高性能Fe—Co合金有序纳米线阵列的制备与磁性研究

采用两步电化学阳极氧化方法制备了有序多孔氧化铝模板,通过交流电化学沉积方法在模板中合成了线间距约为62nm、直径约为25nm的Fe48Co52合金纳米线阵列,细致研究了阵列的晶体结构与磁性能．研究表明：沉积态阵列具有体心立方结构．氢气退火处理对阵列的晶体结构没有影响,但是会显著提高阵列的磁性能．退火后,Fe—Co合金纳米线阵列显示了较高的永磁性能,其易磁化方向的矫顽力、矩形度以及单根纳米线的最大磁能积分别约为3．63kOe、0．971以及33．7mol／dm^3 GOe．     

羟基磷灰石纳米线的可控制备

用P2O5和Ca(NO3)2作为前驱体溶液，将溶胶—凝胶法与氧化铝模板(AAO)技术相结合，大面积制备出结构均匀、晶相一致、彼此平行且高度有序的羟基磷灰石(HAP)纳米线．结果表明，通过控制制备AAO模板的条件，可达到控制HAP形貌的目的．     

细胞色素C在纳米银线阵列传感器上的电化学研究

在自制的多孔阳极氧化铝模板辅助下,用直流电解法在玻碳电极表面成功生长了大面积的纳米银线阵列。高分辨扫描电镜照片显示,银纳米线阵列均匀有序,单根纳米线的直径约40 nm,这与所用氧化铝模板的平均孔径(40 nm)相当吻合。将银纳米线阵列传感器用于细胞色素C的电化学研究,灵敏度大大提高,检测限达到0.1 mg/mL。     

An effective amperometric biosensor based on graphene modified gold nanowire arrays for glucose detection

A novel glucose biosensor based on graphene nanosheets （GNs） modified gold nanowire arrays （AuN- WAs） electrode was constructed. Highly ordered gold nanowire arrays were prepared by direct electrodeposition in anodic aluminum oxide templates. GNs were synthe- sized through a public route involving graphite oxidation, exfoliation, and chemical reduction. Field emission scan- ning electron microscope and high-resolution transmission electron microscope were employed to characterize the as- prepared AuNWAs and GNs. Glucose oxidase was immobilized on the surface of GNs-AuNWAs modified electrode via a cross-linking method. The cyclic voltam- metry results showed that the GNs-AuNWAs-based glu- cose biosensors have high catalysis activity to hydrogen peroxide （H2O2） than those modified with GNs or AuN- WAs only. Furthermore, amperometric response was employed to detect glucose concentration owing to its simplicity, high selectivity, and relative low cost. Glucose biosensors based on GNs-AuNWAs showed excellent performance with high sen- sitivity of 40.25 μA cm^-2 （mmol/L）^-1, low detection limit of 0.02 mmol/L, and a linear range from 0.02 to 3 mmol/L.     

电化学组装一维纳米线阵列温差电材料

低维温差电材料具有比块状温差电材料更高的优值,因而研制具有纳米线阵列结构的温差电材料对于提高材料的温差电转换效率具有重要意义.以具有纳米孔阵列结构的氧化铝多孔模板为阴极,在含有Bi 3、HTeO2 1的酸性溶液中,采用直流电沉积技术,通过在氧化铝多孔模板的纳米级微孔中沉积铋和碲,实现了一维纳米线阵列铋碲温差电材料的电化学组装.环境扫描电子显微镜(ESEM)和透射电子显微镜(TEM)的分折表明,电化学组装出的铋碲纳米线分布均匀,形状规则.铋碲纳米线的组成可方便地通过调整电沉积电位加以控制.     

聚乙烯亚胺对ZnO纳米线阵列膜的形貌和光电性能的影响

采用X射线衍射仪、投射电镜仪和扫描电镜仪等测试手段,系统地研究了不同聚乙烯亚胺(PEI)浓度对ZnO纳米线阵列膜的形貌、线密度和尺寸的影响及ZnO纳米线阵列膜的光电性能.研究结果表明,在PEI浓度从3.2 mmol.L-1变化到9.3 mmol.L-1所制备的所有ZnO纳米线阵列膜中,使用7.3 mmol.L-1PEI浓度合成的ZnO纳米线阵列膜,制成染料敏化太阳能电池后获得0.66%的最高的光电转换效率.     

