Structural and electrical properties of ZnO films on freestanding thick diamond films

In this paper, ZnO films are deposited on freestanding thick diamond films （FTDF） by plasma-assisted metal organic chemical vapour deposition （MOCVD）. Diethyl zinc （DEZn）, O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction （XRD）, Hall measurements and electron probe microanalysis （EPMA）. Experimental results demonstrate that ZnO films deposited at 600℃ and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.     

Effect of oxygen partial pressure and transparent substrates on the structural and optical properties of ZnO thin films and their performance in energy harvesters

Zinc oxide (ZnO) thin films were deposited onto different substrates-tin-doped indium oxide (ITO)/glass, ITO/polyethylene naphthalate (PEN), ITO/polyethylene terephthalate (PET)-by the radio-frequency (RF) magnetron sputtering method. The effect of various O₂/(Ar+O₂) gas flow ratios (0, 0.1, 0.2, 0.3, 0.4, 0.5, and 0.6) was studied in detail. ZnO layers deposited onto ITO/PEN and ITO/PET substrates exhibited a stronger c-axis preferred orientation along the (0002) direction compared to ZnO deposited onto ITO/glass. The transmittance spectra of ZnO films showed that the maximum transmittances of ZnO films deposited onto ITO/glass, ITO/PEN, and ITO/PET substrates were 89.2%, 65.0%, and 77.8%, respectively. Scanning electron microscopy (SEM) images of the film surfaces indicated that the grain was uniform. The cross-sectional SEM images showed that the ZnO films were columnar structures whose c-axis was perpendicular to the film surface. The test results for a fabricated ZnO thin film based energy harvester showed that its output voltage increased with increasing acceleration of external vibration.     

Photore sponse and H2 gas sensing properti es of highly oriented Al and Al/Sb doped ZnO thin films

ZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated.The thin films were deposited on Si substrates by the sol-gel method.The structural,optical and electrical properties of ZnO films have been investigated by spectrophotometry,ellipsometry,X-ray diffraction and current-voltage characterizations.It is found that the films exhibit wurtzite structure with a highly c-axis orientation perpendicular to the surface of the substrate,a high reflectivity in the infrared region and a response to illumination.Furthermore,it has been found that Si/（ZnO:Al/Sb）/Al photodiode is promising in photoconduction device while Si/（ZnO:Al）/Al can be used as gas sensor responding to the low H₂concentrations.     

溅射气压对ZnO薄膜生长、发光性能和结构的影响

沉积缺陷少、晶粒高度c轴择优生长的ZnO薄膜是制备短波发光器件和压电谐振传感器的关键问题之一.以ZnO为靶材,采用射频磁控溅射法在玻璃衬底上制备纳米ZnO薄膜,实现了室温下强的紫外受激发射和弱的深能级发射.通过对薄膜表面形貌的观测, 以及对X射线衍射(XRD)谱和室温光致发光(PL)谱的分析,研究了不同溅射气压对ZnO薄膜生长、结构和发光性能的影响.结果显示溅射气压在1.9 Pa-3.5 Pa之间,晶粒直径先增大后减小,在2.6 Pa时晶粒生长到最大;在3.2 Pa时薄膜单一取向性最优,以此推断最佳的溅射气压在2.6 Pa-3.2 Pa之间.实验在玻璃衬底上制备出了XRD衍射峰半高宽仅为0.12°的、高度c轴择优生长的ZnO薄膜.     

退火温度对ZnO/SiO_2复合薄膜结构及光学性能的影响

采用溶胶-凝胶(sol-gel)法在玻璃衬底上制备ZnO/SiO2(ZSO)复合薄膜,并采用扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外-可见分光光度计(UV-Vis)和光致发光(PL)谱对样品的形貌、晶体结构、透过率及光致发光性能进行表征.SEM结果表明,样品为双层结构,随着退火温度的升高,颗粒变大,并产生团聚现象;XRD结果表明,样品经退火处理后生成六方纤锌矿型ZnO,衍射峰强度和晶粒尺寸随退火温度的升高而增大;UV-Vis结果表明,样品同时具有ZnO和SiO2特征吸收边,双层复合薄膜中ZnO和SiO2两种不同材料的能带不连续导致360nm附近的曲线不平滑,并使能带蓝移,经400℃退火处理后的样品透过率较高;PL谱结果表明,在355nm波长激发下,样品分别在紫外区和蓝光区域产生发射峰,随着退火温度的升高,样品内缺陷密度减小,由缺陷引起的发光强度减弱.     

氧分压对射频磁控溅射制备氧化锌薄膜光电学性质的影响

利用射频磁控溅射在石英基片上沉积ZnO薄膜.为了研究氧分压对ZnO薄膜的结构和光电学性质的影响,在氧分压0.00,2.54,5.06,7.57 mPa的条件下制备了4个样品.样品的微结构、表面形貌和光电学性质分别用X射线衍射仪、原子力显微镜、分光光度计和Van der Pauw方法进行测量.结果表明,所有样品的主要衍射...     

