N-掺杂石墨烯薄膜的超电容性质研究

采用自组装/源位还原法相结合制备了自支撑褶皱N-掺杂石墨烯薄膜。运用场发射扫描电镜、X射线粉末衍射和光电子能谱仪等表征手段对所制备的韧性薄膜进行了表征。电化学性能测试表明所制备的N-掺杂石墨烯薄膜具有良好的超电容特性:在1 A/g的电流密度下,其比容量为210 F/g;当电流密度增加10倍时,仍然具有初始容量的71.0%。在5 A/g的电流密度下循环1 000次后比容量值为原来的95.3%。     

The structure of suspended graphene sheets

The recent discovery of graphene has sparked much interest, thus far focused on the peculiar electronic structure of this material, in which charge carriers mimic massless relativistic particles. However, the physical structure of graphene--a single layer of carbon atoms densely packed in a honeycomb crystal lattice--is also puzzling. On the one hand, graphene appears to be a strictly two-dimensional material, exhibiting such a high crystal quality that electrons can travel submicrometre distances without scattering. On the other hand, perfect two-dimensional crystals cannot exist in the free state, according to both theory and experiment. This incompatibility can be avoided by arguing that all the graphene structures studied so far were an integral part of larger three-dimensional structures, either supported by a bulk substrate or embedded in a three-dimensional matrix. Here we report on individual graphene sheets freely suspended on a microfabricated scaffold in vacuum or air. These membranes are only one atom thick, yet they still display long-range crystalline order. However, our studies by transmission electron microscopy also reveal that these suspended graphene sheets are not perfectly flat: they exhibit intrinsic microscopic roughening such that the surface normal varies by several degrees and out-of-plane deformations reach 1 nm. The atomically thin single-crystal membranes offer ample scope for fundamental research and new technologies, whereas the observed corrugations in the third dimension may provide subtle reasons for the stability of two-dimensional crystals.     

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides--LaAlO3 and SrTiO3--in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V(-1) s(-1). At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.     

氧化钒薄膜的掺锆实验研究

以V2O5和Zr（NO3）4．5H2O为原料，采用无机溶胶-凝胶法制备了掺Zr^4＋的VOx（2≤X≤2．5）相变薄膜。通过对掺杂薄膜的物相组成、价态、相结构的XPS和XRD分析及电阻突变量级和电阻突变温度的测试，结果发现：所制备的掺杂薄膜其主要成分是VO2，所掺入的Zr与VOx完全互溶，但其中Zr的价态未发生改变。掺杂薄膜随Zr含量的增加其电阻突变温度下降．同时其电阻突变量级也随之降低。     

石墨烯场效应晶体管电子识别葡萄糖

以铜箔为衬底,采用化学气相沉积的方法制备大面积单层石墨烯薄膜并制备相应的石墨烯场效应晶体管,过氧化氢电子识别研究表明,石墨烯场效应晶体管的电性能对由过氧化氢产生的外来干扰非常灵敏。利用末端带有吡啶环功能基团的葡萄糖氧化酶对石墨烯场效应晶体管进行表面改性后,葡萄糖电子识别结果表明其器件对葡萄糖有非常灵敏的电子识别性能,其检测下限小于0.1 mM,且具有生物传感器响应快、稳定性好的特点。     

负偏压对六方氮化硼薄膜沉积特性的影响

利用射频磁控溅射法在n型Si(100)衬底上沉积六方氮化硼薄膜(h-BN),采用AFM、Raman、XPS、FTIR等技术研究负偏压对所沉积薄膜生长模式、结构、表面粗糙度、薄膜取向、相变等特性的影响。结果表明,当负偏压为0V时,沉积所得h-BN薄膜表面粗糙度较低、结晶性良好、c轴垂直于衬底且以层状模式生长;随着负偏压的增加,薄膜由层状模式生长转变为岛状模式生长,表面粗糙度增加,且h-BN经亚稳相E-BN和wBN向c-BN转变,使得BN薄膜相系统更加混乱,不利于高质量层状h-BN薄膜的获取。     

Room-temperature electronic phase transitions in the continuous phase diagrams of perovskite manganites

Highly correlated electronic systems--such as transition-metal oxides that are doped Mott insulators--are complex systems which exhibit puzzling phenomena, including high-temperature superconductivity and colossal magnetoresistivity. Recent studies suggest that in such systems collective electronic phenomena are important, arising from long-range Coulomb interactions and magnetic effects. The qualitative behaviour of these systems is strongly dependent on charge filling (the level of doping) and the lattice constant. Here we report a time-efficient and systematic experimental approach for studying the phase diagrams of condensed-matter systems. It involves the continuous mapping of the physical properties of epitaxial thin films of perovskite manganites (a class of doped Mott insulator) as their composition is varied. We discover evidence that suggests the presence of phase boundaries of electronic origin at room temperature.     

