Effect of additive boron on type-Ib gem diamond single crystals synthesized under HPHT

The boron-doped type-Ib gem diamond crystals were synthesized successfully by adding amorphous boron into a system of graphite and Kovar catalyst under high pressure and high temperature (HPHT).The effect of additive boron on type-Ib gem diamond was extensively studied including the growth characteristic,morphology and nitrogen concentration.The synthesized boron-doped type-Ib gem diamond crystals were characterized by optical microscope (OM),scanning electron microscope (SEM) and infrared spectrometer (IR)...     

Mechanism of diamond-to-graphite transformation at diamond-stable conditions

The diamond-to-graphite transformation at diamond-stable conditions is studied by temperature gradient method （TGM） under high pressure and high temperature （HPHT）, although it is unreasonable from the view of thermodynamic considerations. It is found that, at diamond-stable conditions, for example, at 5.5 GPa and 1550 K, with fine diamond grits as carbon source and NiMnCo alloy as metal solvent assisted, not only large diamond crystals, but metastable regrown graphite crystals would be grown by layer growth mechanism, and the abundance of carbon source in the higher temperature region is indispensable for the presence of metastable regrown graphite crystals. From this transformation, it is concluded that, with metal solvent assisted, although the mechanism of crystal growth could be understood by the macro-mechanism of solubility difference between diamond and graphite in metal solvents, from the point of micro-mechanism, the minimum growth units for diamond or graphite crystals should be at atomic level and unrelated to the kinds of carbon source （diamond or graphite）, which could be accumulated free-selectively on the graphite with Sp2Tr or diamond crystals with sp3 bond structure.     

电镀晶种法合成金刚石单晶实验研究

目的寻求一种合成金刚石大单晶的有效方法。方法采用在金刚石单晶上面电镀一层金属镍膜作为触媒,镀有镍膜的金刚石晶种被规则地放在石墨片上预先刻好的洞中,每两个洞之间保持相等的间距,然后与其他石墨片交替组装在高温高压下进行实验合成。结果实验结果表明,在合成压力、温度和时间分别~5.8 GPa、~1 460℃和14 min的条件下,合成后的单晶尺寸约是原晶种的3倍。与传统的合成工艺相比较,合成后的金刚石单晶具有较好的形貌与质量。结论采用电镀晶种法合成对高品级金刚石大单晶的合成具有一定参考意义。     

铁基粉末触媒合成金刚石

本文利用六种铁基粉末触媒（FeNiNa,n=0,1,2,3,d,5X。代表Fe在触媒中的含量,Xn〉xn-1）在国产六面顶压机上进行了金刚石单晶的合成实验,研究了高温高压条件下（～6GPa,～1600℃）,铁基粉末触媒随铁含量的改变,石墨碳—铁基触媒体系合成金刚石条件的变化规律以及金刚石单晶的生长特性,利用穆斯堡尔谱对金刚石中铁元素形成的包裹体进行了检测．结果表明,随着铁基粉末触媒中铁含量的增加,合成金刚石的压力和温度条件逐渐增高,金刚石生长的“V形区”上移,同时得出了铁基粉末触媒适合高温区（110）和（111）面生长以及金刚石中铁元素以FeNi和FeyC形式存在的结论．     

Growth and characterization of large, high quality cubic diamond crystals

High quality cubic diamond crystals were grown using the temperature gradient method at high pressure and high temperature(HPHT),in a new FeNi alloy as solvent.The crystals were grown at relatively low temperatures suitable for the growth of {100} faces.An increase in the radial growth rate,and inhibition of the axial growth caused the growth of large,high quality cubic diamond single crystals at high growth rates.For example,over 33 h,the radial growth rate was 0.22 mm/h,while the axial growth rate was only 0.08 mm/h;the growth rate by weight was also increased to 7.3 mg/h.The yellow color of our crystal samples was more uniform than samples from Sumitomo Corporation of Japan and Element Six Corp.The Raman FWHW of the 1332 cm 1 peak in our diamond sample was smaller than the Element Six Corp.sample,but larger than that of the Sumitomo Corp.sample.The nitrogen content of our diamond samples was 240 ppm,which was much higher than the Sumitomo and Element Six samples because of the higher growth rate of our diamond samples.     

