碳纳米管模板对 YBO3：Eu3＋（5％）结构、形貌及光致发光的影响

在前驱体溶液中添加和不添加碳纳米管，采用简单的水热合成法并在1000℃下烧结，获得树枝状和类球状纳米结构的 YBO3：Eu3＋样品．研究表明：对于树枝状结构的样品，其红色和橙色光的强度比更高，且其CIE 坐标为（0．67，0．33），几乎与商业红色荧光粉 Y2 O2 S ：Eu3＋的色坐标相同，可见树枝状结构的红色荧光粉YBO3：Eu3＋在纳米器件和照明器件中具有潜在应用价值．该文还对样品的发光性质和机制做了解释．     

Bi~(3+)掺杂对YAG:Ce~(3+)荧光粉发光性能的影响

Bi 3+掺杂YAG:Ce3+荧光粉由溶胶凝胶法合成.结构和结晶过程分析表明,其结晶程度良好.光谱分析表明,Bi 3+的掺杂可以使Ce3+的荧光峰位红移.Ce3+的荧光强度随Bi 3+掺杂浓度的增加而增加,这是由Bi 3+与Ce3+之间的能量传递引起的.之后随着掺杂浓度的继续增加Ce3+的荧光强度减小,这是由浓度猝灭所致.     

物理气相沉积法制备TP/TFA纳米薄膜与光致发光特性探究

为了探究有机荧光材料在微纳尺寸上的荧光特性，采用低真空物理气相沉积方法制备了茶碱（TP）和2，3，5，6-四氟对苯二甲酸（TFA）有机纳米薄膜。通过对TP和TFA薄膜的荧光性质进行表征发现：与TP粉末相比薄膜的荧光发射峰由1个增加到4个，发射波长范围拓宽了100 nm，TFA的荧光发射峰之间的相对荧光强度发生了变化，与原料粉末相比在408 nm处的荧光发射峰蓝移了7 nm，362 nm处的荧光发射峰红移了3 nm。另外随着纳米薄膜厚度的逐渐增加，其荧光效率也逐渐增大。通过对TP和TFA纳米薄膜的表面形貌表征发现：随着薄膜厚度的增加，颗粒的聚集形态尺寸逐渐增大，从而验证了荧光效率随膜厚增加而逐渐提升的特性。     

Structural,morphological, and optical properties of tin(Ⅳ) oxide nanoparticles synthesized using Camellia sinensis extract: a green approach

Tin oxide (SnO2) nanoparticles were cost-effectively synthesized using nontoxic chemicals and green tea (Camellia sinensis) extract via a green synthesis method.The structural properties of the obtained nanoparticles were studied using X-ray diffraction,which indicated that the crystallite size was less than 20 nm.The particle size and morphology of the nanoparticles were analyzed using scanning electron microscopy and transmission electron microscopy.The morphological analysis revealed agglomerated spherical nanoparticles with sizes varying from 5 to 30 nm.The optical properties of the nanoparticles' band gap were characterized using diffuse reflectance spectroscopy.The band gap was found to decrease with increasing annealing temperature.The O vacancy defects were analyzed using photoluminescence spectroscopy.The increase in the crystallite size,decreasing band gap,and the increasing intensities of the UV and visible emission peaks indicated that the green-synthesized SnO2 may play future important roles in catalysis and optoelectronic devices.     

溅射与水热混合法制备ZnO纳米结构薄膜的异常光致发光特性(英文)

用一种混合方法用来制备ZnO纳米结构薄膜,首先利用射频磁控溅射法在玻璃衬底上沉积ZnO薄膜作为种子层,然后用水热方法合成ZnO纳米结构薄膜.为研究ZnO纳米结构薄膜的特性,利用X——射线衍射(XRD)及扫描电子显微镜(SEM)对薄膜的结构和形貌进行分析,并用X——光电子能谱技术(XPS)对薄膜的化学组份进行分析,最后利用光致发光方法(PL)对ZnO薄膜的发光性能进行了研究.从XRD谱图中可以看出,无论溅射的ZnO种子层还是水热合成ZnO纳米结构薄膜均为良好c轴(002)结晶状态的六角纤锌矿结构.从SEM图像看出,磁控溅射ZnO种子层为连续平整的膜状结构;而经过水热处理后则得到垂直于衬底的六角纳米棒和纳米片两种不同形貌的结构.XPS分析现示,在ZnO种子层中,锌和氧的比例基本上为1,说明磁控溅射ZnO晶体质量较好;而ZnO纳米结构薄膜中存在明显的氧空位缺陷.值得提出的是ZnO纳米薄膜光致发光谱存在异常的特性,采用波长为325 nm的He-Cd激光激发出可见光范围(500~700 nm)内的发光带,强度最强的是橙——红色的光(~600 nm),且肉眼可直接观察到.随着激发光波长在280~380 nm范围内变化,橙...     