电化学功能化石墨烯作为铜基复合薄膜的防腐增强材料

Cu–graphene (Gr) composite thin films were prepared by electrodeposition route using in-house synthesized Gr sheets. The Gr sheets were synthesized by the electrochemical exfoliation route using 1 M HClO₄ acid as electrolyte. The Gr sheets were confirmed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). The (002) plane of Gr sheets was observed at 2θ of 25.66°. The (002) plane confirmed the crystal structure of carbon peaks. The stretching vibration of C=C bond at a wavelength of 1577 cm?1 and other functional groups of carboxyl and epoxide groups were observed from FTIR. TEM confirmed the transparent structure of Gr sheets. The prepared Gr sheets were used as reinforcement at concentrations of 0.1 and 0.3 g/L with a copper matrix to synthesize the Cu–Gr composite. The prepared composite thin films were characterized by XRD, SEM, and energy-dispersion spectrometry (EDS) for morphological and analytical studies. The presence of Gr sheets in Cu–Gr composite was confirmed by EDS analysis. The prepared Cu–Gr nanocomposite thin film showed higher corrosion resistance compared with pure copper thin films in 3.5wt% NaCl, as confirmed by Tafel plots. Electrochemical impedance spectroscopy complimented the above results and showed that 0.3 g/L composite film achieved the highest film resistance.     

Graphene-based composite materials

Graphene sheets--one-atom-thick two-dimensional layers of sp2-bonded carbon--are predicted to have a range of unusual properties. Their thermal conductivity and mechanical stiffness may rival the remarkable in-plane values for graphite (approximately 3,000 W m(-1) K(-1) and 1,060 GPa, respectively); their fracture strength should be comparable to that of carbon nanotubes for similar types of defects; and recent studies have shown that individual graphene sheets have extraordinary electronic transport properties. One possible route to harnessing these properties for applications would be to incorporate graphene sheets in a composite material. The manufacturing of such composites requires not only that graphene sheets be produced on a sufficient scale but that they also be incorporated, and homogeneously distributed, into various matrices. Graphite, inexpensive and available in large quantity, unfortunately does not readily exfoliate to yield individual graphene sheets. Here we present a general approach for the preparation of graphene-polymer composites via complete exfoliation of graphite and molecular-level dispersion of individual, chemically modified graphene sheets within polymer hosts. A polystyrene-graphene composite formed by this route exhibits a percolation threshold of approximately 0.1 volume per cent for room-temperature electrical conductivity, the lowest reported value for any carbon-based composite except for those involving carbon nanotubes; at only 1 volume per cent, this composite has a conductivity of approximately 0.1 S m(-1), sufficient for many electrical applications. Our bottom-up chemical approach of tuning the graphene sheet properties provides a path to a broad new class of graphene-based materials and their use in a variety of applications.     

硼化氮-石墨烯杂化单原子层电学性质的第一原理

利用基于密度泛函理论的第一原理方法研究二维六方硼化氮片（h-BN） 石墨烯杂化单原子层的电学性质. 结果表明: 三角形h-BN嵌入石墨烯中或三角形石墨烯片嵌入二维h-BN中均会在能带结构导带和价带中间引入带间态, 带间态的形态与杂化方式有关; 半导体性与导体性质可相互转变, 即该杂化结构的电子结构可通过不同杂化形式调制.     

SnO2/Fe2O3复合膜界面电导率特性分析

等离子体化学气相淀积法（PCVD法）制备的复合膜SnO2/Fe2O3界面电导特性是由于非平衡反应生成的过渡层的结果。其电导机理可用半导体薄膜理论来阐明：当锡在Fe2O3中的浓度低时，由于准自由电子补偿机制起作用，电导率升高；当锡与铁在过渡层中浓度接近时，杂质散射和晶界电阻增大，电导率急剧减小。     

退火条件对氧化钒薄膜电学性能的影响

文中采用射频反应溅射法制备氧化钒薄膜,并用三段式控温退火炉对薄膜进行快速升降温退火处理.文中重点就退火条件对氧化钒薄膜的电学性能的影响进行了研究.研究结果表明:退火时间和退火温度均对薄膜电学性能有较大影响,考虑到氧化钒薄膜热敏性能要求,兼顾微测辐射热计制备工艺(即微电子机械系统(简称MEMS)工艺)要求,退火时间约1～...     

Nanomechanics: response of a strained semiconductor structure

The nanomechanical properties of thin silicon films will become increasingly critical in semiconductor devices, particularly in the context of substrates that consist of a silicon film on an insulating layer (known as silicon-on-insulator, or SOI, substrates). Here we use very small germanium crystals as a new type of nanomechanical stressor to demonstrate a surprising mechanical behaviour of the thin layer of silicon in SOI substrates, and to show that there is a large local reduction in the viscosity of the oxide on which the silicon layer rests. These findings have implications for the use of SOI substrates in nanoelectronic devices.     

