燃烧合成纳米Y2O2S:Eu3+,Mg2+,Ti4+红色长余辉发光材料

用燃烧法成功合成了纳米Y2O2S:Eu3+,Mg2+,Ti4+红色长余辉发光材料,采用X射线粉末衍射仪(XRD)、扫描电镜(SEM)、荧光光谱仪(PL)对样品进行了物相组成、显微形貌、激发发射光谱等进行了表征.样品的主要组成为Y2O2S;呈厚度为40~70 nm,直径为100~200 nm的纳米片;在626 nm和617 nm处有强烈的红色发射.与固相法比较,激发光谱略有蓝移.     

掺杂离子对Y_2O_2S:Eu红色长余辉材料发光性能的影响

采用高温固相法制备了Y2O2S:Eu3+,Si4+,Zn2+红色长余辉发光材料。通过发射光谱、XRD、余辉衰减曲线和热释光谱的测量,研究了在Y2O2S:Eu体系中掺杂Si4+,Zn2+离子对荧光体的发光与长余辉特性的影响。结果表明,Si4+,Zn2+离子的掺杂不影响发射光谱和晶体结构,但显著地影响材料的长余辉特性。当Si4+,Zn2+离子摩尔含量为0.06mol,并且Zn2+和Si4+的摩尔比为1:1时,样品的发光亮度最高,而且它的余辉衰减时间也最长。根据实验结果,探讨了Y2O2S:Eu体系荧光体的长余辉发光机理.     

新型红色长余辉发光材料Gd2O2S:EU3+,Si4+,Ti4+的合成及性能表征

采用高温固相反应法首次合成了新型红色长余辉发光材料Gd2O2S:Eu3+,Si4+,Ti4+.用X射线粉末衍射(XRD)、扫描电镜(SEM)、分光光度计等对合成产物进行了分析与表征.结果表明:Gd2O2S:Eu3+,Si4+,Ti4+的晶体结构与Gd2O2S相同,为六方晶系.颗粒的形貌为类球形.Gd2O2S:Eu3+,Si4+,Ti4+的激发光谱呈250～400 nm宽带状,激发光谱主峰位于365 nm;发射光谱为线状光谱,归属于Eu3+的5DJ(J=0,1)→7FJ(K=0,1,2,4)跃迁.最强的发射峰为627 nm和617 nm,均属于5D0→7F2跃迁,且627 nm的发射峰明显远强于617nm,显示出纯正的红色发光;并且Si4+和Ti4+离子的共掺杂可显著延长样品Cd2O2S:Eu3+的余辉时间.     

荧光体Zn4B6O13及Zn4B6O13:Mn2+的长余辉发光性质

该文采用高温固相法合成了新型蓝紫色Zn4B6O13和黄绿色Zn4B6O13:Mn2+长余辉材料。通过XRD、荧光发射和激发光谱、余辉发射光谱与衰减曲线、色坐标和热释光谱测试手段对Zn4B6O13和Zn4B6O13:Mn2+进行了结构与发光性质表征。Zn4B6O13呈现两个荧光发射峰,与余辉发射基本一致,分别位于350 nm和430 nm附近。余辉持续时间约30 min。Zn4B6O13:Mn2+的荧光和余辉发射峰位于540 nm附近。热释光谱测试结果显示,基质至少存在三种缺陷中心,相应的热释发光峰分别位于345 K,405 K和530 K附近。其中,室温附近的两个低温峰相对应的陷阱中心是导致材料产生紫色和蓝色余辉发光的主要原因。Zn4B6O13:Mn2+样品的热释主峰位于350 K附近,它是导致黄绿色余辉产生的主要原因。     

