InGaN多量子阱中载流子的传输和复合发光机制

利用金属有机化学气相沉积技术在蓝宝石衬底上生长了多量子阱结构的InGaN/GaN薄膜，并对其光致发光（PL）特性进行了研究。结果显示该样品的PL谱中有两个主要发光成分，这两个发光成分被认为是分别来自InGaN阱层中的两个分离的相：低In的InGaN母体和富In的量子点，并且它们的积分强度强烈地依赖测试温度和激发功率。这个行为被解释为GaN和InN之间较低的互溶隙导致了InGaN阱层的相分离，并且在这两个相之间存在着光生载流子的传输过程。

Transfer and composite photoluminescence mechanism of the carriers in InGaN multiple quantum wells

We grew InGaN/GaN multiple quantum well structure (MQWs) on a c plane sapphire substrate with metal organic chemical vapor deposition, and investigated its photoluminescence (PL) property. Results show that two main emission components exist in its PL spectrum. They are considered to be generated from two separate phases low In content InGaN matrix and high In content quasi quantum dots (QDs) in InGaN well layers. Their integral PL intensities largely depend on measurement temperature and excitation power. Lower miscibility between GaN and InN is believed to result in the phase separation of InGaN well layers. Transport process of photo generated carriers exists between the two phases.