CdTe包覆TiO2纳米棒壳核结构有序阵列与P3HT杂化太阳电池研究

采用水热法在含氟二氧化锡导电玻璃(FTO)上制备了有序的金红石型TiO2纳米棒阵列,在TiO2纳米棒阵列上电沉积CdTe纳米晶构成了CdTe包覆TiO2壳核式纳米棒阵列(CdTe/TiO2),然后将聚3-己基噻吩(P3HT)的氯苯溶液旋涂到CdTe/TiO2壳核式纳米棒阵列上构成P3HT包覆CdTe/TiO2壳核式纳米棒阵列的复合结构(P3HT/CdTe/TiO2),在P3HT/CdTe/TiO2壳核式纳米棒阵列复合结构上使用离子溅射法喷镀Au膜构制Au-P3HT/CdTe/TiO2结构的杂化太阳电池,实验测得以Au-P3HT/CdTe/TiO2结构组装的杂化太阳电池的能量转换效率为0.91%。     

Sb2S3:P3HT共混物改善TiO2纳米棒阵列钙钛矿太阳电池的性能

为解决钙钛矿太阳电池中MAPbI₃的不稳定性问题,提高电池性能,对以TiO₂纳米棒阵列作为电子传输层、Sb₂S₃:P3HT共混物作为钙钛矿MAPbI₃修饰层的太阳电池进行了研究。首先,以SbCl₃作为锑源,Na₂S₂O₃作为硫源,采用溶剂热法制备合适尺寸的Sb₂S₃纳米球;其次,通过超声分散法将Sb₂S₃与P3HT在氯苯溶液中共混得到Sb₂S₃:P3HT共混物,将其旋涂于沉积了MAPbI₃薄膜的TiO₂纳米棒阵列上,形成FTO/TiO₂NR/MAPbI₃/Sb₂S₃:P3HT复合膜,制备成TiO₂纳米棒阵列MAPbI₃/Sb₂S₃:P3HT太阳电池;最后,采用SEM,XRD,J-V曲线和紫外可见吸收光谱等方法进行表征和测试。结果表明,制备的结构为FTO/TiO₂NR/MAPbI₃/Sb₂S₃:P3HT/Spiro-OMeTAD/Ag的太阳电池,能量转换效率（PCE）最高达到了14.73％,与未采用Sb₂S₃:[JP]P3HT共混物修饰的TiO₂纳米棒阵列MAPbI₃太阳电池相比,能量转换效率得到了明显提升。因此,Sb₂S₃:P3HT共混物能避免出现钙钛矿MAPbI₃被氧化的不稳定性问题,可有效提高TiO₂纳米棒阵列MAPbI₃太阳电池的性能。     

聚3-己基噻吩/ZnO微纳米球复合膜的形貌和光学性能

对ZnO微纳米球从分散性和能级匹配方面进行了受体可行性研究,分析了能级结构和光电性能之间的关系;并将聚-3己基噻吩(P3HT)与ZnO微纳米球共混和旋涂制备P3HT/ZnO复合膜,考察P3HT和ZnO的共混质量比和退火温度对复合膜微观形貌及光学性能的影响。结果说明,P3HT/ZnO微纳米球复合膜与纯ZnO薄膜相比,拓宽了紫外吸收范围,增强了对太阳光的吸收,说明复合膜的吸收光谱与太阳光谱能够较好的匹配;在120℃退火处理后增强了P3HT的有序性,改善了复合膜的结晶性,有利于电池效率的提高。当P3HT质量浓度为6mg/mL、旋涂转速为1 500r/min时,优质复合膜的制备参数为:P3HT和ZnO微纳米球共混质量比为1∶2,退火温度120℃。优质复合膜大大拓宽了紫外吸收范围,增强了对太阳光的吸收。     

基于TiO_2/Perovskite/P3HT结构的n-i-p型钙钛矿电池的电极界面优化与器件性能

以TiO_2/钙钛矿(PVSK)/P3HT的n-i-p型钙钛矿电池作为研究对象,研究了TiO_2薄膜退火温度对TiO_2薄膜的结晶性、基于此的钙钛矿薄膜的形貌以及光伏器件性能的影响,比较了P3HT的掺杂以及不同批次P3HT材料对钙钛矿太阳能电池器件性能的影响。结果表明:TiO_2薄膜的退火工艺及P3HT的批次对器件性能影响较大。TiO_2薄膜的制备工艺设为退火温度为300℃,退火时间为45min,提高TiO_2的退火温度到500℃,钙钛矿太阳能电池的效率可提高到11.27%.通过优化钙钛矿薄膜厚度为190nm,制备得到光电转换效率为6.77%的钙钛矿薄膜光伏电池。基于低温TiO_2为电子传输层、掺杂P3HT为空穴传输层的器件性能为开路电压VOC=0.98V,短路电流J_(SC)=19.94mA/cm~2,填充因子f_F=0.42,转换效率η(PCE)=8.18%.TiO_2电子传输层和P3HT空穴传输层的系统优化对制备高性能n-i-p结构钙钛矿电池具有重要意义。     