Effects of Ti additive on HPHT diamond synthesis in Fe-Ni-C system

Diamond crystals with low nitrogen concentration were synthesized from the Fe-Ni-C system with Ti additive at high pressure and high temperature （HPHT） in a china-type cubic high pressure apparatus （CHPA）. The synthesis pressure range was 4.8-5.2 GPa, and the temperature range was 1420-1600 K. The lowest synthesis pressure for diamond fell first and then rose with the increase of Ti additive. The color, shape, surface morphology and nitrogen impurity concentration of the synthesized diamond crystals were characterized using optical microscopy （OM）, scanning electron microscopy （SEM） and micro Fourier transform infrared （FTIR） spectrometry. The results show that the Ti additive has significant effects on color, growth rate, crystal shape, surface morphology and nitrogen impurity con- centration of the synthesized diamond crystals. The color of diamond crystals synthesized without Ti additive is yellow, while that with Ti additive becomes light and nearly colorless. The growth rate without Ti additive is higher than that with Ti additive. The crystal shapes of as-grown diamond crystals vary with the increase of Ti additive. The {111} crystal faces become dominant and some {311} crystal faces appear with the increase of Ti additive. The concentration of nitrogen impurity in diamond crystals without Ti additive is higher than that with Ti additive.     

Synthesis of boron-doped diamond with laser heated diamond anvil cell

Boron-doped diamond has been synthesized from graphite mixed with different ratio of B₄C at high pressure high temperature (HPHT) using laser heated diamond anvil cell. The starting composition was transformed to diamond compound at pressure ∼9 GPa, 2300–2400 K as indicated by the in-situ X-ray diffraction pattern with synchrotron radiation source. Raman spectrum of the recovered specimen from HPHT state confirmed that boron has been doped into diamond lattice.     

Synthesis of high quality type-Ib diamond crystals in carats grade

High quality type-Ib tower-shape gem-diamond crystals in carats grade were synthesized in cubic anvil high pressure apparatus (SPD-6×1200) at 5.4 GPa and 1250-1450°C. The relationship between the growth time and the weight of growth diamond has been gained. The faces of {110} and {113} were found in the synthetic diamond crystals frequently. We found that the relative growth rate of {113} face was descending with the increase of growth temperature, and that of {110} face had no obvious change with the incre...     

CH4／CO2体系化学气相淀积金刚石的非平衡定态相图计算

用非平衡热力学耦合模型首次获得了由ＣＨ４／ＣＯ２体系化学气相淀积金刚石的相图。该相图与用经典平衡热力学得 结果不同,相图中出现了１个金刚石的生长区,相图中的金刚石生长区是实现金刚石气相生长的热力学基础,它的存在体现了超平衡氢原子等激活粒子对石墨的激活和对金刚石的稳定作用。     

Analysis of the carbon source for diamond crystal growth

The lattice constants of diamond and graphite at high pressure and high temperature （HPHT） were calculated on the basis of linear expansion coefficient and elastic constant. According to the empirical electron theory of solids and molecules （EET）, the valence electron structures （VESs） of diamond, graphite crystal and their common planes were calculated. The relationship between diamond and graphite structure was analyzed based on the boundary condition of the improved Thomas-Fermi-Dirac theory by Cheng （TFDC）. It was found that the electron densities of common planes in graphite were not continuous with those of planes in diamond at the first order of approximation. The results show that during the course of diamond single crystal growth at HPHT with metal catalyst, the carbon sources forming diamond structure do not come from the graphite structure directly. The diamond growth mechanism was discussed from the viewpoint of valence electron structure.     

