SURFACE SPIN WAVES FORSEMI—INFINITE MAGNETIC SEMICONDUCTOR WITH A MAGNETIC IMPURITY LAYER IN THE NARROW—BAND LTMIT

The s-d (or s-f) Heisenberg interaction modal is used to investigate the localized surface spin waves in semi-infinite magnetic semiconductor with a single impurity layer in the narrow-band limit. The dispersion relations of localized surface spin wave (LSSW) excitations are obtained by use of Green‘s function theory and the transfer matrix method, The characteristic results in some particular cases are discussed.     

TRANSFER-MATRIX METHOD FOR SURFACE SPIN WAVES IN A SEMI-INFINITE MAGNETIC SUPERLATTICE WITH A SINGLE-ION ANISOTROPY

Surface spin waves in a semi-infinite magnetic super lattice with a single-ion uniaxial anisotropy are investigated through the transfer matrix method. The dispersion equations of surface spin waves are obtained. We find that not all the magnetic superlattice structures can excite the surface spin waves, and that the anisottropy term need not be favorable to the excitation of surface spin waves, but surely influences the values of the energy of the excited surface spin waves.     

基于CoFe／Pd的自旋阀底电极中增强的垂直磁各向异性

采用磁控溅射方法制备了Pd（3nm）／CoFe（0．8nm）／纳米氧化层／CoFe（fnm）／Cu（4nm）／Pd（5nm）自旋阀底电极薄膜,并用振动样品磁强计对样品的磁性能进行了测量．研究结果表明：纳米氧化层的引入可以使电极薄膜的磁各向异性在退火后从面内转到垂直膜面方向,并且这种强烈的垂直磁各向异性在CoFe有效厚度为2nm时仍能保持．这种具有非多层膜结构、铁磁层较厚、热稳定性较高的底电极有利于基于自旋转移矩的垂直磁各向异性全金属赝自旋阀的发展．     

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.     

杂质对ZnO/Ni反担载催化剂表面H化学吸附的影响

本文在紧束缚近似下，利用格林函数方法和ＥＳ化学吸附理论研究杂质对Ｈ在反担载催化剂ＺｎＯ／Ｎｉ表面化学吸附的影响。研究结果表明，微扰Δε＜０的杂质削弱化学吸附，Δε＞０的杂质增强化学吸附，并且杂质位于载体第一层时对化学吸附影响最大。     

自旋分别为1/2及3/2的双层铁磁薄膜磁性分析

采用变分累积展开的方法．考察了由自旋分别为1／2及3／2的两个铁磁单层膜组成的双层膜系统的自发磁化强度随温度的变化情况，特别是在自旋为3／2单层的单粒子各向异性对这种变化的影响，获得了这种变化的特征行为．     

单轴异性对氮化物半导体中浅杂质态的影响

利用变分法研究纤锌矿结构氮化物半导体材料中的浅杂质态问题.采用London模型,用变分法计算浅杂质态的结合能,研究材料的单轴异性对浅杂质态的结合能的影响.对G aN,A lN和InN三种材料进行数值计算,给出了结合能随异性角(总动量与主轴之间的夹角)的变化关系,结果表明结构异性对结合能的影响显著.     

具有单离子各向异性场的键稀疏混合横向伊辛自旋系统的相图(英文)

本文在有效场理论的框架内研究了具有单离子各向异性场的键稀疏混合横向伊辛自旋系统的相图。重点给出了蜂窝晶格的相图。如果负单离子各向异性场参数不大且横场值较小,我们观察到在目前的系统中重入相变可能发生。横场对重入相变行为的影响在本文中也进行了讨论。     

Spin-engineering magnetic media

The explosion in demand for increased data-storage density is driving the exploration of new magnetic media. Here we describe a new type of magnetic medium in which the spin configurations are engineered in chemically homogeneous magnetic films: regularly arranged in-plane and out-of-plane spin configurations are defined by altering the magnetic anisotropy. These spin-engineered media not only maintain the surface planarity but also the homogeneity of the magnetic materials, and our method is likely to find immediate application on account of its simplicity and ease of integration.     

各向异性铁磁双层薄膜中的界面自旋波及存在条件

研究了各向异性铁磁双层薄膜中的界面自旋波的本征值问题，获得了界面自旋波存在的充要条件。数值计算结果表明，临界值ＪＡＢ＾Ｃ随各向异性参数的比值增大而单调增加，且当链长（格点数）为十几个格点时变为耦合半无限自旋链的结果。     

磁性杂质对量子点内电子态密度Kondo峰的影响

讨论了一个耦合于量子点的磁性杂质,当两边是铁磁性导线时量子点上电子的态密度Kondo峰的变化情况。用格林函数运动方程的方法和特定的自洽方法得到了态密度的解析表达式。杂质与量子点上电子的耦合使得原本简并的电子能级分裂。数值计算结果表明当两边的铁磁导线极化反平行时,态密度的Kondo峰几乎不随着磁性杂质方位角的变化而变化。当极化平行时,会出现3个Kondo峰,并且峰之间的间隔随着杂质的方位角的增大而增大。如果选取适当极化率的铁磁导线,由导线的铁磁性引起的Kondo峰的分裂可以被杂质的耦合作用抵?消掉。?     

