Current-induced domain-wall switching in a ferromagnetic semiconductor structure

Magnetic information storage relies on external magnetic fields to encode logical bits through magnetization reversal. But because the magnetic fields needed to operate ultradense storage devices are too high to generate, magnetization reversal by electrical currents is attracting much interest as a promising alternative encoding method. Indeed, spin-polarized currents can reverse the magnetization direction of nanometre-sized metallic structures through torque; however, the high current densities of 10(7)-10(8) A cm(-2) that are at present required exceed the threshold values tolerated by the metal interconnects of integrated circuits. Encoding magnetic information in metallic systems has also been achieved by manipulating the domain walls at the boundary between regions with different magnetization directions, but the approach again requires high current densities of about 10(7) A cm(-2). Here we demonstrate that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 10(5) A cm(-2). The slow switching speed and low ferromagnetic transition temperature of our current system are impractical. But provided these problems can be addressed, magnetic reversal through electric pulses with reduced current densities could provide a route to magnetic information storage applications.     

转子-轴承系统中电磁作动器的Ansys仿真及实验研究

通过有限元软件对电磁作动器进行实验工况下的三维有限元仿真,分析在不同电流和转子定子间气隙下的电磁力;建立了电磁作动器电磁力测量装置,对相应电流和间隙下的电磁力进行静态工况下的测量,验证磁场分析结果的准确性。在此基础上根据模拟数据预测轴承的电流刚度和位移刚度,并分析逐渐增大电流达到磁饱和时电磁力随电流变化规律。研究结果表明,基于Ansys软件的三维有限元分析得出的静态电磁力与实验值相比误差小于10%, Ansys软件能够较准确的模拟电磁轴承静态时的电磁力及相应的电流刚度和位移刚度。     

Nonlinear dependence of anomalous resistivity on the reconnecting electric field in the Earth’s magnetotail

Based upon the observational data of the fast magnetic reconnection in the nearly collisionless magnetotail and the particle in cell (PIC)simulations on the electron acceleration in the reconnecting current sheet with guide magnetic field,we self consistently solved one dimension Vlasov equation with the magnetotail parameters and realistic mass ratio to explore the relationship between the anomalous resistivity and the induced electric field.As compared with theoretic formula for the current driven ion-acoustic and Buneman anomalous resistivity,the anomalous resistivity may result from the ion acoustic instability for small reconnecting electric field and the Buneman instability for large reconnecting electric field.The discrepancy between the theoretic results and numerical simulations may be caused by the high frequency instability that results from the deviation of electron distribution from Maxwellian one.These results are consistent with the early experimental results and favorable for the fast reconnection to take place.     

纳米带中涡旋畴壁在磁场驱动下的振荡行为

利用微磁学模拟软件(OOMMF),对坡莫合金纳米带中涡旋畴壁在略高于Walker极限的磁场驱动下的动力学行为进行模拟,分析外磁场强度、纳米带尺寸及自旋极化电流对畴壁振荡频率的影响。结果表明,纳米带中涡旋畴壁的振荡频率随外磁场强度的增大而增加,随着纳米带宽度的增加呈先增加后减小再增大最后基本保持不变的趋势;外加与磁场方向相反的平衡电流,虽然不改变畴壁振荡频率随外磁场强度和纳米带宽度的变化规律,但能起到减小畴壁振荡频率的作用,且平衡电流随外磁场强度和纳米带宽度的变化趋势与畴壁振荡频率基本相反,而其随着阻尼系数的增大而线性增加。     