Zn/ZnO纳米线电极的制备及其在柔性杂化太阳电池中的应用

低温下,采用水热法,在金属Zn片上制备了Zn/ZnO纳米线电极。扫描电镜(SEM)、透射电镜(TEM)分析结果表明,该ZnO为垂直于基底生长的纳米线结构,并由X射线衍射(XRD)分析得到进一步确认;在该Zn/ZnO电极上旋涂聚3-已基噻吩(P3HT)得到Zn/ZnO/P3HT杂化电极,紫外可见吸收光谱(UV-vis)表明P3HT的存在拓宽了电极的光响应范围;对Zn/P3HT和Zn/ZnO/P3HT电极进行荧光光谱(PL)测试,发现ZnO/P3HT杂化膜的荧光发射强度降低,说明光生激子在复合前即在ZnO/P3HT异质结界面处发生分离。在此基础上,制作了结构为Zn/ZnO/P3HT/PEDOT:PSS/ITO的柔性杂化太阳电池,于模拟太阳光(100mW/cm2)照射下测试该电池的光电性能:电池的开路电压Voc为334mV,短路电流密度Jsc为1.72mA/cm2,填充因子FF为0.39,光电转换效率η为0.22%。     

水热法制备TiO2-ZnO纳米棒分级结构及其光电性能研究

为了增加光电极光生电子传输通道并提高其光敏剂的负载能力,采用两步水热法制备了一种新颖的TiO_2-ZnO纳米棒分级结构。采用水热法在FTO导电玻璃基底上生长TiO_2纳米棒有序阵列膜,通过浸泡提拉在TiO_2纳米棒上包覆一层ZnO溶胶,经烧结形成ZnO种子层;再次采用水热法于TiO_2纳米棒上生长ZnO纳米棒,形成TiO_2-ZnO纳米棒分级结构,通过旋涂辅助连续离子反应分别在TiO_2纳米棒阵列和TiO_2-ZnO纳米棒分级结构中沉积光敏剂CdS纳米晶,形成CdS/TiO_2纳米棒复合膜和CdS/TiO_2-ZnO纳米分级结构复合膜。利用SEM,TEM,XRD、紫外-可见吸收光谱、瞬态光电流图谱等表征和测试手段,对样品的形貌、结构、光吸收和光电性能进行了表征和测试。结果表明,与单纯的TiO_2纳米棒阵列相比,TiO_2-ZnO分级结构可以沉积更多的CdS光敏剂,CdS/TiO_2-ZnO纳米分级结构复合膜的光吸收性能和瞬态光电流均明显优于CdS/TiO_2纳米复合薄膜。凭借优异的光电性能,TiO_2-ZnO分级结构在太阳电池光阳极材料中具有很好的应用前景。     

纳米TiO_2，ZnO，SiO_2改性内墙涂料性能

将纳米TiO_2,ZnO,SiO_2,TiO_2/ZnO,TiO_2/SiO_2,TiO_2/ZnO/SiO_2按一定的质量配比添加到涂料中充分搅拌,制备纳米复合涂料,测定其粘度、甲醛质量分数、抗菌性能、重金属质量分数等,通过透射电子显微镜观察微观形态,分析纳米粒子在涂料中的分散性.结果表明,加入纳米TiO_2/ZnO和纳米TiO_2/SiO_2,比加入单一纳米粒子具有更优越的性能.     

TiO2/P3HT复合太阳能电池的制备和性能研究

用简单易行的一步水热法在透明导电玻璃FTO上制备了直径、密度及取向可控的TiO2纳米阵列,FTO同时作为底电极,用旋涂法将有机P型聚合物P3HT复合到阵列表面,磁控溅射制备Pt电极,组装TiO2/P3HT有机无机复合太阳能电池.通过XRD、SEM、紫外-可见光谱仪、I-V/J-V特性曲线等表征TiO2阵列薄膜及器件的结构、形貌和光电特性.研究制备TiO2纳米阵列的水热时间及无水乙醇的量对薄膜质量及复合太阳能电池光电性能的影响.通过优化各项参数,FTO/TiO2/P3HT/Pt简单双层结构的光器件在AM1.5,光强100mW/cm2下开,路电压Voc达到0.50V,光电转换效率IPCE达到0.11%.     