A-B-A系统界面各相异性与声学型界面自旋波存在条件

计入外磁场、铁磁和反铁磁层间耦合、体和界面各向异性后,研究了Ａ－Ｂ－Ａ三链系统中物声学型界面自旋波及其存在条件,结果发现,在此系统中,存在奇、偶两种不同宇称的声学型界面自旋波,在没的界面各向异性条件,这两种声学型界面自旋波解的个数分别在０￣２之间变化。     

Dynamical Suppression of Magnetic Tunneling

Introduction　　Macroscopicquantumphenomena(MQP)havebeeninvestigatedintensivelyformanyyears.AccordingtothepioneeringworksofCaldeiraandLeggett[1,2],ifthedissipationinteractionwiththeenvironmentwassmallenough,quantumtunnelingcouldtakeplaceonthemacroscopicscale.Overthelastfifteenyears,alotofexperimentalandtheoreticalworkhavebeendevotedtothisfield.Recently,owingmainlytothedevelopmentsoftechnologyinnanostructurephysics,manystudieshavefocusedonthenanometer-scalemagneticsystemswhichexhibitmacroscop…     

纤锌矿氮化物半导体椭球形量子点杂质态

考虑纤锌矿结构氮化物半导体材料的单轴异性后,在有效质量近似下,利用变分法研究了无限高势垒近似下GaN,AlN和InN椭球形量子点中的杂质态,导出了杂质态结合能随量子点半径和椭球率变化的关系.数值计算结果发现,杂质态结合能随着量子点半径和椭球率的增加而减小.     

自旋轨道耦合系统中的电流导致的自旋极化

研究了二维Rashba自旋轨道耦合电子系统中的电流导致的自旋极化。对于δ函数形式的短程电子杂质散射,得出了和文献一致的结果。在远处杂质散射下,自旋极化将会强烈地依赖于电子密度,这个结果完全不同于短程势散射的情况。并且随着杂质距离的变大,自旋极化增强。在这种散射势的情况下,不再能够通过测量纵向电导和磁化强度的方法来确定样品的 Rashba 自旋轨道耦合系数。     

HDDR各向异性NdFeB磁粉的粒度效应和表面缺陷层模型

研究了ＨＤＤＲ各向异性ＮｄＦｅＢ磁粉的粒度效应,发现尽管其粒度效应较低而适合制备粘结磁体,但比快淬ＮｄＦｅＢ磁粉的粒度效应显著。在此基础上提出了表面缺陷层模型,即把磁粉颗粒从外表面到内成表面缺限层、过渡层和本体部分,磁粉磁性是各自磁性的叠加。     

半导体外延掺杂的深度分布——"修正的"余误差分布

在制造半导体器件的外延工艺中,外延生长时通常要掺入杂质.如果杂质的扩散系数很小,杂质在外延层中的深度分布是均匀的;如果杂质的扩散系数较大,半导体在外延生长过程中,杂质还有较明显的扩散,也会扩散到衬底中去.杂质浓度随深度分布不仅和杂质的扩散系数有关,还和外延生长速度及外延生长时间有关.从理论上推导出掺杂外延生长时杂质浓度深度分布表达式——"修正的"余误差分布;并根据该表达式绘出不同扩散系数和不同外延生长条件下的杂质浓度深度分布图;讨论了由杂质浓度深度分布确定扩散系数的实验条件.     

镓铝扩散产生表面层缺陷的机理及处理措施

针对铝乳胶源涂布与气相Ｃａ杂质相结合的受主双质掺杂技术，分析了产生表面层缺陷的原因，并提出了减少缺陷的措施。     

杂质散射对具有Rashba自旋轨道耦合2维电子系统的自旋霍耳效应影响

在具有Rashba自旋轨道耦合的2维电子系统中,外加电场会产生一个垂直于电场的自旋霍耳电流,这个效应称之为自旋霍耳效应.该文主要分析的是在考虑杂质散射的情况下,通过对具有Rashba自旋轨道耦合的2维电子系统的哈密顿量的求解,得到它在z方向的自旋分量是收敛的,同时得到了自旋霍耳电导率不普适.这不同于S inova等人所提出的在具有Rashba自旋轨道耦合的2维电子系统自旋霍耳电导率是普适的结论.     

单粒子各向异性S=1 Heisenberg反铁磁链的热力学性质

在自洽的自旋波理论框架下，探讨了单粒子各向异性Ｓ＝１Ｈｅｉｓｅｎｂｅｒｇ反铁磁链的热力学能，能隙及关联长度等热力学性质，并与数值模拟和实验进行了比较。