The ultimate speed of magnetic switching in granular recording media

In magnetic memory devices, logical bits are recorded by selectively setting the magnetization vector of individual magnetic domains either 'up' or 'down'. In such devices, the fastest and most efficient recording method involves precessional switching: when a magnetic field B(p) is applied as a write pulse over a period tau, the magnetization vector precesses about the field until B(p)tau reaches the threshold value at which switching occurs. Increasing the amplitude of the write pulse B(p) might therefore substantially shorten the required switching time tau and allow for faster magnetic recording. Here we use very short pulses of a very high magnetic field to show that under these extreme conditions, precessional switching in magnetic media supporting high bit densities no longer takes place at well-defined field strengths; instead, switching occurs randomly within a wide range of magnetic fields. We attribute this behaviour to a momentary collapse of the ferromagnetic order of the spins under the load of the short and high-field pulse, thus establishing an ultimate limit to the speed of deterministic switching and magnetic recording.     

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.     

Magnetization vector manipulation by electric fields

Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampère field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.     

Current-induced resonance and mass determination of a single magnetic domain wall

A magnetic domain wall (DW) is a spatially localized change of magnetization configuration in a magnet. This topological object has been predicted to behave at low energy as a composite particle with finite mass. This particle will couple directly with electric currents as well as magnetic fields, and its manipulation using electric currents is of particular interest with regard to the development of high-density magnetic memories. The DW mass sets the ultimate operation speed of these devices, but has yet to be determined experimentally. Here we report the direct observation of the dynamics of a single DW in a ferromagnetic nanowire, which demonstrates that such a topological particle has a very small but finite mass of 6.6 x 10(-23) kg. This measurement was realized by preparing a tunable DW potential in the nanowire, and detecting the resonance motion of the DW induced by an oscillating current. The resonance also allows low-current operation, which is crucial in device applications; a DW displacement of 10 microm was induced by a current density of 10(10) A m(-2).     

Ultrafast precessional magnetization reversal by picosecond magnetic field pulse shaping

Since the invention of the first magnetic memory disk in 1954, much effort has been put into enhancing the speed, bit density and reliability of magnetic memory devices. In the case of magnetic random access memory (MRAM) devices, fast coherent magnetization rotation by precession of the entire memory cell is desired, because reversal by domain-wall motion is much too slow. In principle, the fundamental limit of the switching speed via precession is given by half of the precession period. However, under-critically damped systems exhibit severe ringing and simulations show that, as a consequence, undesired back-switching of magnetic elements of an MRAM can easily be initiated by subsequent write pulses, threatening data integrity. We present a method to reverse the magnetization in under-critically damped systems by coherent rotation of the magnetization while avoiding any ringing. This is achieved by applying specifically shaped magnetic field pulses that match the intrinsic properties of the magnetic elements. We demonstrate, by probing all three magnetization components, that reliable precessional reversal in lithographically structured micrometre-sized elliptical permalloy elements is possible at switching times of about 200 ps, which is ten times faster than the natural damping time constant.     

Phase-locking in double-point-contact spin-transfer devices

Spin-transfer in nanometre-scale magnetic devices results from the torque on a ferromagnet owing to its interaction with a spin-polarized current and the electrons' spin angular momentum. Experiments have detected either a reversal or high-frequency (GHz) steady-state precession of the magnetization in giant magnetoresistance spin valves and magnetic tunnel junctions with current densities of more than 10(7) A cm(-2). Spin-transfer devices may enable high-density, low-power magnetic random access memory or direct-current-driven nanometre-sized microwave oscillators. Here we show that the magnetization oscillations induced by spin-transfer in two 80-nm-diameter giant-magnetoresistance point contacts in close proximity to each other can phase-lock into a single resonance over a frequency range from approximately <10 to >24 GHz for contact spacings of less than about approximately 200 nm. The output power from these contact pairs with small spacing is approximately twice the total power from more widely spaced (approximately 400 nm and greater) contact pairs that undergo separate resonances, indicating that the closely spaced pairs are phase-locked with zero phase shift. Phase-locking may enable control of large arrays of coupled spin-transfer devices with increased power output for microwave oscillator applications.     

