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1.
Mn2V2O7 thin films were deposited onto amorphous glass substrates using a chemical bath deposition method and different deposition time. X-ray diffraction(XRD) analysis was used to define the structure of the films. Their roughness, thickness, and surface properties were evaluated through atomic force microscopy(AFM). The hardness of the films was measured using a nanohardness tester. The film thickness, average grain size, and roughness were positively correlated with each other. These three parameters were observed to increase with the deposition time. The film thickness and average grain size were inversely correlated with the hardness and roughness. In addition, the number of crystallites per unit area and the dislocation density were observed to be positively correlated with the hardness and roughness. This study was designed to elucidate and formalize the underlying reasons for these relationships.  相似文献   

2.
Mn2V2O7 thin films were deposited onto amorphous glass substrates using a chemical bath deposition method and different deposition time. X-ray diffraction (XRD) analysis was used to define the structure of the films. Their roughness, thickness, and surface properties were evaluated through atomic force microscopy (AFM). The hardness of the films was measured using a nanohardness tester. The film thickness, average grain size, and roughness were positively correlated with each other. These three parameters were observed to increase with the deposition time. The film thickness and average grain size were inversely correlated with the hardness and rough-ness. In addition, the number of crystallites per unit area and the dislocation density were observed to be positively correlated with the hardness and roughness. This study was designed to elucidate and formalize the underlying reasons for these relationships.  相似文献   

3.
通过脉冲激光沉积方法在不同的氧压中制备ZnO 薄膜.用X射线衍射(XRD)谱、原子力显微镜(AFM)及光学透过率谱表征了薄膜的结构和光学特性.XRD谱和AFM显示在生长压力为2Pa时获得了较好的结晶薄膜,随着氧压的提升薄膜表面平整,晶粒均匀.光学透过率谱显示在生长压力为5Pa时有较好的光学特性.  相似文献   

4.
以低浓度的Zn(NO3)2为电解液、KCl为支持电解质,采用电沉积自组装法在氧化铟锡(ITO)玻璃基片上成功制备了尺寸可控、性能优异、具有强的C轴择优取向生长的纳米柱ZnO薄膜;并进一步获得了六方晶体纳米结构的ZnO薄膜的优化沉积工艺.同时,结合X射线衍射(XRD)、扫描电镜测试(SEM)、透射电镜(TEM)、紫外吸收光谱(UV-vis)等测试手段对薄膜的形貌、晶形及光学性能进行了系统表征.结果表明,制备的ZnO薄膜为六方纤锌矿结构,且沿[002]方向的择优生长趋势明显、物相纯正;该薄膜的透射率最大值可达75%,禁带宽度接近于3.28 eV.  相似文献   

5.
CuInSe2 films were electrodeposited onto indium tin oxide (ITO) substrate in constant current mode using bell-like wave modulated square wave in aqueous solution. The films obtained at different pulse frequencies were characterized by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). UV-Vis-NIR absorption spectro- scopy was used to study the optical properties of these films. The results showed that the chalcopyrite phase CuInSe2 films with a smooth surface and stoichiometric composition could be obtained at appropriate pulse frequency. The crystallinity of CuInSe2 films could be further improved after annealing treatment. Despite this, we also found that the films obtained using the pulse-plating electrodeposition technique had a faster deposition rate and better film adhesion ability than that using the traditional CIS elec-trodeposition technique, which is significant to the low-cost CIS thin film solar cell production.  相似文献   

6.
The paper reports our novel work on chemical vapor deposition coating of titanium nitride (TIN) thin film on glass for energy saving. TiN films were deposited on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) using titanium tetrachloride (TiCl4) and ammonia (NH3) as precursors. As a result, TiN films with a thickness of 500 nm were obtained. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), four-point probe method and optical spectroscopy were respectively employed to study the crystallization, microstructure, surface morphology, electrical and optical properties of the coated TiN films. The deposited TiN films are of NaCI structure with a preferred (200) orientation. The particles in the film are uniform. The reflectivity of the TiN coating in the near-infrared (NIR) band can reach over 40%, the visible transmittance is approximately 60%, and the visible refiectivity is lower than 10%. The sheet electrical resistance is 34.5 Ω. According to Drude theory, the lower sheet resistance of 34.5 Ω gives a high reflectivity of 71.5% around middle-far infrared band. The coated films exhibit good energy-saving performance.  相似文献   

7.
The effect of film thickness on the structural and optical properties of bisbenzimidazo [2,1-a:2′,1′-a′] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-10,21-dione (BI-diisoQ) films was carried out. The morphology of BI-diisoQ film showed a definite shape of a nanorod with a length of around 5 μm and a diameter of approximately 20 nm. Also, X-ray diffraction patterns demonstrated that BI-diisoQ thin films are characterized by a mixture of amorphous and crystalline structure, whereas the phase-nature crystallization of BI-diisoQ film enhanced as the film thickness increased. The investigation of the absorption coefficient of BI-diisoQ films revealed two indirect allowed band gaps energy. The calculated values of nonlinear optical parameters for BI-diisoQ film were observed to be increased with the increase of film thickness. The optical properties of BI-diisoQ nanorod films indicated that these films have appropriate optical properties, and thus it can be recommended as a promised candidate material in superconductors, optoelectronic and photonic applications.  相似文献   