活性层薄膜结构对有机光伏器件性能的影响

用P3HT作为电子给体,PCBM作为电子受体,制备了分层(单异质结)和共混(体异质结)2种不同结构的太阳电池,对其光电特性进行了表征,分析比较了不同结构对器件性能影响的物理机制.结果表明:所制备器件的开路电压分别为0.521 V和0.581 V,能量转换效率分别为0.67%、1.98%,体异质结结构可有效地改善太阳电池的输出特性.     

介孔纳米TiO2/P3HT复合材料的制备及其光催化性能研究

采用水热合成法制备出介孔纳米TiO2;将制备的TiO2与聚3-己基噻吩(P3HT)通过共混法制备TiO2/P3HT复合微粒;分别以酸性橙II和亚甲蓝为模型有机污染物,考察TiO2以及TiO2/P3HT纳米复合材料在可见光、紫外光和阳光下的光催化活性和光催化稳定性.实验结果表明：P3HT对于介孔纳米TiO2的掺杂能显著改善介孔TiO2的光催化性能.掺杂前,介孔TiO2 在30 min时对于酸性橙II和亚甲蓝的可见光降解率分别为31.26%和47.38%,紫外光降解率分别为39.47%和60.38%,阳光下的降解率分别为64.37%和76.09%;掺杂后,介孔TiO2/P3HT复合材料30 min时对于酸性橙II和亚甲蓝在可见光下的降解率分别为60.09%和71.45%,紫外光下的降解率分别为82.14%和88.61%,阳光下的降解96.62%和99.50%.     

Flexible dye-sensitized solar cell based on PCBM/P3HT heterojunction

Using blend heterojunction consisting of C60 derivatives [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT) as charge carrier transferring medium to replace I3–/I– redox electrolyte,a novel flexible dye-sensitized solar cell (DSSC) is fabricated.The characterization of infrared spectra and ultraviolet-visible spectra shows that the PCBM/P3HT heterojunction has not only the absorption in ultraviolet light for PCBM,but also the absorption in visible and near infrared light for P3HT,which widens the photoelectric response range for DSSC.The influence of PCBM/P3HT mass ratio on the performance of the solar cell is discussed.Under 100 mW cm–2 (AM 1.5) simulated solar irradiation,the flexible solar cell achieves a lightto-electric energy conversion efficiency of 1.43%,open circuit voltage of 0.87 V,short circuit current density of 3.0 mA cm–2 and fill factor of 0.54.     

Luminescent and photovoltaic properties of poly（9,9-dioctylfluorene- co-bithiophene） in organic electronic devices

We studied the luminescent and photovoltaic properties of poly(9,9-dioctylfluorene-co-bithiophene)(F8T2) based on ITO/PEDOT:PSS/F8T2/Bphen/LiF(0 or 1 nm)/Al and ITO/PEDOT:PSS/F8T2:PCBM/Bphen/Al.A stable and bright yellow emission was obtained from polymer F8T2,and the electroluminescence power reached 45 ?W at a 15 V driving voltage.Polymer F8T2 shows a broad absorption band from 400 to 500 nm,and has a shorter absorption edge at about 560 nm compared to that of the typical electron donor P3HT(650 nm).The photoluminescence quenching of F8T2 occurs with only a small fraction of blended PCBM due to the effective exciton dissociation at the interface between F8T2 and PCBM.Polymer solar cells(PSCs) using F8T2:PCBM as the active layer show a low power conversion efficiency(PCE) of 0.10% with an open circuit voltage(Voc) of 0.91 V and short circuit current density(Jsc) of 0.23 mA/cm2.The PSCs using F8T2:P3HT:PCBM as the active layer have a Voc of 0.85 V and Jsc of 3.02 mA/cm2,improving the PCE by about 0.90%.We attribute the improved cell performance to the higher number of photons harvested by P3HT molecules.     

