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杂质对ZnO/Ni反担载催化剂表面H化学吸附的影响
引用本文:张莹,籍远明.杂质对ZnO/Ni反担载催化剂表面H化学吸附的影响[J].河南师范大学学报(自然科学版),1997,25(4):36-39.
作者姓名:张莹  籍远明
作者单位:河南师范大学物理系
摘    要:本文在紧束缚近似下,利用格林函数方法和ES化学吸附理论研究杂质对H在反担载催化剂ZnO/Ni表面化学吸附的影响。研究结果表明,微扰Δε<0的杂质削弱化学吸附,Δε>0的杂质增强化学吸附,并且杂质位于载体第一层时对化学吸附影响最大。

关 键 词:紧束缚近似  格林函数方法  化学吸附能

Impurity Effects on H Chemisorption with ZnO/Ni System
Zhang Ying\ Chen Jian \ Ji Yuanming.Impurity Effects on H Chemisorption with ZnO/Ni System[J].Journal of Henan Normal University(Natural Science),1997,25(4):36-39.
Authors:Zhang Ying\ Chen Jian \ Ji Yuanming
Institution:Zhang Ying\ Chen Jian \ Ji Yuanming **
Abstract:One dimentional tight binding approximation and Green function method are used to investigate the influence of a substitutional impurity atom over H chemisorption which is on the surface of ZnO/Ni system.The metal Ni is represented by a semi infinite chain of orbitals,while the semiconductor ZnO is characterized by a linear chain of alternating s and p orbitals.The results are as following: The impurity with effective perturbation potentialΔε>0 may decrease the H chemisorption,the impurity with Δε<0 can strengthen the H chemisorption and when on the first layer of ZnO/Ni,the impurity has the strongest effect on H chemisorption.
Keywords:tight  binding approximation  Green function method  chemisorption energy
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