8.
 采用射频磁控溅射方法制备了TiO2薄膜和La2O3掺杂的TiO2复合薄膜。利用扫描电子显微镜、X射线衍射,紫外可见光谱等材料表征方法研究La2O3掺杂对TiO2薄膜的结构及抗凝血性能的影响。结果表明:La2O3掺杂促使TiO2晶粒沿金红石相(110)晶面择优生长,能细化TiO2纳米晶粒的大小,使薄膜的光学带隙由2.85 eV提高到3.2 eV。血小板粘附实验表明La2O3掺杂的TiO2复合薄膜具有优良的血液相容性能;分析了复合薄膜的抗凝血机理。  相似文献   

9.
利用磁控溅射法在BaF2(111)单晶衬底上生长了PhTe薄膜,通过原子力显微镜(AFM)、X射线衍射(XRD)、傅里叶红外透射谱(FTIR)表征了溅射PbTe/BaF2(111)薄膜的微结构和光学特性.测量结果显示:溅射生长的PbTe/BaF2(111)薄膜表面由规则金字塔形岛和三角形坑组成的纳米颗粒构成,且薄膜沿〈111〉取向择优生长,其晶粒大小与表面纳米颗粒大小接近.室温下傅里叶红外透射谱及其理论模拟表明溅射生长的PbTe薄膜光学吸收带隙(Eg=0.351eV)出现蓝移,与PbTe纳米晶粒的尺寸效应有关.  相似文献   

10.
为探究不同氩气流量对TiOx薄膜结构和光学性能的影响,采用常温反应磁控溅射法,在K9双面抛光玻璃基底上制备TiOx薄膜样品,利用X线衍射分析样品的晶体结构,通过原子力显微镜观察样品表面结构,使用光栅光谱仪测试样品透射率,并计算得到薄膜沉积速率和消光系数等光学参数.实验结果表明:氩气流量对TiOx薄膜的光学性能具有较为明显的影响,随着氩气流量的增加,薄膜的光学厚度和沉积速率随之增加,而折射率有微小增加,消光系数受氩气流量的影响不大.  相似文献   

11.
Fluorapatite protective films were prepared on marble substrates using a biomimetic method. By mimicking the mineralization mechanism of enamel, phosphorus and fluorine were introduced on the surface of the marble substrate. In the presence of a biological template, namely collagen, an integrated fluorapatite film was produced and the marble substrate was entirely covered. The prepared fluorapatite films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy dispersive X-ray (EDX) spectroscopy. The performances of the fluorapatite films were evaluated by color changes, capillary water absorption, and acid resistance tests. The results revealed that the fluorapatite films had good compatibility with the marble substrate; the physical properties such as color and capillary water adsorption of the marble substrates were unchanged. The fluorapatite films also had good acid resistance and were stable even in heavy acid rain.  相似文献   

12.
以钛酸丁酯(C16H36O4Ti)和硫脲(SC(NH2)2)为前驱体制备溶胶,通过旋涂方法制备Ti O2光催化剂薄膜;利用XRD、SEM、XPS、UV-vis等手段进行结构表征和光吸收性能测试,并通过降解亚甲基蓝溶液评定其可见光下的光催化活性。结果表明,以硫脲为前驱体时可实现硫氮元素在Ti O2中的共掺杂;掺杂后的Ti O2薄膜对可见光有明显的吸收,并在可见光下对亚甲基蓝溶液显示出较高的降解率,其中掺杂量质量分数为3.0%的薄膜样品光催化活性最好。在本实验条件下,经可见光照射7 h后,亚甲基蓝溶液降解率接近100%。分析表明,硫元素以S6+状态取代Ti4+存在于Ti O2晶格,氮元素则以间隙和取代的方式存在。硫氮元素的协同作用在Ti O2的禁带中引入杂质新能级,使Ti O2带隙变窄,因此对可见光吸收并显示出强的可见光催化活性。  相似文献   

13.
低温生长纳米ZnO薄膜的结构   总被引:1,自引:1,他引:0  
采用气体放电活化反应蒸发技术(GDARE),以玻璃为衬底,在较低的温度下沉积纳米ZnO薄膜,用二次蒸镀法克服薄膜生长饱和问题、有效增加膜厚及改善薄膜质量。讨论了GDARE法低温下沉积纳米ZnO薄膜的生长过程及成膜机理。由原子力显微镜(AFM)和X-射线衍射谱(XRD)分析薄膜表面形貌和晶体结构,研究结果表明,二次蒸镀法沉积的双层纳米ZnO薄膜具有更好的结晶质量及长期稳定性,薄膜沿C轴高度取向生长,内应力较小,晶粒尺寸均匀,平均粒径约35nm,表面粗糙度降低。  相似文献   

