ZnS:Mn纳米晶的微结构和发光性能

以Na2S·9H2O为硫源,柠檬酸为稳定剂,采用溶剂热法制备了ZnS:Mn纳米晶.通过X射线衍射谱.拉曼光谱和光致发光谱分别研究了ZnS:Mn纳米晶的微结构和发光性能.结果表明:所制备的ZnS:Mn纳米晶均具有立方结构,颗粒尺寸约为2～4nm.掺杂Mn2+替代Zn2+处在置换状态.光致发光谱测试表明纯ZnS纳米晶仅存在516cm-1的弱发射峰.随着Mn2+含量增加,在603cm-1处出现了一个强的Mn2+发光特征峰,该发射峰归因于4T1→6A1的锰离子跃迁.随着掺杂锰量的增加,该发射峰强度呈现非单调的变化,当Mn离子掺杂量为10%时,发射峰强度达到最大值.     

Mn掺杂纳米晶ZnO的制备及其性质

 采用固相热分解自组装方法制备Mn掺杂纳米晶ZnO样品, 并利用X射线衍射(XRD)、 能量散射光谱(EDS)、 X射线光电子能谱(XPS)和光致发光光谱(PL)等方法测试Mn掺杂ZnO样品的结构、 形态及光学性质. 结果表明: 采用本文方法获得了具有ZnMn低O/ZnMn高O核壳结构的ZnMnO合金; 在250 ℃和300 ℃制备样品时, 表面存在大量的Mn对表面起钝化作用.     

Eu3+掺杂TiO2纳米晶的制备及光学性质研究

采用溶胶-凝胶的方法,通过烷基钛的水解、煅烧,制备了掺杂Eu3 的TiO2纳米晶发光材料.结果表明,稀土掺杂的TiO2纳米晶不仅没有改变在不同温度下TiO2的晶型,而且Eu3 离子发光与TiO2的晶型有密切关系,即Eu3 掺杂在具有锐钛矿晶型的TiO2,在波长为396、464和532 nm光的激发下该材料才能发射单色性较强的红色荧光,并讨论了不同烧结温度对材料发光性能的影响.     

Eu^3＋掺杂二氧化钛纳米粉末的制备及发光性质研究

以钛酸四丁酯为前驱物,利用溶胶一凝胶法制备了Eu3+掺杂TiO2纳米粉末.首先对纳米粉末的发光性质进行了一定的研究,找出了纳米晶发光效率最佳激发波长,然后用最佳激发波长对不同退火温度下摩尔分数为0.5%Eu3+离子掺杂TiO2纳米晶和同一退火温度下不同摩尔分数Eu3+离子掺杂的纳米晶进行激发,对发射光谱进行分析,从而得到制备纳米晶的最佳退火温度和最佳Eu3+离子掺杂的摩尔分数.     

Mn掺杂ZnSe量子点的无膦合成及稳定性研究

以十八烯溶解硒粉为硒源,系统研究了十一烯酸锌、十四酸锌和硬脂酸锌为锌前驱体对Mn掺杂ZnSe量子点光学性质的影响,初步探讨了三种锌前驱体的由于碳链长度不同、反应活性差异导致Mn离子在量子点晶格中掺杂位置变化,以及Mn离子掺杂位置对量子点光学性质和稳定性的影响。通过改变油胺的添加量,调控晶面的表面势能,研究了其对Mn掺杂ZnSe量子点粒子形貌及光学性质的影响。     

Phosphine-free synthesis of Mn-doped ZnSe quantum dots and investigates of stability

以十八烯溶解硒粉为硒源,系统研究了十一烯酸锌、十四酸锌和硬脂酸锌为锌前驱体对Mn掺杂ZnSe量子点光学性质的影响,初步探讨了三种锌前驱体的由于碳链长度不同、反应活性差异导致Mn离子在量子点晶格中掺杂位置变化,以及Mn离子掺杂位置对量子点光学性质和稳定性的影响。通过改变油胺的添加量,调控晶面的表面势能,研究了其对Mn掺杂ZnSe量子点粒子形貌及光学性质的影响。     

掺杂效应对氧化锡纳米晶微结构、形貌及其光学性能的影响

以二价SnCl2无机盐为原料，基于配合物前躯体方法制备了氧化锡及铜离子掺杂氧化锡纳米晶．根据DSC和TG分析结果在550℃对前驱体进行煅烧．运用FTIR、UV-VIS、XRD和TEM／HRTEM等测试手段对两纳米晶材料进行了分析表征．掺杂后掺杂相氧化物分散驻留在SnO2晶粒表面，阻止了SnO2晶粒表面的扩散，从而抑制其晶粒生长．此外，铜离子掺杂使得表面缺陷附近的自由电子能有效的定域化，从而使SnO2纳米晶体系的直接和间接带隙能均向高能方向移动．试验证明以无机盐代替金属醇盐为原料是切实可行的，且配合物前躯体法简单易操作，将有利于产业化．     

