肮频二极管掺金,掺铂和12MeV电子辐照性能的研究

对高频二极管掺金，掺铂和１２ＭｅＶ电子辐照试验结果进行了对比分析研究，实验研究结果表明：掺金器件有最佳的ＶＦ－ＴＲＲ折裹曲线，但高温特性却最差掺铂器件有最佳的高温特性，但ＶＦ－ＴＲＲ折衷曲线却最差；全面衡量器件各参数，１２ＭｅＶ电子辐照最有利于器件参数的最佳化，据化，提出了不同类型的高频二极管少子寿命控制技术的优选方案。     

金铂双掺杂快恢复二极管特性的研究

掺金 (Au)和掺铂 (Pt)技术已被广泛用于减小硅中少数载流子的寿命 .掺金器件的VF～trr特性优于掺铂器件 ,但高温反向电流远大于掺铂器件 .作者通过金铂双掺杂技术 ,得到了VF～trr特性和高温反向漏电流介于单独掺金和掺铂快恢复二极管之间的结果 ;并通过全面衡量器件各参数认为 ,金铂双掺杂技术有利于器件参数的优化 .     

二极管电子辐射效应的研究

利用电子辐照小功率二极管的研究结果表明，电子辐射可引起硅中少子寿命降低，二极管正向压降增加和零偏电容减少；还可引入三个缺陷能级：氧空位Ｅ１（Ｅｃ－０．１７ｅＶ）、双空位Ｅ２（Ｅｃ－０．２３ｅＶ）和Ｅ３（Ｅｃ－０．３９ｅＶ）。讨论了小功率二极管辐照后反恢时间下正向压降的兼容性。认为减少功率二极管的基区宽度是改善兼容性的有效方法。     

电子和质子辐照Tc氧化物高温超导体的不同特性

用２００ＫｅＶ质子，４００ＫｅＶ和８ＭｅＶ电子分别辐照ＹＢａＣｕＯ高Ｔｃ超导材料，其影响是不同的．质子注入使零电阻温度从８６．７Ｋ提高到８９．８Ｋ，而剂量为２．２５×１０１４电子／ｃｍ２的８ＭｅＶ的电子辐照却使超导体的零电阴温度下降３Ｋ左右．当电子辐照剂量为１．３５×１０１５ｅ／ｃｍ２时，超导体变成绝缘体．用高分解电镜对４００ｋｅＶ的电子辐照分况进行实地在线研究，发现当剂量到１．０×１０２６ｅ－／ｃｍ２时，氧化物超导体中的品相出现非品化，而其原来为非品区域处处出现有序化．     

电子辐照NTD FZ Si等温退火特性

本文报导了关于高阻Ｎ型区熔ＮＴＤ－Ｓｉ－Ｐ＾＋Ｎ结二极管经电子辐照后的等温退火特性，获得５个缺陷能级：Ｅ１＝０．１６ｅＶ，Ｅ２＝０。．２７ｅＶ，Ｅ３＝０．３１ｅＶ，Ｅ４＝０．３７ｅＶ６和Ｅ５＝０．４２ｅＶ，结果表明Ｅ３和Ｒ４有比其它３个能极更好的热稳定性。     

AN ACHROMATIC MAGNETIC DEFLECTION SYSTEM WITH THREE-SECTOR MAGNET

描述了一个三扇形磁铁消色差磁偏转系统。该系统由三个紧密相连具有不同气隙的扇形磁铁组成，并具有一对称平面。用矩阵法分析了该系统的特性，得到了一般和最佳消色差条件。该系统结构紧凑，传输特性好，工作能区宽。１２ＭｅＶ工业辐照电子直线加速器２７０°偏转系统的测量结果显示了良好的光学特性     

10MeV电子辐照GaAs Raman谱的研究

研究了１０ＭｅＶ电子辐照掺ＳｅＧａＡｓ外延层和半绝缘（ＳＩ）ＧａＡｓ的Ｒａｍａｎ测量．观察了几个相关缺陷的特征,认为２２０ｃｍ－１峰与Ａｓｉ相联系,这至少部份和ＥＬ２及ＥＬ１２缺陷有关．对掺Ｓｅ样品的２０４ｃｍ－１和２５８ｃｍ－１峰,可能和小砷簇的振动模式有关．而７７ｃｍ－１和１８５ｃｍ－１峰则应是由无序活化Ｒａｍａｎ散射引起的．辐照结果显示,小砷簇和无序态随辐照剂量增加而增加．本文还将讨论其它的有关的Ｒａｍａｎ峰     

利用电子顺磁共振对掺Mn刚玉晶体中子辐照变价的研究

测量并对比了掺Ｍｎ刚玉晶体在中子辐照及退火处理前后的电子顺磁共振（ＥＰＲ）谱，结合紫外－可见光吸收谱的结果，发现Ｍｎ２＋和Ｍｎ４＋的浓度降低，而Ｍｎ３＋浓度增加，虽然Ｍｎ离子的掺杂浓度并无改变，但其价态由于中子辐照而引起了改变．实验结果还表明，中子辐照可在晶体内形成Ｍｎ２＋与Ｆ－心的复合体，但退火后则有一部分转化为Ｍｎ２＋与Ｆ心的复合体．     

