Synthesis of high quality type-Ib diamond crystals in carats grade

High quality type-Ib tower-shape gem-diamond crystals in carats grade were synthesized in cubic anvil high pressure apparatus (SPD-6×1200) at 5.4 GPa and 1250-1450°C. The relationship between the growth time and the weight of growth diamond has been gained. The faces of {110} and {113} were found in the synthetic diamond crystals frequently. We found that the relative growth rate of {113} face was descending with the increase of growth temperature, and that of {110} face had no obvious change with the incre...     

Study on growth of coarse grains of diamond with high quality under HPHT

The growth of coarse grains of diamond was observed with graphite as carbon source and Fe₈₀Ni₂₀ alloy powder as catalyst at HPHT in a China-type SPD 6×1670T cubic high-pressure apparatus with highly exact control system. To synthesize coarse grains of diamond crystal with high quality, advanced indirect heat assembly, powder catalyst technology and catalyst with optimal granularity were used. Especially the nucleation of diamond and the growth rate were strictly controlled by the optimized synthesis craft. At last, diamond crystals (about 0.85 mm) in the perfect hex-octahedron shape were successfully synthesized at ~5.4 GPa and ~1360℃ in 60 min. The characteristic of crystal growth with powder catalyst technology under HPHT was discussed. The results and techniques might be useful for production of coarse grains of diamond.     

Mechanism of diamond-to-graphite transformation at diamond-stable conditions

The diamond-to-graphite transformation at diamond-stable conditions is studied by temperature gradient method （TGM） under high pressure and high temperature （HPHT）, although it is unreasonable from the view of thermodynamic considerations. It is found that, at diamond-stable conditions, for example, at 5.5 GPa and 1550 K, with fine diamond grits as carbon source and NiMnCo alloy as metal solvent assisted, not only large diamond crystals, but metastable regrown graphite crystals would be grown by layer growth mechanism, and the abundance of carbon source in the higher temperature region is indispensable for the presence of metastable regrown graphite crystals. From this transformation, it is concluded that, with metal solvent assisted, although the mechanism of crystal growth could be understood by the macro-mechanism of solubility difference between diamond and graphite in metal solvents, from the point of micro-mechanism, the minimum growth units for diamond or graphite crystals should be at atomic level and unrelated to the kinds of carbon source （diamond or graphite）, which could be accumulated free-selectively on the graphite with Sp2Tr or diamond crystals with sp3 bond structure.     

电镀晶种法合成金刚石单晶实验研究

目的寻求一种合成金刚石大单晶的有效方法。方法采用在金刚石单晶上面电镀一层金属镍膜作为触媒,镀有镍膜的金刚石晶种被规则地放在石墨片上预先刻好的洞中,每两个洞之间保持相等的间距,然后与其他石墨片交替组装在高温高压下进行实验合成。结果实验结果表明,在合成压力、温度和时间分别~5.8 GPa、~1 460℃和14 min的条件下,合成后的单晶尺寸约是原晶种的3倍。与传统的合成工艺相比较,合成后的金刚石单晶具有较好的形貌与质量。结论采用电镀晶种法合成对高品级金刚石大单晶的合成具有一定参考意义。     

铁基粉末触媒合成金刚石

本文利用六种铁基粉末触媒（FeNiNa,n=0,1,2,3,d,5X。代表Fe在触媒中的含量,Xn〉xn-1）在国产六面顶压机上进行了金刚石单晶的合成实验,研究了高温高压条件下（～6GPa,～1600℃）,铁基粉末触媒随铁含量的改变,石墨碳—铁基触媒体系合成金刚石条件的变化规律以及金刚石单晶的生长特性,利用穆斯堡尔谱对金刚石中铁元素形成的包裹体进行了检测．结果表明,随着铁基粉末触媒中铁含量的增加,合成金刚石的压力和温度条件逐渐增高,金刚石生长的“V形区”上移,同时得出了铁基粉末触媒适合高温区（110）和（111）面生长以及金刚石中铁元素以FeNi和FeyC形式存在的结论．     

Diamond synthesis from a system of chromium-carbide and Ni70Mn25Co5 alloy

In order to ascertain the mechanism of interaction between carbide and metallic catalyst and formation of diamond under high pressure and high temperature, and find a new method to synthesize diamond with special properties, it is necessary to investigate the reaction behavior of different carbides and metallic solvent_catalysts under high pressure and high temperature. A system of Cr-3C-2 powder and Ni 70Mn 25Co 5 alloy in weight ratio of 1∶6 was treated under 6 0 GPa and 1 500℃ for 20, 30 or 60 min respectively. X_ray diffraction of the samples indicated the Cr 3C 2 decomposed partially after high pressure and temperature treatment, and Cr 7C 3, Cr and diamond formed respectively. There was not any trace of graphite in the samples. The result suggested that the separated carbon atoms could form diamond directly without conversion process of graphite into diamond. The observation of SEI, WDX and EDX also showed that diamond crystals were synthesized in the system, which have perfect surfaces and shapes, with the average grain size of about 40 μm. The properties of the crystals are being investigated.     

