n-TiO_2多晶薄膜光阳极的掺杂研究

研究了多晶薄膜 n—TiO_2光阳极通过掺杂以扩展其在可见光区的光谱响应。分别掺入的多种非稀土元素均能扩展其光谱响应,与稀土元素一同掺入可同时增加光阳极在紫外区的量子效率。对掺杂 TiO_2光阳极光电化学性能的研究表明,光谱响应的扩展与其禁带宽度的减小有关。     

硅晶体中禁带宽度与应力关系的光学研究

本文采用光电导光谱分布法和红外光弹法初步研究了硅晶体中禁带宽度与应力的关系。对数块硅晶体进行不同条件的热处理,测试了禁带宽度的变化以及应力状态的变化。发现半导体硅晶体中禁带宽度与应力有明显的对应关系:存在应力时,禁带宽度增加;清除应力后,禁带宽度减少。文中还对实验结果作了理论分析。     

光电池非线性区PN结光生伏特效应的研究

根据光电池线性区应用叠加定理建立的PN结光生伏特效应理论，阐述了PN结光生伏特效应在光电池非线性区的应用。     

纳米TiO2薄膜紫外-可见透射光谱研究

对于采用溶胶-凝胶法和电子束蒸发在普通载玻片上制备的均匀透明纳米TiO2薄膜，通过观测薄膜的紫外-可见光透射率光谱，对其光谱特性和吸收边缘进行了研究，同时测算了TiO2薄膜的光学禁带宽度．     

微晶硅薄膜电池的发展现状及制备技术研究

微晶硅薄膜能够克服非晶硅与多晶硅不足,在光照条件下性能稳定,禁带宽度较低,具有良好的光电转化效率,因此微晶硅薄膜电池是一种非常具有发展前景的薄膜电池。该文综述了微晶硅薄膜电池的发展过程,总结了微晶硅薄膜的制备方法,并根据国内外研究成果,分析了提高微晶硅薄膜转化效率的技术发展方向。     

离子束溅射波积非晶硅的光特性研究

本文论述了应用离子束溅射淀积非晶硅薄膜及薄膜制成后的退火与氢化处理,讨论了薄膜光特性差异的机理和获得良好光特性的方法。文中提供了有关工艺参数、光电导和暗电导与温度的关系曲线以及光学参数。     

非晶态硒化镉薄膜光电特性的研究

本文报道用真空热蒸发淀积非晶态硒化镉薄膜,研究淀积基底温度及退火处理对薄膜光电特性的影响。光谱实验表明吸收边有随基底温度降低而向长波方向移动的现象,发现淀积基底温度为150℃的样品其光电导与暗电导的比率最高。用超短序列光脉冲对薄膜的瞬态光电导特性进行研究,表明非晶态硒化镉薄膜对ps级超短光脉冲具有良好的瞬态响应,可用作快速光电探测器的光敏材料薄膜。     

光电转换中敏化剂的光增感效应

采用具有光和能的有机染料或导电高聚物作为光敏化剂，将其修饰到半导体超微粒多孔膜电极上，能使宽禁带宽度半导体电极吸收的光波长扩展至可见和红外光区，大大提高和改善该复合电极的光电转换效率。本文对敏化剂的作用机理、修饰电极的光增感作用进行了探讨。     

氧氩流量比对氧化铋纳米薄膜微结构及光电性能的影响研究

为了制备出不同光电性能的氧化铋薄膜,并明晰其性能机理,以便后续研究与氧化锌薄膜复合成压敏薄膜.采用磁控溅射法,改变溅射气氛中氧气和氩气的流量比,在玻璃衬底上制备出了三个氧化铋薄膜样品,并对其微观形貌、结构及光电性能进行了测试分析.结果表明:溅射气氛中的氧氩流量比对薄膜微结构及光电性能影响显著;不同氧氩流量比制备的Bi2 O3薄膜中均含BiO2和Bi杂相,且随着氧氩流量比由0:40增大至4:36,薄膜中Bi含量减少,BiO2增加;薄膜颜色由黑变黄;沉积速率由14 nm/min减少至12 nm/min;晶粒尺寸增大,表面趋向致密均匀,可见光区透过率由0.25％增加到56.73％;禁带宽度由0增加到3.17 eV;载流子浓度、导电性能急剧降低,调节溅射气氛中氧氩流量比可有效控制氧化铋薄膜的禁带宽度,载流子浓度等,从而获得不同光电性能的薄膜样品.     

