Preparation of BST nanocrystals embedded in SiO<Subscript>2</Subscript> film by magnetron sputtering for nonvolatile memory applications

We develop a method that uses magnetron sputtering to fabricate barium strontium titanate (BST) nanocrystals embedded in dielectric SiO2 films.Transmission electron microscope images show that the BST nanocrystals have an average diameter of 5 nm and are well distributed in the SiO2 film.In addition,we also analyze the BST nanocrystals composition deviation during the sputtering process by electron dispersive spectroscopy.     

氧气气氛下退火温度对BST薄膜结构及物理性能的影响

利用溶胶凝胶法在Pt/TiO2/SiO2/Si (001)衬底上制备了(～70 nm)的Ba0.6Sr0.4TiO3 (BST)薄膜,采用磁控溅射法构建了Pt/BST/Pt/TiO2/SiO2/Si (001)电容器,研究了在氧气气氛中不同退火温度对BST薄膜结构及物理性能的影响.结果发现,650℃退火样品具有良好的结...     

BST铁电厚膜的丝网印刷制备工艺研究

对丝网印刷制备BST铁电厚膜工艺中的粉体合成、浆料配置、烧结条件等进行了研究,采用X射线衍射、透射电镜和扫描电子显微镜及配套的能谱仪对制备的BST粉体与厚膜样品的微观结构、成分进行测试分析.结果表明,在氧化铝衬底上一次印刷湿膜,经1 230～1 260℃烧结0.5 h后可获得单相钙钛矿结构,平均晶粒尺寸可达0.5μm且...     

BST薄膜的湿法化学刻蚀工艺优化及应用初探

采用sol-gel法在SiO2/Si衬底上制备了Ba0.7Sr0.3TiO3(BST)薄膜.利用湿法化学刻蚀技术对BST薄膜进行图形化.通过实验结果对比,选择HF/HNO3/H2O2/H2O(体积比为1∶20∶50∶20)的混合液作为最佳刻蚀液.扫描电镜(SEM)结果表明,刻蚀后BST薄膜表面干净,无残留物,图形轮廓清晰.原子力显微镜(AFM)和X射线衍射(XRD)结果显示,刻蚀后BST薄膜表面粗糙度增大,结晶性退化.对刻蚀后的薄膜在600℃后退火处理,能要在一定程度上恢复其表面形貌和结晶性.应用优化工艺制备BST薄膜阵列,采用剥离法将Au,Ni/Cr和Pt/Ti电极进行微图形化.最后,成功地制备了Au/Ni/Cr/BST/Pt/Ti/SiO2/Si结构的8×8元的红外探测器阵列.     

梯度组分BST薄膜的制备及其电学性能的研究

采用射频磁控溅射方法在Pt/Ti/SiO2/Si(100)衬底上制备上、下梯度组分BST薄膜,研究在相同条件下沉积的上、下梯度组分BST薄膜的微结构及电学性能.实验表明:下梯度组分BST薄膜在测试频率为200 kHz时,介电常数为343.75,介电损耗为0.025;在250 kV/cm偏置电场下,介电调谐率为45.86%,与上梯度组分BST薄膜相近;但是下梯度组分薄膜的优值因子远大于上梯度组分薄膜的优值因子(7.81),达到18.34,说明下梯度组分BST薄膜是比较理想的介电调谐材料,用于微波调谐器件是可行的.     

Etching mechanism of barium strontium titanate （BST） thin films in CHF_3/Ar plasma

Reactive ion etching was used to etch barium strontium titanate thin films in a CHF3/Ar plasma.BST surfaces before and after etching were analyzed by X-ray photoelectron spectroscopy to investigate the reaction ion etching mechanism,and chemical reactions had occurred between the F plasma and the Ba,Sr and Ti metal species.Fluorides of these metals were formed and remained on the surface during the etching process.Ti was almost completely removed because the TiF4 by-product is volatile.Minor quantities of Ti?F could still be detected by narrow scan X-ray photoelectron spectra,and Ti?F was thought to be present in the form of a metal-oxy-fluoride.These species were investigated from O1s spectra,and a fluoride-rich surface was formed during etching.BaF2 and SrF2 residues were difficult to remove because of their high boiling point.The etching rate was limited to 12.86 nm/min.C?F polymers were not found on the surface,indicating that the removal of BaF2 and SrF2 was important for further etching.A 1-min Ar/15 plasma physical sputtering was carried out for every 4 min of surface etching,which effectively removed remaining surface residue.Sequential chemical reaction and sputtered etching is an effective etching method for barium strontium titanate films.     

