伪半固态挤压成形制备高体积分数SiCp/Al复合材料的性能

采用伪半固态挤压工艺制备SiC体积分数为40%、50%、65%的SiCp/Al复合材料,并对其微观组织和性能进行研究.结果表明:制备的高体积分数SiCp/Al复合材料中SiC颗粒分布均匀,铝合金填充在SiC缝隙中,形成致密组织.Mg和SiO2均能改善SiC颗粒与Al的界面润湿性,增加界面结合强度.所制得的φ(SiC)=65%的复合材料密度为3.11g/cm3,表面硬度为HB 108.5,抗折强度302.1 MPa,热膨胀率低于5.6×10-6/K,热导率为74 W/(m·K);SiC与Al基体界面的破坏以脱粘机制为主.     

压制压力对Si-Al电子封装材料性能的影响

采用粉末冶金液相烧结工艺制备Si-50Al电子封装材料,研究了压制压力对材料性能的影响.研究结果表明:增大压制压力可提高材料致密度,有效地促进界面的反应结合,使材料热导率提高;但当压制压力过大时,由于Si颗粒发生开裂甚至解理,界面热阻急剧上升,导致热导率下降;高压制压力导致Si-Al体系在945 ℃附近出现1个放热过程,这个放热过程对应于该温度下氧化铝薄膜的破裂以及随后Al与 Si颗粒表层SiO2的界面反应;诱发Al 和SiO2反应的是高压制压力所造成的界面处储能,这使体系润湿性大幅度提高,改善了材料的热导性能.     

6066Al/SiCP复合材料的组织特征与阻尼性能

研究了经制粉→混料→真空抽气→热挤压工艺制备的6066Al/SiCp复合材料的组织特征与阻尼性能.复合材料的阻尼特征通过动态机械热分析仪(DMTA)测量,得出了2种不同SiC含量的6066Al/SiCp复合材料及6066Al合金在温度为30～250℃,频率为0.1,1,10和30Hz时的阻尼值.利用扫描电镜、光学显微镜对复合材料组织特征进行了分析,根据组织特征及阻尼数据对复合材料的阻尼机制进行了讨论.结果表明将2～3μm的SiC颗粒加入6066Al中,当SiC含量为7%(体积分数)时,增强的SiC颗粒分布较均匀,与基体结合良好;当SiC含量为12%时,SiC易聚集成团.少量SiC能明显提高6066Al的阻尼能力,尤其是高温阻尼性能;6066Al/SiCp复合材料的高阻尼性能主要是SiC颗粒加入后使位错密度大大增加,基体晶界及基体与SiC颗粒界面的存在使材料在循环载荷下消耗能量所致.     

电铸Ni-SiC金属基复合材料的抗拉强度与微观结构分析

在氨基磺酸镍镀液中电铸制备了两种不同SiC微粒含量的复合材料,研究了热处理对复合材料的抗拉强度和微观组织的影响.研究表明,300℃热处理提高了两种复合材料的强度;但600℃热处理却降低了强度.基体金属Ni与SiC颗粒在600℃完全反应后,界面反应产物是Ni3Si、游离石墨和少量的Ni31Si12,并且产生相当于SiC微粒体积8%的微孔.断裂过程经历微裂纹萌生、长大和聚集,以基体断裂、界面脱粘和微粒断裂三种方式进行.     

6066Al/SiC_p复合材料的组织特征与阻尼性能

研究了经制粉→混料→真空抽气→热挤压工艺制备的 6 0 6 6Al SiCp 复合材料的组织特征与阻尼性能 .复合材料的阻尼特征通过动态机械热分析仪 (DMTA)测量 ,得出了 2种不同SiC含量的 6 0 6 6Al SiCp 复合材料及 6 0 6 6Al合金在温度为 30～ 2 5 0℃ ,频率为 0 .1,1,10和 30Hz时的阻尼值 .利用扫描电镜、光学显微镜对复合材料组织特征进行了分析 ,根据组织特征及阻尼数据对复合材料的阻尼机制进行了讨论 .结果表明 :将 2～ 3μm的SiC颗粒加入6 0 6 6Al中 ,当SiC含量为 7% (体积分数 )时 ,增强的SiC颗粒分布较均匀 ,与基体结合良好 ;当SiC含量为 12 %时 ,SiC易聚集成团 .少量SiC能明显提高 6 0 6 6Al的阻尼能力 ,尤其是高温阻尼性能 ;6 0 6 6Al SiCp 复合材料的高阻尼性能主要是SiC颗粒加入后使位错密度大大增加 ,基体晶界及基体与SiC颗粒界面的存在使材料在循环载荷下消耗能量所致 .     