Co掺杂ZnO薄膜的结构及光磁性能研究

采用溶胶-凝胶旋涂法在玻璃衬底上制备了Zn1-xCoxO(x=0,0.01,0.03,0.05,0.08,0.12)薄膜.利用显微镜和X射线衍射(XRD)研究了ZnO:Co薄膜的表面形貌和微结构.结果表明,所有ZnO薄膜样品都存在(002)择优取向,尤其是当掺杂浓度为12%时,薄膜c轴择优取向最为显著.振动样品磁强计(VSM)测量表明Zn1-xCoxO薄膜具有室温铁磁性.室温光致发光测量发现,所有样品的PL谱中都出现了较强的蓝光双峰发射和较弱的绿光发射,分析认为这主要是由于Co元素的掺入改变了薄膜的禁带宽度、锌填隙缺陷和氧位错缺陷浓度,其中长波长的蓝光峰和绿光峰都能够通过掺杂进行控制.基于上面的测量结果,探讨了不同波段光发射的机理与掺杂状态之间的关系.     

氧对纳米ZnO薄膜晶体结构和光致发光的影响

ZnO是一种直接带半导体材料，在光电领域中和GaN一样受到关注．ZnO不仅有与GaN相似的晶体结构，而且它的激子结合能高达60meV，是GaN的2．4倍．采用射频(RF)磁控溅射法在n-Si(001)衬底上生长ZnO薄膜，XRD谱测量显示出氧压对ZnO薄膜的晶体结构有显著影响，用波长为325nm的激光激发，观察到在445nm处有一强的光致发光峰，它来自于氧空位浅施主能级上的电子跃迁到价带，分析了发光峰与氧压的关系以及退火对它的影响。     

Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties

Tin sulfide (SnS) thin films were prepared by electrodeposition onto fluorine-doped tin oxide (FTO) glass substrates using an aqueous solution containing SnCl₂ and Na₂S₂O₃ at various deposition potentials (E) and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), photoluminescence (PL), and ultraviolet–visible (UV–Vis) spectroscopy. The FESEM images demonstrated that changes in the deposition potential (E) and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis (EDXA) results showed that the Sn/S atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an Sn/S atomic ratio approximately equal to 1, the optimal Sn2+/S₂O₃2- molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy (E_g) were studied using PL and UV–Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared (IR) region. The UV–Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.     

自持金刚石厚膜上沉积N掺杂ZnO薄膜的生长及电学特性

采用金属有机化合物气相沉积(MOCVD)两步生长法在自持化学气相沉积(CVD)金刚石厚膜的成核面上制备ZnO薄膜, 并研究了薄膜的生长特性和电学特性. 结果表明, 在基片温度为600 ℃时沉积得到的ZnO薄膜表面均匀, 取向较一致, 为c轴取向生长. 其载流子迁移率为3.79 cm²/(V·s).      

磁控溅射PP基氧化锌／铜层状膜性能研究

用磁控溅射法在PP非织造布表面沉积氧化锌/铜薄膜来增加抗静电、抗菌、抗紫外等性能．研究首先采用正交试验设计方法沉积铜薄膜,选择最优抗静电性效果的铜膜．铜膜参数为1Pa,20W,5min时,抗静电性能达到最好．接着在沉积最优铜膜的PP表面溅射不同参数氧化锌形成层状膜,并利用扫描电子显微镜进行表面分析．结果表明,ZnO／Cu层状膜比ZnO单层膜颗粒明显且更加致密．经过测试后,镀层状膜的PP具有良好的抗紫外透过性和良好的抗菌性．氧化锌参数为0．5Pa,75W,40min,铜膜参数为1Pa,20W,5min具有最好抗紫外性．     

阴极真空电弧沉积MgO薄膜的椭偏光谱研究

采用阴极真空电弧离子沉积技术在硅基片上制备出了MgO薄膜。利用椭圆偏振光谱、原子力显微镜及扫描电子显微镜分别对不同氧流量下制备的MgO薄膜的厚度,光学常数,表面粗糙度及表面形貌进行了分析,并对椭圆偏振光谱的光学粗糙度结果和原子力显微镜的均方根粗糙度结果进行了对比和分析。结果表明,不同氧流量下制备出的MgO薄膜,表面粗糙度及薄膜颗粒随着氧流量的增加而增大。椭偏光谱与AFM得到的表面粗糙度存在线性一致关系,表明椭偏光谱可作为一种很好的无损分析手段。     

铝掺杂氧化锌薄膜的光学性能及其微结构研究

以氧化铝(Al2O3)掺杂的氧化锌(Zn O)陶瓷靶作为溅射靶材,采用射频磁控溅射工艺在玻璃基片上制备了具有c轴择优取向的铝掺杂氧化锌(Zn O:Al)薄膜样品.通过可见-紫外光分光光度计和X射线衍射仪的测试表征,研究了生长温度对薄膜光学性能及其微结构的影响.实验结果表明:薄膜性能和微观结构与生长温度密切相关.随着生长温度的升高,样品的可见光平均透过率、(002)择优取向程度和晶粒尺寸均呈非单调变化,生长温度为640 K的样品具有最好的透光性能和晶体质量.同时薄膜样品的折射率均表现为正常色散特性,其光学能隙随生长温度升高而单调增大.与未掺杂Zn O块材的能隙相比,所有Zn O:Al薄膜样品的直接光学能隙均变宽.     

