CRISPR-Cas9系统定向编辑TCR基因的sgRNA筛选

为构建靶向T细胞抗原受体(T Cell Receptor,TCR)基因的CRISPR-Cas9基因组编辑系统,基于p X458质粒构建靶向TCR基因β链C区的CRISPR-Cas-sgRNA质粒,将其转染Hep G2细胞系,用流式细胞术检测转染效率;转染48 h后提取Hep G2细胞基因组DNA,扩增含有编辑位点的片段,测序分析该片段的峰图改变;对出现双峰的扩增片段做T-A克隆后测序分析,确定基因编辑发生的位置,并结合转染效率计算基因编辑效率.结果表明,成功构建含有3种sgRNA序列(N1、N2、S1)的p X458-sgRNA质粒,其转染效率分别为38.5%(N1)、39.7%(N2)和24.2%(S1);基因组PCR产物测序分析发现,S1组扩增片段在打靶位置出现杂峰;T-A克隆测序发现,20克隆有4个发生了基因编辑(20%),结合转染效率(24.2%)可知,编辑效率约为83%.可见,本文成功构建靶向TCR基因的CRISPR-CassgRNA质粒,并鉴定出基因编辑效率较高的一种sgRNA序列.     

Giant magneto resistance and temperature coefficient of resistance in Sm0.55Sr0.30Ag0.15MnO3 perovskite

Silver ions substituted samarium strontium manganite (Sm0.55Sr0.30Ag0.15MnO3) pervoskite was synthesized by using respective oxides in stoichiometric ratio through solid state reaction. The as-prepared sample was characterized by various analytical techniques to confirm its formation and understand the effect of monovalent silver ions in pervoskite lattice. X-ray diffraction pattern confirms the single phase formation while grain morphology in SEM image indicates good connectivity among the grains. The enhancement in metal to insulator transition temperature shows quenched disorder and magnetoresistance phenomena. The magnetoresistance (MR) and temperature coefficient of resistance (TCR) emerge from grain growth factor and homogeneity induced by Ag+ ions in the lattice. The reduction in hysteresis loss resulted from antiferromagnetic - ferromagnetic (TN) and ferromagnetic - paramagnetic (Tc) transitions reveals the removal of disorder in perovskite lattice by Ag+ ions substitution. This increases the magnetic moment across distinct ions on the applying magnetic field. The rise in MR% (~99%) with silver doping emerging from smooth spin tunneling of the grains across the boundary and suppression of the disordered magnetic fluctuations with increase in magnetic field has been reported. The present compound exhibits the first order nature of magnetism and observed first time the highest value of TCR ~ 95%.     

一种带有时序参数的分组密码

通过将系统时间和数据组号混合到轮密钥之中,可以有效地防止一些对分组密码算法的攻击．文中探讨了这类实用的密码算法方案的一般模式．由于变更部分轮密钥通常比若干轮变换快很多,这类方案会有明显的效率优势．在安全方面,由于加密时所有明文组几乎都各自使用了不同的轮密钥,而绝大数攻击方法需要一定数量相同密钥加密的明密文对,从而使这些攻击方法不能奏效．这也许会导致这类带有时间组号参数的分组算法在减少迭代轮情况下仍然是安全的．做为例子,给出了一个在安全和效率方面均有良好性能的密码算法TCR6．     

TCR控制及数学模型的研究

阐述了微机无功动态补偿器中ＴＣＲ晶闸管控制线性电抗器的控制原理，并对其数学模型的建立进行了讨论．     

一种高温下测量薄膜电阻温度特性的方法

介绍了Rymaszewski四探针法测薄膜方块电阻原理,设计并搭建了可测室温到550℃的四探针测试仪。该系统可在保护气体下变温测量薄层电阻,弥补了四探针法在较高温度测量薄膜电阻率的不足。制备并测试了多晶硅及铂薄膜的电阻温度特性,用多项式拟合了在该温度范围内电阻温度系数,并分析了方法可靠性。     

化学沉积Ni—P膜电阻器热处理工艺研究

研究热处理工艺对化学沉积金属膜电阻器的温度系数和潮湿系数的影响。发现热处理工艺可使Ni-P膜电阻器获得优良的电性能。对热处理前后的Ni-P膜层做了电子衍射分析,探讨了热处理前后的微观结构。     

矢量控制在动态无功补偿控制器中的应用

针对电弧炉、电焊机等冲击性负荷造成电压谐波、闪变,影响电网供电质量的现象,设计了一种采用矢量控制的TCR(晶闸管控制电抗器)型动态无功补偿控制器。通过矢量变换控制实时补偿三相负荷的无功电流,以抑制电网的电压波动、三相不平衡和谐波污染,从而提高电能质量。样机试验表明,该方法可以有效稳定电网电压,提高电网供电质量。     

静止无功功率补偿装置设计

阐述了静止无功补偿装置（SVC）的工作原理和控制模式，将设计的实用方案成功用于某轧钢厂无功补偿和谐波滤波改造，并指明了这类静止无功补偿装置的不足。     

Effect of MTECl on the functional expression of TCRαβ~ + 3G11~- 6C10~-CD4~+CD8~- thymocyte subset

A murine CD4+ thymocyte subset with phenotype of TCRαβ + 3G11- 6C10- CD4 + CD8- CD69 +/- HSAmed/locontains the cells in relatively functional matured status. The functional property of the cells in this subset is characterized by the unique pattern of cytokine production at transitional stage from Th0 to Th2 type with the latter being the dominant type. After being co-cultured with murine thymic medullary epithelial cell line (MTEC1) cells, a murine thymic medullary type epithelial cell line, the TCRαβ(T 3G11 6C10-CD4 + CD8- CD69+/- HSAmed/l? thy-mocytes, has exhibited significantly higher levels of proliferation capability and IL-6 production, whereas the production of IL-4 and IL-10 is suppressed after co-culturing with MTECl. By contrast, MTECl could not induce thymocytes to secrete Th1 type of cytokines. The results suggest that MTECl can regulate functional status of this thymocyte subset and induce them to develop into a specialized Th2 subset.     

Anomalous transport characteristics of Fe X Cu1-X granular film

The transport characteristics of FexCu1 - x granular film fabricated by rf magnetron sputtering is introduced. In a wide temperature range from 12 to 290 K the granular film exhibits an evident negative temperature dependence of resistivity. The temperature coefficient of resistance of the granular film will change its sign from negative to positive with the deposition time, the annealing condition and the atom ratio of iron to copper respectively. When the atom ratio X equals 0.64 and the deposition time is 1 min, an anomalous big negative temperature coefficient of resistance appears in our sample. XRD shows that the structure of the granular film is like amorphous, so a preliminary explanation is given according to amorphous alloy theory.