基于单片机动态磁滞回线的测量

研制了一种动态磁滞回线测量仪。用单片机采集和处理数据,用点阵液晶显示,离散测量动态磁滞回线和初始磁化曲线,揭示磁滞回线的形成过程和特征。显示的磁滞回线可通过按键放大或缩小,可用光标逐点读取磁场强度和磁感应强度。该测量仪测量准确,操作方便,教学效果好。     

高阶拟合对磁滞损耗测定的精度影响

利用实验方法测定样品的磁滞回线数据,采用专业软件Mathematica的拟合功能及其高阶多项式拟合方法拟合出样品的磁滞回线曲线及磁滞回线的函数关系;采用积分方法,计算出样品的磁滞损耗,并通过对逐级高阶拟合结果进行分析比较,讨论其对测定精度的影响.     

振动样品磁强计的磁性表征测量

基于振动样品磁强计的磁滞回线测试功能,以Co Zr薄膜、Fe_3O_4粉末和SrFe_(11.6)O_(19)粉末的样品为例,测试了磁滞回线。在准确调整样品鞍点的前提下,待测样品分别进行了通过制定粗测程序测试粗测磁滞回线,以及细测程序和相关磁滞回线。通过对比和分析所得的实验结果,展示了两种测试程序在实际测试中的作用及结果差异,粗测磁滞回线可以快速地提供样品大概的矫顽力、剩余磁化强度及饱和场等基本磁参量的取值范围,而细测磁滞回线提供了磁性材料的准确合理的矫顽力、剩余磁化强度及饱和场等基本磁参量。     

尺寸对椭圆钴纳米环磁特性的影响

利用Monte-Carlo方法模拟了不同长、短轴以及不同内径的椭圆钴纳米环的磁特性.模拟结果表明:对于偏心率较小的椭圆钴纳米环,当内径不大时,系统的磁滞回线与圆形钴纳米环的磁滞回线相当类似;当内径较大时,系统的磁滞回线与圆形钴纳米环的结果有很大的不同.当椭圆的偏心率增大时,由于存在较多的过渡状态,系统磁滞回线的台阶变得更为平滑,这可以通过系统的磁化过程进行解释.当椭圆的偏心率较大时,由于出现了大量的过渡状态,系统的磁滞回线呈现的台阶变得更加平滑.     

一种磁滞可调110/220 V自动切换系统

开发了１１０／２２０Ｖ电网自动切换系统,采用设置延迟时间和磁滞回线的方法,有效地防止了启动时误动作,避免在切换点附近频繁切换动作,讨论了延迟时间及磁滞回线回路的计算方法。     

NiFeNb种子层对坡莫合金磁滞回线的影响

采用NiFeNb为种子层,制备(Ni82Fe18)1-xNbx(35 )/(Ni82Fe18)(150 )/Ta(30 )系列膜,并对其颗粒大小和磁滞回线等进行测量,探讨种子层中Nb含量x对坡莫合金磁滞回线的影响.结果表明:以NiFeNb作种子层能更好地改善坡莫合金的微结构.种子层厚度为20 ,Nb含量为24 4%时,磁滞回线有最小的回线面积、矫顽力和较小的不对称性.种子层影响坡莫合金磁滞回线的一个重要原因是脱附激活能等因素造成种子层具有不同的表面粗糙度,进而使坡莫合金具有不同的微结构.     

用示波器测量铁磁物质的磁滞回线

论述了铁磁物质磁滞回线测量的基本原理.介绍了如何利用示波器观察和测量铁磁物质的磁滞回线、剩余磁感应强度和矫顽力.同时也详述了怎样描绘介质的基本磁化曲线和μ-H曲线.     

磁滞回线实验仪常见故障检测与处理

用示波器测绘铁磁材料的磁滞回线实验是国内许多高校大学物理实验课程普遍开设的一个电磁学实验.该实验的实验电路由于采用叠插线连接,经常因叠插线的内部断线或接触不良导致示波器不能正常显示磁滞回线.本文分析了实验中磁滞回线实验仪经常发生的故障现象,阐述了针对不同的故障现象,快速检测故障可能发生的位置并进行处理的方法,这对于实验教师及实验室管理人员的实验教学与管理工作是很有帮助的.     