硫化温度对Y_2O_2S:Eu~(3+),Mg~(2+),Ti~(4+)红色长余辉材料的形貌和发光性质的影响

用氢氧化钇纳米棒作为前驱体,与氧化铕、二氧化钛、碱式碳酸镁混合后,用碳粉和硫粉混合硫化合成Y2O2S:Eu3+,Mg2+,Ti 4+红色长余辉发光材料,研究硫化温度对Y2O2S:Eu3+,Mg2+,Ti 4+形貌和发光性质的影响。改变烧结温度分别制备得到零维、一维、三维的Y2O2S:Eu3+,Mg2+,Ti 4+长余辉材料。与三维粉体相比,零维和一维粉体的激发光谱向短波长移动,同时零维和一维粉体的余辉曲线衰减较快;热释光谱有两个峰,峰值分别在340K和490K附近,表明当烧结温度超过1 000℃,存在有两种不同类型的电子陷阱。     

Sr2MgSi2O7/Cu2+0.01,RE3+0.02长余辉发光材料的微波合成

首次应用微波法合成了系列蓝色长余辉发光材料Sr2Mgsi2O7/Eu2+0.01,RE3+0.02(Re3+=Dy3+,Ho3+,Ce3+,Er3+,Nd3+),对材料进行了XRD,SEM、激发和发射光谱、余辉衰减曲线的测定.结果表明:激发峰是由250～450 nm的宽激发带组成.其中,掺杂Dy3+,Er3+,Nd3+荧光粉的激发光谱均为主激发峰位于310,356 nm处的宽带谱,掺杂Cc3+的激发光谱为主发射峰位于280,330,360 nm处的宽带光谱,掺杂Ho3+的激发光谱为主发射峰位于315,360,400 nm的宽带光谱;发射光谱为主发射峰位于465 nm处的宽带发射谱,该发光归属于Eu2+的4f65d→4f7的允许电偶极宽带跃迁,并且随着Er3+,Dy3+,Nd3+,Ce3+,HD3+的顺序发光强度逐渐降低.余辉衰减曲线显示初始发光亮度最高,余辉时间最长的是Sr2MgSi2O7/Eu2+0.01,Nd3+0.02.     

燃烧合成纳米硫氧化钇红色长余辉材料

研究了不同柠檬酸用量燃烧合成纳米红色长余辉材料Y2O2S:Eu3+,Mg2+,Ti4+.采用X射线衍射(XRD)、扫描电镜(SEM)、荧光光谱(PL)对样品进行了表征.结果表明,燃烧产物主晶相为六角晶系的Y2O2S;柠檬酸用量为Y3+物质的量的1.4倍时,发光亮度最高,其在617、626 nm处有强烈的红色发射.     

Ti4+的掺入对Y2O2S:Eu3+,Mg2+,Ti4+陷阱分布和余辉性能的影响

用高温固相法制备了不同Ti4+掺杂量的红色长余辉材料Y2O2S:Eu3+,Mg2+,Ti4+,其X射线衍射分析、发射光谱和激发光谱均不受Ti4+掺杂量改变的影响.测量了Ti4+掺杂量不同的样品的热释光谱,随着Ti4+掺杂量的增加,热释光的峰值强度先增强后减弱,有了很大的变化;用PeakFit软件以一般阶动力学模型对Ti与Y2O2S的物质的量比分别为0.5%,2.5%和8.0%的样品进行了热释光曲线拟合,得出了它的单峰曲线并计算了与其对应的陷阱参数.陷阱分布表明:当Ti掺杂量为2.5%时,有利于合适深度陷阱的大量形成,从而使材料的发光和余辉性能得到了很大的提高.     

