柔性显示基板材料研究进展

随着显示技术的不断发展,柔性显示以其质轻、可轻薄化、耐用和可收卷等优点,成为最具发展潜力的下一代显示技术. 柔性显示技术的实现除了要求现有的设计和制造工艺进行改进之外,更加对加工和使用过程中材料的性能提出了新的要求,其中,柔性基板作为柔性显示器件的重要组成部分,基板材料要求具有良好的光学透明度、柔韧性、热稳定性和阻水阻氧等特性,因此,开发出具有优异的综合性能的基板材料成为实现柔性显示的关键环节. 目前,可以作为柔性显示基板的材料包括聚合物基板、超薄玻璃基板、不锈钢基板、纸质基板和生物复合薄膜基板,以前3种最常用. 文中针对近年来柔性显示基板材料的研究状况,从光学透明度、热稳定性、机械性能、阻水阻氧性能和表面平坦性等方面对这5种基板材料的性能进行了比较,聚合物基板相较于超薄玻璃基板和不锈钢基板,不仅具有透明、柔性、质轻的优点,而且耐用性优良,被公认为具有非常广阔的应用前景,并对聚合物基板的研究进行了展望.     

Microdomain patterns from directional eutectic solidification and epitaxy

Creating a regular surface pattern on the nanometre scale is important for many technological applications, such as the periodic arrays constructed by optical microlithography that are used as separation media in electrophoresis, and island structures used for high-density magnetic recording devices. Block copolymer patterns can also be used for lithography on length scales below 30 nanometres (refs 3-5). But for such polymers to prove useful for thin-film technologies, chemically patterned surfaces need to be made substantially defect-free over large areas, and with tailored domain orientation and periodicity. So far, control over domain orientation has been achieved by several routes, using electric fields, temperature gradients, patterned substrates and neutral confining surfaces. Here we describe an extremely fast process that leads the formation of two-dimensional periodic thin films having large area and uniform thickness, and which possess vertically aligned cylindrical domains each containing precisely one crystalline lamella. The process involves rapid solidification of a semicrystalline block copolymer from a crystallizable solvent between glass substrates using directional solidification and epitaxy. The film is both chemically and structurally periodic, thereby providing new opportunities for more selective and versatile nanopatterned surfaces.     

Self-assembly of micro parts on normal glass substrate

Fluidic self-assembly is an approach by which micro parts less than one millimeter in size can be driven by the capillary force of a certain adhesive liquid and be fixed onto the desired sites on some substrates. Normal glass with the composition of Na2SiO3CaSiO34SiO2 has been widely used in fluidic microelectromechanical systems (MEMS) and bio-MEMS devices. We investigate the MEMS self-assembly experiment on normal glass substrate. The results of scanning electron microscopy (SEM) show that micro-parts of 400 μm400 μm squares can be precisely assembled in the expected area of the normal glass substrate.     

Ultralow-power organic complementary circuits

The prospect of using low-temperature processable organic semiconductors to implement transistors, circuits, displays and sensors on arbitrary substrates, such as glass or plastics, offers enormous potential for a wide range of electronic products. Of particular interest are portable devices that can be powered by small batteries or by near-field radio-frequency coupling. The main problem with existing approaches is the large power consumption of conventional organic circuits, which makes battery-powered applications problematic, if not impossible. Here we demonstrate an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc). The monolayer dielectric is grown on patterned metal gates at room temperature and is optimized to provide a large gate capacitance and low gate leakage currents. By combining low-voltage p-channel and n-channel organic thin-film transistors in a complementary circuit design, the static currents are reduced to below 100 pA per logic gate. We have fabricated complementary inverters, NAND gates, and ring oscillators that operate with supply voltages between 1.5 and 3 V and have a static power consumption of less than 1 nW per logic gate. These organic circuits are thus well suited for battery-powered systems such as portable display devices and large-surface sensor networks as well as for radio-frequency identification tags with extended operating range.     