Out-of-plane and In-plane piezoelectric behaviors of [Ba(Zr0.2Ti0.8)O3]–0.5(Ba0.7Ca0.3TiO3) thin films

The piezoelectric properties of [Ba(Zr_(0.2)Ti_(0.8))O_3]–0.5(Ba_(0.7)Ca_(0.3)TiO_3)(abbreviated as BZT-0.5BCT) thin films deposited on Pt/Ti/SiO_2/Si substrates are reported in the present investigation. The effect of the distances between the target and substrate(d) on the morphology and out-of-plane piezoelectric properties was investigated.The experimental results showed that the ferroelectric domains size was dependent on the distance between the substrate and target and the ferroelectric domain growth was constrained by the grains. The samples exhibited well-defined out-of-plane butterfly loops and hysteresis loops and the one with d of 6.5 cm possessed the optimal ferroelectric properties and it exhibited good in-plane piezoelectric properties.     

Preparation of narrow band gap V2O5/TiO2 composite films by micro-arc oxidation

V₂O₅/TiO₂ composite films were prepared on pure titanium substrates via micro-arc oxidation (MAO) in electrolytes consisting of NaVO₃. Their morphology and elements were characterized by scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) analysis. Phase composition and valence states of species in the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Ultraviolet-visible diffuse reflectance spectra (UV-Vis DRS) were also employed to evaluate the photophysical property of the films. The V₂O₅/TiO₂ composite films show a sheet-like morphology. Not only V₂O₅ phase appears in the films when the NaVO₃ concentration of the electrolyte is higher than 6.10 g/L and is loaded at the surface of anatase, but also V⁴⁺ is incorporated into the crystal lattice of anatase. In comparison with pure TiO₂ films the V₂O₅/TiO₂ composite films exhibit significantly narrow band gap energy. The film prepared in an electrolyte consisting of NaVO₃ with a concentration of 8.54 g/L exhibits the narrowest band gap energy, which is approximately 1.89 eV. The V₂O₅/TiO₂ composite films also have the significantly enhanced visible light photocatalytic activity. The film prepared in an electrolyte consisting of NaVO₃ with a concentration of 8.54 g/L exhibits the best photocatalytic activity and about 93% of rhodamine is degraded after 14 h visible light radiation.     

Silicon nanoporous pillar array and its surface copper deposition

Silicon nanoporous pillar array （Si-NPA） has been prepared by a hydrothermal etching technique. Using Si-NPA as substrate, a Cu/Si-NPA nanocomposite thin film has been obtained with immersion plating method. Morphological and structural analysis indicates that Si-NPA is a typical structural composite system characterized by a triple hierarchical structure, i. e. the array of micron-sized silicon pillars, the nanopores densely distributed on the surface of the pillars, and the silicon nanocrystallites that constitute the pore walls. Cu/Si-NPA inherits the morphological characteristics of Si-NPA. The compactability of the deposited copper nanoparticles varies alternatively with the local geometrical features of Si-NPA and forms a quasi-periodical pattern.Such an experimental phenomenon is attributed to the velocity dependence of the copper deposition upon the local geometrical features of Si-NPA. These results indicate that Si-NPA might be used as an ideal template for preparing specially patterned, structured or functionalized metal/silicon nanocomposite systems.     

一种图案化镍/硅纳米复合体系的制备

以水热制备的具有规则表面形貌和结构的硅纳米孔柱阵列（Silicon Nanoporous Pillar Array,Si-NPA）为衬底,采用浸渍沉积技术并通过调控溶液中Ni2＋的浓度,制备了表面具有不同图案化结构的镍/硅纳米孔柱阵列复合体系。分析表明,Ni^2＋浓度对Ni/Si-NPA表面形貌和结构有很大的影响：高的Ni^2＋浓度下制备的Ni/Si-NPA能够保持Si-NPA衬底的规则阵列结构特征;而低的Ni^2＋浓度下制备的Ni/Si-NPA其衬底规则的阵列结构几乎完全被破坏。优化了制备具有图案化结构特征的Ni/Si-NPA的实验条件,并对Ni/Si-NPA的形成机理进行了探讨。     