Ca3（VO4）2:Eu3+,Bi3+荧光材料的结构及性能研究

采用燃烧法工艺合成了Ca3(VO4)2:Eu3+,Bi3+荧光粉,对其结构、形貌和发光性能进行了表征,该荧光材料颗粒形貌规则、均一、发射主峰位于615.0nm,是一种良好的红色荧光粉。     

Sr2MgSi2O7:Eu2+,Dy3+发光陶瓷釉的试制

发光陶瓷釉市场前景看好,本研究重点介绍Sr2MgSi2O7:Eu2+,Dy3+发光陶瓷釉的制备过程,探讨了发光陶瓷釉配方、制备工艺等对发光陶瓷釉性能的影响,通过优化各种工艺条件、参数初步配制出具有一定效果的发光陶瓷釉。     

Synthesis and luminescence properties of Eu3+, Sm3+ doped (YxGd1-x)2O3:Si4+, Mg2+ long-lasting phosphor

A novel red long-lasting phosphor, (Y_1−x Gd _x )₂O₃:Eu³⁺, Sm³⁺, Si⁴⁺, Mg²⁺, was synthesized by the co-precipitation method using oxalate precipitation as the precursor. X-ray diffraction (XRD), scanning electronic microscopy (SEM), integrated thermal analyzer (TG), and photoluminescence spectra (PL) as well as the ST-900PM weak light photometer were used to study the synthesis conditions, morphology, luminescence properties, and the decay time of the phosphor. The XRD results show that the products synthesized at 1400°C for 4 h have good crystallization without any detectable impurity phases. Based on the PL spectra, the optimal conditions are as the following. The molar ratios of Y³⁺ to Gd³⁺ and Eu³⁺ to Sm³⁺ are 2:8 and 3:1, respectively, and the contents of Mg²⁺ and SiO₂ are 5mol% and 3mol%, respectively. The decay time monitored by the ST-900PM weak light photometer is 7200 s, increasing 44% and 100%, respectively, compared with the Eu³⁺ and Sm³⁺ single-doped phosphors. The results indicate that the energy transfer is from Sm³⁺ to Eu³⁺ ion, and Sm³⁺ is a good sensitizer to Eu³⁺.     

Soft chemical synthesis and luminescence properties of red long-lasting phosphors Y2O2S:Sm3+

Sm³⁺-activated Y₂O₂S red phosphors were prepared by the combustion method and microemulsion method at the first time. X-ray characterization and electron diffraction show that, Y₂O₂S:Sm³⁺, Ti⁴⁺, Mg²⁺ samples prepared by these two methods are pure hexagonal crystals in structure with a trivial change due to dopants. Scanning electron microscopy (SEM) results show that the product presents an almond-like sheet in uniform size. Under the excitation of 269 nm ultraviolet light, Y₂O₂S:Sm³⁺ samples fabricated by these two methods exhibit three main groups of red emission lines located at 564, 604, and 656 nm, respectively, which are attributed to the transitions of 4G_5/2 →6H_5/2, 4G_5/2 →6H_7/2, 4G_5/2 →6H_9/2, respectively. The samples prepared by microemulsion are seven times higher in fluorescent emission intensity and half time longer in afterglow time than that prepared by combustion.     

Preparation of Gd2O3:Eu3+ downconversion luminescent material and its application in dye-sensitized solar cells

Gd₂O₃:Eu³⁺ downconversion luminescent powder was prepared using the homogeneous precipitation method. Its optical properties were analyzed and it was introduced into a dye-sensitized solar cell (DSSC). As a luminescence medium, Gd₂O₃:Eu³⁺ improved light harvesting via conversion luminescence and increased the photocurrent of the DSSC. As a p-type dopant insulating rare earth oxides form an energy barrier, and the Gd₂O₃:Eu³⁺ elevated the energy level of the oxide film and increased the photovoltage. The photoelectric conversion efficiency for a DSSC with Gd₂O₃:Eu³⁺ doping (6:100) reached 7.01%, which was 17.4% higher than the photoelectrical conversion efficiency of a DSSC without Gd₂O₃:Eu³⁺ doping.     