新型紫外光引发气/固聚合反应体系

设计了一个紫外光引发的气/固聚合反应体系。通过紫外光引发和三乙醇胺/二苯甲酮体系引发的方法，在BOPP膜和玻璃表面分别直接获得了醋酸乙烯酯（VAc）聚合物。分析表明附着在BOPP膜上的聚合物层有一定程度的交联（可达46％），而玻璃表面的聚合物经溶解可完全滤过200目的金属网，分子量分布分别在6.0和4.0左右，两处的聚合物层的质量和分子量都随反应时间的延长而增加。温度升高不利于玻璃表面上聚合物分子量的增加而利于BOPP膜上附着的聚合物可滤过部分分子量的上升。针对以上两处聚合物层要比周围器壁上的聚合物在厚度上大得多的现象做了研究和解释。本文还根据BOPP膜上聚合物层有一定程度交联的现象改进了反应器，在BOPP膜上获得了交联度大于95相似文献   

靶衬间距对脉冲激光沉积薄膜均匀性的影响

以国产脉冲激光沉积设备(PLD-Ⅲ型)在玻璃衬底上沉积Ti O2薄膜为例,研究了PLD法制膜过程中靶衬间距对薄膜均匀性的影响.实验过程中,以Ti O2陶瓷片作为靶材,玻璃作为衬底,保持其他工艺条件(如单脉冲能量、脉冲频率、沉积脉冲总数、衬底温度等)不变,专门考察了不同靶衬间距下,Ti O2薄膜在整个衬底台平面区域的沉积分布状况.结果表明,按样品的表观灰度划分,薄膜沉积的相对均匀区可分为2～3个轴对称区域,分别对应不同的沉积速率和厚度;在一定范围内调节靶衬间距(3.00～7.00 cm),可使高速率沉积区逐渐由轴对称的圆环状变为中心大圆斑(直径约2.20 cm).结合PLD沉积原理与靶衬之间的几何关系,分析了导致上述结果的机理.     

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Nitride semiconductors are the materials of choice for a variety of device applications, notably optoelectronics and high-frequency/high-power electronics. One important practical goal is to realize such devices on large, flexible and affordable substrates, on which direct growth of nitride semiconductors of sufficient quality is problematic. Several techniques--such as laser lift-off--have been investigated to enable the transfer of nitride devices from one substrate to another, but existing methods still have some important disadvantages. Here we demonstrate that hexagonal boron nitride (h-BN) can form a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. The h-BN layer serves two purposes: it acts as a buffer layer for the growth of high-quality GaN-based semiconductors, and provides a shear plane that makes it straightforward to release the resulting devices. We illustrate the potential versatility of this approach by using h-BN-buffered sapphire substrates to grow an AlGaN/GaN heterostructure with electron mobility of 1,100?cm(2)?V(-1)?s(-1), an InGaN/GaN multiple-quantum-well structure, and a multiple-quantum-well light-emitting diode. These device structures, ranging in area from five millimetres square to two centimetres square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.     

Rare Earth Doped Polymer Waveguide Materials and Devices

1 Results Rare earth doped waveguide amplifiers and devices have been demonstrated in silica, crystal and other glass hosts. These rare earth doped optical waveguide devices are based on inorganic materials. Many processing steps are required and can lead to long fabrication time and low yield.Polymer materials offer many distinct properties compared to inorganic materials, such as ease of fabrication, low production costs, simple processing steps, and compatibility with micro-fabrication technologies. ...     

Morphology and Size Control of Cu2O Nanoparticles by Electro-deposition on Aluminum

The size and morphology of the Cu2O nanocrystals are crucial to improving the performance of photoelectric devices.In this paper,Cu2O nanocrystals have been deposited onto aluminum substrates.The effect of different applied potentials on the chemical composition,morphology and grain size has been investigated.Compared with previous work,it has been found that the potentials have strong effect on particle size,while the morphology changes only when the potentials over-0.5 V,but no other compositions such as CuO or Cu exist in the products,which could clarify the formation mechanism of the Cu2O nanocrystals.     