A1掺杂ZnO薄膜的结构研究

采用直流反应磁控溅射方法,在玻璃衬底上制备了Al掺杂ZnO薄膜.系统研究了不同氩氧体积比、不同退火温度和氛围、不同Al掺杂浓度对薄膜结构的影响.结果显示,Al掺杂ZnO薄膜为多晶薄膜,呈六角纤锌矿结构,制备条件和后期处理以及掺杂浓度对薄膜的微结构有着很大的影响.在氩氧体积比6:1条件下制备的薄膜,经真空500℃退火后具...     

缓冲层对AZO薄膜的性能影响

采用射频磁控溅射法分别在ZnO缓冲层和Al2O3缓冲层上制备Al掺杂ZnO(AZO)薄膜,利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、紫外-可见分光光度计、霍尔测试仪等仪器对薄膜的光电特性进行表征.XRD分析结果表明,加入缓冲层的薄膜具有更好的c轴择优取向,薄膜的表面平整,结晶质量有所改善,薄膜在可见光范围内的平均透过率超过80%.引入ZnO缓冲层制备的AZO薄膜的最低电阻率为5.8×10-4 Ω·cm,导电性能得到明显提高.     

溅射法制备的ZnO薄膜的光发射

报道了用射频磁控溅射法在硅衬底上制备出具有好的(002)择优取向的多晶ZnO薄膜，在514nm处观察到显著的单色绿光发射峰；且随着氧分压的增加，绿光发射峰的强度减弱．经真空中退火该发射峰增强；而在氧气中退火该发射峰强度减弱．该发射峰强度依赖于氧分压的事实表明：514nm绿光发射峰与ZnO薄膜中的氧空位缺密切相关，认为它来自于氧空位缺陷深施主能级上的电子到价带顶上的跃迁．     

氧分压对Zn0.99Mn0.01O稀磁薄膜结构和磁学特性的影响

采用脉冲激光沉积技术在Al2O3衬底上制备了Mn掺杂的ZnO稀磁薄膜.通过不同氧压下所制备样品的微观结构、光学性质和铁磁特性分析,研究了氧分压对Zn0.99Mn0.01O稀磁薄膜微观结构和磁学特性的影响.结果表明,所沉积薄膜均具有良好的c轴择优取向.在氧分压为5 Pa时得到的(002)衍射峰半高宽最小,但薄膜的室温铁磁...     

衬底温度对ZnO：Al薄膜结构和光透过性能的影响

利用超声喷雾热解方法以不同的沉积温度（450～530℃）在石英衬底上制备出具备较高光学质量的ZnO：Al（AZO）薄膜.通过X射线衍射谱（XRD）研究了薄膜的结构,用扫描电子显微镜（SEM）研究了薄膜的表面形貌,用紫外可见（UV）分光光度计对薄膜的光透过特性进行了测试分析.结果表明：所制备薄膜在可见波段具有较高透过率,并且沉积温度对AZO薄膜的结构和光透过性能有很大影响.在衬底温度为470℃时得到的AZO薄膜具有（002）择优取向,结晶质量最好、光透过率最高,在可见光区平均透过率达到85%以上.     

生长条件对TiO_2薄膜结构及光学性能的影响

为了研究TiO2薄膜的生长机制及结构对其带隙的影响,采用激光脉冲沉积方法在超高真空下制备了TiO2薄膜.X射线衍射结果显示在不同温度和不同缓冲层上生长的TiO2薄膜以板钛矿结构为主,缓冲层对薄膜结构影响不大,高的生长温度提高了薄膜的结晶度.透射谱的结果表明,随着生长温度和生长气压的升高,TiO2的带隙逐渐增大,在生长ZnO做为缓冲层后,TiO2薄膜的结晶度降低,随ZnO结晶度的提高,TiO2对复合薄膜带隙的影响消失.     

溅射沉积纳米ZnO膜的表征及其性能

利用RF磁控溅射法在PET非织造布表面沉积氧化锌（ZnO）薄膜,并利用原子力显微镜（AFM）和能量弥散X-射线法（EDX）对ZnO薄膜的表面形貌和结构进行表征和分析.结果表明,沉积的ZnO颗粒具备纳米级尺度,且颗粒分布均匀、膜层致密,薄膜颗粒中只含有Zn和O两种元素;随着沉积时间的延长,ZnO呈多层生长模式.测试表明,经ZnO镀层处理的PET非织造布具有较强的紫外线屏蔽效果和优良的抗静电效果.