微生物油脂花生四烯酸产生菌离子束诱变和发酵调控

某些微生物是高质量油脂的生产者.微生物油脂不仅有益健康,而且是生物柴油潜在的油脂来源.中国是个油脂资源缺乏的国家,开发微生物源油脂具有重要的意义.本文以产油微生物——高山被孢霉菌为出发菌,以单细胞油脂多不饱和脂肪酸产率为筛选目标,采用二步离子束诱变-筛选的策略,获得了高产菌株.研究了高产菌株的营养需求,创建了重复利用提油后的残体(菌粕)合成微生物油脂的技术.针对丝状真菌高密度发酵的传能和传质问题,研制了6×50和4×200m3大容量专用反应器组,单位发酵容积生物量达38.2g/L(发酵液)、油脂20.67g/L.其中具有重要生理活性的花生四烯酸产率最高达9.89g/L,平均为8.97g/L.花生四烯酸提取和精炼后的残油转化为生物柴油,主要指标达到国家生物柴油标准.     

利用离子注入技术制备新型结构SiC器件的展望

作者介绍了SiC MESFET(metal semiconductor field effect transistor,金属半导体场效应晶体管)器件的优点和离子注入技术在SiC器件制备中的发展趋势,提出一种用离子注入技术制备新型结构的SiC MESFET器件的方法,讨论了这种新型结构的优点,最后给出用离子注入技术制备SiC MESFET器件的设计过程。     

Al-N 共掺杂p 型ZnO 薄膜制备及电学性能的研究

利用射频磁控溅射技术在石英玻璃上制备了ZnO:Al薄膜,继而N离子注入实现薄膜的Al-N共掺杂,随后进行了不同温度和时间的热处理。并借助X射线衍射(XRD)、霍耳测试(Hall)、X射线光电能谱仪(XPS)等手段对ZnO薄膜的性能进行了表征。实验结果表明,Al-N共掺杂ZnO薄膜在578℃退火8 min表现出较稳定的p型导电,其载流子数高达1×1018～6×1018个·cm-3,对应的电阻率为1～9Ω·cm,迁移率为1～2 cm2·V-1·s-1。与单掺N相比,实现p型导电所需的退火温度有明显降低,这很可能与Al的掺入有关。此外,XPS测试结果证实大量的Ni取代O空位是薄膜p型导电的根本原因。     

Rare earth effects on high temperature oxidation of pure nickel at 1000 ℃

Isothermal and cyclic oxidation behaviors of pure and yttrium-implanted nickel were studied at 1000 ℃ in air.SEM and TEM were used to examine the oxide scales formed on nickel substrate.It was found that Y-implantation greatly improved the anti-oxidation ability of nickel both in isothermal and cyclic oxidizing experiments.Acoustic emission(AE)technique was used to study the size and number distribution of defects at the oxide/metal interface.Laser Raman microscopy was also used to study the stress status of oxide scales formed on nickel with and without yttrium.The main reason for the improvement in anti-oxidation and adhesion of oxide scale was that Yimplantation greatly reduced the grain size of NiO and lowered the compressive stress within the scale.In the meantime,Y-implantation inhibited ion diffusion rate in the oxide scale and reduced the size and number of interfacial defects,hence remarkably enhanced the adhesion of protective NiO oxide scale formed on nickel substrate.     

粉末溅射制备N-In共掺p型ZnO薄膜

在石英玻璃衬底上以ZnO∶ In2O3粉末为靶材,采用射频磁控溅射法制备出具有良好c轴择优取向的ZnO∶ In薄膜,继而对样品进行二次N离子注入掺杂,成功实现N-In共掺p型ZnO薄膜.借助XRD、Hall测试、XPS和透射谱测试手段研究分析了共掺ZnO薄膜的晶体结构、电学和光学性质.结果表明制备的薄膜具有较高的结晶质量和较好的电学性能,其空穴浓度、迁移率和电阻率分别达到4.04×1018 cm-3、1.35 cm2V-1s-1和1.15 Ωcm.X光电子能谱(XPS)分析显示在p型ZnO薄膜里存在N-In键和N-Zn键,表明In掺杂可以促进N在ZnO薄膜的固溶,有利于N元素在ZnO薄膜内形成受主能级.另外,制备的ZnO薄膜在可见光范围内有很高的透射率,最高可达90%.其常温下的禁带宽度为3.2 eV,相对本征ZnO的禁带宽度略有减小.     

Rare earth effects on high temperature oxidation of pure nickel at 1000 ℃

Isothermal and cyclic oxidation behaviors of pure and yttrium-implanted nickel were studied at 1000 ℃ in air.SEM and TEM were used to examine the oxide scales formed on nickel substrate.It was found that Y-implantation greatly improved the anti-oxidation ability of nickel both in isothermal and cyclic oxidizing experiments.Acoustic emission(AE)technique was used to study the size and number distribution of defects at the oxide/metal interface.Laser Raman microscopy was also used to study the stress status of oxide scales formed on nickel with and without yttrium.The main reason for the improvement in anti-oxidation and adhesion of oxide scale was that Yimplantation greatly reduced the grain size of NiO and lowered the compressive stress within the scale.In the meantime,Y-implantation inhibited ion diffusion rate in the oxide scale and reduced the size and number of interfacial defects,hence remarkably enhanced the adhesion of protective NiO oxide scale formed on nickel substrate.     

离子注镧对镍氧化膜生长及其膜内应力的影响

对纯镍及其表面离子注镧样品在900℃空气中的恒温氧化规律进行研究.用扫描电子显微镜(SEM)和透射电子显微镜(TEM)对NiO膜的微观形貌和结构进行测试.用激光拉曼(Raman)光谱仪和X射线衍射仪(XRD)对2种样品表面氧化膜的应力状态进行测量.用次级离子质谱仪(SIMS)对氧化膜内元素Ni、O和La的深度分布情况进行测量.结果表明:离子注镧显著降低了镍的恒温氧化速率,细化了表面NiO膜的晶粒尺寸;同时将氧化膜的生长由注镧前Ni2+阳离子的向外扩散转变为注镧后O2-阴离子的向内扩散为主.X射线衍射和激光拉曼光谱测量均反映出注镧引起的膜内应力降低效应,并且结合氧化膜内应力深度分布的不均匀性及膜生长过程中存在的稀土元素效应,对2种应力测量结果之间存在的偏差进行了细致分析.     

后注Ar^＋对高能注P^＋硅中二次缺陷的影响

用剖面的电子显微术(XTEM)研究了后注Ar~+对高能注P~+硅中二次缺陷的影响。结果表明,后注Ar~+像后注Si~+一样能够减少高能注P~+硅中的二次缺陷。但这种效果与退火过程密切相关,退火应该在后注Ar~+之后,而不是在其之前。实验还发现,在适当退火条件下,后注Ar~+产生的新二次缺陷比后注Si~+产生的要少一些。物理机制分析认为,后注Ar~+减少二次缺陷的物理机制与后注Si~+的是相似的。