单晶金刚石在铁基合金中的性态与行为

将金刚石单晶孕镶在Ｆｅ基合金中，在一定条件下烧结，发现金刚石受到明显刻蚀，但晶体结构和强度未变，刻蚀在金刚石与结合剂的界面发生，它是金刚石晶格中的Ｃ原子溶入Ｆｅ，并在其中扩散的过程，适当控制这一扩散过程，将使Ｆｅ基结合剂的金刚石工具获得优良性能。     

Synthesis of boron-doped diamond with laser heated diamond anvil cell

Boron-doped diamond has been synthesized from graphite mixed with different ratio of B₄C at high pressure high temperature (HPHT) using laser heated diamond anvil cell. The starting composition was transformed to diamond compound at pressure ∼9 GPa, 2300–2400 K as indicated by the in-situ X-ray diffraction pattern with synchrotron radiation source. Raman spectrum of the recovered specimen from HPHT state confirmed that boron has been doped into diamond lattice.     

Fe-Ni-C粉末触媒体系金刚石的合成与表征

利用FeNi粉末触媒在六面顶压机上进行工业金刚石单晶的合成与表征. 结果表明: 在Fe-Ni-C体系合成了优质的六面体、 六-八面体及八面体金刚石单晶; 金刚石{111}晶面的生长属于二维层状生长机制; 金刚石中的包裹体主要由FeNi合金组成.     

Effect of additive boron on type-Ib gem diamond single crystals synthesized under HPHT

The boron-doped type-Ib gem diamond crystals were synthesized successfully by adding amorphous boron into a system of graphite and Kovar catalyst under high pressure and high temperature (HPHT).The effect of additive boron on type-Ib gem diamond was extensively studied including the growth characteristic,morphology and nitrogen concentration.The synthesized boron-doped type-Ib gem diamond crystals were characterized by optical microscope (OM),scanning electron microscope (SEM) and infrared spectrometer (IR)...     

金刚石圆锯片磨损过程的研究

通过对金刚石圆锯片锯切花岗石过程的试验研究和应用扫描电镜对金刚石锯齿的磨损表面进行的形貌观察，发现金刚石存在五种基本的磨损形态：初期磨损、抛光、局部破碎、大面积或整体破碎和脱落，金刚石一般都要经过初期磨损、正常磨损和剧烈磨损三个磨损阶段．应用统计学方法探讨了金刚石锯片的磨损过程与锯切性能的关系，为生产厂家改善锯片的锯切性能提供了理论依据和方法．     

铁镍触媒合成金刚石内部包裹体的研究

分析铁镍触媒合成金刚石内部的包裹体成分及形成原因. 结果表明: 金刚石晶体中的包裹体主要以FeNi合金和Fe₃C形式存在; 随着生长速度加快, 金刚石内部包裹体的点状分布逐渐增多; 在不同温度下, 进入金刚石晶体内部包裹体的方式不同; 随着包裹体的增多, 合成的金刚石晶体硬度降低. 通过调整合成工艺, 合成了包裹体含量极少、 粒度约为0.6~0.7 mm的金刚石单晶.     

人工合成金刚石的体扩散机制

本文研究了在合金触媒参与下石墨转变为金刚石的机理。认为在超高压高温条件下,石墨以碳原子集团的形式扩散到溶剂合金中,形成似胶体溶液的扩散区。在合金触媒的催化作用下,正离子化的碳原子集团相变成金刚石结晶基元。结晶基元达到过饱和时,经体扩散在合金与石墨的界面上形核生长,沿金刚石[111]和[100]方向长大,长成立方-八面体。     

食物对湖北钉螺(Oncomelania hupensis)发育繁殖的影响

用浮游植物(A)、鲫鱼(B)、河蚌(C)、蚯蚓(D)及以浮游植物与3种动物分别混合组成(E、F、G)的7种饲料喂养钉螺,观察其幼螺成活、生长及雌螺产卵量.结果表明,饲料G喂养的钉螺幼螺成活率(43%)明显高于其他饲料(0~33.3%,),B和C喂养钉螺,其幼螺在一个月内全部死亡;在25℃的条件下,饲料A和G喂养的幼螺发育最快,105d其体长分别为6.89mm和6.81mm,且显著长于(P<0.05)饲料D、E、F喂养的钉螺(其体长分别为3.05mm、4.51mm、5.11mm).在25℃的温度条件下饲料A饲养的钉螺产卵时间长、产卵量高(13.9%),与混合型饲料G喂养的钉螺产卵量(14.1%)相当,而明显高于(P<0.05)饲料D、E、F喂养的钉螺(分别为2.9%、10.1%、11.0%);动物型饲料B和C产卵时间短、产卵量最低(不到2%).因此,植物饲料A和混合饲料G适宜于喂养钉螺.     

