| 纤锌矿氮化物半导体椭球形量子点杂质态 |
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| 引用本文： | 石磊,闫祖威.纤锌矿氮化物半导体椭球形量子点杂质态[J].内蒙古大学学报(自然科学版),2009,40(2). |
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| 作者姓名： | 石磊 闫祖威 |
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| 作者单位： | 1. 内蒙古大学物理科学与技术学院,呼和浩特,010021
2. 内蒙古农业大学理学院,呼和浩特,010018 |
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| 基金项目： | 国家自然科学基金，教育部科学技术研究重点项目 |
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| 摘 要： | 考虑纤锌矿结构氮化物半导体材料的单轴异性后,在有效质量近似下,利用变分法研究了无限高势垒近似下GaN,AlN和InN椭球形量子点中的杂质态,导出了杂质态结合能随量子点半径和椭球率变化的关系.数值计算结果发现,杂质态结合能随着量子点半径和椭球率的增加而减小.
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| 关 键 词： | 杂质态 结合能 单轴异性 |
Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots |
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| SHI Lei,YAN Zu-wei.Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots[J].Acta Scientiarum Naturalium Universitatis Neimongol,2009,40(2). |
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| Authors: | SHI Lei YAN Zu-wei |
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| Institution: | 1.School of Physical Science and Technology;Inner Mongolia University;Hohhot 010021;China;2.College of Science;Inner Mongolia Agricultural University;Hohhot 010018;China |
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| Abstract: | Within the effective mass approximation,impurity states in GaN,AlN and InN wurtzite nitride ellipsoidal infinite-potential quantum dots are investigated with a variational method by considering the influence of uniaxial anisotropy.The binding energies of impurity states are calculated as a function of the quantum dot radius and ellipticity.Numerical results show that,the binding energy of impurity states decreases with increasing quantum dot radius and ellipticity. |
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| Keywords: | impurity state binding energy uniaxial anisotropy |
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