Spin-galvanic effect

There is much recent interest in exploiting the spin of conduction electrons in semiconductor heterostructures together with their charge to realize new device concepts. Electrical currents are usually generated by electric or magnetic fields, or by gradients of, for example, carrier concentration or temperature. The electron spin in a spin-polarized electron gas can, in principle, also drive an electrical current, even at room temperature, if some general symmetry requirements are met. Here we demonstrate such a 'spin-galvanic' effect in semiconductor heterostructures, induced by a non-equilibrium, but uniform population of electron spins. The microscopic origin for this effect is that the two electronic sub-bands for spin-up and spin-down electrons are shifted in momentum space and, although the electron distribution in each sub-band is symmetric, there is an inherent asymmetry in the spin-flip scattering events between the two sub-bands. The resulting current flow has been detected by applying a magnetic field to rotate an optically oriented non-equilibrium spin polarization in the direction of the sample plane. In contrast to previous experiments, where spin-polarized currents were driven by electric fields in semiconductor, we have here the complementary situation where electron spins drive a current without the need of an external electric field.     

Spin electromagnetic field and dipole: A localized and quantized field

This paper investigates the structure of a spin electromagnetic (EM) field and its various physical properties. A spin EM field is an intrinsic mode of free space, which satisfies the spin equations derived from Maxwell equations. A spin mode has two basic properties: the spin along its axis and the localization of electromagnetic field. The source and EM structure of this electric and magnetic mode are described in detail in this paper. The distributed charge and current of a spin mode can be integrated to obtain the electric and magnetic moment, and they can be treated as the electromagnetic dipole. A spin mode possesses both wave and particle properties: a wave number, angular frequency and characteristic speed are its wave parameters; an intrinsic radius, energy and angular momentum are its dynamic parameters. The former is analogous to an EM resonant mode; the latter is similar to the behavior of a particle with intrinsic spin. There are two kinds of electric modes present, one can be expressed through a pair of charges, and the other can be expressed by a magnetic current. They both have the same electric moment, but have different divergence properties.     

有限厚铁磁性试件脉冲涡流响应研究

提出了通过直接分析瞬变涡流和感应磁场来研究被测试件脉冲涡流响应的方法.在实验验证的基础上,采用数值模拟的方法计算得到了有限厚铁磁性试件的脉冲涡流响应.研究了试件中涡流扩散规律并将脉冲涡流响应分为前后2个阶段,将相同时间点不同电阻率、磁导率模型的响应曲线及感应电压随时间变化的曲线进行拟合,得到了感应电压与电阻率、磁导率及时间的关系.结果表明:脉冲涡流前期感应电压按试件电阻率的0.5次幂、磁导率的0.5次幂进行衰减,按时间的1.5次幂进行衰减;后期感应电压随时间按照负指数规律衰减,指数衰减系数与试件电阻率成正比,与磁导率成反比.     

超越基本粒子标准模型的某些问题

长期受实验支持的标准模型,它的某些基本原理最近已受到实验事实的责难．如:EMC组发现的EMC效应;CLEO组发现的味变中性流夸克转换过程;CDF组发现夸克有结构的迹象及HERA的HI和ZEUS机发现的〖AKl-〗-q共振预示可能存在更深层次的物理;超神冈实验指出中微子有质量、混合和振荡;多家实验发现光子的夸克／胶子结构,轻子有“反常磁矩”等．这些实验事实都背离了标准模型的基本原理,对其重新审视是必要的．     

Nightside field-aligned current during the April 6, 2000 superstorm

Using the east-west geomagnetic disturbance fields observed from stations at mid-latitudes, we investigate the characteristics of field-aligned currents on the nightside during the April 6, 2000 superstorm. The results indicate that there is an eastward disturbance on the nightside of Northern Hemisphere during the main phase of magnetic storm, while the interplanetary magnetic field (IMF) is continued southward. The positive disturbances in the postmidnight are larger than that in the premidnight. This suggests that upward field-aligned currents develop on the nightside, when the IMF is directed southward. The peak of upward field- aligned currents is located in postmidnight, and it will be more obvious at substorm expansion. We get the conclusion that both partial ring current and region-2 field-aligned current shift to dusk sector. The upward region-2 current is decreased at substorm onset, and intensified after it. We also investigate the relationship between the upward field-aligned currents on the nightside and the auroral electrojets at high latitudes. It shows a good correspondence between region-2 current and the westward electrojet in the postmidnight. We suppose that they are both associated with the convection electric field.     

