激光直接刻蚀图形的质量分析

在激光剥离机制的基础上，分析了激光直接刻蚀过程中，蒸气压及热传导对图形刻蚀质量的影响，并得出了刻蚀不同厚度Ａｌ的激光能量密度，脉冲频率和刻蚀脉冲数的最佳组合，对Ｔａｌｂｏｔ成像法中对比度对图形刻蚀质量的影响也进行了分析。     

紫外脉冲激光对聚氯乙烯（PVC）塑料刻蚀产物的研究

利用四极质谱和离子能量分析器，测定了紫外激光刻蚀ＰＶＣ塑料产生的分子、原子和离子产物的质量分布和各种离子的平动能分布，研究了激光通量对刻蚀的影响，发现离子的产生需要比中性产物有更高的激光阈值，讨论了紫外激光对ＰＶＣ塑料的刻蚀剥离机理。     

紫外脉冲激光泽聚氯乙烯（PVC）塑料刻蚀产物的研究

利用四极质谱和离子能量分析器，测定了紫外激光刻蚀ＰＶＣ塑料产生的分子，原子和离子产物的质量分布和各种离子的平动能分布，研究了激光通量对刻蚀的影响，发现离子的产生需要比中性产物有更高的激光阈值，讨论了紫外激光对ＰＶＣ塑料的刻蚀剥离机理。     

基于有限元法的片式电阻阻值与激光刻蚀路径关系的研究

激光对片式电阻的刻蚀路径直接影响片式电阻的阻值精度,掌握激光刻蚀路径对片阻阻值的影响可为精调片阻阻值提供理论依据.掌握激光刻蚀路径与片阻阻值关系的前提是确定准确、有效的研究方法,首先,应确定片阻阻值与激光刻蚀路径关系的物理模型,然后应用有限元法计算该物理模型的数值解,分析、处理这些数据可得到不同型号片阻阻值与不同刻蚀路径之间的定量关系;经实验验证表明,利用有限元法得到的片阻阻值与刻蚀路径的关系函数的计算偏差不大于2%,可以应用有限元法研究激光刻蚀路径对片阻阻值的影响,进而为精调片阻阻值提供了控制依据.     

亚微米级坡莫合金栅格研制

本文提出用激光干涉法制作亚微米级坡莫合金耦合栅格掩模,然后用FeCl_3溶液、等离子体两种刻蚀方法得到坡莫合金耦合栅格。文中对两种刻蚀方法进行了比较,讨论了得到高质量图形的工艺条件。     

激光技术在玻璃加工上的应用

介绍了激光加工的原理和激光加工的应用现状,着重分析了激光加工玻璃的实质以及影响激光加工玻璃的难易程度和加工质量的因素。指出利用激光进行光电微器件的刻蚀加工和利用激光进行高质量的艺术雕刻,是激光加工技术较有前途的发展方向。     

基于BP神经网络的刻蚀偏差预测模型

刻蚀是将设计版图转化为到晶圆图形的重要步骤,刻蚀质量的好坏直接关系到芯片或集成电路的性能,而影响刻蚀质量(蚀刻偏差)的孔径效应和微负载效应在很大程度上取决于版图密度、图案间距等布局特征。为了探究在固定刻蚀工艺参数下的版图特征对刻蚀偏差影响,本文提出了基于BP神经网络的刻蚀偏差预测模型。首先,对一维版图的特征提取并建立用于训练模型和测试模型的训练集与测试集,然后,训练和优化该BP神经网络模型。实验结果表明,该模型预测值的绝对误差可达±2 nm以下,而相对于真实刻蚀偏差的相对误差可达10%以下。因此在较大技术节点下,这种基于BP神经网络模型的预测精度是可以接受的。     

A_r~+激光诱导氯气刻蚀硅

本文通过被局域刻蚀硅表面形貌的精确测量,考察了刻蚀速率对于激光功率、波长、反应室气压的依赖关系,讨论了在不同光斑尺寸和刻蚀深度下反应机理的变化,给出了衬底晶向和表面氧化层对刻蚀效果影响的一些新的结果。     

MEMS中硅的深度湿法刻蚀研究

探讨用于MEMS硅湿法刻蚀的刻蚀液浓度、温度、添加剂种类和浓度对刻蚀速率及表面粗糙度的影响,优化得到最佳刻蚀条件,刻蚀速率较常用刻蚀条件时提高约3倍;用扫描电镜观察刻蚀后的表面形貌,结果显示优化刻蚀条件下硅表面粗糙度得到极大的改善.以优化的刻蚀条件进行深度刻蚀,蚀刻出深达236μm的窗口,图形完整,各向异性良好.     

