Ultrafast precessional magnetization reversal by picosecond magnetic field pulse shaping

Since the invention of the first magnetic memory disk in 1954, much effort has been put into enhancing the speed, bit density and reliability of magnetic memory devices. In the case of magnetic random access memory (MRAM) devices, fast coherent magnetization rotation by precession of the entire memory cell is desired, because reversal by domain-wall motion is much too slow. In principle, the fundamental limit of the switching speed via precession is given by half of the precession period. However, under-critically damped systems exhibit severe ringing and simulations show that, as a consequence, undesired back-switching of magnetic elements of an MRAM can easily be initiated by subsequent write pulses, threatening data integrity. We present a method to reverse the magnetization in under-critically damped systems by coherent rotation of the magnetization while avoiding any ringing. This is achieved by applying specifically shaped magnetic field pulses that match the intrinsic properties of the magnetic elements. We demonstrate, by probing all three magnetization components, that reliable precessional reversal in lithographically structured micrometre-sized elliptical permalloy elements is possible at switching times of about 200 ps, which is ten times faster than the natural damping time constant.     

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.     

脉冲磁场对高速钢刀具材料微观硬度的影响

研究脉冲磁场对W9Mo3Cr4V高速钢刀具材料微观硬度的影响规律. 利用自行构建的磁处理试验平台对高速钢试样进行定向脉冲磁化处理. 研究不同的脉冲磁场强度、磁场频率和磁化时间对高速钢材料微观硬度的影响规律,通过观察高速钢材料金相组织,分析脉冲磁场作用下高速钢材料的微观组织变化机制. 试验结果表明,在选择合适的脉冲磁化工艺参数条件下,高速钢材料的微观硬度能够明显提高. 脉冲磁场作用促使金属材料中一部分残余奥氏体转化为硬而脆的马氏体,使马氏体含量升高,材料组织变得均匀.      

Current-induced domain-wall switching in a ferromagnetic semiconductor structure

Magnetic information storage relies on external magnetic fields to encode logical bits through magnetization reversal. But because the magnetic fields needed to operate ultradense storage devices are too high to generate, magnetization reversal by electrical currents is attracting much interest as a promising alternative encoding method. Indeed, spin-polarized currents can reverse the magnetization direction of nanometre-sized metallic structures through torque; however, the high current densities of 10(7)-10(8) A cm(-2) that are at present required exceed the threshold values tolerated by the metal interconnects of integrated circuits. Encoding magnetic information in metallic systems has also been achieved by manipulating the domain walls at the boundary between regions with different magnetization directions, but the approach again requires high current densities of about 10(7) A cm(-2). Here we demonstrate that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 10(5) A cm(-2). The slow switching speed and low ferromagnetic transition temperature of our current system are impractical. But provided these problems can be addressed, magnetic reversal through electric pulses with reduced current densities could provide a route to magnetic information storage applications.     

Magnetization vector manipulation by electric fields

Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampère field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.     

垂直磁记录薄膜交换耦合作用及开关场分布的测量

采用Lakeshore7407型振动样品磁强计,以Co-Pt垂直磁记录薄膜为例,详细介绍了垂直薄膜等温剩磁(isothermalremanentmagnetization,IRM)曲线、直流退磁剩磁(directcurrentdemagnetizationremanence,DCD)曲线的测量方法和退磁因子的计算方法,并给出根据退磁场修正后的IRM和DCD曲线计算垂直磁记录薄膜曲线和开关场分布(SFD)的方法.最后详细讨论了薄膜的微观组织和易磁化轴取向分布对退磁场、交换耦合作用和SFD的影响.结果表明:退磁场的存在使得直接测量得到的晶粒间交换耦合作用偏小,开关场分布宽化;影响晶粒间交换耦合作用的内在原因是介质的微观组织和易磁化轴的取向分布.     

