铁磁材料磁化涡旋在应变作用下的响应

磁化涡旋是微米/亚微米铁磁材料中一种常见的磁畴结构,由于它可以被用于高密度的磁性存储设备中,近年来受到了人们的广泛关注。本文基于随时间变化的Ginzburg-Landau方程,采用实空间下的相场模型研究了铁磁材料中磁化涡旋的力磁耦合行为,探讨了铁磁纳米圆柱体中自发磁化涡旋形态以及该结构在沿圆柱体轴向应变作用下的响应行为。结果表明,沿圆柱体轴向的应变对面内磁化分量的幅值和分布影响十分微弱,但对垂直于圆柱体表面磁化分量的影响却十分明显,具体表现为平面外磁化分量的幅值将随着拉应变的增大而增大,又会伴随压应变的增大而减小。随着平面外磁化分量的增加,则更容易探测到该磁化涡旋的极性情况,从而有利于实验观察和实际应用。     

铁磁钢材应力致磁各向异性定量检测特性研究

为研究铁磁材料的应力致磁各向异性的物理表现及其对应力的定量检测特性,搭建了交流磁化/检测实验装置.在单向加载条件下,对铁磁Q195平板试件施加了不同程度的弹性应力.并在保持每个弹性应力方向及大小不变前提下,施加了不同方向的不饱和交流外磁场,检测了其交流磁化曲线.通过对实验数据的频谱分析、磁滞回线的获取及磁特征参数的提取,分析和讨论了铁磁材料应力致磁各向异性定量特性、磁各向异性特征参数与应力的定量关系.研究结果表明:应力导致了铁磁Q195钢材表现出了磁各向异性特性;应力致磁各向异性磁特征参数随着应力增大而近似于线性增大,可以通过提取对应的参数进而求取对应的应力.研究结果对系统探究铁磁材料的应力致磁各向异性定量特性具有一定参考价值.     

磁晶各向异性对反铁磁耦合纳米体系磁特性的影响

采用微磁学方法研究了磁性层的磁晶各向异性对反铁磁耦合三层纳米体系磁特性的影响.结果表明:随着磁性层磁晶各向异性的增大,反铁磁耦合三层纳米体系具有4种不同类型的磁滞回线,上、下磁性层的反转场逐渐减小,而饱和场先减小后增大.当磁晶各向异性较小时,反磁化过程为反磁化核的形成与传播过程;当磁晶各向异性很大时,反磁化过程为先形成多畴微磁结构,再逐渐反转的过程.     

磁膜-衬底悬臂梁系统中薄膜应力与应变分析

运用能量极小原理,研究了磁性薄膜-非磁衬底悬臂梁系统的弯曲问题,着重分析了悬臂梁体系的中平面、磁膜内应力和应变与构成悬臂梁的两种材料的几何参数和物理参数的关系,给出了这些参数对磁膜．衬底悬臂梁系统弯曲特性的影响．结果表明,由于磁致伸缩效应是各向异性膨胀,体系的中平面在一般情况下是各向异性的．随着磁膜厚度的增加,中平面迅速下降,同时衬底对磁膜的束缚减小,从而释放了磁膜内应力,即应力减小;而磁膜应变随膜厚增加而增加．材料泊松比对垂直于磁化方向的应力和应变以及中平面的影响较大．但是,对磁化方向的应力、应变中平面的影响很小,这一性质来源于磁化方向上磁膜主动伸缩效应．     

铁磁材料的动态磁致应变

针对磁处理用于降低材料残余应力时效果不稳定的问题,研究了磁处理参数的影响。通过实时测量磁处理过程中磁致应变的方法,研究了磁场磁通势、磁场变化频率和占空比对铁磁材料磁致应变的影响。结果发现,磁通势从0增大到40kA,铁磁材料的磁致应变增加,当大于40kA时,磁致应变趋于饱和,随着磁场变化频率和占空比的降低,铁磁材料的磁致应变增加,原因可以用磁场上升和下降的时间充裕来解释。该文的研究为选择和优化磁处理参数奠定了基础。     

兰姆波的电磁超声磁致伸缩式激励及其特性

研究了采用电磁超声探头在铁磁材料中激励兰姆波的换能结构和机理模型,磁致伸缩机制是在弱磁化状态下影响换能效率的主导机制,而Lorentz力和磁性力机制在此情况下的作用相对要小得多.对模型进行数值分析后得到,声波产生的幅度受磁致伸缩应变系数和磁导率的共同影响,并且随提离距离的增大而减小.实验结果也进一步验证了理论预测的准确性     