真空条件下钎焊单层金刚石砂轮的研究

单层高温钎焊超硬磨料砂轮具有电镀砂轮无法比拟的优异磨削性能。在真空条件下用Ni-Cr合金做钎料进行了钎焊单层金刚石砂轮的实验研究,实现了金刚石与钢基体间牢固的化学冶金结合。扫描电镜X射线能谱,结合X射线衍射结构分析发现,在金刚石界面上有Cr的碳化物Cr3C2和Cr7C3存在,而钢基体结合界面上则生成有(FexCry)C,这应是金刚石与钢基体之间具有较高结合强度的主要原因,通过磨削实验验证了金刚石确实有很高的把持强度。     

Study on growth of coarse grains of diamond with high quality under HPHT

The growth of coarse grains of diamond was observed with graphite as carbon source and Fe₈₀Ni₂₀ alloy powder as catalyst at HPHT in a China-type SPD 6×1670T cubic high-pressure apparatus with highly exact control system. To synthesize coarse grains of diamond crystal with high quality, advanced indirect heat assembly, powder catalyst technology and catalyst with optimal granularity were used. Especially the nucleation of diamond and the growth rate were strictly controlled by the optimized synthesis craft. At last, diamond crystals (about 0.85 mm) in the perfect hex-octahedron shape were successfully synthesized at ~5.4 GPa and ~1360℃ in 60 min. The characteristic of crystal growth with powder catalyst technology under HPHT was discussed. The results and techniques might be useful for production of coarse grains of diamond.     

Microstructures of metallic film and diamond growth from Fe-Ni-C system

The microstructures of metallic film surrounding diamond have been systemically studied using the transmission electron microscopy (TEM) and the atom force microscopy (AFM). The film can be divided into three layers (inner layer near diamond, external layer near graphite and middle layer). The graphite cannot be directly transformed into diamond in the film at HTHP; there exists a parallel relationship between (−111) of γ-(Fe,Ni) and (110) of Fe₃C in the inner layer; the sawtooth-like step morphology found by AFM on the film is similar to that of corresponding diamond surface. A new model for diamond growth at HPHT is proposed from the parallel relationship and sawtooth-like step morphology. It is believed that Fe₃C may be a transitional phase in the course of diamond growth, γ-(Fe,Ni) in the inner layer can absorb carbon atom groups with lamella structure from Fe₃C, and then the carbon groups stack on growing diamond.     

碳基烧蚀材料高温氧化反应机理的分子动力学研究

本文采用基于紧束缚密度泛函理论的分子动力学,研究高温下碳基烧蚀材料三种模型(无缺陷、原子缺陷以及孔洞缺陷)的氧化反应机制．研究发现高温下的反应产物主要是CO和CO₂.CO的产生过程主要源于环氧基团中C-C键的裂解,而CO₂的形成则较为复杂,主要源于小分子团簇(C₂O₂、C₃O₁、C₄O₁)的裂解．C-C键裂解是石墨氧化反应的主要途径,C-O键形成是CO和CO₂生成速率的控制因素．此外,体系的温度、缺陷以及孔洞对石墨的氧化反应机制有重要的影响．通过分析氧化反应速率,计算得到三种模型氧化反应的活化能分别为7.56、2.4和1.6kcal/mol．缺陷越明显活化能越低,则氧化反应速率较高,无缺陷的模型由于活化能最高,其氧化反应速率最低．     

人工合成金刚石技术比较

静压法是当前工业合成金刚石的主要的合成手段,合成工业用金刚石主要采用静压法中的静压触媒法,合成宝石级金刚石主要采用静压晶种触媒法生产,通过静压法中的直接变换法,纯净的多晶石墨棒可以在短时间内转化为多晶金刚石,二十世纪八十年代还出现了一种在低压下生长金刚石的新方法——化学气相沉积法(CVD),目前只能用于制备金刚石薄膜,本文通过总结比较各种金刚石合成技术,提出了利用激光控制金刚石生长的设想,使用这种方法将提高金刚石的质量,     

高压下ZrB3与NbB3力学性质的第一性原理研究

此文用密度泛函理论的赝势平面波方法的第一性原理研究了过渡金属化合物ZrB_3与NbB_3(m-AlB_2、OsB_3和MoB_3结构)在高压下的力学性质和电子结构特点,获得了在常压下,m-AlB_2是最稳定的结构,当压强升高到40GPa时发生相变,高压下最稳定是OsB_3结构.m-AlB_2-NbB_3具有最大的剪切模量204GPa,最高的德拜温度921K和最大的硬度值27.3GPa,属于潜在的超不可压缩材料.MoB_3-NbB_3、OsB_3-NbB_3和m-AlB_2-ZrB_3的硬度值分别达到了24.9GPa、22.6GPa和19.8GPa.它们的电子态主要是由M-4d态和B-2p态杂化叠加形成的,在费米能级处取值均不为零,故这些化合物都具有金属性等有益结果.     