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.     

A topological Dirac insulator in a quantum spin Hall phase

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi(1-x)Sb(x) single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher-dimensional analogues of the edge states that characterize a quantum spin Hall insulator. In addition to its interesting boundary states, the bulk of Bi(1-x)Sb(x) is predicted to exhibit three-dimensional Dirac particles, another topic of heightened current interest following the new findings in two-dimensional graphene and charge quantum Hall fractionalization observed in pure bismuth. However, despite numerous transport and magnetic measurements on the Bi(1-x)Sb(x) family since the 1960s, no direct evidence of either topological Hall states or bulk Dirac particles has been found. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy (IPEM-ARPES), we report the direct observation of massive Dirac particles in the bulk of Bi(0.9)Sb(0.1), locate the Kramers points at the sample's boundary and provide a comprehensive mapping of the Dirac insulator's gapless surface electron bands. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the 'topological metal'. They also suggest that this material has potential application in developing next-generation quantum computing devices that may incorporate 'light-like' bulk carriers and spin-textured surface currents.     

在感应电场下射频电流驱动与等离子体平衡

本文从漂移动力论准线性Ｆｏｋｋｅｒ一Ｐｌａｎｃｋ方程出发，推导出在感应电场存在下，射频波驱动等离子体电流由新经典电流ｊＮＣ、射频驱动电流ｊＲＦ、欧姆电流ｊｏｈ和附加电流ｊｌ组成，并给出了在高相速度极限下的解析式．在密度、温度分布给定下，若与波迹方程和波功率变化方程相结合，可以求出ｊｌｌＢ在极向通量表面上的平均值（ｊｌｌＢ），从而可以求解描述等离子体平衡的Ｇｒａｄ－Ｓｈａｆｒａｎｏｖ方程，获得自洽的通量以及等离子体的平衡参量．     

圆柱形推拉式电磁铁的电磁力数值算法

电磁力是推拉式电磁铁非常重要的参数,但由于磁场的非线性变化,解析计算困难。针对这一问题,本文研究利用柱状坐标系下的磁矢量势理论求解圆柱形推拉式电磁铁的电磁力。将整个螺线管磁场划分为多个子域并明确边界条件得到可求数值解的子域磁矢量方程组,再通过MATLAB软件编程实现磁矢量势、电感和电磁力等电磁特性数据的计算。对比有限元中铁芯磁导率分别为恒定值10000和电工软铁的B-H曲线两种情况,说明了该数值算法的计算准确度及误差变化趋势,并分析了误差形成的原因。随着电流的加大铁芯会发生磁饱和,当磁饱和问题不严重时,数值算法的计算结果具有高准确度;随着电流的增加,铁芯发生磁饱和后误差迅速增加。实验中给圆柱形推拉式电磁铁施加不同大小的励磁电流,得到的输出推力结果与理论分析相符。     

电沉积Ni纳米线阵列及其磁学性能研究

为了解决因受阳极氧化铝(AAO)孔道直径限制导致合成的金属纳米线尺寸单一、磁性受限的问题,采用二次阳极氧化法制备了不同孔径的阳极氧化铝(AAO)模板,依据模板辅助电沉积法,在不同孔径AAO模板内生长了Ni纳米线阵列,利用SEM,TEM,XRD和EDS等技术对制备的Ni纳米线阵列形貌、微观结构和成分进行表征,通过物理性能测试系统(PPMS)研究了Ni纳米线的磁学性能。结果表明:Ni纳米线的生长机制是交流电正半周期Ni~(2+)还原与负半周期Ni原子溶解的共同作用;Ni纳米线具有磁各向异性,随着直径的增大,Ni纳米线的易磁化方向由平行于纳米线轴线方向逐渐转变为垂直于纳米线的方向,易磁化方向的转变是由有效各向异性场和磁畴结构随纳米线直径的改变而导致的。研究电沉积Ni纳米线阵列及其磁学性能,可为深入研究交流电沉积法制备磁性纳米线的生长机制和磁性纳米线的磁化机理提供理论和实验依据,为拓宽纳米线的应用领域奠定基础。     

