| 碳化硅薄膜的光学特性研究 |
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| 引用本文： | 于威,吕雪芹,宋维才,路万兵,傅广生.碳化硅薄膜的光学特性研究[J].河北大学学报(自然科学版),2007,27(1):24-27. |
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| 作者姓名： | 于威 吕雪芹 宋维才 路万兵 傅广生 |
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| 作者单位： | 1. 河北大学,物理科学与技术学院,河北,保定,071002
2. 唐山师范学院,物理系,河北,唐山,063000 |
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| 基金项目： | 河北省自然科学基金重点项目(503129) |
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| 摘 要： | 采用螺旋波等离子体增强化学气相沉积(HW-PECVD)技术制备了纳米晶碳化硅(nc-SiC)薄膜,利用傅立叶红外吸收谱(FTIR)、X射线衍射谱(XRD)、紫外-可见透射光谱(UV-Vis)和光致发光谱(PL)对薄膜的结构、光学带隙、发光特性等进行了测量和分析.结果表明,所沉积薄膜主要以Si-C键合结构存在,薄膜中包含有立方结构的3C-SiC晶粒,光学带隙2.59 eV,室温下薄膜表现出强的可见蓝色光致发光,发光峰位随氙灯激发波长的增加呈现红移现象,并将此发光归因于量子限制效应作用的结果.
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| 关 键 词： | SiC薄膜 薄膜结构 光学带隙 光致发光 |
| 文章编号： | 1000-1565(2007)01-0024-04 |
| 修稿时间： | 2006年3月10日 |
Optical Properties of Silicon Carbide Film |
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| YU Wei,L Xue-qin,SONG Wei-cai,LU Wan-bing,FU Guang-sheng.Optical Properties of Silicon Carbide Film[J].Journal of Hebei University (Natural Science Edition),2007,27(1):24-27. |
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| Authors: | YU Wei L Xue-qin SONG Wei-cai LU Wan-bing FU Guang-sheng |
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| Institution: | YU Wei,L(U) Xue-qin,SONG Wei-cai,LU Wan-bing,FU Guang-sheng |
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| Abstract: | The film of nanocrystalline silicon carbide(nc-SiC) is prepared by helicon wave plasma enhanced chemical vapor deposition(HW-PECVD) technique.Fourier transform infrared spectroscopy(FTIR),X-ray diffraction(XRD),ultraviolet-visible transmission spectroscopy(UV-Vis) and photoluminescence(PL) spectra are used to analyze the film structure,optical band gap and luminescence properties.The results indicate the bonding structure of the film is mainly in the form of Si-C bonds and cubic 3C-SiC crystals are present.From the measurement of UV-Vis spectrum the optical band gap is obtained to be 2.59 eV.At room temperature a strong blue emission is observed and a PL peak redshift is detected with the increase of excitation wavelength under a Xe lamp excitation.The luminescence mechanism is discussed based on the carrier quantum confinement in nano-sized SiC grains. |
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| Keywords: | SiC film film structure optical band gap photoluminescence |
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