Nonvolatile memory devices based on organic field-effect transistors |
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| Authors: | Hong Wang YingQuan Peng ZhuoYu Ji Ming Liu LiWei Shang XingHua Liu |
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| Institution: | 1 School of Physics Science and Technology,Lanzhou University,Lanzhou 730000,China;2 Laboratory of Nanofabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | Among the many possible device configurations for organic memory devices, organic field-effect transistor (OFET) memory is
an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media. In this feature
article, the recent progress in the classes of OFET-based memory, including floating gate OFET memory, polymer electret OFET
memory, ferroelectric OFET memory and several other kinds of OFET memories with unique configurations, are introduced. Finally,
the prospects and problems of OFETs memory are discussed. |
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| Keywords: | organic nonvolatile memory organic field-effect transistors floating gate ferroelectric organic electret |
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