高石墨铜基复合自润滑材料的组织结构与性能

以Cu-Ni粉末为基体,添加定量的W,SiC,Y2O3和MoS2相,以粉末冶金方法制备石墨质量分数分别为3%,3.5%,4%,4.5%和5%的高石墨含量铜基复合自润滑材料.利用金相显微镜、扫描电镜、X射线衍射仪、共聚焦成像仪和摩擦试验机对样品的组织结构和性能进行分析.结果表明:材料的最佳烧结温度为910℃,烧结时间为4 h;材料的组织由铜的α固溶体,Cu0.8Ni0.19,WMoS2,SiC和石墨等组成.力学性能随着石墨含量的增加而降低,但自润滑效果比较好.在保证材料基体具有高力学性能的基础上,提高材料中固体润滑相的含量,是制备高耐磨自润滑材料的关键因素.     

铁基金属玻璃涂层在无铅钎料中的耐腐蚀性及机理

选用Fe基非晶合金粉末(含有Cr、Mo、Ni、P、B、Si),采用等离子喷涂方法在Q235基体上制备了金属玻璃涂层.在自行设计的腐蚀实验装置中将Q235钢、1Cr18Ni9Ti不锈钢和覆有Fe基金属玻璃涂层的Q235钢浸入450,℃的高温液态无铅钎料Sn-3.5,Ag-0.5,Cu中进行腐蚀,利用扫描电子显微镜微观分析了腐蚀后的微观形貌及腐蚀产物.研究结果表明:相同实验条件下,Q235钢和1Cr18Ni9Ti不锈钢表面均腐蚀严重,断面微观组织分为钎料层、腐蚀层和基体层.其中Q235钢的腐蚀剧烈,腐蚀层成分为FeSn2;1Cr18Ni9Ti不锈钢腐蚀较严重,腐蚀层成分为(Fe,Cr)Sn2.Q235基体表面的Fe基金属玻璃涂层腐蚀前后断面微观形貌变化不大,没有出现明显的腐蚀分层,表现出了非常好的耐高温无铅钎料腐蚀的能力.     

Effects of carbon diffusing field in alloy solvent on the growth of tower-shape diamond single crystal

High-quality type-Ib tower-shape diamond single crystals were synthesized in cubic anvil high pressure apparatus (SPD-6×1200) at 5.4 GPa and 1250-1450°C. The (100) face of seed crystal was used as the growth face, and FeNiMnCo alloy was used as the solvent/catalyst. Two kinds of carbon diffusing fields (type-B and type-G) were simulated by finite element method (FEM). Using the two kinds of carbon diffusing fields, many diamond single crystals were synthesized. The effects of carbon diffusing fields on the ...     

Synthesis of Ta C and Ta_2C from tantalum and graphite in the laser-heated diamond anvil cell

The pressure dependence of the onset of the formation of Ta C and Ta2 C from the elements has been investigated by in situ X-ray diffraction and pyrometry.Ta C has been synthesized by the reaction of Ta and graphite at pressures between 8.6 and 14.3 GPa and at temperatures up to 2,300 K using a laser-heated diamond anvil cell. The products were characterized by X-ray diffraction. Ta and graphite begin to react around 1,100 K at ambient pressure conditions, and the reaction temperature increases with increasing pressure. A linear extrapolation of these data is consistent with recent observations of the formation of Ta C at 90 GPa and 3,600 K. We show that diffusion of carbon into tantalum significantly changes the lattice parameter of up to 2 % in the pressure range of up to19 GPa. In some experiments, Ta2 C was formed concomitantly. The experimentally determined bulk modulus of Ta2 C is B0;exp：= 286（5） GPa. Other tantalum carbide phases were not observed.