新一代存储技术:阻变存储器

阻变存储器具有存储单元结构简单、工作速度快、功耗低、有利于提高集成密度等诸多优点,受到广泛的关注。作者论述了 RRAM 的基本结构和工作原理, 并介绍了三维集成和多值存储等 RRAM 新型技术。     

Bleaching effect and nonvolatile holographic storage in doubly doped LiNbO<Subscript>3</Subscript>:Fe:Cu crystals

The bleaching effect, i. e. the crystal shows that decoloration after it is illuminated by ultraviolet light, has been observed in congruent LiNbO3:Fe :Cu crystals. Based on this bleaching effect, a new technique including the reco rding phase by two interfering red beams and fixing phase by both UV light and a coherent red beam has been experimentally investigated to realize nonvolatile holographic storage in LiNbO3:Fe:Cu. The results of proof-of-concept experiments confirm that bleaching effect becomes an alternative physical mechanism for nonv olatile holographic storage with high recording sensitivity and weak light-induced scattering noise.     

混合溶剂沸点增高规则及其在汽液平衡中的应用

介绍混合溶剂中溶入少量不挥发溶质后液相沸点及其蒸气压变化所遵循的普遍性规律——混合溶剂沸点增高规则．该规则的实质是热力学定律在汽液平衡现象中的推论,其数学表达式为不挥发溶质对汽液平衡影响的基本热力学方程．并就该方程在汽液平衡盐效应研究中的应用进行了评述与讨论     

非易失存储器数据安全性研究

在应用非易失存储器AT24C64过程中，发现丢失数据的原因是由于CPU在上电与断电过程中，欠电压导致CPU失控，输出端口产生无数个干扰脉冲，干扰脉冲的组合生成了AT24C64的有效写命令，于是破坏了AT24C64的数据．该研究从两方面采取措施：（1）使用CD4051，CD4024的组合条件来控制AT24C64的写允许门-↑WTP，如同给写允许门—-↑WP加锁；（2）采用上电与断电时电压监测电路，一旦电源电压低于4．7V时，使CPU复位，消除CPU失控状态，以保证AT24C64的3根信号线稳定，进而保证了内部数据的安全性．     

Preparation of BST nanocrystals embedded in SiO<Subscript>2</Subscript> film by magnetron sputtering for nonvolatile memory applications

We develop a method that uses magnetron sputtering to fabricate barium strontium titanate (BST) nanocrystals embedded in dielectric SiO2 films.Transmission electron microscope images show that the BST nanocrystals have an average diameter of 5 nm and are well distributed in the SiO2 film.In addition,we also analyze the BST nanocrystals composition deviation during the sputtering process by electron dispersive spectroscopy.     

白酒风味物质分析研究进展

白酒是有着数千年历史的传统发酵饮料,在中国的饮食文化中有非常重要的作用。系统的探讨了白酒中挥发性风味化合物和非挥发性风味化合物的分析方法,以及白酒中风味化合物相互作用的研究现状。白酒中的挥发性风味化合物之间会产生加成作用、协同作用、掩盖作用或无相互作用,分析这些相互作用的方法有很多,主要有S型曲线法、OAV法、σ-τ图法、分配系数法、矢量模型法以及PDE模型法。有研究通过S型曲线法发现烷基硫醚对酱香型白酒的水果香味有协同作用等；通过OAV法对茅台酒的研究表明:己酸乙酯与乳酸乙酯、乙酸乙酯这两组混合物分别发生了协同作用等,而乙酸乙酯和乳酸乙酯的混合物发生了加成作用等；用σ-τ图法分析了清香型白酒中醛酮类物质和醇类物质间相互作用,醇类物质基本发生掩盖作用,而己醇和苯甲醇则不发生相互作用,醛酮类物质发生协同作用等；通过分配系数法发现白酒中高浓度的2-苯乙醇和1-丙醇可以抑制3-甲基丁酸的释放,并且1-丙醇对3-甲基丁酸的影响要大于2-苯乙醇等；利用矢量模型法研究发现:混合物的香气强度与单个组分的香气强度之和存在良好的线性关系等；PDE模型法对白酒中混合物的香气强度有很好的预测性能。每种方法都有自己的优缺点,相互验证会使研究结果更准确。     

CuO薄膜的阻变存储特性

利用等离子体辅助的分子束外延设备在SrTiO3掺Nb（Nb：STO）的衬底上制备了双层的Cu2O/CuO薄膜,经过测量其电流电压特性,发现Pt/Cu2O/CuO/Nb：STO器件的阻变存储特性非常显著,而且可重复程度高,适合多次数据写入与擦除,有望应用于信息存储领域.     

Performance and Reliability of Multilayer Silicon Nanocrystal Nonvolatile Memory

Nonvolatile memories (NVMs) with triple layers of silicon nanocrystals were fabricated with conventional CMOS technology.This paper explores the program/erase performance and reliability of NVMs with three layers of nanocrystals.The results indicate that the nanocrystals in the triple-layer nanocrystal NVM (NCNVM) are difficult to fully charge during the programming process.The programming speed of the triple-layer NCNVMs is quicker than that of single-layer NCNVMs,which means that the second and third layers of nanocrystals in the triple-layer NCNVM affect the charge of the first layer nanocrystals.Reliability tests show that the memory window has little degradation after 1×104 cycles.     

有机/聚合物电存储器及其作用机制

有机电存储是近几年来有机电子学与信息存储交叉领域的研究热点. 本文介绍了有机电存储器的基本概念与原理, 分类论述了有机/无机纳米杂化电双稳态材料、有机/聚合物电双稳态材料以及有机金属配合物电双稳态材料的最新研究成果, 讨论原型动态随机存储器、一次写入多次读取存储器以及非易失性闪存存储器的实现, 同时总结电开关与存储的形成机制, 主要包括场致电荷转移机制、丝状电导机制、构象转变与相变机制、载流子俘获释放机制以及氧化还原机制, 并展望今后的研究工作.     

Nonvolatile memory devices based on organic field-effect transistors

Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.