Comparison between P25 and anatase-based TiO<Subscript>2</Subscript> quasi-solid state dye sensitized solar cells

Pure anatase TiO2 films have been made via hydration of titanium isopropoxide using a sol-gel tech-nique, while mixed TiO2 films which contained both anatase and rutile TiO2 were made from commercial P25 powder. Quasi-solid state dye-sensitized solar cells were fabricated with these two kinds of mesoporous films and a comparison study was carried out. The result showed that the open-circuit photovoltages （Voc） for both kinds of cells were essentially the same, whereas the short-circuit photo-currents （1sc） of the anatase-based cells were about 33% higher than that of the P25-based cells. The highest photocurrent intensity of the anatase-based cell was 6.12 mA/cm^2 and that of the P25-based cell was 4.60 mA/cm^2. Under an illumination with the light intensity of 30 mW/cm^2, the corresponding energy conversion efficiency was measured to be 7.07% and 6.89% for anatase-based cells and P25-based cells, respectively.     

Hybrid solar cells based on poly（3-hexylthiophene） and electrospun TiO2 nanofibers modified with CdS nanoparticles

Organic–inorganic hybrid solar cells based on poly(3-hexylthiophene) and electrospun TiO2 nano bers were fabricated by solution process.The ef ciency of the device was improved by modifying CdS nanoparticles on the surface of TiO2 by electrochemical method.The CdS layer can lead to the increase of both open circuit voltage and short circuit current of the device,which are attributed to enhanced exciton dissociation and light absorption and suppressed carrier recombination by CdS at the heterojunction.However,too thick CdS layer led to increased series resistance and decreased ef ciency of the device.Therefore,the optimum condition of the CdS deposition was obtained,which increased the power conversion ef ciency of the device for about 50%.Our results indicate that the surface modi cation on the inorganic semiconductor layer is an effect way to improve the performance of the hybrid solar cells.     

Influence of nanostructure on the device performance and charge recombination dynamics of P3HT:PCBM solar cells

In this paper,we investigated the recombination dynamics of photogenerated charge carriers in a poly(3-hexylthiophene)(P3HT):[6,6]-phenyl-C 61-butyric acid methyl ester(PC 61 BM) blend system with donor-acceptor ratio of 1:1 before and after solvent annealing treatment.The technique of transient photocurrent and photovoltage measurements were used,and charge carriers were photogenerated by a 7 ns laser pulse at room temperature(298 K).In transient photocurrent measurement,we observed some differences in the saturation extracted charge in P3HT:PCBM solar cells with different power efficiencies.In addition,the bimolecular recombination coefficient is found to be 3.5×10-13 cm 3 s-1 for annealed devices,while 9.5×10-12 cm3 s-1 for as-cast devices.In the transient photovoltage measurement,we found that the photovoltage decay can be fitted by power-law equation at long time scale.The exponent parameter is 2.6 for annealed devices,which can be described as trap-free bimolecular recombination;is 1.76 for as-cast device due to the trap-limited bimolecular recombination.These experimental results indicate that the nanomorphology of active layer indeed have influence on charge carriers dynamics in P3HT:PCBM blend systems.     

Preparation and luminescence characteristics of Sr3SiO5：Eu^2＋ phosphor for white LED

The Sr3SiO5：Eu^2＋ phosphor was synthesized by high temperature solid-state reaction. The emission spectrum of Sr3SiO5：Eu^2＋ shows two bands centered at 487 and 575 nm, which well agree with the theoretic values of emission spectrum. The excitation spectrum for 575 nm emission center has several excitation bands at 365, 418, 458 and 473 nm. And the results show that the emission spectrum of Sr3SiO5：Eu^2＋ is influenced by the Eu^2＋ concentration. The relative emission spectra of the white-emitting InGaN-based YAG：Ce^3＋ LED and Sr3SiO5：Eu^2＋ LED were investigated. The results show that the color development of InGaN-based Sr3SiO5：Eu^2＋ is better than that of InGaN-based YAG：Ce^3＋, and the CIE chromaticity of InGaN-based Sr3SiO5：Eu^2＋ is （x=0.348, y=0.326）.     

Pu(H2O)53+和Pu(H2O)54+ 团簇的相对论密度泛函研究

用TPSSTPSS密度泛函方法, Pu离子和H₂O分子分别采用相对论有效原子实势(RECP)和6-31g基组, 研究了Pu(H₂O)₅³⁺和Pu(H₂O)₅⁴⁺ 团簇溶剂化和非溶剂化效应中的几何结构及紫外可见吸收光谱. 计算结果表明: 水溶剂环境对Pu(H₂O)₅³⁺及Pu(H₂O)₅⁴⁺ 团簇的几何结构影响都比较明显. NBO电荷分析表明水分子与钚离子之间没有直接的电荷转移. 所研究团簇的未配对电子都占据5f轨道. 在气相及水溶剂环境下, 所研究团簇的紫外可见吸收光谱存在较大差距. 主要的吸收峰大都源于f电子之间的跃迁.