透明导电薄膜(Ⅱ):多元透明导电氧化物薄膜

透明导电薄膜具有可见光区透光及一定的导电性,包括金属基、氧化物基及其他化合物基透明导电薄膜等.以多元氧化物基透明导电氧化物(TCO)薄膜为对象,综述其组份、组织、相结构、禁带宽度、光电性能等方面的研究进展,并对多元和掺杂TCO薄膜的光电性能进行比较.     

多晶硅膜改善薄发射区晶闸管开通特性机理分析

本文通过建立发射区两区模型,对多晶硅膜改善薄发射区晶闸管开通特性的机理进行了分析,结果表明:基区注入的少子在多晶硅区运动受障碍导致等效薄发射极晶体管的电流增益提高;多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数.管芯测试结果亦表明,由于多晶硅膜的作用,薄发射区晶闸管的开通特性并未因发射区很薄而受影响.     

Experimental and Theoretical Study of Young Modulus in Micromachined Polysilicon Films

IntroductionThe development of microelectromechanicalsystems (MEMS) has achieved impressiveprogress with many new designs that couldpotentially lead to another industrial revolution.However,the long- term durability of the MEMSdevices,which requires a fun…     

Scale dependence of tensile strength of micromachined polysilicon MEMS structures due to microstructural and dimensional constraints

The success of microelectromechanical systems (MEMS) as a key technology in the 21st century depends in no small part on the solution of materials issues associated with the design and fabrication of complex MEMS devices. The reliable mechanical properties of these thin films are critical to the safety and functioning of these microdevices and should be accurately determined. In order to accomplish a reliable mechanical design of MEMS, a new microtensile test device using a magnetic-solenoid force actuator was developed to evaluate the mechanical properties of microfabricated polysilicon thin films with dimensions of 100—660 mm length, 20—200 mm width, and 2.4 mm thickness. It was found that the measured average value of Young抯 modulus, 164±1.2 GPa, falls within the theoretical bounds. The average fracture strength is 1.36 GPa with a standarddeviation of 0.14 GPa, and the Weibull modulus is 10.4—11.7, respectively. Statistical analysis of the specimen size effect on the tensile strength predicated the size effect on the length, the surface area and the volume of the specimens due tomicrostructural and dimensional constraints. The fracturestrength increases with the increase of the ratio of surfacearea to volume. In such cases the size effect can be tracedback to the ratio of surface area to volume as the governing parameter. The test data account for the uncertainties inmechanical properties and may be used in the future reliability design of polysilicon MEMS. The testing of 40specimens to failure results in a recommendation for design that the nominal strain be maintained below 0.0057.     

Determination of Mechanical Properties of Micromembranes with Compressive Residual Stress

A novel model of a load-deflection method to determine the mechanical properties of micromembranes with compressive residual stress is described. Since thin film structures are frequently used in micro devices, characterisation of mechanical properties of thin films is desired by the design and fabrication of micromachines. In this paper, the mechanical properties of thin micromembranes under compressive stress are characterised, which are fabricated by bulk micromachining. The relation between the center deflection and the load pressure on a square membrane is deduced by modelling the membrane as an elastic plate having large deflection with clamped boundaries. According to the model, whether the membrane has initial deflection or not has no effect on the measurement result. The Young's modulus and residual stress are simultaneously determined. The mechanical properties of siliconoxide, silicon nitride membranes and composite membranes of polysilicon with silicon nitride are measured.     

