| 单轴异性对氮化物半导体中浅杂质态的影响 |
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| 引用本文： | 薛亚光,闫祖威.单轴异性对氮化物半导体中浅杂质态的影响[J].内蒙古大学学报(自然科学版),2006,37(6):632-635. |
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| 作者姓名： | 薛亚光 闫祖威 |
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| 作者单位： | 1. 内蒙古大学理工学院物理系,呼和浩特,010021
2. 内蒙古大学理工学院物理系,呼和浩特,010021;内蒙古农业大学理学院,呼和浩特,010018 |
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| 摘 要： | 利用变分法研究纤锌矿结构氮化物半导体材料中的浅杂质态问题.采用London模型,用变分法计算浅杂质态的结合能,研究材料的单轴异性对浅杂质态的结合能的影响.对G aN,A lN和InN三种材料进行数值计算,给出了结合能随异性角(总动量与主轴之间的夹角)的变化关系,结果表明结构异性对结合能的影响显著.
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| 关 键 词： | 氮化物半导体 浅杂质态 结合能 单轴异性 |
| 文章编号： | 1000-1638(2006)06-0632-04 |
| 收稿时间： | 2006-05-10 |
| 修稿时间： | 2006-07-25 |
Influence of Uniaxial Anisotropy on Binding Energies of Shallow Impurity States in Wurtzite Nitrides |
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| XUE Ya-guang,YAN Zu-wei.Influence of Uniaxial Anisotropy on Binding Energies of Shallow Impurity States in Wurtzite Nitrides[J].Acta Scientiarum Naturalium Universitatis Neimongol,2006,37(6):632-635. |
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| Authors: | XUE Ya-guang YAN Zu-wei |
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| Institution: | 1. Depa rtment of Physics, College of Sciences a nd Technology, Inner Mongolia University, Hohhot 010021 ,China; 2. College of Science, Inner Mongolia Agricultural University, Hohhot 010018 ,China |
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| Abstract: | The shallow impurity states in wurtzite nitrides are studied by a variational method.The binding energies of shallow impurity states in wurtzite nitrides are calculated based on the London model by considering the uniaxial anisotropy.The numerical calculation is performed for GaN,AlN and InN.The binding energies as a function of anisotropic angle(the angle between the total momentum and the principal axis)is obtained.It is shown that the effect of anisotropy on the binding energy is obvious. |
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| Keywords: | nitrides shallow impurity state binding energy uniaxial anisotropy |
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