铁氧体材料的磁滞损耗特性

对偏转磁芯所用的铁氧体材料的磁滞损耗特性进行了分析，介绍了磁滞回线测量的方法原理，由测试结果可计算出磁滞回线面积。得出磁滞损耗功率与频率、磁通密度及温度的经验公式。对磁滞回线中涡流的影响进行了讨论，指出目前应用的偏转频率下，在磁芯损耗中磁滞损耗占主要部分。     

基于Labview的磁滞回线测量

利用Labview的图形化开发平台和数据分析处理功能代替了原先的硬件积分过程并实现了磁滞回线的自动测绘。在此基础上,针对实验室教学需要,本文设计完成了磁滞回线测量的虚拟实验的主要构成部分,虚拟实验的开发将对实验教学提供很大的帮助和支持。     

磁性超晶格的静磁能和磁相图的唯像理论研究

计算了包含不同自旋取向的单畴粒子具有短程交换相互作用能,各向异性能及长程偶极相互作用能的磁性超晶格的静磁能,利用能面图和局域能量极小模型得到了磁相图和磁滞回线,研究了有限尺寸和温度效应,计算结果较好解释了在超薄磁性薄膜中观察到的两种磁相（磁化强度平行和垂直于薄膜平面）的转变行为。     

应力对铁磁/反铁磁双层体系交换偏置场的影响

研究在铁磁/反铁磁层体系中,当铁磁层中存在应力时对体系交换偏置场的影响.分别计算了改变应力大小和方向两种情况下,磁滞回线的变化以及偏置场随外磁场角度依赖关系的改变.结果表明:应力场沿着易轴方向时,偏置场随外磁场角度依赖关系表现为随着应力场的增大,偏置场的最大值变大,其最大值所对应的位置逐渐远离易轴.在外磁场与易轴成一定角度时,交换偏置场向左移动,并且阻碍沿磁场方向的磁化随着应力场的增加;当应力场旋转90°时,偏置场随外磁场角度依赖关系表现为随着应力场的增大,偏置场的最大值减小,其最大值所对应的位置逐渐靠近易轴.在外磁场与易轴成一定角度时,交换偏置场向右移动,并且促进沿磁场方向的磁化随着应力场的增加.     

铁磁材料磁化涡旋在应变作用下的响应简

磁化涡旋是微米/亚微米铁磁材料中一种常见的磁畴结构，由于它可以被用于高密度的磁性存储设备中，近年来受到了人们的广泛关注。本文基于随时间变化的Ginzburg-Landau方程，采用实空间下的相场模型研究了铁磁材料中磁化涡旋的力磁耦合行为，探讨了铁磁纳米圆柱体中自发磁化涡旋形态以及该结构在沿圆柱体轴向应变作用下的响应行为。结果表明，沿圆柱体轴向的应变对面内磁化分量的幅值和分布影响十分微弱，但对垂直于圆柱体表面磁化分量的影响却十分明显，具体表现为平面外磁化分量的幅值将随着拉应变的增大而增大，又会伴随压应变的增大而减小。随着平面外磁化分量的增加，则更容易探测到该磁化涡旋的极性情况，从而有利于实验观察和实际应用。     

用表面磁光克尔效应测量材料表面磁特性的研究

用表面磁光克尔效应测量铁磁材料的磁滞回线，并求得在饱和状态下的克尔旋转角．对于很多磁性薄膜，易磁轴方向为纵向，通常纵向克尔效应较明显．用自制装置可研究磁性材料表面的磁性质，现此实验已在近代物理实验中应用．     