铁磁准同型相界附近畴结构和磁致伸缩响应的压力依赖效应:相场模拟

最近,在超磁致伸缩材料(Giant Magnetostrictive Materials,GMMs)体系发现的类似于铁电材料"准同型相界(Morphotropic Phase Boundary,MPB)"的铁磁MPB效应引起了研究者的广泛关注.但是前期关于铁磁MPB的研究大都集中在实验领域,铁磁MPB处超敏磁弹响应机制尚不清晰.不同于传统唯象模型,我们结合微弹理论开发了能够充分考虑不同相之间的应力、应变相容的相场微磁微弹模型.通过该模型研究了铁磁MPB处不同外场(压力、磁场)条件下磁化翻转和畴结构演化情况,阐明了相界附近微结构演化和宏观磁弹响应的依赖关系.相场微磁微弹理论对超磁致伸缩材料MPB的成功描述为调节铁磁准同型相界提供了有效的科学途径,有望为新型超磁致伸缩材料的高效、低成本开发提理论指导.     

高斯涡旋光束的动量及轨道角动量与拓扑电荷数的关系及其在自由空间中的传输

将近轴光束理论应用于光束的动量及轨道角动量研究,推导了涡旋光束动量以及轨道角动量的解析表达式,在此基础上,对高斯涡旋光束的动量及轨道角动量的分布及其在自由空间中的传输进行了研究.理论分析及数值计算表明,动量的径向分量和角向分量在数值上比较接近,远小于动量的纵向分量,随着传输距离的增大,动量的三个分量在观测平面上的分布会逐渐沿径向拓展,其在观测平面上的极大值位置各不相同,都与源平面上光束的拓扑电荷数和束腰半径有关,观测平面上的整体积分表明,动量的三个分量在传输中都保持守恒;另外,观测平面上高斯涡旋光束轨道角动量的分布在传输中也会沿径向拓展,其在观测平面上的极大值位置与动量的纵向分量相同.观测平面上的整体积分证实了高斯涡旋光束在传输中轨道角动量保持守恒.     

采用磁致伸缩材料模型进行磁弹性屈曲的数值模拟

基于磁致伸缩材料模型,在不考虑体积伸缩的条件下,利用FEMLAB多物理场耦合软件,对悬臂铁磁板在横向磁场中的磁弹性屈曲问题进行了数值模拟,并将模拟得到的临界屈服磁感应强度与前人的实验结果进行了对比,得到了较好的一致性。数值模拟结果显示,随着铁磁板长厚比的增大,板屈曲失稳的临界屈服磁感应强度减小;采用的磁致应变系数越大,所得到的临界屈服磁感应强度越小;当磁致应变系数为1.3×10-4T-1时,计算结果与实验值吻合最好。数值分析结果表明,利用磁致伸缩材料模型来解释悬臂铁磁板在横向磁场中的磁弹性屈曲问题是合理的。     

应变状态下ZL114A铝合金低周疲劳行为的研究

在室温应变控制下,对ZL114A铝合金进行了单轴低周疲劳试验研究和显微分析,结果表明:材料在低周载荷下,当循环应变幅值小于0.6%,材料没有表现出循环硬化现象.随着循环应变幅值的增加,材料表现出明显的循环硬化现象;且随着应变幅值的增加材料的附加强化程度增大;应变幅值的大小对ZL114A铝合金低周疲劳寿命有较大影响,随着应变幅值的增大,疲劳寿命降低明显;疲劳损伤断口表现出大量的韧窝和韧性断裂的特征.     

Magnetic vortex core reversal by excitation with short bursts of an alternating field

The vortex state, characterized by a curling magnetization, is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of micrometre size and below. The interplay between the magnetostatic and the exchange energy favours an in-plane, closed flux domain structure. This curling magnetization turns out of the plane at the centre of the vortex structure, in an area with a radius of about 10 nanometres--the vortex core. The vortex state has a specific excitation mode: the in-plane gyration of the vortex structure about its equilibrium position. The sense of gyration is determined by the vortex core polarization. Here we report on the controlled manipulation of the vortex core polarization by excitation with small bursts of an alternating magnetic field. The vortex motion was imaged by time-resolved scanning transmission X-ray microscopy. We demonstrate that the sense of gyration of the vortex structure can be reversed by applying short bursts of the sinusoidal excitation field with amplitude of about 1.5 mT. This reversal unambiguously indicates a switching of the out-of-plane core polarization. The observed switching mechanism, which can be understood in the framework of micromagnetic theory, gives insights into basic magnetization dynamics and their possible application in data storage.     