铁钴合金纳米线有序阵列的制备及其磁性表征

用电化学法制备了高度有序的多孔阳极氧化铝（AAO）模板，选摩尔比为1：1的CoSO4和FeSO4混合溶液为电解液，用交流电化学沉积法在多孔阳极氧化铝的柱形微孔内制备Fe0.5 Co0.5合金磁性纳米线有序阵列．分别用扫描电镜、透射电镜、X射线衍射仪对多孔氧化铝模板和纳米线阵列的微观形貌和结构进行分析，用振动样品磁强计（VSM）对样品的磁学性能进行测试．结果显示，制备的磁性合金纳米线表面光滑、均匀，纳米线中的晶粒在生长过程中有（200）晶面的择优取向．VSM测试结果表明，纳米线阵列结构具有较高的垂直磁各向异性，当外场沿纳米线轴向磁化时，纳米线阵列有很大的剩磁比（Mr／Ms=0．7）和很大的矫顽力（饱和Hc=1700 Oe），说明样品经适当热处理后，剩磁比和纵向矫顽力普遍得到提高．     

长度可调的纳米线阵列近红外减反射特性

采用金属催化化学腐蚀方法在单晶硅表面制备了有序的纳米线阵列,研究了纳米线长度与腐蚀时间之间的关系,发现纳米线长度随着腐蚀时间的增加而增大。测试了所制备的具有纳米线阵列的硅表面在近红外1000nm～2500nm范围内的减反射性能。测试结果表明,与未处理的光滑硅表面相比,具有纳米线阵列的表面的反射率大辐降低,并随着纳米线长度的增加,反射率减小。     

Synthesis of ordered Si nanowire arrays in porous anodic aluminum oxide templates

Highly ordered polycrystalline Si nanowire arrays were synthesized in porous anodic aluminum oxide (AAO) templates by the chemical vapor deposition (CVD) method. The morphological structure, the crystal character of Si nanowire arrays and the individual nanowire were analyzed by the transmission electron microscopy (TEM), scanning electron microscopy (SEM), atom force microscopy (AFM) and the X-ray diffraction spectrum (XRD), respectively. It is shown that most fabricated silicon nanowires (SiNWs) tend to be assembled parallelly in bundles and constructed with highly orientated arrays. This method provides a simple and low cost fabricating craftwork and the diameters and lengths of SiNWs can be controlled, the large area Si nanowire arrays can be achieved easily under such a way. The curling and twisting SiNWs are fewer than those by other synthesis methods.     

用X射线衍射研究不同直径镍纳米线阵列的生长方向

大面积有序的不同直径的镍纳米线阵列在多孔氧化铝模板中通过直流电化学沉积制备,利用X光衍射研究了它们的生长方向。充分利用X光的特点对镍纳米线阵列的正反两面进行了测量,结果发现随着纳米线直径的增加,镍纳米线方向向由[110]方向开始向[111]方向转变。并且,利用高分辨透射电镜进行观测,结果发现和XRD得到的结果是一致的。这进一步说明了利用X光来研究纳米线的生长方向既简单又准确．该方法将在以后的纳米器件的研究中起到重要的作用,     

SnO2纳米线阵列的制备及纳米器件的制作

采用简单的溶胶-凝胶方法在多孔阳极氧化铝模板(AAM)的微孔中制备了高度有序的SnO2纳米线阵列。XRD,SEM和TEM对样品进行了结构和形貌的表征,结果表明,高度有序的SnO2纳米线具有四方相的多晶结构,纳米线连续均匀;并对SnO2纳米线阵列的生长机理进行了探讨;最后用聚焦离子束沉积设备制作了单根SnO2纳米线器件。     

A review on TiO2 nanotube arrays: Fabrication, properties, and sensing applications

Fabrication, properties, and sensing applications of TiO₂ nanotubes have been reviewed, and the highly ordered TiO₂ nanotube arrays made by anodic oxidation in fluoride-contained electrolytes highlighted. The effect of anodization parameters (electrolyte, pH, and voltage) on the titania nanotube size and shape were discussed. The excellent biocompatibility of TiO₂, the high orientation, the large surface area with tunable pore sizes, as well as the high electron transfer rate along with the nanotubes make TiO₂ nanotube array an ideal substrate for the sensor’s fabrication and application. The sensors based on the TiO₂ nanotube arrays for sensing hydrogen, oxygen, humidity, glucose and hydrogen peroxide all exhibited low detection limit, high stability, very good reproducibility and high sensitivity.     

交流电沉积条件对沉积Ni纳米线的影响

采用恒压40V二次阳极氧化方法制备了阳极氧化铝(AAO)模板,模板的孔径均匀有序。在二次阳极氧化的基础上阶梯降低电压至10V,可有效减薄阻隔层,有利于Ni纳米线的交流电沉积。利用扫描电子显微镜和透射电子显微镜对AAO模板以及Ni纳米线的形貌进行表征。探索了阶梯降低氧化电压、电源滤波以及电沉积频率对沉积Ni纳米线的影响。结果表明,阶梯降低氧化电压、适当的频率以及滤波可以明显提高电沉积效果,得到比较均匀有序的Ni纳米线。     

Fe纳米线阵列宏观磁性的Preisach模拟

采用阳极氧化铝模板法制备16nm的铁纳米线阵列膜,并研究了其宏观磁学性质.沿着纳米线长轴加场测得的磁滞回线表现出高的矫顽力和矩形比,归因于垂直于膜面的高形状各向异性.等温剩磁曲线和直流退磁曲线的测量结果表明纳米线阵列体系中存在强烈的退磁性相互作用.采用Preisach模型对相关曲线进行模拟,发现剩磁矫顽力和相互作用场的分布较窄,是一种典型的符合双势垒模型的体系.     