Magnetic vortex core reversal by excitation with short bursts of an alternating field

The vortex state, characterized by a curling magnetization, is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of micrometre size and below. The interplay between the magnetostatic and the exchange energy favours an in-plane, closed flux domain structure. This curling magnetization turns out of the plane at the centre of the vortex structure, in an area with a radius of about 10 nanometres--the vortex core. The vortex state has a specific excitation mode: the in-plane gyration of the vortex structure about its equilibrium position. The sense of gyration is determined by the vortex core polarization. Here we report on the controlled manipulation of the vortex core polarization by excitation with small bursts of an alternating magnetic field. The vortex motion was imaged by time-resolved scanning transmission X-ray microscopy. We demonstrate that the sense of gyration of the vortex structure can be reversed by applying short bursts of the sinusoidal excitation field with amplitude of about 1.5 mT. This reversal unambiguously indicates a switching of the out-of-plane core polarization. The observed switching mechanism, which can be understood in the framework of micromagnetic theory, gives insights into basic magnetization dynamics and their possible application in data storage.     

复相多铁材料中电场调控自旋的翻转

电场调控的自旋翻转因在低能耗高密度的新型存储器件中有巨大的应用潜力而受到人们的广泛关注.在复相多铁材料中,利用磁电耦合效应有可能实现电场调控自旋的翻转.我们在CoPt/PMN-PT异质结中,利用电场调控矫顽力的变化,实现了电场调控自旋的翻转.在铁磁形状记忆合金Mn-Ni-Sn与0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3组成的复合材料中,通过电场调控交换偏置场的变化,无需偏置磁场就可以实现电场调控自旋的翻转.     

自旋极化电流驱动下磁涡旋的旋转回归运动和手征性反转

将方向为（-1,1,-1）的3个自旋极化电流通入纳米盘, 用OOMMF(object oriented micromagnetic framework）软件分析自旋极化电流大小和位置分布对磁涡旋动力学行为的影响. 结果表明： 磁涡旋核做旋转回归运动时, 最大速度在轨迹上的位置相对固定, 利用该性质， 可在最大速度处引入缺陷, 使磁涡旋核运动到缺陷处被钉扎并发生反转, 从而实现磁涡旋核极性的可控反转； 通过改变极化电流的大小或位置, 可调节磁涡旋核旋转回归运动频率的大小； 在高电流密度区域, 可实现磁涡旋手征性反转, 且反转时间较短； 与极化电流位置对称分布相比, 其手征性反转的电流范围变大, 达到暂态构型的时间变短.      

成份依赖的软磁材料CoFeB和CoFeSiB

采用磁控溅射技术制备了两种不同的富钴非晶磁性材料CoFeB和CoFeSiB.对它们的磁特性与成分的依赖关系以及作为磁性隧道结自由层的翻转特性进行了研究.在大块材料样品状态下(厚度约为1μm),CoFeB的矫顽力可达到2.51×10-2A/m,CoFeSiB则显示出1.25×10-2A/m的矫顽力.而对于磁性隧道结的磁电阻测量表明:CoFeB薄膜的自旋极化对钴含量非常敏感,从而导致隧道结磁电阻值也发生明显的变化.相比较而言,CoFeSiB的翻转特性由于钴含量的变化而受到很大影响,而自旋极化对钴含量的依赖不甚明显,在很高的钴含量(80%)时达到饱和.结果表明,通过适当的调整非金属元素Si和B的含量,可以很好的调整CoFeSiB的软磁性能而有望满足下一代高密度自旋电子学器件对于材料的苛刻要求.     

Strongly linked current flow in polycrystalline forms of the superconductor MgB2

The discovery of superconductivity at 39 K in magnesium diboride, MgB2, raises many issues, a critical one being whether this material resembles a high-temperature copper oxide superconductor or a low-temperature metallic superconductor in terms of its behaviour in strong magnetic fields. Although the copper oxides exhibit very high transition temperatures, their in-field performance is compromized by their large anisotropy, the result of which is to restrict high bulk current densities to a region much less than the full magnetic-field-temperature (H-T) space over which superconductivity is found. Moreover, the weak coupling across grain boundaries makes transport current densities in untextured polycrystalline samples low and strongly sensitive to magnetic field. Here we report that, despite the multiphase, untextured, microscale, subdivided nature of our MgB2 samples, supercurrents flow throughout the material without exhibiting strong sensitivity to weak magnetic fields. Our combined magnetization, magneto-optical, microscopy and X-ray investigations show that the supercurrent density is mostly determined by flux pinning, rather than by the grain boundary connectivity. Our results therefore suggest that this new superconductor class is not compromized by weak-link problems, a conclusion of significance for practical applications if higher temperature analogues of this compound can be discovered.     

