Al-Cu二元系在540℃时的扩散行为研究

【目的】研究Al-Cu二元系在540℃的扩散行为,为Al-Cu双金属复合结构实用化提供参考依据。【方法】利用电子探针显微分析仪(EPMA)对不同退火温度下二元扩散偶的形貌和成分进行分析研究。【结果】将Al-Cu二元扩散偶在540℃的真空退火炉中分别退火36 h、48 h和60 h后,在扩散区可以观察到4种金属间化合物(IMCs)θ(Al_2Cu)、η_2(Al_(0.939)Cu_(0.987))、ζ_2(Al_9Cu_(11.5))和γ_1(Al_4Cu_9)。中间化合物扩散层的厚度与时间的平方根呈现线性关系,符合抛物线生长规律。同时,为了进一步研究Al-Cu之间的扩散行为,对互扩散系数进行计算,并对该方法做详细的介绍。【结论】随着温度的升高,金属间化合物的生长常数和互扩散系数也随之增加,其中Al_4Cu_9的生长常数和扩散系数在4个IMCs最大。金属间化合物的生长主要受到体扩散的控制。     

Cr,Mo对Cu/Si(100)薄膜体系结构、电阻率及扩散性能的影响

利用简易合金靶材在Si(100)基底单靶磁控溅射制备Cu(Cr)、Gu(Mo)薄膜.研究薄膜在300~500℃退火前后的结构、电学及扩散性能的变化.结果表明,Cr、Mo的加入增强了Cu薄膜的(111)织构,且溅射态薄膜电阻率显著增加.真空退火后,Cu(200)和Cu(220)衍射峰增强,但薄膜保持较强的(111)织构.Cu(1.19%Cr)薄膜电阻率随温度升高先减小后增加,400℃退火后电阻率最小,为2.76μΩ.cm,接近纯Cu薄膜(2.55μΩ.cm);而Cu(1.28%Mo)薄膜的电阻率一直呈下降趋势.Cu(1.28%Mo)薄膜在400℃退火30 min后,薄膜与Si基底间的互扩散深度约60 nm,与纯Cu薄膜(约70 nm)相似.而Cu(1.19%Cr)薄膜的互扩散深度较小为30 nm.Cr显著减小了Cu、Si之间的互扩散.这与Cr在薄膜/基体界面处的偏聚有关.     

Elements inter-diffusion in the turning of wear-resistance aluminum bronze

Inter-diffusion of elements between the tool and the workpiece during the turning of aluminum bronze using high-speed steel and cemented carbide tools have been studied. The tool wear samples were prepared by using M2 high-speed steel and YW1 cemented carbide tools to turn a novel high strength, wear-resistance aluminum bronze without coolant and lubricant. Adhesion of workpiece materials was found on all tools' surface. The diffusion couples made of tool materials and aluminum bronze were prepared to simulate the inter-diffusion during the machining. The results obtained from tool wear samples were compared with those obtained from diffusion couples. Strong inter-diffusion between the tool materials and the aluminum bronze was observed in all samples. It is concluded that diffusion plays a significant role in the tool wear mechanism.     

络合剂存在下UO_2~(2 )和~ 离子交换动力学的研究

采用浅床法测定了在络合酸的存在下 UO2 2 和H 离子在树脂相的互扩散系数 D .考察了洗脱液的 p H值、二元络合酸的种类和碳链的长度对 D的影响 .结果表明 ,络合酸的存在可显著提高 D值 ,其中溴代丁二酸的存在可使 D值增大 3.5倍     

GaAs上Ge薄膜的性能研究

用超高真空镀膜机在半绝缘GaAs衬底上蒸镀800nmGe,Ge薄膜在500度以上退火有再结晶过程，退火后由非晶变成多晶，在Ge和GaAs界面处有互扩散，电特性研究表明退火后Ge薄膜呈高浓度p型，可能是由于Ga扩散到Ge中的掺杂或是Ge的缺陷行为所致。