Approaches for improving the performance of filament-type resistive switching memory

Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced.     

Approaches for improving the performance of filament-type resistive switching memory

Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling, high density, high speed and low power. However, its endurance, retention and uniformity are still imperfect. In this article, the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance, including doping, process optimization and interface engineering, are introduced.     

An overview of resistive random access memory devices

With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.     

过渡性金属氧化物薄膜阻变存储材料进展概况

随着半导体技术和集成电路的进步,器件的集成度也不断提高,器件的特征尺寸不断减小,基于电荷存储的传统非易失性随机存储器面临着物理和技术上极限的挑战。阻变式存储器（RRAM）作为新一代的存储器件,因其器件具有结构简单、制备简便、存储密度高、擦写速度快、写入电流小等优势引起了人们广泛的研究。本文就目前基于过度氧化物薄膜的RRAM研究概况,从RRAM的基本工作原理、材料体系、存储机理和器件应用所面临的各种困难等方面对RRAM进行了简要评述。     

一种阻变存储单元Hspice模型设计

提出一种满足新型双通道阻变存储器读写操作要求的Hspice模型.这种模型基于新的机理,即通过改变一块1 Mb阻变存储阵列的一个单元中2种可重配置的稳定电阻存储模式实现＂RESET态＂和＂SET态＂之间的转换,它可以通过一个模拟电流-电压特性的分立器件模型来验证.与传统阻变存储器模型相比,利用这种模型,可以用较少的器件准...     

An overview of resistive random access memory devices

With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.     

新一代存储技术:阻变存储器

阻变存储器具有存储单元结构简单、工作速度快、功耗低、有利于提高集成密度等诸多优点,受到广泛的关注。作者论述了 RRAM 的基本结构和工作原理, 并介绍了三维集成和多值存储等 RRAM 新型技术。     

Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices

Resistive Random-Access Memory (RRAM) devices are recognized as potential candidates for next-generation memory devices, due to their smallest cell size, high write/erase speed, and endurance. Particularly, the resistive switching (RS) characteristics in oxide materials have offered new opportunities for developing CMOS-compatible high-density RRAM devices. In this study, the RS behavior of HfAlO_x/ZrO₂ thin films sandwiched structure between TiN bottom electrode and Au top electrodes were investigated. It was found that Au/HfAlO_x/ZrO₂/TiN stacks were superior in terms of RS performance when compare to Au/HfAlO_x/TiN memory stacks. The devices demonstrated a good resistance ratio of high resistance state and low resistance state ～10³ for Au/HfAlO_x/TiN and ～10⁵ for Au/HfAlO_x/ZrO₂/TiN stacks, respectively. Both stacks showed good retention characteristics (>10⁴ ?s) and endurance (>10³ cycles). The experimental current-voltage characteristics fitted with different conducting mechanisms, the linear lower bias region is dominated by ohmic conductivity, whereas the non-linear higher bias region was dominated by space-charge limited current conduction mechanism.     

Improving the electrical performance of resistive switching memory using doping technology

In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM.     

基于带符号位的浮点数运算的多位宽3D RRAM设计

本文介绍了卷积神经网络（convolutional neutral network,CNN）系统中具有多位存储的三维阻变式存储器（three-dimensional resistive random-access memory,3D RRAM）的带符号位的浮点数运算. 与其他类型存储器相比,3D RRAM可以在存储器内部进行运算,且具有更高的读取速率和更低的能耗,为解决冯诺依曼架构的瓶颈问题提供新方案. 单个RRAM单元的最大和最小电阻分别达到10 GΩ和10 MΩ,可在多级电阻状态下稳定,以存储多比特位宽的数据. 测试结果表明,带符号位的浮点数的卷积运算系统的精度可以达到99.8%,测试中3D RRAM模型的峰值读取速度为0.529 MHz.      

相变存储器单元皮秒测试信号完整性研究

针对相变存储器皮秒测试系统由于矩阵开关电路分布参数以及信号通道中阻抗突变所引起的反射,严重影响了皮秒脉冲信号的完整性,使施加在相变单元上的皮秒脉冲信号严重失真,为了消除失真,改善信号完整性,从2个方面提出了解决方案：一是采用性能优良的高频继电器构成矩阵开关;二是减小反射,采取了源端阻抗匹配、负载分支端阻抗补偿、菊花链双线拓扑结构等措施,使得反射的影响减小到最小.理论分析与仿真结果表明：皮秒脉冲信号波形质量良好,满足测试要求.本测试系统为研究皮秒编程脉冲作用下相变存储器的存储机理、速度、可靠性等提供了良好的平台,也可作为电阻式随机擦写存储器单元测试系统.     

氧化钽/氧化铝薄膜的阻变特性和突触特性

通过微电子加工工艺,制备出具有ITO/TaO_x/AlO_x/Ti结构的双介质层阻变存储器.器件中引入的氧化铝介质层有效地减小了器件的运行电流,降低了高/低阻态间切换所需的功耗,并增大了高/低阻态电阻比值.研究表明,器件的高低态电阻与其切换电压均有良好的稳定性和均匀性,且器件表现出可靠的擦写性能与保持性能.进一步研究表明,器件高阻态导电受肖特基发射机制主导,低阻态导电受空间电荷限制机制主导.器件还具有连续可调的电阻渐变行为,利用反复电脉冲刺激下的器件电阻变化来表征突触的权值,可以模拟突触行为.     

Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

Metal-oxide based electronics synapse is promising for future neuromorphic computation application due to its simple structure and fab-friendly materials. HfOx resistive switching memory has been demonstrated superior performance such as high speed, low voltage, robust reliability, excellent repeatability, and so on. In this work, the HfOx synaptic device was investigated based on its resistive switching phenomenon. HfOx resistive switching device with different electrodes and dopants were fabricated. TiN/Gd:HfOx/Pt stack exhibited the best synaptic performance, including controllable multilevel ability and low training energy consumption. The training schemes for memory and forgetting were developed.     

傅里叶变换光谱仪动镜速度波动分析研究

在傅里叶变换光谱仪中,动镜速度的均匀性直接影响光谱图的质量。针对影响速度均匀性的多个因素展开研究,从运动机构自身特性、振动干扰、电路噪声等方面进行理论分析和实验测量,计算出各项因素导致的速度波动量;并讨论了降低外部干扰的方法。实验表明干扰造成的速度波动均在可接受的范围内,说明降低速度波动的工作主要在于优化控制算法。     

Amplifying quantum signals with the single-electron transistor

Transistors have continuously reduced in size and increased in switching speed since their invention in 1947. The exponential pace of transistor evolution has led to a revolution in information acquisition, processing and communication technologies. And reigning over most digital applications is a single device structure--the field-effect transistor (FET). But as device dimensions approach the nanometre scale, quantum effects become increasingly important for device operation, and conceptually new transistor structures may need to be adopted. A notable example of such a structure is the single-electron transistor, or SET. Although it is unlikely that SETs will replace FETs in conventional electronics, they should prove useful in ultra-low-noise analog applications. Moreover, because it is not affected by the same technological limitations as the FET, the SET can approach closely the quantum limit of sensitivity. It might also be a useful read-out device for a solid-state quantum computer.     

开口试验段优化设计数值模拟

摘要：
为提高某低速风洞开口试验段流场品质,采用计算流体力学方法,结合适当的边界条件,对不同设计方案进行了模拟.数值模拟结果显示：采用集气扩散段能有效提高开口试验段流场均匀性;在试验段入口前加装蜂窝器和阻尼网,对提高试验段流场均匀性和方向场、降低湍流度有重要作用.对试验段尺寸与收集器设计的进一步研究表明,延长试验段前入口区长度、增大试验段口径、改变集气扩散段位置与尺寸都能够有效提高模型区流场品质.通过比较,得出了较为合理的匹配参数,流场指标达到了设计要求.
关键词：
低速; 风洞; 开口试验段; 流场特性; 数值模拟; 优化设计
中图分类号： V 211.3
文献标志码： A     

一种改进的SET协议

为提高电子商务交易的安全性,通过对SET协议的安全技术、认证体系及交易流程等方面的分析研究,指出了SET协议存在的一些不足.通过引入电子交易认证中心,增强了SET协议交易流程的安全性;针对SET协议操作复杂,效率较低,安全性和适应性较差的缺点,提出了SET协议的分级安全控制机制;改进了信用评价模型.     

高压静电场制备微胶囊的研究

在自行研制的高压静电成囊装置上进行了制备微胶囊的试验研究。以海藻酸钠在氯化钙中固化成囊方法,进行了平针头与斜针头的成囊电压,跳火电压对比试验研究,得出平针头优于斜针头的结果;分析了电压、推进速度、液面距等参数变化对制成的微胶囊直径和均匀度的影响;对于１．５％的海藻酸钠溶液和７＾＃平针头,得到满足胰岛细胞团胶囊化要求的较佳参数组合为电压５ｋＶ,推进速度５０ｍｍ／ｈ,液面距２０ｍｍ。     

单电子晶体管/场效应管混合存储单元数值分析

基于背景电荷不敏感单电子晶体管／场效应晶体管混合存储单元利用单电子晶体管源漏电流随栅电压周期振荡的牲工作,以半经典的单电子正统理论为基础,采用计算机数值模拟的方法,分析了背景电荷不敏感单电子晶体管／常规场效应晶体管混合存储单元的工作原理和基本特性,提出了存储单元中分别以三结电容耦合单电子晶体管和电子旋转栅替代双结单电子晶体管的新结构,其主要思想是通过增加单电子器件中的串联随道结数来抑制各种噪声。模     

基于AGNES聚类算法的城市交通运行状态分析研究

为提高道路运行效率、缓解城市交通拥堵,以宿州市城区为研究对象开展了交通运行状态的分析研究。通过GPS系统获得浮动车数据,运用数理统计方法对数据进行修复和预处理;选用路段行程速度和交通流量作为评价参数,构建了路段行程速度计算模型。利用AGNES聚类算法对道路流量和平均车速进行聚类分析,以此对道路交通状态进行等级划分并确定不同等级的区间值。结果表明：宿州市主干路严重拥堵临界值为20 km/h,低于标准值（21 km/h）;同时次干路的中度和重度拥堵阈值也明显低于规范值,原因可能是车道较窄、机非混行。该研究可以为利用交通数据评估城市交通状况提供新方法,可以提高交通管理者对道路结构的认识,对城市道路的规划和设计有一定的参考价值。