Down-conversion characteristics of Eu3+ doped M2Y2Si2O9 (M = Ba,Ca, Mg and Sr) nanomaterials for innovative solar panels

Down-conversion properties of Eu³⁺ doped M₂Y₂Si₂O₉ (M = Ba, Ca, Mg, Sr) phosphors have been investigated in detail. These phosphors were synthesized via the simple, fast and cost-effective sol-gel technique at a temperature of 950 °C. Color coordinates and emission color can be altered by the varying concentration of dopant ion in Ca₂Y₂Si₂O₉ phosphor. Optimum luminescence intensity was obtained when doping 0.03 mol of Eu³⁺ ion. Using the excitation wavelength of 395 nm, these silicates showed strong red color, pure and sharp spectral peaks in visible region due to ⁵D₀→⁷F_1-3 transitions of Eu³⁺ present in the lattice. Effect of reaction temperature on luminescence was also analyzed for these phosphors. The sharp peaks in the X-ray diffraction pattern indicated the high crystallinity of prepared phosphors. Ca₂Y₂Si₂O₉ has shown an orthorhombic crystal structure. The FTIR results confirmed the metal-oxygen vibrational modes available in the range of 400–1600 cm^?1. Transmission electron microscopy images have revealed that the variation of alkaline earth metal provided a very different crystal structure. Excellent down conversion response of these phosphor materials can provide a great significance in the application of the coming solar devices.     

Thermal degradation of BaAl2Si2O8：Eu2＋ phosphor excited by near ultraviolet light

Eu2+ doped BaAl2Si2O8 phosphor was synthesized by one-step calcination of precursors that were prepared by chemical co-precipitation.The thermal degradation properties of BaAl2Si2O8:Eu2+ were investigated by photoluminescence,lifetime and chromaticity coordinate measurements.BaAl2Si2O8:Eu2+ is efficiently excited by incident light of 250-400 nm,which matches the emission of near ultraviolet LED chips well.BaAl2Si2O8:Eu2+ exhibits broad blue emission at 470 nm because of the 4f65d1-4f7(8S7/2) transition of Eu2+ ions,and the emission band shows an unusual blue shift with bandwidth broadening and emission intensity decreasing as the annealing temperature is increased.The luminescence decay and CIE chromaticity coordinates of BaAl2Si2O8:Eu2+ were determined to investigate its application in white LEDs.     

Potential red-emitting phosphor GdNbO4:Eu3+,Bi3+ for near-UV white light emitting diodes

A red-emitting phosphor GdNbO₄:Eu³⁺,Bi³⁺ was prepared by a high temperature solid-state reaction technique. The phosphor was characterized by X-ray diffraction (XRD), particle size analyzer and fluorescence spectrometer. The single phase of GdNbO₄:Eu³⁺,Bi³⁺ was obtained at 1150°C and the average particle diameter was about 2.30 ??m. Excitation and emission spectra reveal that the phosphor can be efficiently excited by ultraviolet (UV) light (394 nm) and emit the strong red light of 612 nm due to the Eu³⁺ transition of ⁵D₀??⁷F₂. The optimum content of Eu³⁺ doped in the phosphor GdNbO₄:Eu³⁺ is 20mol%. The phosphor Gd_0.80NbO₄:0.20Eu³⁺,0.03Bi³⁺ shows much stronger photoluminescence intensity and better chromaticity coordinates (x=0.642, 0.352) than GdNbO₄:Eu³⁺. It is confirmed that Gd_0.80NbO₄:0.20Eu³⁺,0.03Bi³⁺ is a potential candidate for near-UV chip-based white light emitting diodes.     

