Effect of additive boron on type-Ib gem diamond single crystals synthesized under HPHT |
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| Authors: | LiQiu Ma HongAn Ma HongYu Xiao ShangSheng Li Yong Li XiaoPeng Jia |
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| Institution: | 1 National Key Laboratory of Super Hard Materials, Jilin University, Changchun 130012, China;
2 Institute of Material Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, China |
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| Abstract: | The boron-doped type-Ib gem diamond crystals were synthesized successfully by adding amorphous boron into a system of graphite and Kovar catalyst under high pressure and high temperature (HPHT).The effect of additive boron on type-Ib gem diamond was extensively studied including the growth characteristic,morphology and nitrogen concentration.The synthesized boron-doped type-Ib gem diamond crystals were characterized by optical microscope (OM),scanning electron microscope (SEM) and infrared spectrometer (IR)... |
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| Keywords: | gem diamond catalyst additive boron HPHT |
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