Nd掺杂BST薄膜的微结构与光学特性研究

用改进的溶胶-凝胶技术,在硅和石英衬底上制备了不同浓度的Nd掺杂Ba0.80Sr0.20TiO3薄膜,应用XRD和SEM表征了薄膜的晶化行为和微观形貌.测试发现700℃退火后,薄膜晶化情况良好,具有典型的多晶钙钛矿结构,表面致密,无裂纹和孔洞,晶粒生长均匀,随着Nd掺杂量的增加,晶粒尺寸逐渐减小.在200~1 000 nm的波长范围内测试了薄膜的透射谱,用"包络法"计算了薄膜的折射率,薄膜折射率与波长呈现典型的电子带间跃迁的色散关系,波长为400 nm时,1%Nd(按物质的量计算百分比)掺杂的BST薄膜的折射率为2.06,小于纯BST薄膜的折射率2.10,这是由于Nd掺杂引起薄膜内部应力变化造成薄膜折射率降低.由吸收谱和Tauc关系确定了Nd掺杂对薄膜的光学带隙的影响.     

Effects of silty sand on CO<Subscript>2</Subscript> corrosion behavior of low-Cr tubing steel

An experimental study was carried out to assess the effects of silty sand on the CO 2 corrosion behavior of 1 wt% Cr (1Cr) and 3 wt% Cr (3Cr) tubing steel under 0.5 MPa CO 2 at 100°C and 1.5 m/s flow velocity.The 1Cr and 3Cr specimens both suffered general corrosion,but the surface was coarser in the pure CO 2 corrosion environment.Under silty sand conditions,severe pitting corrosion occurred on the 1Cr specimens and some acicular pitting appeared on the 3Cr specimens.The average corrosion rates of 1Cr and 3Cr steels increased by factors of 3 and 1.6,respectively.The corrosion products were analyzed by scanning electron microscopy (SEM),energy dispersive spectroscopy (EDS),X-ray diffraction (XRD),and electrical impedance spectroscopy (EIS).The results show that silty sand acts as an inclusion in corrosion product films and reduces the homogeneity and density of the products,rather than abrading the corrosion film.Ion-diffusion channels may build up around the irregular silty sand;this would degrade the protective capabilities of the product films and aggravate corrosion.     

Mg-2.4Nd-0.5Sr-0.3Zr生物镁合金表面耐蚀抑菌层的制备与表征

以AgNO_3溶液为介质,采用水热法在Mg-2.4Nd-0.5Sr-0.3Zr生物镁合金表面制备具有抗菌性能的耐蚀膜层,通过XRD、SEM、EDS等技术,对不同水热温度及时间条件下所制膜层的形貌及物相结构进行表征,结合电化学测试及抑菌试验,考察了水热条件对膜层耐蚀性和抗菌性能的影响。结果表明,Mg-2.4Nd-0.5Sr-0.3Zr合金表面膜层主要由层片状Mg(OH)_2和颗粒状Ag/Mg(OH)_2聚集混合组成,随着水热温度的升高及反应时间的延长,膜层厚度逐渐增加。电化学测试结果显示,膜层能有效改善合金的耐蚀性,且随着表面膜层厚度的增加,对应合金样品的耐蚀性增强。此外,经过水热处理制得的合金样品在金色葡萄球菌培养24h后,产生了明显的抑菌圈,表现出了良好的抗菌效果。     

Effects of substrate temperature and ambient oxygen pressure on growth of Ba(Fe1/2Nb1/2)O3 thin films by pulsed laser deposition

Ba(Fe1/2Nb1/2)O3 thin films were grown on Pt/TiO2/SiO2/Si substrates with pulsed laser deposition (PLD) at temperatures ranging from 823 to 923 K with the varied ambient oxygen pressure. X-ray diffraction (XRD) data confirmed the single phase of polycrystalline Ba(Fe1/2Nb1/2)O3 thin films. The effects of substrate temperature and ambient oxygen pressure on the surface morphologies of the thin films were investigated by atomic force microscopy (AFM) and the growth dynamics of thin films was discussed. Larger grains and denser surface morphologies were observed with increasing substrate temperature. While finer grains were produced with increasing ambient oxygen pressure due to more frequent collisions between the ejected species and ambient oxygen molecules. The influence of the substrate temperature and ambient oxygen pressure on the dielectric properties was also discussed. Improved dielectric constant and decreased dielectric loss was observed for the thin film deposited at evaluated temperature.     