Optical homogeneity of ADP crystals from rapid growth

ADP (NH₄H₂PO₄) crystals were grown through the traditional method and rapid growth technology. The optical homogeneity of rapid grown ADP crystals was analyzed by laser interferometry and X-ray topography. Laser interferometry revealed sector boundaries at which optical homogeneity decreased dramatically. The main defects that seriously reduced the optical homogeneity of the rapid grown ADP crystal were sector boundaries, growth bands and inclusions. The concentration of Fe and Cr impurities was tested by a plasma emission spectrometer. It was found that the preferential incorporation of metallic impurities into the prismatic faces resulted in high density of growth bands and inclusions, thus reducing optical homogeneity of the prismatic sector.     

Research of {0001} crystal orientation for magnesium alloys solidified in a fashion of cellular crystals

The magnesium alloy grew in a fashion of cellular crystals during the process of unidirectional solidification, and the {0001} crystal face orientation in the cast ingot of the magnesium alloy was studied. The theoretical model and methodology were set up, and a corresponding experiment was carried out to verify the theoretical analysis results. The experimental results indicate that the {0001} crystal face of magnesium crystals parallels to the width direction for the thin-plate cast ingot when the magnesium grows in a manner of cellular crystals. The separation angle between the {0001} crystal face of magnesium crystals and the vertical axis line of the cast ingot is about 62° for the circular column cast ingot, which distributes in cone-type. The theoretical analysis results are basically in agreement with the experimental ones of previous literatures and this paper.     

高白填料氢氧化铝的微观结构

不同分解工艺生产的高白填料,其氢氧化铝晶体生长形态不同.采用扫描电镜、X射线衍射和拉曼光谱等分析手段研究了碳分和种分氢氧化铝高白填料产品的微观结构,揭示了它们晶体发育的变化.结果表明,高白填料氢氧化铝晶体属单斜晶系,空间群P21/n,择优生长晶面均为(002)晶面;种分氢氧化铝晶体比碳分氢氧化铝晶体的(002)晶面择优取向因子值小,为多晶面生长;种分氢氧化铝晶体晶格参数比碳分氢氧化铝晶体晶格参数和拉曼光谱特征峰半高宽数值小,因此,种分高白填料氢氧化铝晶体中杂质和晶格缺陷比较少,晶体结晶度明显好于碳分高白填料产品.     

Fe-Si-C体系合成金刚石的生长特性

研究高温高压下掺Si合成金刚石, 并与Fe-C体系合成的金刚石进行比较. 实验结果表明, 体系中掺入Si, 合成的晶体颜色比Fe-C体系合成的晶体颜色浅, 在相同的合成时间内, Fe-Si-C体系合成金刚石的粒度比Fe-C体系合成金刚石的粒度小; 通过X射线衍射(XRD)可见, 该体系产生FeSi和Fe₃C两种新物质.      

Analysis of the carbon source for diamond crystal growth

The lattice constants of diamond and graphite at high pressure and high temperature （HPHT） were calculated on the basis of linear expansion coefficient and elastic constant. According to the empirical electron theory of solids and molecules （EET）, the valence electron structures （VESs） of diamond, graphite crystal and their common planes were calculated. The relationship between diamond and graphite structure was analyzed based on the boundary condition of the improved Thomas-Fermi-Dirac theory by Cheng （TFDC）. It was found that the electron densities of common planes in graphite were not continuous with those of planes in diamond at the first order of approximation. The results show that during the course of diamond single crystal growth at HPHT with metal catalyst, the carbon sources forming diamond structure do not come from the graphite structure directly. The diamond growth mechanism was discussed from the viewpoint of valence electron structure.     

Flux-Bridgman growth and characterization of Mn-doped ZnO single crystals

Mn-doped ZnO single crystals have been grown by the flux-Bridgman method from a high temperature solution of 24% ZnO-76%PbF_2(molar fraction).A fast nucleation was induced by the gas-cooling system at the bottom of the Pt crucible.A red Mn.ZnO crystal up to 13 mm×15 mm×(3-4) mm was obtained.Powder XRD patterns showed that the as-grown crystals were in wurtzite structure.Electron Probe Microanalyser(EPMA) revealed that some PbF_2 inclusions formed due to fast nucleation.The additional Raman mode at 524 cm ' ...