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ThebandgapofSi-baseSi1-xGexalloycanchangealongwithcontentxandstrain ,thepeakwavelengthofphotodetectorsfabricatedbyusingthismaterialscanbemodulatedaccord inglyfrom 0 .8μmto 1 .6 μm .Si-baseSiGeinfrareddetectorsarecompatiblewiththeSiverylarge -scaleintegrated (VLS… 相似文献
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