| 硅纳米晶的制备及影响其光致发光因素研究 |
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| 引用本文： | 陈家荣,朱江,陆明.硅纳米晶的制备及影响其光致发光因素研究[J].河南师范大学学报(自然科学版),2012,40(4):58-61. |
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| 作者姓名： | 陈家荣 朱江 陆明 |
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| 作者单位： | 1. 贵州民族大学计算机与信息工程学院,贵阳,550001
2. 复旦大学光科学与工程系,上海,200433 |
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| 基金项目： | 贵州民族大学2012年科研基金 |
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| 摘 要： | 经过大量的实验得出硅纳米晶(Si-nc)的发光波长位置在750nm附近,从而验证了Si-nc的制备成功.其次,研究了在Si-nc的制备过程中制备不同的多层结构,掺杂不同的稀土元素,是否钝化等方法对材料进行处理后的Si-nc的光致发光强度,其实验结果表明多层结构对Si-nc的发光强度有一定的影响,掺杂不同的稀土元素后Si-nc的发光强度不同,且猝灭效应会降低Si-nc的发光强度,而钝化方法可提高Si-nc的发光强度.
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| 关 键 词： | Si-nc 光致发光 退火 H钝化 猝灭效应 量子限制效应 |
On Preparation of Si Nanocrystals and Factors Relating with Their Photoluminescence |
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| CHENG Jia-rong
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ZHU Jiang
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LU Ming.On Preparation of Si Nanocrystals and Factors Relating with Their Photoluminescence[J].Journal of Henan Normal University(Natural Science),2012,40(4):58-61. |
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| Authors: | CHENG Jia-rong ZHU Jiang LU Ming |
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| Abstract: | In this paper,we obtained emission wavelength of Si nanocrystals(Si-nc) location in nearby 750nm by a lot of experiments,thus we verified the Si-nc preparation success.Secondly,photoluminescence of Si-nc which were handled by preparing different multilayer structures,doping with different rare earth elements,and before and after passivation in the preparation process were investigated.The experimental results showed that multilayer structures and dopins with different rare earth elements will impact photoluminescence of Si-nc,but passivation method can enhance photoluminescence of Si-nc. |
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| Keywords: | Si-nc photoluminescence annealing hydrogen passivation quantum confinement effect |
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