喷射沉积Al-20Si/SiCp复合材料的热疲劳行为

采用V型缺口试样对喷射沉积Al-20Si/SiCp复合材料进行了热循环试验,用光学金相显微镜和扫描电镜研究了在热应力作用下的热疲劳裂纹扩展方式和形态.结果表明:热疲劳裂纹优先在V型缺口处萌生;复合材料经一定的热循环次数后随相对密度的提高,裂纹扩展速率下降;在复合材料的三大相——α-Al基体、Si相以及SiC颗粒中,α-Al基体阻碍热疲劳裂纹的扩展,裂纹非连续性扩展;裂纹扩展方式受Si相的尺寸和分布状态控制,裂纹绕过Si颗粒向前扩展以及裂纹穿过Si颗粒向前扩展是裂纹碰到Si颗粒时常出现的两种机制;SiC颗粒与热疲劳裂纹有强烈的交互作用,加强SiC颗粒与基体的界面结合有利于提高热疲劳寿命.     

纳米SiCp/108Al复合材料的组织与性能

采用粉末冶金法制备了不同体积分数SiC颗粒增强的纳米SiCp/108Al复合材料。利用光学显微镜、扫描电子显微镜、透射电子显微镜对复合材料的微观组织及拉伸断口形貌进行了表征,测定了复合材料的相对密度、硬度、抗拉强度、屈服强度及延伸率,分析了纳米SiC颗粒体积分数对复合材料组织及性能的影响。分析结果表明:添加纳米SiC颗粒的SiCp/108Al复合材料组织明显细化,性能得到提高。当纳米SiC颗粒体积分数为2%时,复合材料组织的晶粒最细小,缺陷较少,同时纳米SiC颗粒分布均匀,复合材料的性能最佳,相对密度达到98%。复合材料的硬度达到102HV,抗拉强度达到348MPa,屈服强度达到229MPa,分别比108Al基体提高了34%、26%和43%。当纳米SiC颗粒体积分数较大时,SiC颗粒会出现明显团聚现象,导致复合材料的性能降低。     

伪半固态触变成形制备SiCp/Al电子封装材料的组织与性能

采用伪半固态触变成形工艺制备了40%、56%和63%三种不同SiC体积分数颗粒增强Al基电子封装材料,并借助光学显微镜和扫描电镜分析了材料中Al和SiC的形态分布及其断口形貌,测定了材料的密度、致密度、热导率、热膨胀系数、抗压强度和抗弯强度.结果表明,通过伪半固态触变成形工艺可制备出的不同SiC体积分数Al基电子封装材料,其致密度高,热膨胀系数可控,材料中Al基体相互连接构成网状,SiC颗粒均匀镶嵌分布于Al基体中.随着SiC颗粒体积分数的增加,电子封装材料密度和室温下的热导率稍有增加,热膨胀系数逐渐减小,室温下的抗压强度和抗弯强度逐渐增加.SiC/Al电子封装材料的断裂方式为SiC的脆性断裂,同时伴随着Al基体的韧性断裂.     

颗粒增强Al基复合材料组织和性能的研究

采用高能球磨粉末冶金法制备颗粒增强Al基复合材料,分别以ZrO2,SiC和α-Al2O3为增强体,对比分析了不同颗粒增强Al基复合材料的组织与性能.以α-Al2O3颗粒为主增强体,分析了不同粒度α-Al2O3对复合材料组织性能的影响.研究结果表明,ZrO2/Al和 SiC/Al 复合材料的界面结合不如α-Al2O3/Al复合材料的界面结合紧密,α-Al2O3颗粒粒径为45μm时,复合材料性能更好地得到改善,添加适量的Ce能改善基体与增强体的界面结合,并显著地提高了颗粒增强Al基复合材料的性能.     

Al-Ti-C对Mg_2Si/Al基复合材料组织及性能的影响

针对熔体反应法制备的原位自生Mg_2Si/Al基复合材料组织粗大而导致合金性能降低现象,研究了添加不同质量的Al-Ti-C晶粒细化剂(0,0.1,0.3,0.5,1.0,3.0,5.0,10.0 wt%)对Mg_2Si/Al基复合材料组织和性能的影响。结果表明,Al-Ti-C可使Mg_2Si/Al基复合材料中的Mg_2Si颗粒细化。当添加量为0.5 wt%时,Mg_2Si颗粒由粗大菱角状变为细小圆滑状;但继续添加时会出现细化效果衰退现象。当Mg_2Si晶粒细小、分布均匀时,Mg_2Si/Al基复合材料的硬度高,摩擦性能更好。     