Investigation of the electronic structure and photoluminescence properties of Eu3＋ in Sr2Mgl_xZnxSi207 （0 〈x 〈 1）

Undoped and Eu 3+-doped Sr 2 Mg 1-x Zn x Si 2 O 7 (0≤x≤1) powder crystals were obtained by conventional solid-state reaction.X-ray diffraction,inductively coupled plasma analysis,and Fourier transform infrared spectroscopy results implied that a complete solid-solution formed between Sr 2 MgSi 2 O 7 and Sr 2 ZnSi 2 O 7 as well as local structural adjustment.Excitation spectra exhibited O 2-Eu 3+ charge transfer (CT) bands centered at 250 nm for Sr 2 MgSi 2 O 7:Eu 3+ and 258 nm for Sr 2 ZnSi 2 O 7:Eu 3+.Emission spectra exhibited a major band around 616 nm,which showed the environment around Eu 3+ was non-centrosymmetric in both Sr 2 MgSi 2 O 7:Eu 3+ and Sr 2 ZnSi 2 O 7:Eu 3+.In addition,first principles calculations within the local density approximation (LDA) of density functional theory (DFT) were used to calculate the electronic structure of Sr 2 MgSi 2 O 7 and Sr 2 ZnSi 2 O 7.Calculated results were correlated with experimental UV-vis reflection spectra and the observed shift of the O 2-Eu 3+ CT band.     

PbxNayYzF2x+y+3z+3m∶Erm3+上转换发光粉的低温燃烧合成及表征

采用低温燃烧合成（LCS）法一步合成了Pb_xNa_yY_zF_2x+y+3z+3m:Er_m3+氟化物体系1 550 nm响应的红外上转换发光材料. 通过正交实验研究了4种阳离子影响发光性能的主次关系及最佳配比,研究了燃料用量对晶相形成及上转换发光性能的影响. 采用X射线粉末衍射仪、透射电镜、荧光分光光度计（耦合1 550 nm激光器）等手段对样品的物相、形貌及发光性能进行了测试与表征. 结果表明:阳离子含量对红光发射强度影响的主次关系为Y3+,Pb2+,Na+,Er3+,最佳配比为Pb_0.004Na_0.003 Y_0.003 F_0.032:Er3+_0.004. 燃料取2.5倍理论用量时样品的结晶度和发光强度最高.      

Structural investigation and luminescent properties of BaZr(BO<Subscript>3</Subscript>)2:Eu<Superscript>3+</Superscript> phosphors containing Si

Si⁴⁺-doped BaZr(BO₃)₂:Eu³⁺ phosphors are prepared by a conventional solid-state reaction. The influence of Si⁴⁺ addition on the charge transfer state of Eu³⁺-O^2– and photoluminescence (PL) properties of BaZr(BO₃)₂:Eu³⁺ are discussed. Room temperature PL spectra indicated that efficient emission is obtained by Si doping. Increased values for the peak-peak ratio (PPR) of BaZr(BO₃)₂:Eu³⁺ at higher Si doping concentrations implied that the Eu³⁺ ion is located in a more asymmetric environment in BaZr_0.8Si_0.2(BO₃)₂:Eu³⁺ than in the undoped samples. The Judd-Ofelt parameters Ω_λ (λ=2,4) were calculated from the PL data, giving results that were consistent with those from the PPR. The maximum radiative quantum efficiency was achieved at a Si doping concentration of 20 mol%.     

Preparation and luminescence characteristics of Sr3SiO5：Eu^2＋ phosphor for white LED

The Sr3SiO5：Eu^2＋ phosphor was synthesized by high temperature solid-state reaction. The emission spectrum of Sr3SiO5：Eu^2＋ shows two bands centered at 487 and 575 nm, which well agree with the theoretic values of emission spectrum. The excitation spectrum for 575 nm emission center has several excitation bands at 365, 418, 458 and 473 nm. And the results show that the emission spectrum of Sr3SiO5：Eu^2＋ is influenced by the Eu^2＋ concentration. The relative emission spectra of the white-emitting InGaN-based YAG：Ce^3＋ LED and Sr3SiO5：Eu^2＋ LED were investigated. The results show that the color development of InGaN-based Sr3SiO5：Eu^2＋ is better than that of InGaN-based YAG：Ce^3＋, and the CIE chromaticity of InGaN-based Sr3SiO5：Eu^2＋ is （x=0.348, y=0.326）.