SrWO_4-ZnO复合物的制备及光致发光与光催化性质的研究

采用溶剂热法制备纯的和复合ZnO的SrWO4,利用XRD、TG、PL、ICP和UV-Vis等手段对样品进行表征,研究ZnO含量对SrWO4-ZnO复合物的光致发光及光催化降解次甲基蓝活性的影响.结果表明:适量ZnO的复合引起SrWO4-ZnO复合物PL光谱强度降低,当ZnO复合量为7%时,复合物的PL光谱强度最低,光催化次甲基蓝溶液效率最高.表明复合物的PL光谱与其光催化活性有着一定的联系.     

Investigation of microenvironment-depended photoluminescence in Eu3+-implantation of GaN

GaN thin films grown on sapphire were implanted by Eu~3+ with three different fluences (5.0×10~14 , 2.5×10~15 and 5.0×10~15cm~-2 ). The photoluminescence (PL) spectra show that, after annealing, the samples exhibit strong emission at around 622.0 nm under 325 nm laser excitation. The intensity of this emission increases by one order of magnitude after annealing at from 600 ℃ to 900 ℃. Moreover, it increases less than 2 times when the fluence increases from 5×10~14 cm~-2 to 5×10~15 cm~-2 for the sample annealing at 900 ℃. The PL emission peaks around 622 nm of samples annealing at 900 ℃ can be well clarified by Gaussian fitting into 620.2, 622.0 and 625.0 nm, which are due to the Eu~3+ related with defects, Eu~3+ occupied at substitutional positions of Ga, and that located at interstitial sites, respectively. It shows that the different microenvironments and positions of Eu~3+ are responsible for these peaks, and especially the defects introduced by implantation play an important role in the behavior of the PL because they set up an energy transmission bridge from exotic photons to Eu~3+ .     

Syntheses,structure and photoluminescent properties of lanthanide oxalatosulfocarboxylate coordination polymers

Hydrothermal reactions of oxalic acid(H2ox) and 2-sulfobenzoic acid(H2L) with lanthanide oxide or hydroxide yielded five lanthanide oxalatosulfocarboxylates.They have a general formula [Ln2L2(ox)(H2O)6]n[Ln = La(1),Nd(2),Eu(3),Gd(4),Tb(5)].Their structures were characterized by single crystal X-ray diffraction,powder X-ray diffraction(PXRD),infrared(IR) spectroscopy,elemental analysis(EA),and thermogravimetric analysis(TGA).1-5 are isostructural coordination polymers and feature one-dimensional(1D) chains,which are extended into 3D supramolecular frameworks through inter-chain hydrogen bonds between coordinated H2O donors and oxygen acceptors from carboxylate,sulfonate and oxalate groups.In addition,the solid-state photoluminescence properties of the Nd(2),Eu(3) and Tb(5) derivatives have been measured at room temperature.The Eu and Tb-containing coordination polymers(CPs) exhibit intense red and green luminescence emissions,respectively,with lifetimes in the order of millisecond.     

多孔硅吸附荧光素钠的光致发光

在室温下，将多孔硅浸泡于不同浓度荧光素钠溶液中，取出晾干后对多孔硅光致发光谱（PL）进行了研究。结果表明，PL谱强度随荧光素钠浓度的增大而减弱，但浓度达到一定值得其强度不再减弱。     

Photoluminescence from Ge-SiO2 thin films and its mechanism

Ge-SiO₂ thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO₂ composite target. Films were annealed in N₂ ambience for 30 min at 300℃—1000℃ with an interval of 100℃. Through the X-ray diffraction, the average size of Ge nanocrystals (nc-Ge) was determined. They increased from 3.9 to 6.1 nm with increasing annealing temperature in the range of 600℃—1000℃. Under ultraviolet excitation, all samples emit a strong violet band centered at 396 nm. With the formation of nc-Ge, the samples exhibit another emission of orange band with the peak at 580 nm and its intensity increases with the increasing size of nc-Ge. The peak positions of two bands do not shift obviously. Experimental data indicate that the violet band comes from GeO defect and the orange band originates mainly from the luminescence centers at the interface between the nc-Ge and SiO₂ matrix.