Nanomechanics: response of a strained semiconductor structure

The nanomechanical properties of thin silicon films will become increasingly critical in semiconductor devices, particularly in the context of substrates that consist of a silicon film on an insulating layer (known as silicon-on-insulator, or SOI, substrates). Here we use very small germanium crystals as a new type of nanomechanical stressor to demonstrate a surprising mechanical behaviour of the thin layer of silicon in SOI substrates, and to show that there is a large local reduction in the viscosity of the oxide on which the silicon layer rests. These findings have implications for the use of SOI substrates in nanoelectronic devices.     

应变调控柔性电子器件磁电性质的研究进展

柔性电子器件具有独特的形状可塑性,因而引起了人们极大的研究热情.柔性电子器件在未来或将成为下一代电子器件的重要分支,在电子显示、二极管、生物医疗器件、太阳能电池等领域有着广阔的发展前景.近些年,许多研究人员将柔性技术与自旋电子学相结合,开始探索应变对于生长在柔性衬底上的磁电异质结磁电性质的影响,通过改变柔性衬底的曲率等手段调控器件的磁电效应.相关基础研究为磁存储器、磁传感器、非易失性阻变存储器等电子器件的研究开辟了新思路.     

磷掺杂TiO2纳米粒子膜的负载及其太阳光催化降解亚甲基蓝

光催化剂的方便回收对于其降解有机污染物的应用是十分必要的.本项研究中,以硅酸钠为粘胶剂,在毛玻璃片上层层组装了多层磷掺杂TiO2粒子膜.扫描图片显示,厚度在几十微米的催化粒子膜牢固地覆盖在基片的粗糙面上.在太阳光照射5 h下,这样组成的复合体系几乎完全降解试验溶液中的亚甲基蓝;即使在循环利用10次以后,染料的降解率也高...     

氧化石墨烯墨水的制备及直写图案化

 采用改进的Hummers法制备宽度分布范围为30~70 μm的大尺寸氧化石墨烯及其墨水,并通过直写打印实验,研究了最佳打印条件和氧化石墨烯墨水直写图案化。结果表明,当氧化石墨烯浓度为15 mg/mL、打印压力为70 kPa、线速度为3 mm/s时,打印线条流畅,形貌精细可控;还原剂为15%氢碘酸、还原时间为3 h时,打印线条的还原程度最高,且电性能最佳,电导率可达4.40×10⁴ S/m,远超过现有打印技术的石墨烯图案电导率;实现了氧化石墨烯墨水在亲水聚对苯二甲酸乙二醇酯（PET）、聚二甲基硅氧烷（PDMS）、玻璃、硅片等多种柔性和非柔性基底上的图案化直写打印,且经还原处理的氧化石墨烯图案可作为连接导线实现发光二极管的集成,对于石墨烯基印刷电子器件的发展具有重要意义。     

Fabrication of carbon nanotube/graphene core/shell nanostructures on SiO2 substrates using organic solvents: A molecular dynamics study

Using molecular mechanics and molecular dynamics simulations,we demonstrate that it is difficult to fabricate single-walled carbon nanotube (SWNT)/carbon nanoscroll (CNS) core/shell nanostructures on solid substrates because of the strong interaction between the graphene (GN) and the substrate.We propose an effective way to reduce the interaction between the GN and the substrate;SWNT/CNS core/shell nanostructures can be fabricated easily on SiO2 substrates by exploiting the volatilization of organic solvents,and inducement with SWNTs.These SWNT/CNS core/shell nanostructures on SiO2 substrates have the potential to be applied in telecom network transmission,or as electronic components in apparatuses such as microcircuit interconnects,nanoelectronics devices,heterojunctions,or sensors.     

Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates

The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and polymer-based materials represent the most widely explored types of semiconductors for such flexible circuitry. Although these materials and those that use films or nanostructures of inorganics have promise for certain applications, existing demonstrations of them in circuits on plastic indicate modest performance characteristics that might restrict the application possibilities. Here we report implementations of a comparatively high-performance carbon-based semiconductor consisting of sub-monolayer, random networks of single-walled carbon nanotubes to yield small- to medium-scale integrated digital circuits, composed of up to nearly 100 transistors on plastic substrates. Transistors in these integrated circuits have excellent properties: mobilities as high as 80 cm(2) V(-1) s(-1), subthreshold slopes as low as 140 m V dec(-1), operating voltages less than 5 V together with deterministic control over the threshold voltages, on/off ratios as high as 10(5), switching speeds in the kilohertz range even for coarse (approximately 100-microm) device geometries, and good mechanical flexibility-all with levels of uniformity and reproducibility that enable high-yield fabrication of integrated circuits. Theoretical calculations, in contexts ranging from heterogeneous percolative transport through the networks to compact models for the transistors to circuit level simulations, provide quantitative and predictive understanding of these systems. Taken together, these results suggest that sub-monolayer films of single-walled carbon nanotubes are attractive materials for flexible integrated circuits, with many potential areas of application in consumer and other areas of electronics.     

离子液体在超疏水银膜表面的电润湿性能

利用银镜反应在玻璃基底上制备了粗糙银膜,组装烷基硫醇后得到超疏水银膜.研究了［Emim］［BF4］、［Bmim］［BF4］、［Hmim］［BF4］、［Hmim］［Br］和［Hmim］［OTf］等一系列离子液体和不同浓度KCl水溶液在超疏水银膜表面的电润湿性能,分析了离子液体中离子体积、离子液体液滴大小,以及超疏水表面组装层的分子结构对其电润湿性能的影响.结果表明,离子液体的电润湿性能与离子体积和电荷偏离有关,与液滴体积无关,相似电导率的离子液体与KCl水溶液具有相似的电润湿性.     

光照溶胶及基片对TiO2薄膜光催化性能的影响

用紫外光照射TiO2溶胶,以玻璃和铝片为载体,制备了光助TiO2薄膜,同时制备了非光助薄膜,通过降解4BS染料废水和工业印染废水,考察了薄膜的光催化活性.结果表明,光助薄膜的光催化活性明显提高,尤其是光助玻璃薄膜;基片的种类对薄膜的催化能力有很大的影响.本实验为优化选择基片及控制溶胶条件,制备高活性光催化剂及降低废水处理成本提供了有价值的参考.     

磁控共溅射法制备Zn_(1-x)Cr_xO薄膜及其结构性能

本文采用磁控共溅射方法在玻璃衬底上制备了Cr掺杂ZnO薄膜,通过改变Cr溅射功率,从而改变Cr的掺杂量.介绍了Zn1-xCrxO薄膜的制备方法,分别用X射线衍射(XRD)和X射线光电子能谱(XPS)对不同Cr溅射功率的一系列薄膜的结构,成份、元素含量及价态等性能进行了分析.结果表明,Cr溅射功率为20 W的样品,具有最好的c轴择优取向,Cr以+3价形式掺入薄膜中,Cr3+替代了部分Zn2+.     

掺银TiO2薄膜的制备及其光催化性能

采用Ｓｏｌ－ｇｅｌ法在玻璃板表面制得均匀的ＴｉＯ２薄膜,并利用光催化还原法镀银得到掺银ＴｉＯ２薄膜。用掺银的ＴｉＯ２薄膜和未掺银的ＴｉＯ２薄膜在高压汞灯和太阳光的照射下,对有机物苯酚水溶液进行催化光解研究。结果表明掺银ＴｉＯ２薄膜的光催化活性明显大于未掺银ＴｉＯ２薄膜,这是提高ＴｉＯ２光催化效率的可行方法。     

Ultrasoft,mass-permeable,and low-impedance hydrogels for tissue-like skin-device interfaces

Flexible devices constructed on ultrathin polymer substrates have emerged as outstanding candidates for wearable bioelectron-ics that have superiority in applic...