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氧气气氛下退火温度对BST薄膜结构及物理性能的影响
引用本文:娄建忠,李俊颖,代鹏超,孙杰,刘保亭.氧气气氛下退火温度对BST薄膜结构及物理性能的影响[J].河北大学学报(自然科学版),2011,31(5):480-485.
作者姓名:娄建忠  李俊颖  代鹏超  孙杰  刘保亭
作者单位:1. 河北大学电子信息工程学院,河北保定,071002
2. 河北大学电子信息工程学院,河北保定071002;河北大学物理科学与技术学院,河北保定071002
3. 河北大学物理科学与技术学院,河北保定,071002
基金项目:河北省教育厅科学研究计划(2007416); 河北省科学技术厅科学技术研究与发展指导计划(07215154); 河北大学博士基金(y2006091,y2007091)
摘    要:利用溶胶凝胶法在Pt/TiO2/SiO2/Si (001)衬底上制备了(~70 nm)的Ba0.6Sr0.4TiO3 (BST)薄膜,采用磁控溅射法构建了Pt/BST/Pt/TiO2/SiO2/Si (001)电容器,研究了在氧气气氛中不同退火温度对BST薄膜结构及物理性能的影响.结果发现,650℃退火样品具有良好的结...

关 键 词:BST薄膜  溶胶凝胶  常规退火

Influence of Annealing Temperature Under Oxygen Atmosphere on Structure and Physical Properties of the Thin Films for BST
LOU Jian-zhong,LI Jun-ying,DAI Peng-chao,SUN Jie,LIU Bao-ting.Influence of Annealing Temperature Under Oxygen Atmosphere on Structure and Physical Properties of the Thin Films for BST[J].Journal of Hebei University (Natural Science Edition),2011,31(5):480-485.
Authors:LOU Jian-zhong  LI Jun-ying  DAI Peng-chao  SUN Jie  LIU Bao-ting
Institution:LOU Jian-zhong1,LI Jun-ying1,2,DAI Peng-chao1,SUN Jie1,LIU Bao-ting2(1.College of Electronic and Informational Engineering,Hebei University,Baoding 071002,China,2.College of Physics Science and Technology,China)
Abstract:Ba0.6Sr0.4TiO3(BST) thin films,70 nm thick,were deposited on Pt/Ti/SiO2/Si(001) substrates by sol-gel method,and Pt/BST/Pt/TiO2/SiO2/Si(001) capacitors were fabricated using magnetron sputtering technique.The influence of annealing temperature in flowing oxygen on the microstructure and physical properties of BST thin films were investigated.It is found that BST films have better crystalline quality and physical properties after annealed at 650 ℃,and the leakage current density of Pt/BST/Pt/TiO2/SiO2/Si(001) capacitors is 3.06×10-6 A/cm2 at 200 kV/cm.
Keywords:BST thin films  sol-gel  conventional annealing  
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