自旋极化电流驱动下磁涡旋的旋转回归运动和手征性反转

将方向为（-1,1,-1）的3个自旋极化电流通入纳米盘, 用OOMMF(object oriented micromagnetic framework）软件分析自旋极化电流大小和位置分布对磁涡旋动力学行为的影响. 结果表明： 磁涡旋核做旋转回归运动时, 最大速度在轨迹上的位置相对固定, 利用该性质， 可在最大速度处引入缺陷, 使磁涡旋核运动到缺陷处被钉扎并发生反转, 从而实现磁涡旋核极性的可控反转； 通过改变极化电流的大小或位置, 可调节磁涡旋核旋转回归运动频率的大小； 在高电流密度区域, 可实现磁涡旋手征性反转, 且反转时间较短； 与极化电流位置对称分布相比, 其手征性反转的电流范围变大, 达到暂态构型的时间变短.      

Magnetic phase control by an electric field

The quest for higher data density in information storage is motivating investigations into approaches for manipulating magnetization by means other than magnetic fields. This is evidenced by the recent boom in magnetoelectronics and 'spintronics', where phenomena such as carrier effects in magnetic semiconductors and high-correlation effects in colossal magnetoresistive compounds are studied for their device potential. The linear magnetoelectric effect-the induction of polarization by a magnetic field and of magnetization by an electric field-provides another route for linking magnetic and electric properties. It was recently discovered that composite materials and magnetic ferroelectrics exhibit magnetoelectric effects that exceed previously known effects by orders of magnitude, with the potential to trigger magnetic or electric phase transitions. Here we report a system whose magnetic phase can be controlled by an external electric field: ferromagnetic ordering in hexagonal HoMnO3 is reversibly switched on and off by the applied field via magnetoelectric interactions. We monitor this process using magneto-optical techniques and reveal its microscopic origin by neutron and X-ray diffraction. From our results, we identify basic requirements for other candidate materials to exhibit magnetoelectric phase control.     

Ultrafast generation of magnetic fields in a Schottky diode.

For the development of future magnetic data storage technologies, the ultrafast generation of local magnetic fields is essential. Subnanosecond excitation of the magnetic state has so far been achieved by launching current pulses into micro-coils and micro-striplines and by using high-energy electron beams. Local injection of a spin-polarized current through an all-metal junction has been proposed as an efficient method of switching magnetic elements, and experiments seem to confirm this. Spin injection has also been observed in hybrid ferromagnetic-semiconductor structures. Here we introduce a different scheme for the ultrafast generation of local magnetic fields in such a hybrid structure. The basis of our approach is to optically pump a Schottky diode with a focused, approximately 150-fs laser pulse. The laser pulse generates a current across the semiconductor-metal junction, which in turn gives rise to an in-plane magnetic field. This scheme combines the localization of current injection techniques with the speed of current generation at a Schottky barrier. Specific advantages include the ability to rapidly create local fields along any in-plane direction anywhere on the sample, the ability to scan the field over many magnetic elements and the ability to tune the magnitude of the field with the diode bias voltage.     

Charge-ordered ferromagnetic phase in La(0.5)Ca(0.5)MnO3

Mixed-valent manganites are noted for their unusual magnetic, electronic and structural phase transitions. For example, the La(1-x)Ca(x)MnO(3) phase diagram shows that below transition temperatures in the range 100-260 K, compounds with 0.2 < x < 0.5 are ferromagnetic and metallic, whereas those with 0.5 < x < 0.9 are antiferromagnetic and charge ordered. In a narrow region around x = 0.5, these totally dissimilar ground states are thought to coexist. It has been shown that charge order and charge disorder can coexist in the related compound, La(0.25)Pr(0.375)Ca(0.375)MnO(3). Here we present electron microscopy data for La(0.5)Ca(0.5)MnO(3) that shed light on the distribution of these coexisting phases, and uncover an additional, unexpected phase. Using electron holography and Fresnel imaging, we find micrometre-sized ferromagnetic regions spanning several grains coexisting with similar-sized regions with no local magnetization. Holography shows that the ferromagnetic regions have a local magnetization of 3.4 +/- 0.2 Bohr magnetons per Mn atom (the spin-aligned value is 3.5 micro (B) per Mn). We use electron diffraction and dark-field imaging to show that charge order exists in regions with no net magnetization and, surprisingly, can also occur in ferromagnetic regions.     