Magnetic vortex core reversal by excitation with short bursts of an alternating field

The vortex state, characterized by a curling magnetization, is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of micrometre size and below. The interplay between the magnetostatic and the exchange energy favours an in-plane, closed flux domain structure. This curling magnetization turns out of the plane at the centre of the vortex structure, in an area with a radius of about 10 nanometres--the vortex core. The vortex state has a specific excitation mode: the in-plane gyration of the vortex structure about its equilibrium position. The sense of gyration is determined by the vortex core polarization. Here we report on the controlled manipulation of the vortex core polarization by excitation with small bursts of an alternating magnetic field. The vortex motion was imaged by time-resolved scanning transmission X-ray microscopy. We demonstrate that the sense of gyration of the vortex structure can be reversed by applying short bursts of the sinusoidal excitation field with amplitude of about 1.5 mT. This reversal unambiguously indicates a switching of the out-of-plane core polarization. The observed switching mechanism, which can be understood in the framework of micromagnetic theory, gives insights into basic magnetization dynamics and their possible application in data storage.     

铁磁材料动态磁性的计算机辅助测量与研究

利用微机辅助测量技术来研究磁滞回线的动态磁化过程 ,分析在不同的初始磁场强度下的磁滞回线 ,并从理论上进行了深入的讨论 .     

环形头垂直记录/再生过程的计算机仿真研究

本文对环形头垂直磁记录系统的记录/再生过程进行了计算机仿真,结果表明环形头垂直记录系统在中高记录密度域内有很好的性能。文中并就媒体参数对记录/再生过程的影响进行了研究。     

复相多铁材料中电场调控自旋的翻转

电场调控的自旋翻转因在低能耗高密度的新型存储器件中有巨大的应用潜力而受到人们的广泛关注.在复相多铁材料中,利用磁电耦合效应有可能实现电场调控自旋的翻转.我们在CoPt/PMN-PT异质结中,利用电场调控矫顽力的变化,实现了电场调控自旋的翻转.在铁磁形状记忆合金Mn-Ni-Sn与0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3组成的复合材料中,通过电场调控交换偏置场的变化,无需偏置磁场就可以实现电场调控自旋的翻转.     

检测磁盘机磁头空气支承动态特性的新方法

本文叙述测定磁盘机中空气支承动态特性的一种新方法。由于组成空气支承的磁头/磁盘之间的间隙很小(0.1μm至1μm),过去所采用的测试方法或者需要贵重的设备,或者得改变磁头或磁盘的本来结构。作者所采用的方法则将磁头本身所具有的读/写线圈也用作为头/盘间隙变化的传感器,这是根据磁学的 Wallance 公式发展起来的。即磁头读出信号的幅值将被间隙的变化调制,对这种 AM 信号的解调所得的信号就代表了这种间隙的变化。本文除简要地叙述这种测量方法原理外,还介绍了实验装置及实验结果,证明了这种测试方法具有简单易行、频响特性高、精度高等明显优点。     

纳米磁性颗粒小点阵体系的动力学响应

通过数值解Landau Lifshitz Gilbert(LLG)方程,来研究一个具有垂直各向异性的N×N平方点阵结构的单畴铁磁颗粒体系的动力学响应.由于磁性颗粒间的偶极相互作用,我们发现存在三种不同的典型磁矩构形分布.这些构形由磁晶各向异性和磁偶相互作用之间的竞争所决定.磁性粒子的点阵几何构形是影响磁矩翻转的重要因素,偶极相互作用的增强,引起不同位置的颗粒磁矩发生先后顺序的翻转.当初态所有颗粒磁矩都平行于 z方向,且颗粒间的偶极相互作用不足以使磁矩发生耦合翻转,反转某个磁矩所需的最小翻转场将比反转单个(即无偶极相互作用)磁矩时所需的最小翻转场小得多.该种效应随着颗粒间距的增加,将明显地减弱,最小翻转场很快地增加且趋于反转单个磁矩时所需的最小翻转场.当所有颗粒磁矩处于各种不同初态时,弱偶极相互作用加宽了翻转场的取值范围.     

磁性波导中静磁体波传输特性的改进

分析了斜向静磁场情况下静磁正向体波在双层磁性波导中的传播特性,计算了YIG薄膜波导中静磁波传输功率与磁波薄膜磁化强度,斜向场倾角,间隔层尺寸的依赖关系。结果表明,通过改变双层波导薄膜的饱和磁化强度,间隔距离,可在较大的范围内调节静磁波的传输特性,改进静磁波的传输质量,同时,双层磁性薄膜波导中静磁波的传输特性优于单层膜情形,前者可以有效地提高静磁波的传输功率,有利于静磁波技术应用于静磁波器件和磁光波导器件。     

Magnetoresistive behavior and magnetization reversal of NiFe/Cu/CoFe/IrMn spin valve GMRs in nanoscale

The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance (SV-GMR) in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio (MR) and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.     

