新一代存储技术:阻变存储器

阻变存储器具有存储单元结构简单、工作速度快、功耗低、有利于提高集成密度等诸多优点,受到广泛的关注。作者论述了 RRAM 的基本结构和工作原理, 并介绍了三维集成和多值存储等 RRAM 新型技术。     

Improving the electrical performance of resistive switching memory using doping technology

In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM.     

Approaches for improving the performance of filament-type resistive switching memory

Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling, high density, high speed and low power. However, its endurance, retention and uniformity are still imperfect. In this article, the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance, including doping, process optimization and interface engineering, are introduced.     

An overview of the switching parameter variation of RRAM

Resistive random access memory（RRAM） has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed.     

基于非易失性存储器的存储系统技术研究进展

 非易失性存储器（NVM）主要包括两类,即适用于外存的、块寻址的闪存和适用于内存的、字节寻址的持久性内存。相比于传统磁盘,闪存具有性能高、能耗低和体积小等优势;相比于DRAM（动态随机存储器）,持久性内存如PCM（相变存储器）、RRAM（阻变存储器）等,具有非易失、存储密度高以及同等面积/内存插槽下能给多核环境的CPU 提供更多的数据等优点,这些都为存储系统的高效构建带来了巨大的机遇。然而,传统存储系统的构建方式不适用于非易失性存储器,阻碍了其优势的发挥。为此,分析了基于非易失性存储器构建存储系统的挑战,从闪存、持久性内存两个层次分别综述了它们在存储体系结构、系统软件以及分布式协议方面的变革,总结了基于非易失性存储器构建存储系统的主要研究方向。     

An overview of resistive random access memory devices

With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.     

NiO_x阻变存储器性能增强方法及相关机理研究

通过精确控制在Pt衬底上制备NiOx薄膜的工艺过程,制备出阻值窗口增大5倍以上,高低阻态稳定的TiN/NiOx/Pt结构阻变存储器.研究发现,NiOx薄膜的多晶态结晶结构和化学组分,尤其是Ni元素的化学态,是影响NiOx阻变存储器阻值窗口和稳定性的主要因素.X射线光电子能谱和X射线多晶体衍射测试结果表明,当NiOx薄膜中间隙氧或Ni2+空位增多时,Ni2+会被氧化成为Ni3+以保持电中性,Ni3+离子在材料中引入空穴导致P型氧化物NiO的漏电流增大.基于此机理,提出通过提高淀积温度、降低氧气分压的方法抑制NiOx薄膜中间隙氧或Ni2+空位的产生,降低TiN/NiOx/Pt结构阻变存储器关态漏电流,增大阻值窗口.这种基于工艺的性能增强方法,在NiOx阻变存储器实际应用中有良好前景.     

一种阻变存储单元Hspice模型设计

提出一种满足新型双通道阻变存储器读写操作要求的Hspice模型.这种模型基于新的机理,即通过改变一块1 Mb阻变存储阵列的一个单元中2种可重配置的稳定电阻存储模式实现＂RESET态＂和＂SET态＂之间的转换,它可以通过一个模拟电流-电压特性的分立器件模型来验证.与传统阻变存储器模型相比,利用这种模型,可以用较少的器件准...     

过渡性金属氧化物薄膜阻变存储材料进展概况

随着半导体技术和集成电路的进步,器件的集成度也不断提高,器件的特征尺寸不断减小,基于电荷存储的传统非易失性随机存储器面临着物理和技术上极限的挑战。阻变式存储器（RRAM）作为新一代的存储器件,因其器件具有结构简单、制备简便、存储密度高、擦写速度快、写入电流小等优势引起了人们广泛的研究。本文就目前基于过度氧化物薄膜的RRAM研究概况,从RRAM的基本工作原理、材料体系、存储机理和器件应用所面临的各种困难等方面对RRAM进行了简要评述。     

Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices

Resistive Random-Access Memory (RRAM) devices are recognized as potential candidates for next-generation memory devices, due to their smallest cell size, high write/erase speed, and endurance. Particularly, the resistive switching (RS) characteristics in oxide materials have offered new opportunities for developing CMOS-compatible high-density RRAM devices. In this study, the RS behavior of HfAlO_x/ZrO₂ thin films sandwiched structure between TiN bottom electrode and Au top electrodes were investigated. It was found that Au/HfAlO_x/ZrO₂/TiN stacks were superior in terms of RS performance when compare to Au/HfAlO_x/TiN memory stacks. The devices demonstrated a good resistance ratio of high resistance state and low resistance state ～10³ for Au/HfAlO_x/TiN and ～10⁵ for Au/HfAlO_x/ZrO₂/TiN stacks, respectively. Both stacks showed good retention characteristics (>10⁴ ?s) and endurance (>10³ cycles). The experimental current-voltage characteristics fitted with different conducting mechanisms, the linear lower bias region is dominated by ohmic conductivity, whereas the non-linear higher bias region was dominated by space-charge limited current conduction mechanism.     

An overview of resistive random access memory devices

With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.     

基于带符号位的浮点数运算的多位宽3D RRAM设计

本文介绍了卷积神经网络（convolutional neutral network,CNN）系统中具有多位存储的三维阻变式存储器（three-dimensional resistive random-access memory,3D RRAM）的带符号位的浮点数运算. 与其他类型存储器相比,3D RRAM可以在存储器内部进行运算,且具有更高的读取速率和更低的能耗,为解决冯诺依曼架构的瓶颈问题提供新方案. 单个RRAM单元的最大和最小电阻分别达到10 GΩ和10 MΩ,可在多级电阻状态下稳定,以存储多比特位宽的数据. 测试结果表明,带符号位的浮点数的卷积运算系统的精度可以达到99.8%,测试中3D RRAM模型的峰值读取速度为0.529 MHz.      

