. pragmatic interpretation, psychological interpretation and cognitive interpretation, with an aim to define the function of markedness.     

Characterization of Ordovician carbonate reservoirs, southeastern Saskatchewan, Canada

The discovery of the prolific Ordovician Red River reservoirs in 1995 in southeastern Saskatchewan was the catalyst for extensive exploration activity which resulted in the discovery of more than 15 new Red River pools. The best yields of Red River production to date have been from dolomite reservoirs. Understanding the processes of dolomitization is, therefore, crucial for the prediction of the connectivity, spatial distribution and heterogeneity of dolomite reservoirs.The Red River reservoirs in the Midale area consist of 3～4 thin dolomitized zones, with a total thickness of about 20 m, which occur at the top of the Yeoman Formation. Two types of replacement dolomite were recognized in the Red River reservoir: dolomitized burrow infills and dolomitized host matrix. The spatial distribution of dolomite suggests that burrowing organisms played an important role in facilitating the fluid flow in the backfilled sediments. This resulted in penecontemporaneous dolomitization of burrow infills by normal seawater. The dolomite in the host matrix is interpreted as having occurred at shallow burial by evaporitic seawater during precipitation of Lake Almar anhydrite that immediately overlies the Yeoman Formation. However, the low δ18O values of dolomited burrow infills (-5.9‰～ -7.8‰, PDB) and matrix dolomites (-6.6‰～ -8.1‰, avg. -7.4‰ PDB) compared to the estimated values for the late Ordovician marine dolomite could be attributed to modification and alteration of dolomite at higher temperatures during deeper burial, which could also be responsible for its 87Sr/86Sr ratios (0.7084～0.7088) that are higher than suggested for the late Ordovician seawaters (0.7078～0.7080). The trace amounts of saddle dolomite cement in the Red River carbonates are probably related to "cannibalization" of earlier replacement dolomite during the chemical compaction.     

A computer generator for randomly layered structures

AcomputergeneratorforrandomlylayeredstructuresYUJia shun1,2,HEZhen hua2(1.TheInstituteofGeologicalandNuclearSciences,NewZealand;2.StateKeyLaboratoryofOilandGasReservoirGeologyandExploitation,ChengduUniversityofTechnology,China)Abstract:Analgorithmisintrod…     

低渗透非均质砂岩油藏启动压力梯度研究

理论推导与室内实验相结合,建立了低渗透非均质砂岩油藏启动压力梯度确定方法。首先借助油藏流场与电场相似的原理,推导了非均质砂岩油藏启动压力梯度计算公式。其次基于稳定流实验方法,建立了非均质砂岩油藏启动压力梯度测试方法。结果表明:低渗透非均质砂岩油藏的启动压力梯度确定遵循两个等效原则。平面非均质油藏的启动压力梯度等于各级渗透率段的启动压力梯度关于长度的加权平均;纵向非均质油藏的启动压力梯度等于各渗透率层的启动压力梯度关于渗透率与渗流面积乘积的加权平均。研究成果可用于有效指导低渗透非均质砂岩油藏的合理井距确定,促进该类油藏的高效开发。     

On Tragic Consciousness In The Works By Ernest Hemingway

As an American modern novelist who were famous in the literary world, Hemingway was not a person who always followed the trend but a sharp observer. At the same time, he was a tragedy maestro, he paid great attention on existence, fate and end-result. The dramatis personae's tragedy of his works was an extreme limit by all means tragedy on the meaning of fearless challenge that failed. The beauty of tragedy was not produced on the destruction of life, but now this kind of value was in the impact activity. They performed for the reader about the tragedy on challenging for the limit and the death.     

海南岛地体及其毗邻陆缘晚中生代—新生代古地磁研究和构造演化

本文叙述了对海南岛及其毗邻大陆边缘白垩纪到第四纪地层岩石进行古地磁研究的全部工作过程。通过分析岩石中剩余磁矢量的磁偏角及磁倾角的变化,提出海南岛白垩纪以来经历的构造演化模式如下:早期伴随顺时针旋转而向南迁移,后期伴随逆时针转动并向北运移。联系该地区及邻区的地质、地球物理资料,对海南岛上述的构造地体运动提出以下认识:北部湾内早期有一拉张作用,主要是该作用使湾内地壳显著伸长减薄,形成北部湾盆地。从而导致了海南岛的早期构造运动,而海南岛后期的构造运动则主要是受南海海底扩张的影响。海南地体运动规律的阐明对于了解北部湾油气盆地的形成演化有重要的理论和实际意义。     

An Index mechanism for multi-scale view in spatial databases

There are numerous geometric objects stored in the spatial databases. An importance function in a spatial database is that users can browse the geometric objects as a map efficiently. Thus the spatial database should display the geometric objects users concern about swiftly onto the display window. This process includes two operations:retrieve data from database and then draw them onto screen. Accordingly, to improve the efficiency, we should try to reduce time of both retrieving object and displaying them. The former can be achieved with the aid of spatial index such as R-tree, the latter require to simplify the objects. Simplification means that objects are shown with sufficient but not with unnecessary detail which depend on the scale of browse. So the major problem is how to retrieve data at different detail level efficiently. This paper introduces the implementation of a multi-scale index in the spatial database SISP (Spatial Information Shared Platform) which is generalized from R-tree. The difference between the generalization and the R-tree lies on two facets: One is that every node and geometric object in the generalization is assigned with a importance value which denote the importance of them, and every vertex in the objects are assigned with a importance value,too. The importance value can be use to decide which data should be retrieve from disk in a query. The other difference is that geometric objects in the generalization are divided into one or more sub-blocks, and vertexes are total ordered by their importance value. With the help of the generalized R-tree, one can easily retrieve data at different detail levels.Some experiments are performed on real-life data to evaluate the performance of solutions that separately use normal spatial index and multi-scale spatial index. The results show that the solution using multi-scale index in SISP is satisfying.     

《Chinese Science Bulletin》SUBJECT INDEX TO VOLUME 59(2014)

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Achieving Unusual States of Matter Under High Pressure

The elongation method,originally proposed by Imamura was further developed for many years in our group.As a method towards O(N)with high efficiency and high accuracy for any dimensional systems.This treatment designed for one-dimensional(ID)polymers is now available for three-dimensional(3D)systems,but geometry optimization is now possible only for 1D-systems.As an approach toward post-Hartree-Fock,it was also extended to     

Exciton Seebeck in Molecular Systems

Various applications relevant to the exciton dynamics,such as the organic solar cell,the large-area organic light-emitting diodes and the thermoelectricity,are operating under temperature gradient.The potential abnormal behavior of the exicton dynamics driven by the temperature difference may affect the efficiency and performance of the corresponding devices.In the above situations,the exciton dynamics under temperature difference is mixed with