| 多孔硅的能带与发光机制的研究与分析 |
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| 引用本文： | 丁德宏,张宏,付世,姚朋军,范军,张宏庆,沈桂芬.多孔硅的能带与发光机制的研究与分析[J].辽宁大学学报(自然科学版),2004,31(1):20-22. |
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| 作者姓名： | 丁德宏 张宏 付世 姚朋军 范军 张宏庆 沈桂芬 |
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| 作者单位： | 辽宁大学,物理系,辽宁,沈阳,110036 |
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| 摘 要： | 在光致发光技术对多孔硅光学性质研究的基础上讨论了与多孔硅的微观结构有关的多孔硅的能带结构,用能量赝势法模拟计算出多孔硅的能带间隙.
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| 关 键 词： | 多孔硅 光致发光 量子限制模型 表面态 能量赝势法 |
| 文章编号： | 1000-5846(2004)01-0020-03 |
The Study on the Energy Band and the Luminescence Mechanism of the Porous Silicon |
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| DING De-hong .ZHANG Hong.FU Shi.YAO Peng-jun,FAN Jun,ZHANG Hong-qing,SHEN Gui-fen.The Study on the Energy Band and the Luminescence Mechanism of the Porous Silicon[J].Journal of Liaoning University(Natural Sciences Edition),2004,31(1):20-22. |
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| Authors: | DING De-hong ZHANG HongFU ShiYAO Peng-jun FAN Jun ZHANG Hong-qing SHEN Gui-fen |
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| Abstract: | Basing on the studying on the optical properties of the porous silicon by photoluminescence technology, this paper discusses the energy band of the porous silicon which is related to the microstructure of the porous silicon, puts forward the main luminescence, calculates the band gap of the porous silicon by the empirical pseudopotental method in the end. |
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| Keywords: | porous silicon photoluminescence quantum confinement effect surface state empirical pseudopotential method |
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