| 氧化钒薄膜的掺锆实验研究 |
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| 引用本文： | 赵力丁,吴志明,蒋亚东.氧化钒薄膜的掺锆实验研究[J].实验科学与技术,2006,4(4):113-116. |
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| 作者姓名： | 赵力丁 吴志明 蒋亚东 |
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| 作者单位： | 电子科技大学,成都,610054 |
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| 摘 要： | 以V2O5和Zr（NO3）4．5H2O为原料，采用无机溶胶-凝胶法制备了掺Zr^4＋的VOx（2≤X≤2．5）相变薄膜。通过对掺杂薄膜的物相组成、价态、相结构的XPS和XRD分析及电阻突变量级和电阻突变温度的测试，结果发现：所制备的掺杂薄膜其主要成分是VO2，所掺入的Zr与VOx完全互溶，但其中Zr的价态未发生改变。掺杂薄膜随Zr含量的增加其电阻突变温度下降．同时其电阻突变量级也随之降低。
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| 关 键 词： | 氧化钒 相变薄膜 无机溶胶-凝胶法 掺杂 |
| 文章编号： | 1672-4550（2006）04-0113-04 |
| 收稿时间： | 2006-06-01 |
| 修稿时间： | 2006-06-02 |
Experiment and Research of VOX Thin Films Doped with Zirconium |
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| ZHAO Li-ding,WU Zhi-ming,JIANG Ya-dong.Experiment and Research of VOX Thin Films Doped with Zirconium[J].Experiment Science & Technology,2006,4(4):113-116. |
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| Authors: | ZHAO Li-ding WU Zhi-ming JIANG Ya-dong |
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| Institution: | University of Electronic Science and Technology of China Chengdu 610054 |
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| Abstract: | An inorganic sol-gel method was developed to synthesize Zr~ 4+ doped vanadium oxide (VO_X) phase transition thin films by using V_2O_5 powders and Zr(NO_3)4.5H_2O as starting materials. The structure, composition and valence of the doped films were analyzed by means of XRD and XPS. The magnitude and temperature of the abrupt electrical resistance change of the doped films were tested. The results show that the main component of the prepared film is vanadium dioxide. Zr formed solid solution phases in the VO_X thin film. The valence of Zr in the doped thin films did not change and the magnitude and temperature of the abrupt electrical resistance change of the doped thin film were both decreased with the increase of Zr content. |
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| Keywords: | vanadium dioxide phase transition thin film inorganic sol-gel method doping |
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