Si含量和基片温度对Ti-Si-N纳米复合薄膜的影响

通过多靶磁控反应溅射方法沉积了Ti-Si-N系纳米复合薄膜。采用电子能谱仪（EDS）、X－射线衍射（SRD）、透射电子显微镜（TEM）、X－射线光电子能谱（XPS）和显微硬度仪分析Ti-Si-N系薄膜的微观结构和力学性能，以及基片温度对薄膜微结构和硬度的影响。结果表明，薄膜中的Si以非晶Si3N4形式抑制TiN晶粒的生长，使之形成纳米晶甚至非晶；薄膜硬度在a(Si)=4.14%时达到最大值（36GPa），继续增加Si的含量，薄膜硬度逐渐降低。基片温度的提高减弱了Si3N4对TiN晶粒长大的抑制作用，因而高的沉积温度使薄膜呈现出硬度峰值略低和硬度降幅减缓的特征。

Influences of Si Content and Substrate Temperature on Ti-Si-N Nanocomposite Films

Ti Si N nanocomposite films were deposited by multi target reactive magnetron sputtering. EDX, XRD, TEM, XPS and a microhardness tester were employed to characterize the microstructure and mechanical properties, as well as to investigate the influence of substrate temperature on these films. It reveals that in the form of Si 3N 4, Si exists at the boundaries of TiN grains, which strongly prevents the growth of TiN grains and causes TiN grains to form nanocrystalline or even amorphous; the hardness reaches the peak value (36 GPa) when a (Si)=4.14%. With the increase of Si content, the hardness of films decreases gradually. The enhancement of the substrate temperature weakens the restraint effect of Si on the growth of TiN grains, which shows a lower peak value and a slower decrease of hardness at the higher substrate temperature.