Structural and electrical properties of ZnO films on freestanding thick diamond films |
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| Authors: | Jian Sun YiZhen Bai JingChang Sun GuoTong Du Xin Jiang |
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| Institution: | (1) State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian, 116024, China;(2) School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China;(3) College of Electronic Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun, 130023, China |
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| Abstract: | In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical
vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence
of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements
and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600°C and 73 Pa display
a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.
Supported by the National Natural Science Foundation of China (Grant No. 60307002) |
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| Keywords: | ZnO diamond MOCVD |
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