ZnS:Mn纳米晶的微结构和发光性能

以Na2S·9H2O为硫源,柠檬酸为稳定剂,采用溶剂热法制备了ZnS:Mn纳米晶.通过X射线衍射谱.拉曼光谱和光致发光谱分别研究了ZnS:Mn纳米晶的微结构和发光性能.结果表明:所制备的ZnS:Mn纳米晶均具有立方结构,颗粒尺寸约为2～4nm.掺杂Mn2+替代Zn2+处在置换状态.光致发光谱测试表明纯ZnS纳米晶仅存在...     

NaYF_4:Eu纳米晶的制备和表征

研究了用高温热解的方法可控合成稀土纳米晶.并通过调节不同的温度来制备不同形貌和不同晶形的纳米材料,成功合成了单分散的α-NaYF4:Eu和β-NaYF4:Eu的纳米晶.通过分析纳米晶表面的有机配体,得出纳米晶表面主要是油酸配体的结论.为将来这一材料在生物和其他方面的应用提供了参考.并且研究了Eu3+掺杂纳米晶的发光性质对晶相和表面的依赖性,结果显示α-NaYF4:Eu的I610/I590的比值大于1,而β-NaYF4:Eu的比值小于1.     

天然锗纳米晶的制备与中子嬗变掺杂研究

采用离子注入法及退火工艺,在硅基二氧化硅薄膜中制备了镶嵌结构的天然Ge纳米晶样品. 通过退火实验研究,发现随着退火温度的升高,纳米晶的晶态峰峰位红移,这意味着Ge纳米晶受到的应力减小. 当退火温度达到 700 ℃时,纳米晶的晶态峰强度显著增强,而且薄膜中与Ge有关的缺陷发光减弱. 采用中子嬗变掺杂法对天然Ge纳米晶进行了掺杂,X射线荧光光谱数据表明,样品中成功的引入了Ga杂质和As杂质. 薄膜中形成的与Ge有关的缺陷具有稳定的结构,中子辐照之后其发光仍然存在,而且,掺杂后的样品中没有发现与Ga或As有关的     

水热法制备ZnS:Mn纳米晶体及其发光特性

研究了水热法(200°C)制备的不同浓度Mn掺杂ZnS纳米晶体发光特性。所合成样品为10～16 nm的立方相纤锌矿结构,随着Mn掺杂浓度的增加,PL光谱峰值产生了红移。在摩尔比为10 ％ Mn掺杂时PL发光最强。讨论了样品的发光机理,计算了晶体场强度,同时观察到摩尔比为10 ％ Mn掺杂样品发出白光,说明其在白光LED及全色荧光粉中具有潜在的应用价值。     

Luminescent Cu doped CdTe nanocrystals via cation exchange of Cu7Te5 nanocubes: From undoped to doped emission

In II-VI group, the doping in CdTe nanocrystals (NCs) is more difficult than other chalcogenides. In this communication, CdTe nanocrystals containing Cu impurities were carefully synthesized based on controlled reverse cation exchange process between as-prepared Cu₇Te₅ nanocubes and Cd²⁺ ions. By well-defined Cu₇Te₅ nanocubes, the obtained CdTe NCs kept the original morphology. The concentration of Cu impurities in CdTe NCs was controlled by the regulation such reverse cation exchange. Additionally, the regulation from band gap (BG) photoluminescence (PL) to the coexistence of the bandgap emission, dopant emission, and surface-state emission was realized. This tailoring from undoped to doped emission in the case of Cu impurities is helpful to study the Cu related doping in telluride NCs.     

Energy transfer process between Eu3+ and wide-band-gap SnO2 nanocrystals in silica films studied by photoluminescence excitation and time-resolved photoluminescence techniques

Eu3+ions embedded in silica thin films codoped with SnO2 nanocrystals were fabricated by sol–gel and spin-coating methods.SnO2 nanocrystals with controllable sizes were synthesized through precisely controlling the Sn concentrations.The influences of doping and annealing conditions on the photoluminescence intensity from SnO2 nanocrystals are systematically investigated.The effective energy transfer from the defect states of SnO2nanocrystals to nearby Eu3+ions has revealed by the selective photoluminescence excitation spectra.The efficiency of the Forster resonance energy transfer is evaluated by the time-resolved photoluminescence measurements,which is about 29.1%based on the lifetime tests of the SnO2emission.     

Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutro transmutation doping

Nanocrystalline74Ge embedded SiO2 films were prepared by employing ion implantation and neutron transmutation doping methods.Transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence of the obtained samples were measured. The existence of As dopants transmuted from74 Ge is significant to guarantee the uniformity and higher volume density of Ge nanocrystals by tuning the system’s crystallinity and activating mass transfer process. It was observed that the photoluminescence intensity of Ge nanocrystals increased first then decreased with the increase of arsenic concentration. The optimized fluence of neutron transmutation doping was found to be5.5 1017 cm 2to achieve maximum photoluminescence emission in Ge embedded SiO2 film. This work opens a route in the three-dimensional nanofabrication of uniform Ge nanocrystals.     

n-type colloidal semiconductor nanocrystals

Colloidal semiconductor nanocrystals combine the physical and chemical properties of molecules with the optoelectronic properties of semiconductors. Their colour is highly controllable, a direct consequence of quantum confinement on the electronic states. Such nanocrystals are a form of 'artificial atoms' (ref. 4) that may find applications in optoelectronic systems such as light-emitting diodes and photovoltaic cells, or as components of future nanoelectronic devices. The ability to control the electron occupation (especially in n-type or p-type nanocrystals) is important for tailoring the electrical and optical properties, and should lead to a wider range of practical devices. But conventional doping by introducing impurity atoms has been unsuccessful so far: impurities tend to be expelled from the small crystalline cores (as observed for magnetic impurities), and thermal ionization of the impurities (which provides free carriers) is hindered by strong confinement. Here we report the fabrication of n-type nanocrystals using an electron transfer approach commonly employed in the field of conducting organic polymers. We find that semiconductor nanocrystals prepared as colloids can be made n-type, with electrons in quantum confined states.     

Al3+掺杂NaGdF4:Er3+/Yb3+纳米晶上转换发光性能的研究

稀土离子掺杂的上转换纳米材料具有优异的光学性能,在光电等领域具有广阔的应用前景。本文采用溶剂热法,以乙二胺四乙酸(EDTA)为络合剂合成了的粗细均匀的六棱柱形的六方相Al3+掺杂NaGdF4:Er3+/Yb3+纳米棒。X射线研究表明适量的Al3+掺杂对NaGdF4的晶相没有产生影响,但使主衍射峰的位置发生偏移。在980nm激光激发下,与未掺杂的纳米晶相比,在Al3+的掺杂浓度为15%时,红绿光发光最大强度分别增强了5.7倍和5倍,且4F9 /2能级的荧光寿命被延长。Al3+掺杂对上转换发光的改善是因Er3+附近局部对称性的降低和粒子表面吸附基团的减少所致。     

非水相合成在非氧化物半导体纳米晶材料制备中的应用进展

半导体纳米晶材料由于具有表面效应、量子尺寸效应、介电限域效应、特殊的热学性质、光学性质及光电化学性质等而成为材料科学和化学领域的研究热点.在研究它们独特性质的时候,制备出各种高质量的纳米晶材料就成为必备条件之一.非水相合成相对于已报道的其它方法而言,具有很多优点,如:单分散性好,粒径容易控制、产物的结晶度高等,而越来越被研究者关注.本文对近几年关于半导体纳米晶材料的非水相合成方法进行了综述.     

螯合剂辅助水热合成DyF3纳米晶

采用螯合剂辅助水热法,在较低的温度下合成了DyF3纳米晶。通过调节反应条件,实现了对产物形貌的控制合成。用X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)等对样品的形貌和晶体结构进行表征。结果表明:当反应温度为180℃,反应时间为48h,反应溶液pH=3,添加EDTA螯合剂的浓度为1.67μmol/L的条件下,能够制备出晶体形貌均一的截角八面体DyF3纳米晶体。     

Three-dimensional binary superlattices of magnetic nanocrystals and semiconductor quantum dots

Recent advances in strategies for synthesizing nanoparticles--such as semiconductor quantum dots, magnets and noble-metal clusters--have enabled the precise control of composition, size, shape, crystal structure, and surface chemistry. The distinct properties of the resulting nanometre-scale building blocks can be harnessed in assemblies with new collective properties, which can be further engineered by controlling interparticle spacing and by material processing. Our study is motivated by the emerging concept of metamaterials-materials with properties arising from the controlled interaction of the different nanocrystals in an assembly. Previous multi-component nanocrystal assemblies have usually resulted in amorphous or short-range-ordered materials because of non-directional forces or insufficient mobility during assembly. Here we report the self-assembly of PbSe semiconductor quantum dots and Fe2O3 magnetic nanocrystals into precisely ordered three-dimensional superlattices. The use of specific size ratios directs the assembly of the magnetic and semiconducting nanoparticles into AB13 or AB2 superlattices with potentially tunable optical and magnetic properties. This synthesis concept could ultimately enable the fine-tuning of material responses to magnetic, electrical, optical and mechanical stimuli.