14.
氧化锌透明导电膜的光电性能研究   总被引:1,自引:0,他引:1  
采用磁控溅射法在载玻片上制备出Al3 掺杂型ZnO透明导电薄膜.对不同厚度薄膜的光电性能进行了研究.结果表明,所制备的薄膜随着厚度的增加,透过率略有下降;ZnO薄膜在可见光区的吸光度很小,对可见光几乎不吸收.  相似文献   

15.
用脉冲激光沉积法(PLD)在硅(100)衬底上制备了c轴取向的高质量的ZnO薄膜.分析了不同激光频率下薄膜的结晶状况,通过对薄膜的PL谱的测试,分析了不同激光频率下薄膜的发光特性状况,同时进行了薄膜结构的测试.结果显示:激光频率为3 Hz的样品结晶质量较高,具有很高的c轴择优取向,同时发光性能达到相对优化.  相似文献   

16.
用改进的溶胶-凝胶技术,在硅和石英衬底上制备了不同浓度的Nd掺杂Ba0.80Sr0.20TiO3薄膜,应用XRD和SEM表征了薄膜的晶化行为和微观形貌.测试发现700℃退火后,薄膜晶化情况良好,具有典型的多晶钙钛矿结构,表面致密,无裂纹和孔洞,晶粒生长均匀,随着Nd掺杂量的增加,晶粒尺寸逐渐减小.在200~1 000 nm的波长范围内测试了薄膜的透射谱,用"包络法"计算了薄膜的折射率,薄膜折射率与波长呈现典型的电子带间跃迁的色散关系,波长为400 nm时,1%Nd(按物质的量计算百分比)掺杂的BST薄膜的折射率为2.06,小于纯BST薄膜的折射率2.10,这是由于Nd掺杂引起薄膜内部应力变化造成薄膜折射率降低.由吸收谱和Tauc关系确定了Nd掺杂对薄膜的光学带隙的影响.  相似文献   

17.
真空蒸发法制备CdS薄膜及其性能研究   总被引:2,自引:0,他引:2  
用真空蒸发法制备了CdS薄膜,用扫描电镜、X射线衍射仪、紫外-可见光分光光度计、四探针对薄膜的形貌、结构、光电性能进行分析测试.研究结果表明,不同基片温度下所制备的CdS薄膜主要为六方相,CdS薄膜在(002)晶面有高度的择优取向;不同基片温度下的薄膜对可见光的透光率都超过70%;薄膜的电阻率随基片温度的升高而增大;基片温度为50℃时薄膜的Eg为2.41 eV;在200℃退火处理改善了CdS薄膜的质量,结晶度提高,电阻率降低,晶粒尺寸增大;基片温度为50℃时薄膜在200℃退火后的电阻率为255Ω.cm.  相似文献   

18.
采用溶胶-凝胶法在玻璃基体上制备了ZnO和Fe掺杂ZnO薄膜,并通过扫描电子显微镜、原子力显微镜、X射线衍射仪和紫外-可见分光光度计对所制备薄膜的表面形貌、结构和光学性能进行分析。结果表明,2种薄膜均表面光滑,为沿(101)晶面取向的纤锌矿结构;与ZnO薄膜相比,Fe掺杂ZnO薄膜表面更光滑,且晶粒尺寸从58.512nm减小到36.460nm;另外,Fe掺杂后,沿(101)晶面的取向程度减弱,且禁带宽度由3.1eV增大到3.4eV。  相似文献   

19.
用三源共蒸法以高纯的Cu,In,Se粉为原材料制备了CuInSe2薄膜,研究了基片温度、退火处理对薄膜形貌、结构、光学及电学性能的影响.用扫描电镜、X射线衍射仪、紫外-可见分光光度计、霍尔效应仪对薄膜的形貌、结构、光学及电学性能进行检测.研究结果表明:不同基片温度下的薄膜对可见光都具有较高的吸收指数;薄膜在(112)晶面有高度的择优取向;基片温度为200℃时薄膜的Eg为0.99 eV;基片温度为200℃和300℃时薄膜都获得了单一黄铜矿结构的CuInSe2,退火处理后电阻为1.53Ω/cm2和1.55Ω/cm2.  相似文献   

20.
Cerium sulfide(Cex Sy)polycrystalline thin film is coated with chemical bath deposition on substrates(commercial glass).Transmittance,absorption,optical band gap and refractive index are examined by using UV/VIS.Spectrum.The hexagonal form is observed in the structural properties in XRD.The structural and optical properties of cerium sulfide thin films are analyzed at different p H.SEM and EDX analyses are made for surface analysis and elemental ratio in films.It is observed that some properties of films changed with different p H values.In this study,the focus is on the observed changes in the properties of films.The p H values were scanned at 6–10.The optical band gap changed with p H between 3.40 to 3.60 e V.In addition,the film thickness changed with p H at 411 nm to 880 nm.  相似文献   

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