Wettability and pressureless infiltration mechanism in SiC-Cu systems

The wetting behavior of copper alloys on SiC substrates was studied by a sessile drop technique. The microstructure of SiC_p/Cu composites and the pressureless infiltration mechanism were analyzed. The results indicate that Ti and Cr are effective elements to improve the wettability, while Ni, Fe, and Al have minor influence on the improvement of wettability. Non-wetting to wetting transition occurs at 1210 and 1190℃ for Cu-3Al-3Ni-9Si and Cu-3Si-2Al-1Ti, respectively. All the copper alloys react with SiC at the interface forming a reaction layer except for Cu-3Al-3Ni-9Si. High Si content favors the suppression of interracial reaction. The infiltration mechanism during pressureless infiltration is attributed to the decomposition of SiC. The beneficial effect of Fe, Ni, and Al is to favor the dissolution of SiC. The real active element during pressureless infiltration is Si.     

Microstructure and properties of an Al-Ti-Cu-Si brazing alloy for SiC-metal joining

An Al-Ti-Cu-Si solid-liquid dual-phase alloy that exhibits good wettability and appropriate interfacial reaction with SiC at 500-600℃ was designed for SiC-metal joining. The microstructure, phases, differential thermal curves, and high-temperature wetting behavior of the alloy were analyzed using scanning electron microscopy, X-ray diffraction analysis, differential scanning calorimetry, and the sessile drop method. The experimental results show that the 76.5Al-8.5Ti-5Cu-10Si alloy is mainly composed of Al-Al₂Cu and Al-Si hypoeutectic low-melting-point microstructures (493-586℃) and the high-melting-point intermetallic compound AlTiSi (840℃). The contact angle, determined by high-temperature wetting experiments, is approximately 54°. Furthermore, the wetting interface is smooth and contains no obvious defects. Metallurgical bonding at the interface is attributable to the reaction between Al and Si in the alloy and ceramic, respectively. The formation of the brittle Al₄C₃ phase at the interface is suppressed by the addition of 10wt% Si to the alloy.     

Preparation and anisotropic thermophysical properties of SiC honeycomb/Al-Mg-Si composite via spontaneous infiltration

The SiC honeycomb/Al-Mg-Si composite with interpenetrated microstructure was prepared by spontaneous infiltration of Al-8 wt%Mg-7 wt%Si alloy into directional porous SiC honeycomb served as reinforcement. The microstructure and anisotropic thermophysical properties of this composite were also examined. The results showed that the initial microstructure of the SiC honeycomb can be retained and the as-prepared SiC honeycomb/Al-Mg-Si composite exhibited significantly anisotropic characteristics. Meanwhile, the alloying treatment on the Al matrix can avoid the generation of Al_4C_3 and promote the wettability between Al and SiC.Particularly,the directional porous SiC honeycomb with such a low ceramic content(19 vol.%) made it possible for the composite to have a higher thermal conductivity(138.3 W/(m?K)) in the axial direction and a lower coefficient of thermal expansion(11.40 × 10~(-6)/K) in the radial direction.The influences of the SiC honeycomb reinforcement on the anisotropic thermophysical properties were also studied by the theoretical models in comparing with the experimental results.     

Effect of sintering temperature on the microstructure and thermal conductivity of Al/diamond composites prepared by spark plasma sintering

Spark plasma sintering was used to fabricate Al/diamond composites. The effect of sintering temperature on the microstructure and thermal conductivity (TC) of the composites was investigated with the combination of experimental results and theoretical analysis. The composite sintered at 550℃ shows high relative density and strong interfacial bonding, whereas the composites sintered at lower (520℃) and higher (580–600℃) temperatures indicate no interfacial bonding and poor interfacial bonding, respectively. High relative density and strong interfacial bonding can maximize the thermal conductivity of Al/diamond composites, and taking both effects of particle shape and inhomogeneous interfacial thermal conductance into consideration can give a fairly good prediction of composites’ thermal conduction properties.     

SiCp/Al复合材料界面反应研究现状

界面反应研究是碳化硅颗粒增强的铝基复合材料研发中的重要研究方向.各国研究者分别从界面反应规律、影响因素、控制途径等方面展开研究.界面反应规律方面研究了Al合金液与SiC颗粒可能存在的界面化学反应、界面反应过程和界面反应模型、界面上的相等;界面反应影响因素方面研究了界面反应与制备工艺过程、参数的关系;界面反应有效控制途径方面研究了、基体合金化、SiC颗粒表面处理、工艺选择与工艺参数控制等.今后的界面反应研究方向为:界面精细结构的研究;界面反应的化学热力学及动力学研究等.     