Laser-induced ultrafast spin reorientation in the antiferromagnet TmFeO3

All magnetically ordered materials can be divided into two primary classes: ferromagnets and antiferromagnets. Since ancient times, ferromagnetic materials have found vast application areas, from the compass to computer storage and more recently to magnetic random access memory and spintronics. In contrast, antiferromagnetic (AFM) materials, though representing the overwhelming majority of magnetically ordered materials, for a long time were of academic interest only. The fundamental difference between the two types of magnetic materials manifests itself in their reaction to an external magnetic field-in an antiferromagnet, the exchange interaction leads to zero net magnetization. The related absence of a net angular momentum should result in orders of magnitude faster AFM spin dynamics. Here we show that, using a short laser pulse, the spins of the antiferromagnet TmFeO3 can indeed be manipulated on a timescale of a few picoseconds, in contrast to the hundreds of picoseconds in a ferromagnet. Because the ultrafast dynamics of spins in antiferromagnets is a key issue for exchange-biased devices, this finding can expand the now limited set of applications for AFM materials.     

Non-collinear states in magnetic sensors

Certain materials have an electrical conductivity that is extremely sensitive to an applied magnetic field; this phenomenon, termed 'giant magnetoresistance', can be used in sensor applications. Typically, such a device comprises several ferromagnetic layers, separated by non-magnetic spacer layer(s)--a so-called 'super-lattice' geometry. In the absence of a magnetic field, the ferromagnetic layers may be magnetized in opposite directions by interlayer exchange coupling, while an applied external magnetic field causes the magnetization directions to become parallel. Because the resistivity depends on the magnetization direction, an applied field that changes the magnetic configuration may be detected simply by measuring the change in resistance. In order to detect weak fields, the energy difference between different magnetization directions should be small; this is usually achieved by using many non-magnetic atomic spacer layers. Here we show, using first-principles theory, that materials combinations such as Fe/V/Co multilayers can produce a non-collinear magnetic state in which the magnetization direction between Fe and Co layers differs by about 90 degrees. This state is energetically almost degenerate with the collinear magnetic states, even though the number of non-magnetic vanadium spacer layers is quite small.     

Magnetization vector manipulation by electric fields

Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampère field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.     

Magnetic phase control by an electric field

The quest for higher data density in information storage is motivating investigations into approaches for manipulating magnetization by means other than magnetic fields. This is evidenced by the recent boom in magnetoelectronics and 'spintronics', where phenomena such as carrier effects in magnetic semiconductors and high-correlation effects in colossal magnetoresistive compounds are studied for their device potential. The linear magnetoelectric effect-the induction of polarization by a magnetic field and of magnetization by an electric field-provides another route for linking magnetic and electric properties. It was recently discovered that composite materials and magnetic ferroelectrics exhibit magnetoelectric effects that exceed previously known effects by orders of magnitude, with the potential to trigger magnetic or electric phase transitions. Here we report a system whose magnetic phase can be controlled by an external electric field: ferromagnetic ordering in hexagonal HoMnO3 is reversibly switched on and off by the applied field via magnetoelectric interactions. We monitor this process using magneto-optical techniques and reveal its microscopic origin by neutron and X-ray diffraction. From our results, we identify basic requirements for other candidate materials to exhibit magnetoelectric phase control.     

铁磁质在磁场中所受磁场力的数学模型

介绍了电磁场理论中基于虚功原理导出的磁场力的一般数学表达式以及从不同角度描述铁磁质磁致伸缩现象的几种方法、引入弹性力学理论中的应变能密度概念，从能量守恒和功能转换的角度描述了表征磁致伸缩现象的磁场力．进而给出了磁准静态场和正弦交变电磁场条件下铁磁质所受磁场力的数学模型．这些数学模型的建立为分析大型电力变压器铁芯及其他电力设备磁路的振动和噪声奠定了基础．     

复相多铁材料中电场调控自旋的翻转

电场调控的自旋翻转因在低能耗高密度的新型存储器件中有巨大的应用潜力而受到人们的广泛关注.在复相多铁材料中,利用磁电耦合效应有可能实现电场调控自旋的翻转.我们在CoPt/PMN-PT异质结中,利用电场调控矫顽力的变化,实现了电场调控自旋的翻转.在铁磁形状记忆合金Mn-Ni-Sn与0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3组成的复合材料中,通过电场调控交换偏置场的变化,无需偏置磁场就可以实现电场调控自旋的翻转.     

铁磁材料动态磁性的计算机辅助测量与研究

利用微机辅助测量技术来研究磁滞回线的动态磁化过程 ,分析在不同的初始磁场强度下的磁滞回线 ,并从理论上进行了深入的讨论 .     

基于马氏体重定向的铁磁形状记忆合金数值分析

基于铁磁形状记忆合金的磁场诱发应变来自磁场诱发马氏体变体的特征,本文在建立铁磁形状记忆合金的力—磁—热耦合理论的基础上,对铁磁形状记忆合金的磁致应变效应、磁滞效应以及磁致应力等特性进行数值分析,以揭示模型的合理性和适用性.