Magnetic phase control by an electric field

The quest for higher data density in information storage is motivating investigations into approaches for manipulating magnetization by means other than magnetic fields. This is evidenced by the recent boom in magnetoelectronics and 'spintronics', where phenomena such as carrier effects in magnetic semiconductors and high-correlation effects in colossal magnetoresistive compounds are studied for their device potential. The linear magnetoelectric effect-the induction of polarization by a magnetic field and of magnetization by an electric field-provides another route for linking magnetic and electric properties. It was recently discovered that composite materials and magnetic ferroelectrics exhibit magnetoelectric effects that exceed previously known effects by orders of magnitude, with the potential to trigger magnetic or electric phase transitions. Here we report a system whose magnetic phase can be controlled by an external electric field: ferromagnetic ordering in hexagonal HoMnO3 is reversibly switched on and off by the applied field via magnetoelectric interactions. We monitor this process using magneto-optical techniques and reveal its microscopic origin by neutron and X-ray diffraction. From our results, we identify basic requirements for other candidate materials to exhibit magnetoelectric phase control.     

Current-induced domain-wall switching in a ferromagnetic semiconductor structure

Magnetic information storage relies on external magnetic fields to encode logical bits through magnetization reversal. But because the magnetic fields needed to operate ultradense storage devices are too high to generate, magnetization reversal by electrical currents is attracting much interest as a promising alternative encoding method. Indeed, spin-polarized currents can reverse the magnetization direction of nanometre-sized metallic structures through torque; however, the high current densities of 10(7)-10(8) A cm(-2) that are at present required exceed the threshold values tolerated by the metal interconnects of integrated circuits. Encoding magnetic information in metallic systems has also been achieved by manipulating the domain walls at the boundary between regions with different magnetization directions, but the approach again requires high current densities of about 10(7) A cm(-2). Here we demonstrate that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 10(5) A cm(-2). The slow switching speed and low ferromagnetic transition temperature of our current system are impractical. But provided these problems can be addressed, magnetic reversal through electric pulses with reduced current densities could provide a route to magnetic information storage applications.     

Non-collinear states in magnetic sensors

Certain materials have an electrical conductivity that is extremely sensitive to an applied magnetic field; this phenomenon, termed 'giant magnetoresistance', can be used in sensor applications. Typically, such a device comprises several ferromagnetic layers, separated by non-magnetic spacer layer(s)--a so-called 'super-lattice' geometry. In the absence of a magnetic field, the ferromagnetic layers may be magnetized in opposite directions by interlayer exchange coupling, while an applied external magnetic field causes the magnetization directions to become parallel. Because the resistivity depends on the magnetization direction, an applied field that changes the magnetic configuration may be detected simply by measuring the change in resistance. In order to detect weak fields, the energy difference between different magnetization directions should be small; this is usually achieved by using many non-magnetic atomic spacer layers. Here we show, using first-principles theory, that materials combinations such as Fe/V/Co multilayers can produce a non-collinear magnetic state in which the magnetization direction between Fe and Co layers differs by about 90 degrees. This state is energetically almost degenerate with the collinear magnetic states, even though the number of non-magnetic vanadium spacer layers is quite small.     

偏转线圈三维磁场的空间谐波展开及其计算

研究了显像管等器件中偏转线圈三维磁场的空间谐波展开技术及其计算,利用空间谐波的正交性,对铁芯所产生的感应磁场强度,推导出了其各次谐波的表达式,它们与铁芯表面感应磁荷的各次谐波是阶数一一对应的,编制了一个偏转线圈三维磁场计算的程序。用此程序计算了一个偏转线圈的例子,取得了很好的结果。这为偏转线圈中三维磁场强度的计算提供了一个快速而较为准确的方法,可用于显像管磁偏转系统的模拟和研制中。     

磁性多层膜的磁滞回线和磁阻曲线的唯像理论研究

基于相干转动的局域能量极小模型和经典的热激活模型研究了包含二次、双二次耦合的磁性多层膜的磁化过程。计算结果表明双二次耦合和磁层的层数对多层膜的磁相图、磁滞回线、磁阻曲线都有重要的影响。在有限温度下，热激活使得磁性多层膜的磁状态间发生跳跃而达到动态平衡。当引入了具有高斯分布的微磁畴元后，计算了系统的磁状态，得到了不同温度下的磁滞回线和磁阻曲线。计算结果较好地解释了形态各异的磁滞回线和磁阻曲线。