AZO薄膜的光学性质研究

采用直流反应磁控溅射法,用Zn(99.99%)掺Al(1.5%)靶制备出高质量的Al掺杂的ZnO(AZO)薄膜,用紫外可见、红外分光光度计等测试手段对沉积的薄膜进行了表征和分析,并对AZO薄膜的折射率和厚度进行了理论分析。薄膜的光谱分析结果表明:薄膜样品的可见光透射率平均值均在80%以上。AZO薄膜在紫外有很强的吸收峰,在红外区域,其反射率可达70%。通过理论计算得出了AZO薄膜样品的厚度为101 nm,与台阶仪测量的结果基本相符。     

PECVD多晶硅膜的计算机模拟

在LPCVD理论模型基础上,通过引进“电子温度”,对 PECVD多晶硅膜进行了计算机模拟分析.结果表明,射频功率和反应室气压是影响PECVD淀积速率分布的两个主要因素,且两者受p=kW线性关系的制约,即对于一定的射频功率,总可选择一合适的反应室气压,使淀积速率分布最佳.实验结果与理论分析相吻合.     

AZO薄膜的光学性质研究

采用直流反应磁控溅射法,用Zn(99.99%)掺 Al(1.5%)靶制备出高质量的Al掺杂的ZnO(AZO)薄膜,用紫外可见、红外分光光度计等测试手段对沉积的薄膜进行了表征和分析,并对AZO薄膜的折射率和厚度进行了理论分析.薄膜的光谱分析结果表明:薄膜样品的可见光透射率平均值均在80%以上.AZO薄膜在紫外有很强的吸收峰,在红外区域,其反射率可达70%.通过理论计算得出了AZO薄膜样品的厚度为101 nm,与台阶仪测量的结果基本相符.     

一种围栅金属氧化物半导体场效应管阈值电压模型

针对深亚微米金属氧化物半导体场效应管(MOSFET)多晶硅耗尽效应加剧问题,提出了一种全耗尽圆柱形围栅MOSFET阈值电压解析模型.通过求解多晶硅耗尽层电势泊松方程,得到多晶硅耗尽层上的压降,用以修正沟道区的通用边界条件.然后利用叠加原理求解沟道二维电势泊松方程,建立了圆柱形围栅MOSFET的表面势和阈值电压解析模型,并利用器件数值仿真软件Sen-taurus对解析模型进行了验证.研究结果表明,衬底掺杂原子浓度越高,或多晶硅掺杂原子浓度越低,多晶硅耗尽层上的压降就越大,阈值电压偏移也越显著.与现有模型相比,该解析模型的精确度提高了34%以上.     

多晶硅薄膜晶体管的有效迁移率模型

提出一个多晶硅薄膜晶体管的有效迁移率模型.该模型同时考虑了晶体管沟道内晶粒的数目、载流子在晶粒与晶粒间界处不同的输运特性和栅致迁移率降低效应,适应于从小晶粒到大晶粒线性区的多晶硅薄膜晶体管.研究表明:当晶粒尺寸Lg0.4μm时,其有效迁移率主要由晶粒间界控制;降低晶粒间界陷阱态密度可提高有效迁移率;减小栅氧化层厚度可增强栅压对有效迁移率的控制作用;高栅压时出现明显的有效迁移率退化效应.     

A new micro programmable blazed grating (μPBG) and its application to multispectral imaging

A new micro programmable blazed grating (μPBG) was designed, fabricated and characterized using the two-layer polysilicon surface micromachining process. The μPBG presented is simple in structure and has the capability of continuous spectral tuning for a wide wavelength range. To maximize the operational blazed angle, dimple structure was adopted as the key component for grating slats, and its height was close to the air gap. By the measurements, the developed μPBG sample can reach a maximum blazed angle of ~5.19° at a driving voltage of 112 V. Accordingly, the blazed wavelength can reach a mid-infrared wavelength of 4.88 μm. Then, a preliminary experiment to investigate the feasibility of multispectral imaging by using the developed μPBG as the core dispersing element was performed, and the results are encouraging. The advantages of the proposed method for multi- spectral imaging are discussed, and some suggestions for further research are also put forward.