镁合金表面激光刻蚀精密打标应用

镁合金具有比强度高、减振性和电磁屏蔽性好等优点,在电子产品上有越来越多的应用。镁合金电子产品的徽标及文字特征标识可以采用激光刻蚀打标方法,速度快、精度高、适应性广。针对激光种类及其参数对镁合金刻蚀的影响尚缺乏定量化的研究这一现状,本文利用光纤激光打标机进行打标实验,结合表面形貌的特征分析了激光种类和参数的影响,总结了镁合金激光精密打标技术的特点与应用。     

Resistless photochemical etching of a silicon wafer by UV laser with an H2O2 and HF aqueous solution

A new resistless etching method has been developed for Silicon wafers. This new method uses an aqueous solution consisting of hydrogen peroxide (H2O2) and hydrogen fluoride (HF) as the activating etchants. A 193 nm ArF excimer laser and a 266 nm fourth harmonic generation Nd:YAG laser were used as the photon sources. Results showed that pattern etching has been achieved without any photoresist film. In the case of the 193 nm laser, the optimal etching appeared at a 1.3 H2O2/HF ratio, where an etch depth of 210 nm was achieved with a fluence of 29 mJ/cm2 and shot number of 10000. At the same conditions, the etch depth with H2O2 and HF solution was three times of that by using H2O and HF mixture. In the case of the 266 nm Nd:YAG laser, the optimal etching appeared at twice ratio of H2O2/HF, where the etch depth of 420 nm was achieved with a fluence of 12 mJ/cm2 and shot number of 30000. Results showed that the etch effect of the 266 nm Nd: YAG laser was more desirable than that of the 193 nm ArF excimer laser.``Keyords: UV laser, resistless photochemical etching, hydrogen peroxide (H2O2).     

Resistless photochemical etching of a silicon wafer by UV laser with an H<Superscript>2</Superscript>O<Superscript>2</Superscript> and HF aqueous solution

A new resistless etching method has been developed for Silicon wafers. This new method uses an aqueous solution consisting of hydrogen peroxide (H₂O₂) and hydrogen fluoride (HF) as the activating etchants. A 193 nm ArF excimer laser and a 266 nm fourth harmonic generation Nd: YAG laser were used as the photon sources. Results showed that pattern etching has been achieved without any photoresist film. In the case of the 193 nm laser, the optimal etching appeared at a 1.3 H₂O₂÷HF ratio, where an etch depth of 210 nm was achieved with a fluence of 29 mJ/cm² and shot number of 10000. At the same conditions, the etch depth with H₂O₂ and HF solution was three times of that by using H₂O and HF mixture. In the case of the 266 nm Nd: YAG laser, the optimal etching appeared at twice ratio of H₂O₂/HF, where the etch depth of 420 nm was achieved with a fluence of 12 mJ/cm² and shot number of 30000. Results showed that the etch effect of the 266 nm Nd: YAG laser was more desirable than that of the 193 nm ArF excimer laser.     

InP材料UV激光直接刻蚀研究

利用UV激光的光解剥离(APD)效应,对半导体材料InP进行了直接刻蚀研究,获得了良好的结果。采用波长为308nm,光脉冲宽度20ns的XeCl)准分子激光器,APD刻蚀的光能量密度阈值为390mJ/cm~2;与理论结果相比较,两者具有良好的一致性。同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。     

红宝石晶体的偏振显微研究

对红宝石晶片进行了偏振光的干涉研究，用KOH化学腐蚀后，在显微镜下观察了晶体中的位错形貌及分布．     

The effect of laser irradiation on surface enhanced raman scattering for silver film

The laser irradiation effect on the SERS intensity for Ag film is discussed using crystal violet (CV) as a probe. The thickness of silver film, the etching time of the glass slide by gaseous hydrogen fluoride, and the laser irradiation time for different amounts of CV on silver films were investigated. The laser burn-out model was proposed to explain the dependence of the SERS intensity of CV on the laser irradiation time. Supported by the National Natural Science Foundation of China Sheng Rongsheng: born in Dec. 1935, Professor     

用聚焦离子束气体辅助刻蚀在 LiNbO3上制备亚微米圆孔点阵

使用聚焦粒子束(FIB) 在LiNbO₃上刻蚀用于光子晶体的亚微米圆孔二维点阵, 研究了刻蚀束流、刻蚀时间和填充率等刻蚀参数对刻蚀结果造成的影响。为获得更好的刻蚀效果, 还采用了FIB的气体辅助刻蚀方法(gas-assisted etching , GAE) 。研究发现,与直接刻蚀结果相比,GAE 减小了反沉积效应, 得到了更好的孔形。禁带模拟计算表明, 与常规FIB 刻蚀出的锥形圆孔相比, 使用XeF₂气体辅助刻蚀得到的这种侧壁更陡直的圆孔阵列构成的光子晶体禁带更趋近于理想光子晶体的禁带。