化学溶液法合成La0.5Sr0.5TiO3导电薄膜的研究

采用化学溶液沉积法制备了La0.5Sr0.5Ti O3(LSTO)外延薄膜作为第二代高温超导带材YBCO涂层导体的缓冲层.以乙酸镧、碳酸锶和钛酸丁酯为前驱物,配制了La离子浓度为0.14 mol/L的前驱液,经旋转涂覆和适当的热处理制得LSTO薄膜.对薄膜前驱粉末进行了热重与差热分析,确定了LSTO的合成过程.X射线衍射分析表明,在840,890℃恒温60 min的热处理后样品薄膜为单相的LSTO,具有明显的(100)择优生长取向,缓慢升温更有利于LSTO薄膜的结晶.扫描电镜结果表明:LSTO薄膜表面光滑致密,采用四探针法测得薄膜电阻率约为1×10-2Ω.cm.这种方法制取的LSTO薄膜电阻率小,外延性好,可作为YBCO涂层导体的导电缓冲层.     

Influence of target-substrate distance and sputtering power on chromium oxide films prepared by medium-frequency magnetron sputtering

Chromium oxide films were deposited on Si (100) substrates by medium-frequency (MF) unbalanced magnetron sputtering at different target-substrate distances D _TS (60, 100, 120 mm) and sputtering power (2.8, 5.6, 11.2 kW), respectively. The structure, surface morphologies, and microhardness of the chromium oxide films were examined by X-ray diffraction (XRD), atomic force microscopy (AFM), and microhardness tester. The results indicate that elevated MF sputtering power can improve the crystallization of the films; The D _TS value affects the structure of the films by changing the preferential orientation from CrO₃ (221) to Cr₂O₃ (116); The microhardness of the chromium oxide films is found to increase with the sputtering power. For preparing the Cr₂O₃-dominated films with comparatively high-performance, the optimized condition is the target-substrate distance of 100 mm and MF sputtering power of 11.2 kW.     

Electrical and band-gap properties of amorphous zinc–ind ium–tin oxide thin films

Zinc–indium–tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%,50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In22xZnxSnxO3, where x=0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.     

Simple method to rapidly fabricate chain-like carbon nanotube films and its field emission properties

A simple process to fabricate chain-like carbon nanotube (CNT) films by microwave plasma-enhanced chemical vapor deposition (MPCVD) was developed successfully. Prior to deposition, the Ti/Al₂O₃ substrates were ground with Fe-doped SiO₂ powder. The nano-structure of the deposited films was analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The field electron emission characteristics of the chain-like carbon nanotube films were measured under the vacuum of 10-5 Pa. The low turn-on field of 0.80 V/μm and the emission current density of 8.5 mA/cm2 at the electric field of 3.0 V/μm are obtained. Based on the above results, chain-like carbon nanotube films probably have important applications in cold cathode materials and electrode materials.     

化学溶液沉积法制备BiFeO_3薄膜的结构及性能研究

采用化学溶液沉积法在ITO玻璃基片上制备铁酸铋Bi Fe O3薄膜。薄膜呈纯钙钛矿结构,无杂相生成。此外,薄膜表面光滑致密、没有微裂痕。薄膜得到的晶粒尺寸较小,约为45 nm。在550℃1 h退火的薄膜有良好的电学特性,在1 k Hz频率下测得的相对介电常数、损耗因子分别约为198、3%;此外,在760 k V/cm电场驱动下,薄膜得到的剩余极化(2Pr)约为25μC/cm2,矫顽电场(2Ec)约为650 k V/cm。BFO薄膜在550℃退后,通过吸收光谱分析得到BFO薄膜的光学带隙为2.7 e V。这些结果表明,退火温度550℃制备的Bi Fe O3固溶体薄膜具有较好的性能,有望成为光电器件的候选材料。     

Dielectric properties of low dielectric constant Ba0.60Sr0.40Mg0.15Ti0.85O3-Mg2TiO4 composite thin films for tunable applications

Ba0.60Sr0.40Mg0.15Ti0.85O3-xmol%Mg2TiO4 （x = 0-40 mol%） （BSTM-MT） composite thin films were fabricated by sol-gel method. The precursor solution of these composite thin films was prepared through mixing the Ba0.80Sr0.40Mg0.15Ti0.85O3 and Mg2TiO4 solution. The microstructures and dielectric tunability of composite thin films were investigated. The dielectric constant of composite thin films can be tailored from 155 to 55 by changing the concentration of Mg2TiO4. The dielectric loss of these composite thin films were still kept below 0.01 and the tunability was above 20% at a dc-applied electric field of 500 kV/cm. Suitable dielectric constant, low dielectric loss, and high tunability of this kind of composite thin films can be useful for potential microwave tunable applications.