晶圆级二维单晶材料生长的研究进展

低维材料因其原子级的物理尺寸而拥有独特的物理化学性质. 以石墨烯为代表的二维材料具有优越的光学、电学、力学及热学性能,在电子、光电、能源、催化等领域具有巨大的应用潜力. 大尺寸、高质量的单晶材料是大规模高端器件的应用基础. 为此,研究者们致力于实现晶圆级二维单晶材料的制造研究. 利用化学气相沉积法(CVD)制备二维材料具有薄膜质量高、可控性强、均匀性好等优点,因此,CVD成为制备高质量二维单晶材料的首选. 文章从二维导电石墨烯、绝缘氮化硼和半导体过渡金属硫族化合物入手,总结了近年来利用CVD技术外延制造二维单晶薄膜的研究进展,讨论了大面积二维单晶材料的制备策略与生长机理,指出了目前存在的问题,对未来高质量二维单晶薄膜的制备方法进行了展望. 该综述为进一步推动二维单晶材料的规模化应用提供借鉴.     

SnO_2/Fe_2O_3复合膜界面电导率特性分析

等离子体化学气相淀积法 (PCVD法 )制备的复合膜 Sn O2 /Fe2 O3界面电导特性是由于非平衡反应生成的过渡层的结果 .其电导机理可用半导体薄膜理论来阐明 :当锡在 Fe2 O3中的浓度低时 ,由于准自由电子补偿机制起作用 ,导电率升高 ;当锡与铁在过渡层中浓度接近时 ,杂质散射和晶界电阻增大 ,电导率急剧减小     

功能化石墨烯在生物医学研究中的应用

石墨烯以其独特的二维结构和优良的电学、光学、热学和机械性能,自2004年来倍受研究人员的高度关注,迅速成为材料、化学、物理和医学领域的热点研究课题.在简要介绍石墨烯基本情况的基础上,重点阐述了石墨烯在生物传感器、靶向给药中的应用.     

CeO2掺杂ZnO薄膜制备和紫外吸收性能

 研究射频磁控溅射技术制备的CeO2掺杂ZnO薄膜的结构及紫外光吸收性能。结果显示,ZnO（002）晶面的晶面间距增大,由于晶格畸变的增加导致薄膜中的内应力也相应增加,随着CeO2掺入量的增加,引起ZnO晶格的进一步松弛,因此ZnO将呈混晶方式生长;由于ZnO的晶粒同时有多个生长方向,因而抑制了ZnO晶粒（002）取向生长度的速度,导致了晶粒尺寸的逐渐降低,薄膜的C轴择优取向性随CeO2含量的升高而降低。CeO2掺杂样品与纯ZnO薄膜的吸收谱的形状没有大的改变,吸收峰形基本一致,掺CeO2使薄膜的紫外吸收显著增强,吸收边明显向短波方向移动,吸收边的斜率有微小提高,吸收峰宽度略微增大,吸收强度增加。     

Growth of graphene from solid carbon sources

Monolayer graphene was first obtained as a transferable material in 2004 and has stimulated intense activity among physicists, chemists and material scientists. Much research has been focused on developing routes for obtaining large sheets of monolayer or bilayer graphene. This has been recently achieved by chemical vapour deposition (CVD) of CH(4) or C(2)H(2) gases on copper or nickel substrates. But CVD is limited to the use of gaseous raw materials, making it difficult to apply the technology to a wider variety of potential feedstocks. Here we demonstrate that large area, high-quality graphene with controllable thickness can be grown from different solid carbon sources-such as polymer films or small molecules-deposited on a metal catalyst substrate at temperatures as low as 800?°C. Both pristine graphene and doped graphene were grown with this one-step process using the same experimental set-up.     

Mg掺杂Ba（Zr0．25Ti0．75）O3薄膜的介电调谐性能

采用溶胶凝胶工艺,在Pt／Ti／SiO2／Si衬底制备了Mg掺杂Ba（Zr0．25Ti0．75）O3（BZT）薄膜．利用X射线衍射（XRD）和原子力显微镜（AFM）分析测定了物相微结构和薄膜表面形貌,研究了Mg掺杂含量对BZT微结构和介电调谐性能的影响．结果表明Mg掺杂BZT使薄膜表面粗糙度、晶粒尺寸、介电常量、介电损耗和调谐量都降低;5mol％Mg掺杂BZT薄膜有最大的优值因子为16．3,其介电常数、介电损耗和调谐量分别为289．5、0．016和26．8％．     

掺杂对SnO2超微粒薄膜湿敏特性的影响

本文对ＳｎＯ２和掺有３％Ｂ２Ｏ３的ＳｎＯ２超微粒薄膜的湿敏特性进行了研究和比较。采用相同工艺条件制备和处理的样品，其结果并不一样。ＳｎＯ２膜的感湿特性差，而掺杂的ＳｎＯ２膜具有较好的感湿特性，而且其湿敏特性曲线具有较好的线性。