三元合金及金属间化合物中各组分活度系数的计算

根据Kohler三元溶体模型和Miedema二元系统生成热模型，建立了计算三元合金及金属化合物中各组分活度系数的方程。计算了三元合金Ti-5Al-2.5Sn,Ti-6Al-4V及不同温度下金属间化合物TiAl,Ti3Al和Ti2AlNb中各组分的活度系数。并与有关实验值进行了对比.计算结果表明此公式的计算结果与实验值吻合较好，解决了固态二元、三元合金及金属间化合物中各组分的活度系数的计算问题，Ti与A1活度系数均小于1，对Raoultl定律产生负偏差。根据所计算的活度系数和活度值，预测了SiC/TiAl,SiC/Ti3Al和SiC/Ti2AlNb复合材料的界面反应，表明SiC/Ti3Al界面反应较为严重。     

Interfacial reaction between the oxidized SiC particles and Al-Mg alloys

The interfacial reactions of oxidized SiC particles reinforced Al-Mg matrix composites were investigated by the field emission-scanning electron microscopy (FE-SEM), TEM and X-ray diffraction. It was found that the nanoscale MgO forms initially due to the interfacial reaction, then whether it reacts with molten Al continuously or not depends on the content of Mg in the matrix and its covering densification at the surface of particles. When there is not enough Mg in the matrix for the formation of dense MgO layer, MgO will transform into MgAl₂O₄ crystal owing to the continuous reaction with SiO₂ and molten Al. When dense MgO layer forms at the surface of the particles due to the affluence of Mg for the initial reaction, it will protect the inner SiC from the attack of molten Al. However, the reaction products of both MgO and MgAl₂O₄ are thermo-stable phases at the surface of the particles under high temperature. The results clarify the interfacial reaction route and they are of great value to the control of the interfacial reactions and their interfacial design of the composites.     

离心铸造Zn-Al-Mg-Si合金及其自生表面复合材料

采用热模金属型工艺，离心铸造Zn-27Al-9．8Mg-5．2Si和Zn-27Al-6．3Mg-3．7Si合金，获得了内层聚集大量块状初生Mg2Si、少量初生Si，中层不含初生Mg2Si、Si，外层含有初生Mg2Si、Si的自生表面复合材料．考察了成分、模具温度、转速、变质处理对离心铸造Zn-Al-Mg-Si合金组织和结构的影响．结果表明，Zn-27Al-9．8Mg-5．2Si合金自生复合材料内、外层的厚度比Zn-27Al-6．3Mg-3．7Si的厚度厚，初生Mg2Si的数量更多；随着转速增加，Zn-Al-6．3Mg-3．7Si合金自生复合材料的内层厚度增加，外层厚度减少；Na盐变质能够细化晶粒和初生Mg2Si，使初生Mg2Si分布更均匀，使初生Si团球化．最后分析了复合材料的成形过程．     

高硅铝合金材料高温充氧氧化工艺

针对应用广泛的高硅铝合金电子封装材料,采用高温充氧氧化工艺,对已挤压成形的Al-30Si及Al-40Si高硅铝合金材料进行后续处理,通过扫描电镜、金相显微镜、热物性测试仪及电子万能拉伸试验机等,对材料显微组织、密度、气密性、热膨胀系数、热导率及抗压强度进行了分析比较。研究结果表明:高温充氧氧化后材料晶粒长大,Si含量高的材料长大更为明显,并存在Si颗粒偏聚现象;高温氧化后材料致密度增加,气密性提高;氧化后Al-30Si材料热膨胀系数略有增加,而充氧氧化对Al-40Si材料的热膨胀系数的影响不明显,但可提高材料热导率,Al-30Si与Al-40Si材料热导率分别提高16.4%和23.5%;高温氧化工艺显著降低材料抗压强度,Al-30Si与Al-40Si材料经氧化后抗压强度分别下降26.8%和20.5%。     

Microstructure characterization of a pressureless infiltrating oxidized SiCp preform by Al-8Mg

The microstructure of a pressureless infiltrating 55vol% oxidized SiC preform by Al-8Mg alloy was characterized by transmission electron microscopy (TEM), high resolution TEM (HRTEM), field emission scanning electron microscopy (FE-SEM), and X-ray diffraction. The TEM image of the interface between Al and SiC shows that the surface of SiC is covered by a rough nanocrystal layer of MgAl₂O₄, Al₂O₃, and Si, produced by the interfacial reaction of Al, Mg, and SiO₂ on the surface of SiC. The Al-SiC interface is also examined by HRTEM to be better understood how MgAl₂O₄ and Al₂O₃ are produced. Dendritic Al₂O₃ crystals are embedded in the pores of the composite generated from the mutual bonding of SiO₂ on the surface of SiC. Columnar AlN crystals of about 250 nm in length are bunched vertically on the SiC particle surface.