HEMT材料的电子辐射效应

用能量为１～１．８ＭｅＶ、注量为１０￣（１３）～１０￣（１０）／ｃｍ￣２的电子，对ＨＥＭＴ（高电子迁移率晶体管）材料进行辐照，得到了材料结构中的２维电子气（２ＤＥＧ）的电输运性质随辐照电子能量和注量的变化关系，井进行了讨论．还将该结果与电子辐照Ｐ－ＨＥＭＴ和ＬＴ－ＨＥＭＴ材料的结果进行了比较，对异质结界面的辐照效应进行了分析。     

高温对RSPAl－Fe－V－Si系合金组织与性能的影响

采用多级快速凝固制粉装置制各ＲＳＰＡｌ－Ｆｅ－Ｖ－ＳｉＦＶＳ０８１２合金粉，运用ＴＥＭ，ＸＲＤ对合金冷轧板高温稳定性进行了研究．结果表明；在５５０℃下长时间退火，合金仍保持相当高的硬度；在６００℃下退火１２ｈ，可观察到再结晶发生，并伴随有｛１１０｝再结晶织构出现．合金中大量的第２相粒子延缓了再结晶的发生，提高了组织与性能的稳定性     

基于少子寿命测量研究晶硅电子态缺陷

基于瞬态微波光电导少子寿命测试仪和MATLAB编程研究了确定硅片的复合中心浓度和陷阱中心浓度的方法。利用瞬态微波光电导少子寿命测试仪,我们测量了硅片的少子寿命及微波光电导瞬态电压信号随时间的变化特性。根据已知的注入水平和相关复合参数,建立少子寿命与复合中心浓度的关系,我们得到硅片中的复合中心浓度。利用瞬态电压信号的时间变化特性与非平衡载流子浓度的时间衰减特性的关系,我们得到非平衡载流子浓度随时间的衰减曲线。结合非平衡载流子时间衰减特性曲线和陷阱模型表达式,利用MATLAB软件进行数值拟合得到了硅片的陷阱中心浓度。     

从Si到快速热氮化SiO_2膜的雪崩热电子注入

本文报道了MIS电容从Si到快速热氮化SiO_2膜的雪崩注入电流、平带电压漂移和雪崩注入技术所使用的驱动信号参数三者关系的实验结果,同时结合电子陷阱、氮化工艺、界面陷阱和少子寿命等因素对实验结果作了解释和讨论。     

In1-xGaxN/Si异质结太阳能电池的光伏特性研究

通过器件模拟对n-In1-xGaxN/p-Si异质结的光伏特性进行了研究,并与c-Si同质结薄膜电池的性能作了比较。研究表明:在AM1.5的光照条件下,n-IGN/p-Si异质结在最佳的电池设计、最佳的材料和最佳的操作参数条件下获得的电池效率达到了27%。电池效率受到薄膜质量的强烈影响,从电子亲和势、多数载流子的迁移率、少数载流子的寿命、薄膜厚度以及掺杂水平的变化可以得到说明。     

n-type colloidal semiconductor nanocrystals

Colloidal semiconductor nanocrystals combine the physical and chemical properties of molecules with the optoelectronic properties of semiconductors. Their colour is highly controllable, a direct consequence of quantum confinement on the electronic states. Such nanocrystals are a form of 'artificial atoms' (ref. 4) that may find applications in optoelectronic systems such as light-emitting diodes and photovoltaic cells, or as components of future nanoelectronic devices. The ability to control the electron occupation (especially in n-type or p-type nanocrystals) is important for tailoring the electrical and optical properties, and should lead to a wider range of practical devices. But conventional doping by introducing impurity atoms has been unsuccessful so far: impurities tend to be expelled from the small crystalline cores (as observed for magnetic impurities), and thermal ionization of the impurities (which provides free carriers) is hindered by strong confinement. Here we report the fabrication of n-type nanocrystals using an electron transfer approach commonly employed in the field of conducting organic polymers. We find that semiconductor nanocrystals prepared as colloids can be made n-type, with electrons in quantum confined states.     

Improving the performance of doped pi-conjugated polymers for use in organic light-emitting diodes

Organic light-emitting diodes (OLEDs) represent a promising technology for large, flexible, lightweight, flat-panel displays. Such devices consist of one or several semiconducting organic layer(s) sandwiched between two electrodes. When an electric field is applied, electrons are injected by the cathode into the lowest unoccupied molecular orbital of the adjacent molecules (simultaneously, holes are injected by the anode into the highest occupied molecular orbital). The two types of carriers migrate towards each other and a fraction of them recombine to form excitons, some of which decay radiatively to the ground state by spontaneous emission. Doped pi-conjugated polymer layers improve the injection of holes in OLED devices; this is thought to result from the more favourable work function of these injection layers compared with the more commonly used layer material (indium tin oxide). Here we demonstrate that by increasing the doping level of such polymers, the barrier to hole injection can be continuously reduced. The use of combinatorial devices allows us to quickly screen for the optimum doping level. We apply this concept in OLED devices with hole-limited electroluminescence (such as polyfluorene-based systems), finding that it is possible to significantly reduce the operating voltage while improving the light output and efficiency.     