Two-dimensional array of nanoparticles intermitted by long chain molecules

It is an important theme in nanoscience to control the interval of the ordered array of nanoparticles through modifying the chain length of the passivating molecules of the nanoparticles. The theme runs through most of the applications of the ordered array of nanoparticles. Though the Langmuir-Blodgett (LB) technique is one of the most important ways to prepare the two- dimensional ordered array of nanoparticles, it has only been used in case that the passivating molecules are short enough (相似文献   

金纳米线阵列的制备及其光学性能研究

采用二次阳极氧化法制备了高度有序的多孔氧化铝模板,并基于该氧化铝模板,采用脉冲直流电化学沉积的方法制备了金纳米线阵列.利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）和X线衍射仪（XRD）对所制备的金纳米线的形貌及晶体结构进行分析.结果表明：不同的沉积电压下制备的金纳米线具有不同的生长取向性,当沉积电压为3V时制备出的金纳米线沿[200]方向具有明显的生长取向性.利用紫外-可见光谱（UV-Vis）对金纳米线阵列光学性能进行研究,发现金纳米线的等离子体共振吸收峰随着沉积电压的增大先蓝移而后发生红移.     

基于Pd纳米线的过氧化氢无酶传感器

基于AAO模板采用电化学沉积法在玻碳电极表面制备Pd纳米线,采用扫描电子显微镜表征了纳米线的形貌。用Pd纳米线构建了过氧化氢无酶传感器。研究结果表明：该传感器对过氧化氢（H2O2）具有很好的电化学催化作用。对过氧化氢的响应范围为1.0×10^-5-1.62×10^-3mol/L,检出限达到6.0×10^-6mol/L。该传感器具有较好的稳定性和重现性。     

Fabrication and field emission performance of arrays of vacuum microdiodes containing CuO nanowire emitters grown directly on glass without a catalyst

Arrays of vacuum microelectronic sources are fabricated on a glass substrate using cupric oxide (CuO) nanowire emitters. The arrays of electron sources possess a microdiode structure, which can effectively induce field emission and control the delivery of emitted electrons to the anode in a triode-type device operation. A technique for precisely growing CuO nanowires at the centre of microcavities in an array without using a catalyst and at temperatures as low as 400°C is presented. Such a simplified fabrication procedure results in improved field emission performance from the array compared with previous vacuum microelectronic devices. Typical prototype devices have turn-on gate voltages as low as 169 V to give emission current densities of 10 μA/cm2 at the anode. The ratio of anode current to cathode current reaches ~0.85, and the maximum change in emission current density per volt is 1 μA/cm2. Electron emission from the arrays is stable and reproducible under either pulsed or direct current fields. These characteristics indicate that microgate-controlled CuO nanowire emitters may find application in practical devices.     

有序金纳米阵列的可控制备及其表面增强拉曼光谱

介绍了一种大面积规则有序、结构可控、灵敏度高、稳定性良好、制备方法简单且易操作的表面增强拉曼散射(surface-enhanced Raman scattering, SERS) 活性基底. 以阳极氧化铝(anodic aluminum oxide, AAO) 模板一次氧化后形成的有序凹坑阵列为模板, 采用真空镀膜技术, 制备了有序的金纳米帽阵列SERS 活性基底, 并以罗丹明6G (Rhodamine 6G , R6G) 为探针分子, 测试和分析了该SERS 活性基底的表面增强拉曼光谱的特性. 结果表明, 这种SERS 活性基底对罗丹明6G 的拉曼散射信号可达到10⁷, 具有较好的增强作用. 该纳米帽阵列结构在1 363 cm⁻¹处的增强效果是相同厚度的普通金膜的7 倍, 且稳定性良好, 并且在放置6 个月之后, 其增强效果基本不变, 可用于化学物质和生物分子的痕量分析.     

铜纳米线拉伸断裂过程的原子尺度分子动力学模拟

基于经典力学势函数的分子动力学模拟方法研究铜纳米线的拉伸断裂过程,并分析断裂前应力、应变和位错行为的关系及断裂后的形貌演化.结果表明:纳米线两端的锥形结构可阻塞位错运动,从而提高其断裂强度;断裂后断口处尖锐的尖端结构形貌会发生自发的回缩和钝化,该过程是尖端上储存的弹性能和的高能结构(如孤立原子、孪晶界和表面弯折等)的自我修复,最终在表面上形成许多能量较低的(111)小平面所致;其物理机理是在温度激活下的能量最小化过程.