成份依赖的软磁材料CoFeB和CoFeSiB

采用磁控溅射技术制备了两种不同的富钴非晶磁性材料CoFeB和CoFeSiB.对它们的磁特性与成分的依赖关系以及作为磁性隧道结自由层的翻转特性进行了研究.在大块材料样品状态下(厚度约为1μm),CoFeB的矫顽力可达到2.51×10-2A/m,CoFeSiB则显示出1.25×10-2A/m的矫顽力.而对于磁性隧道结的磁电阻测量表明:CoFeB薄膜的自旋极化对钴含量非常敏感,从而导致隧道结磁电阻值也发生明显的变化.相比较而言,CoFeSiB的翻转特性由于钴含量的变化而受到很大影响,而自旋极化对钴含量的依赖不甚明显,在很高的钴含量(80%)时达到饱和.结果表明,通过适当的调整非金属元素Si和B的含量,可以很好的调整CoFeSiB的软磁性能而有望满足下一代高密度自旋电子学器件对于材料的苛刻要求.     

脉冲磁化处理对高速钢刀具性能的影响

进行了脉冲磁化处理高速钢的摩擦系数和抗冲击性能的研究。研制了双向脉冲磁化处理器。实验结果表明,脉冲磁化处理能够提高高速钢材料的抗冲击性能,并使高速学钢材料的摩擦系数大大降低,显著地提高了高速钢刀具的使用寿命。     

基于中点电流的ANPC逆变器故障诊断策略与容错控制

有源中点箝位型(ANPC)逆变器具有输出波形畸变率低、传输效率高等优点,获得了广泛的应用,但大量的开关器件降低了逆变器的可靠性.分析了三电平ANPC逆变器在不同开关器件开路故障下的电流路径,得到不同故障下输出电平及输出电压空间矢量的变化情况.结合各矢量作用下中点电流与输出电流的关系,提出了一种基于中点电流的故障诊断方法.根据ANPC逆变器电路特点,对其桥臂器件和箝位器件提出了不同的容错模式,并提出了一种具有不降额容错能力的容错电路结构.通过搭建仿真模型及实验平台对提出的故障诊断方法及容错策略进行验证,仿真和实验结果验证了该故障诊断方法及容错策略的有效性.     

微波辅助磁记录技术研究

颗粒磁矩反转场的大小和反转速度是衡量磁记录写入效率的主要指标.利用LL方程描述在微波场下颗粒磁矩的动力学行为,考虑了颗粒磁矩各向异性场之间存在一定夹角,计算了颗粒磁矩之间相互作用对反转场大小以及反转速度的影响,对于单个颗粒磁矩提出了能够有效提高磁矩反转速度,同时降低磁矩反转场的方法.     

用矢量合成法测量流动控制结晶器的磁场

由霍尔效应基本关系式,磁感应强度B可以分解为坐标轴向量Bx和By·利用这个原理和传统的磁场测试仪器CT3型特斯拉计,开发出一种新型的磁场测试方法矢量合成法·与传统的磁场测试方法相比,该法不仅能测试出磁场磁感应强度的大小,而且能同时测出其方向·测试结果表明,用该法所测得的流动控制结晶器磁场分布特性,很好地描绘了磁感应强度的实际分布情况·该法适用于测试恒稳磁场·     

非晶态合金材料磁化特性及其应用的研究

描述了非晶态合金材料的电磁感应效应并推出反映被测磁场变化的输出电压关系式．论述了非晶态合金磁芯材料的磁化特性曲线,分析了磁化曲线的非线性特征形式、非线性区间宽度、磁芯磁化工作点与传感器灵敏度、线性输出特性、稳定性之间的关系．在此基础上介绍了脉冲感应型磁场传感器的检测原理,并给出了部分实验结果。