铁磁材料磁化涡旋在应变作用下的响应简

磁化涡旋是微米/亚微米铁磁材料中一种常见的磁畴结构，由于它可以被用于高密度的磁性存储设备中，近年来受到了人们的广泛关注。本文基于随时间变化的Ginzburg-Landau方程，采用实空间下的相场模型研究了铁磁材料中磁化涡旋的力磁耦合行为，探讨了铁磁纳米圆柱体中自发磁化涡旋形态以及该结构在沿圆柱体轴向应变作用下的响应行为。结果表明，沿圆柱体轴向的应变对面内磁化分量的幅值和分布影响十分微弱，但对垂直于圆柱体表面磁化分量的影响却十分明显，具体表现为平面外磁化分量的幅值将随着拉应变的增大而增大，又会伴随压应变的增大而减小。随着平面外磁化分量的增加，则更容易探测到该磁化涡旋的极性情况，从而有利于实验观察和实际应用。     

Magnetoresistive behavior and magnetization reversal of NiFe/Cu/CoFe/IrMn spin valve GMRs in nanoscale

The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance (SV-GMR) in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio (MR) and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.     

Electric-field control of ferromagnetism

It is often assumed that it is not possible to alter the properties of magnetic materials once they have been prepared and put into use. For example, although magnetic materials are used in information technology to store trillions of bits (in the form of magnetization directions established by applying external magnetic fields), the properties of the magnetic medium itself remain unchanged on magnetization reversal. The ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints, particularly in view of recent developments in magnetoelectronics and spintronics. In semiconductors, the conductivity can be varied by applying an electric field, but the electrical manipulation of magnetism has proved elusive. Here we demonstrate electric-field control of ferromagnetism in a thin-film semiconducting alloy, using an insulating-gate field-effect transistor structure. By applying electric fields, we are able to vary isothermally and reversibly the transition temperature of hole-induced ferromagnetism.     

Ultrafast non-thermal control of magnetization by instantaneous photomagnetic pulses

The demand for ever-increasing density of information storage and speed of manipulation has triggered an intense search for ways to control the magnetization of a medium by means other than magnetic fields. Recent experiments on laser-induced demagnetization and spin reorientation use ultrafast lasers as a means to manipulate magnetization, accessing timescales of a picosecond or less. However, in all these cases the observed magnetic excitation is the result of optical absorption followed by a rapid temperature increase. This thermal origin of spin excitation considerably limits potential applications because the repetition frequency is limited by the cooling time. Here we demonstrate that circularly polarized femtosecond laser pulses can be used to non-thermally excite and coherently control the spin dynamics in magnets by way of the inverse Faraday effect. Such a photomagnetic interaction is instantaneous and is limited in time by the pulse width (approximately 200 fs in our experiment). Our finding thus reveals an alternative mechanism of ultrafast coherent spin control, and offers prospects for applications of ultrafast lasers in magnetic devices.     

Non-collinear states in magnetic sensors

Certain materials have an electrical conductivity that is extremely sensitive to an applied magnetic field; this phenomenon, termed 'giant magnetoresistance', can be used in sensor applications. Typically, such a device comprises several ferromagnetic layers, separated by non-magnetic spacer layer(s)--a so-called 'super-lattice' geometry. In the absence of a magnetic field, the ferromagnetic layers may be magnetized in opposite directions by interlayer exchange coupling, while an applied external magnetic field causes the magnetization directions to become parallel. Because the resistivity depends on the magnetization direction, an applied field that changes the magnetic configuration may be detected simply by measuring the change in resistance. In order to detect weak fields, the energy difference between different magnetization directions should be small; this is usually achieved by using many non-magnetic atomic spacer layers. Here we show, using first-principles theory, that materials combinations such as Fe/V/Co multilayers can produce a non-collinear magnetic state in which the magnetization direction between Fe and Co layers differs by about 90 degrees. This state is energetically almost degenerate with the collinear magnetic states, even though the number of non-magnetic vanadium spacer layers is quite small.