相变存储器单元皮秒测试信号完整性研究

针对相变存储器皮秒测试系统由于矩阵开关电路分布参数以及信号通道中阻抗突变所引起的反射,严重影响了皮秒脉冲信号的完整性,使施加在相变单元上的皮秒脉冲信号严重失真,为了消除失真,改善信号完整性,从2个方面提出了解决方案：一是采用性能优良的高频继电器构成矩阵开关;二是减小反射,采取了源端阻抗匹配、负载分支端阻抗补偿、菊花链双线拓扑结构等措施,使得反射的影响减小到最小.理论分析与仿真结果表明：皮秒脉冲信号波形质量良好,满足测试要求.本测试系统为研究皮秒编程脉冲作用下相变存储器的存储机理、速度、可靠性等提供了良好的平台,也可作为电阻式随机擦写存储器单元测试系统.     

扩充内存的实型虚拟数组及其在科学计算中的应用

给出建立扩充内存的实型拟数虚拟数组的方法及其若干操作，指出它们在大型科学计算中的应用．     

Cu-Al-Ni-Mn-Ti合金在不完全相变过程中的内耗行为研究

文章采用不完全相变内耗(IF)测量法研究了Cu-Al-Ni-Mn-Ti多晶形状记忆合金在热弹性马氏体相变时内耗峰与外界变量(频率、升温速率及不完全相变开始测量温度Ts)的依赖关系。实验结果表明,测量频率小于0.045Hz时,内耗峰分解成双峰(低温PL峰和高温PH峰),随Ts的降低,双峰逐渐合并;PL峰值与频率对数呈现峰形函数关系,随升温速率的增加,PL峰向高频方向移动,相变弛豫时间减小;PH峰值与频率倒数成线性关系,随升温速率的增加,线性斜率变大。     

用于提高全球定位系统定位估计速度的滤波算法

为了提高全球定位系统（GPS）高精度定位的解算速度,从原理上比较了平淡卡尔曼滤波（UKF）及其改进算法和超球面平淡卡尔曼滤波（SUKF）及其改进型等非线性滤波估计算法,提出了将SUKF的改进型算法应用于单机GPS的定位估计.实验表明：该算法能够在保证高精度定位估计的前提下提高运算速度,有效解决GPS软件接收机中高精度定位输出的实时性问题.     

Cu-Zn-Al合金形状记忆效应的机理分析

在相变过程中产生的热弹性马氏体所具有的晶体学可逆性和其形成过程中的自协作效应与取向效应是形状记忆合金产生形状记忆的根本原因，据此对Cu—Zn—A1形状记忆合金观测结果给出了解释．中还阐明了发生热弹性马氏体相变的驱动力来自母相与新相间的自由能差，热弹性马氏体的形状、大小可由相变时的过冷度控制．     

视频图像采集及网络传输系统的设计

为满足特殊行业对高分辨率视频监控的需求,设计一种基于FPGA(Field Programmable Gate Array)的视频图像采集及网络传输系统.采用IIC (Intel-Integrated Circuit)协议,利用FPGA实现对图像传感器寄存器的配置,图像传感器输出分辨率为1024×768、帧率为8 Hz、...     

Flexible free-standing polyaniline/poly(vinyl alcohol) composite electrode with good capacitance performance and shape memory behavior

The increasing demand for portable and flexible energy storage devices drives the development of flexible electrodes and electrolytes. The aim of this work is to fabricate the flexible free-standing polyaniline/poly (vinyl alcohol) (PANI/PVA) composite electrode with good capacitance performance and shape memory behavior. The electrodes were fabricated by chemical oxidation polymerization of aniline in porous PVA (P-PVA) films. The morphology, electrochemical and mechanical properties of PANI/P-PVA electrodes were studied by scanning electron microscope, cyclic voltammetry, galvanostatic charge-discharge, and tensile test etc. The results revealed that the flexible PANI/P-PVA-1 electrode had good specific capacitance of 173.86 ​mF ​cm⁻² at 1 ​mA ​cm⁻², with the capacitance retention of 70.16% after 4000 charge-discharge cycles. Besides, it had excellent heat-induced shape memory effect. The fixed shape could completely recover to its original shape within 10 ​s at 80 ​°C, which is above the glass transition temperature (75.89 ​°C) of PANI/P-PVA-1. The comparatively tensile strength (2.86 ​MPa) and high elongation at break (315.72%) indicated its outstanding flexibility. Up to 200 times folding had no effect on the electrochemical properties. The free-standing polymer electrodes with excellent comprehensive performance provide potential applications in flexible energy-storage devices, electronic encapsulation and high stretchable electric devices etc.     

金属有机框架衍生单原子纳米酶的合成、表征与生物应用研究进展

单原子催化剂（SACs）具有高原子利用效率以及高催化活性，在各种催化体系中均表现出优异的性能.其原子级别的活性位点与天然的金属蛋白酶类似，因此单原子纳米酶（SAzymes）的概念也应运而生.而金属有机框架（MOF）由于其具有高孔隙率的特点，可以作为合成SAzymes的前驱体.该文总结了使用MOF前体/模板构建SACs的合成策略，以及SAzymes的生物应用，提出了基于MOF衍生的SAzymes的发展挑战和前景.