提高高频晶闸管di/dt耐量的研究

为提高高频晶闸管的动态指标和高频性能，通过实验分析和理论推导，研究了工艺参数和设计参数对高频晶闸管ｄｉ／ｄｔ耐量的影响。实验结果表明：较低的一扩浓度，较薄的基区宽度以及用高能电子辐照控制少子寿命，有利于提高ｄｉ／ｄｔ耐量。通过对相同工艺三种不同阴极图形的８００Ａ、１０ｋＨｚ高频晶闸管ｄｉ／ｄｔ的研究，论证了合理确定辅助晶闸管面积对提高ｄｉ／ｄｔ的重要性，并指出，在大面积高频晶闸管中设计二级放大门极，有利于提高ｄｉ／ｄｔ耐量。     

Plasma devices to guide and collimate a high density of MeV electrons

The development of ultra-intense lasers has facilitated new studies in laboratory astrophysics and high-density nuclear science, including laser fusion. Such research relies on the efficient generation of enormous numbers of high-energy charged particles. For example, laser-matter interactions at petawatt (10(15) W) power levels can create pulses of MeV electrons with current densities as large as 10(12) A cm(-2). However, the divergence of these particle beams usually reduces the current density to a few times 10(6) A cm(-2) at distances of the order of centimetres from the source. The invention of devices that can direct such intense, pulsed energetic beams will revolutionize their applications. Here we report high-conductivity devices consisting of transient plasmas that increase the energy density of MeV electrons generated in laser-matter interactions by more than one order of magnitude. A plasma fibre created on a hollow-cone target guides and collimates electrons in a manner akin to the control of light by an optical fibre and collimator. Such plasma devices hold promise for applications using high energy-density particles and should trigger growth in charged particle optics.     

n/n~ GaAs LPE层中L_P-N_D关系的测量和分析

本文采用等光强表面光伏法对掺锡的n/n~ GaAS液相外延层空穴扩散长度Lp和施主浓度N_D。关系作了测量,求得可供器件设计参考的经验公式.把Lp换算为空穴寿命τ_p后,用公式τ_p~(-1)=τ_(HSP)~(-1) Brn Cn n~2拟合了τ_p和电子浓度n的关系曲线,算出由带隙内复合中心所决定的少子寿命τHSR、带间辐射复合系数Br和带间俄歇复合系数Cn。     

Defects in NTD InP probed by positron annihilation spectroscopy

Two samples of high purity InP extracted from the same wafer were examined by positron annihilation spectrum analysis after having been, processed by means of thermal Neutron Transmutation Doping (NTD). Compared with the as grown sample with an average positron lifetime of 246 ps at 300 K, the high dose doped one has an average lifetime of 251 ps and the lower dose doped one 248 ps measured under the same condition, indicating that some defects have been introduced in the NTD process. Annealing experimental results show a steady decrease in the average lifetime with increasing annealing temperature up to 550°C. And a peak in lifetime curve around 500°C was observed which may be attributed to defects related structure conversion. Temperature experiments conducted on the low dose doped sample from 150K to 290 K suggest the existence of vacancy-impurity complex which have given rise to an abnormal reduction of average lifetime with increasing temperature. Also a n-type InP sample (A61) was irradiated with thermal neutrons in another reactor and the lifetime results display an increase of 15 ps. Furthermore, to study epithermal neutron irradiation effects on InP, measurements were performed on an n-type InP sample (N119) along with one p-type sample (P118) after having been irradiated with high fluence of epithermal neutrons. The former has an average lifetime of 262 ps and the latter 247 ps after irradiation. The results prove that on some occassion epithermal neutrons can produce sizable defects in InP. Foundation item: Supported by the Science Foundation of Hubei Province (203980532) Biography: WEN Xiang-e (1976-), male, Master candidate, Research direction; majar research interest is defects in semiconductor materials using positron annihilation spectroscopy.     

Molecular control over Au/GaAs diodes

The use of molecules to control electron transport is an interesting possibility, not least because of the anticipated role of molecules in future electronic devices. But physical implementations using discrete molecules are neither conceptually simple nor technically straightforward (difficulties arise in connecting the molecules to the macroscopic environment). But the use of molecules in electronic devices is not limited to single molecules, molecular wires or bulk material. Here we demonstrate that molecules can control the electrical characteristics of conventional metal-semiconductor junctions, apparently without the need for electrons to be transferred onto and through the molecules. We modify diodes by adsorbing small molecules onto single crystals of n-type GaAs semiconductor. Gold contacts were deposited onto the modified surface, using a 'soft' method to avoid damaging the molecules. By using a series of multifunctional molecules whose dipole is varied systematically, we produce diodes with an effective barrier height that is tuned by the molecule's dipole moment. These barrier heights correlate well with the change in work function of the GaAs surface after molecular modification. This behaviour is consistent with that of unmodified metal-semiconductor diodes, in which the barrier height can depend on the metal's work function.