AB规范场中的拓扑效应和动力学效应

采用路径积分的方法分析AB规范场中平面转子在定态磁通和随时间变化磁通两种情况下的本征函数和本征值,定态磁通使空间发生扭曲产生了拓扑位相,而变化磁通产生感生电场,使带电粒子在力矩的作用下发生定轴旋转正好抵消了磁通规范场产生的扭曲,因此同伦类传播子的动力学对称性无破缺.     

导电介质中磁感应电场和电流分布的有限元法求解

根据Ｗａｎｇ和Ｓｏｌｏｍａｎ等人的思想，用有限元方法计算了均匀各向同性、均匀各向异性、非均匀各向异性及外加非均匀磁场导电介质的磁感应电场和电流分布．所得结果与其它分析方法所得结果一致．     

感生电流对软接触结晶器内磁感应强度的影响

利用有限元程序对矩形坯电磁软接触连铸结晶器内的电磁场和感生电流分布进行了模拟计算,研究了频率、结晶器材质电导率、结晶器结构等参数对结晶器上感生电流和结晶器内磁感应强度的影响以及感生电流对结晶器内磁场的影响.计算结果表明:电磁软接触连铸结晶器分瓣体上的感生电流产生的磁场对结晶器内部的磁场有十分重要的影响,合理利用感生电流可以增大结晶器内部的磁感应强度,达到节约能源的目的.在一定的频率段范围内,感生电流产生的磁场能增大结晶器内的磁感应强度,而超出这个范围,感生电流对结晶器内磁场的影响不够明显.在高频条件下,结晶器内的磁感应强度主要以外部线圈产生的磁场的透入为主;而频率较低时,有必要充分考虑和利用感...     

磁粉离合器在锂带轧机张力控制系统中的应用

分析了张力对薄带材轧制过程的影响,利用磁粉离合器的激磁电流与转矩成线性关系这一特性,设计了闭环张力控制系统。该系统由张力传感器、张力控制仪和磁粉离合器等部分构成,结构简单,性能稳定。     

高性能Fe—Co合金有序纳米线阵列的制备与磁性研究

采用两步电化学阳极氧化方法制备了有序多孔氧化铝模板,通过交流电化学沉积方法在模板中合成了线间距约为62nm、直径约为25nm的Fe48Co52合金纳米线阵列,细致研究了阵列的晶体结构与磁性能．研究表明：沉积态阵列具有体心立方结构．氢气退火处理对阵列的晶体结构没有影响,但是会显著提高阵列的磁性能．退火后,Fe—Co合金纳米线阵列显示了较高的永磁性能,其易磁化方向的矫顽力、矩形度以及单根纳米线的最大磁能积分别约为3．63kOe、0．971以及33．7mol／dm^3 GOe．     

双开口劈裂方环/方形环中磁法诺共振的调控

基于有限元法,从理论上研究了双开口劈裂方环/方形环纳米结构(double split ringsquare ring,DSR-SR)中的等离子体共振和局域电磁场增强等光学特性.由于方形内环的亮模式和双开口劈裂环的暗模式的相互干涉,在该结构中产生了磁法诺共振现象,通过改变该结构的几何参数,可以实现对共振峰位置和强度的有效调控.计算结果表明,该结构中的共振峰对周围介质折射率变化敏感,品质因子最高可达到25.3,并且各共振峰处的局域电场和局域磁场都有很大增强.基于该结构的这些性质,它可以应用于传感器、多光谱表面增强光谱学、低损耗的磁性等离激元的传播和其他基于磁性法诺的光学器件.